WO2011027992A3 - 사파이어 단결정 성장방법과 그 장치 - Google Patents

사파이어 단결정 성장방법과 그 장치 Download PDF

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WO2011027992A3
WO2011027992A3 PCT/KR2010/005731 KR2010005731W WO2011027992A3 WO 2011027992 A3 WO2011027992 A3 WO 2011027992A3 KR 2010005731 W KR2010005731 W KR 2010005731W WO 2011027992 A3 WO2011027992 A3 WO 2011027992A3
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Prior art keywords
single crystal
growing
sapphire single
crucible
quality
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PCT/KR2010/005731
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English (en)
French (fr)
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WO2011027992A2 (ko
Inventor
안준태
Original Assignee
주식회사 크리스텍
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Application filed by 주식회사 크리스텍 filed Critical 주식회사 크리스텍
Priority to US13/394,031 priority Critical patent/US9790618B2/en
Priority to JP2012527816A priority patent/JP5596788B2/ja
Priority to EP10813901.5A priority patent/EP2474651A4/en
Priority to CN2010800499683A priority patent/CN102597334A/zh
Priority to RU2012113230/05A priority patent/RU2520472C2/ru
Publication of WO2011027992A2 publication Critical patent/WO2011027992A2/ko
Publication of WO2011027992A3 publication Critical patent/WO2011027992A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Abstract

본 발명은 사파이어 단결정 성장방법과 그 장치에 관한 것으로, 더욱 상세하게는 직사각형의 긴 도가니를 사용하고, c-축 방향으로 긴 종자결정을 사용함에 있어, 짧은 시간 내에 고품질의 긴 단결정을 획득할 수 있는 사파이어 단결정 성장방법과 그 장치에 관한 것이다. 본 발명에 따른 사파이어 단결정 성장방법과 그 장치를 이용하면, 직사각형의 도가니를 이용하여도 도가니 내부의 수평방향의 온도를 균일하게 유지할 수 있어, 고품질의 단결정을 획득할 수 있을 뿐만 아니라, 단결정성장에 있어서 실패 확률을 낮추는 효과가 있다.
PCT/KR2010/005731 2009-09-05 2010-08-26 사파이어 단결정 성장방법과 그 장치 WO2011027992A2 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US13/394,031 US9790618B2 (en) 2009-09-05 2010-08-26 Method and apparatus for growing sapphire single crystals
JP2012527816A JP5596788B2 (ja) 2009-09-05 2010-08-26 サファイア単結晶成長方法とその装置
EP10813901.5A EP2474651A4 (en) 2009-09-05 2010-08-26 METHOD AND APPARATUS FOR GROWING A MONOCRYSTAL OF SAPHIR
CN2010800499683A CN102597334A (zh) 2009-09-05 2010-08-26 生长蓝宝石单晶的方法和设备
RU2012113230/05A RU2520472C2 (ru) 2009-09-05 2010-08-26 Способ и устройство для выращивания монокристаллов сапфира

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0083722 2009-09-05
KR1020090083722A KR101136143B1 (ko) 2009-09-05 2009-09-05 사파이어 단결정 성장방법과 그 장치

Publications (2)

Publication Number Publication Date
WO2011027992A2 WO2011027992A2 (ko) 2011-03-10
WO2011027992A3 true WO2011027992A3 (ko) 2011-07-21

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PCT/KR2010/005731 WO2011027992A2 (ko) 2009-09-05 2010-08-26 사파이어 단결정 성장방법과 그 장치

Country Status (8)

Country Link
US (1) US9790618B2 (ko)
EP (1) EP2474651A4 (ko)
JP (1) JP5596788B2 (ko)
KR (1) KR101136143B1 (ko)
CN (2) CN102597334A (ko)
RU (1) RU2520472C2 (ko)
TW (1) TWI404843B (ko)
WO (1) WO2011027992A2 (ko)

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CN102330144A (zh) * 2011-10-08 2012-01-25 陕西合木实业有限公司 一种成品大面积籽晶和矩形大面积籽晶的制备方法及设备
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KR101196445B1 (ko) 2012-05-03 2012-11-01 주식회사 크리스텍 사파이어 단결정 성장장치 및 이를 이용한 사파이어 단결정 성장방법
CN102828232A (zh) * 2012-09-25 2012-12-19 倪屹 三维蓝宝石晶体生长装置
KR101439380B1 (ko) * 2012-10-31 2014-09-11 주식회사 사파이어테크놀로지 사파이어 단결정 열처리 방법 및 장치
KR101420841B1 (ko) 2012-10-31 2014-07-17 주식회사 사파이어테크놀로지 사파이어 단결정 성장방법
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CN105386125A (zh) * 2015-12-03 2016-03-09 河南西格马晶体科技有限公司 一种制备蓝宝石单晶体的控制方法
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CN109725178A (zh) * 2017-10-27 2019-05-07 江苏维福特科技发展股份有限公司 晶体夹头
CN107881550B (zh) * 2017-11-08 2020-11-06 中国科学院合肥物质科学研究院 一种大尺寸晶体的熔体法晶体生长方法
KR20200046468A (ko) 2018-10-24 2020-05-07 주식회사 에스티씨 사파이어 단결정 성장장치용 도가니
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CN109898136A (zh) * 2019-04-03 2019-06-18 贝民贤 多重蓝宝石单晶生长装置及生长方法
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CN114318494B (zh) * 2021-11-30 2023-09-19 江苏吉星新材料有限公司 减少蓝宝石晶体长晶缺陷的方法及蓝宝石长晶炉
CN115044962A (zh) * 2022-07-13 2022-09-13 北京铭镓半导体有限公司 一种vgf法彩色宝石晶体生长坩埚盖

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WO2011027992A2 (ko) 2011-03-10
RU2520472C2 (ru) 2014-06-27
JP5596788B2 (ja) 2014-09-24
EP2474651A2 (en) 2012-07-11
TWI404843B (zh) 2013-08-11
TW201109487A (en) 2011-03-16
JP2013503810A (ja) 2013-02-04
US9790618B2 (en) 2017-10-17
RU2012113230A (ru) 2013-10-20
CN102597334A (zh) 2012-07-18
EP2474651A4 (en) 2013-07-31
US20120174857A1 (en) 2012-07-12
KR20110025716A (ko) 2011-03-11
CN106978628A (zh) 2017-07-25

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