TW200624998A - Photomask-blank, photomask and fabrication method thereof - Google Patents
Photomask-blank, photomask and fabrication method thereofInfo
- Publication number
- TW200624998A TW200624998A TW094131545A TW94131545A TW200624998A TW 200624998 A TW200624998 A TW 200624998A TW 094131545 A TW094131545 A TW 094131545A TW 94131545 A TW94131545 A TW 94131545A TW 200624998 A TW200624998 A TW 200624998A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- silicon
- film
- photomask
- shieldable
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 238000001312 dry etching Methods 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910052723 transition metal Inorganic materials 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910000423 chromium oxide Inorganic materials 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910000314 transition metal oxide Inorganic materials 0.000 abstract 1
- 150000003624 transition metals Chemical class 0.000 abstract 1
- -1 transition-metal nitride Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B44—DECORATIVE ARTS
- B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
- B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
- B44C1/22—Removing surface-material, e.g. by engraving, by etching
- B44C1/222—Removing surface-material, e.g. by engraving, by etching using machine-driven mechanical means
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
- C03C25/66—Chemical treatment, e.g. leaching, acid or alkali treatment
- C03C25/68—Chemical treatment, e.g. leaching, acid or alkali treatment by etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
- Y10T428/31616—Next to polyester [e.g., alkyd]
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004308445 | 2004-10-22 | ||
JP2004308430 | 2004-10-22 | ||
JP2005220587A JP4413828B2 (ja) | 2004-10-22 | 2005-07-29 | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
JP2005220562A JP4405443B2 (ja) | 2004-10-22 | 2005-07-29 | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200624998A true TW200624998A (en) | 2006-07-16 |
TWI375114B TWI375114B (en) | 2012-10-21 |
Family
ID=35276606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94131545A TWI375114B (en) | 2004-10-22 | 2005-09-13 | Photomask-blank, photomask and fabrication method thereof |
Country Status (7)
Country | Link |
---|---|
US (1) | US7625676B2 (zh) |
EP (2) | EP1936437B1 (zh) |
KR (2) | KR101204632B1 (zh) |
CN (1) | CN1763632B (zh) |
DE (1) | DE602005017861D1 (zh) |
SG (1) | SG130985A1 (zh) |
TW (1) | TWI375114B (zh) |
Cited By (4)
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---|---|---|---|---|
TWI406085B (zh) * | 2008-02-27 | 2013-08-21 | Hoya Corp | 光罩基板、光罩及該等之製造方法 |
US8992788B2 (en) | 2011-11-18 | 2015-03-31 | Shin-Etsu Chemical Co., Ltd. | Evaluation of etching conditions for pattern-forming film |
TWI485507B (zh) * | 2009-09-29 | 2015-05-21 | Ulvac Inc | 光罩製造方法 |
TWI551940B (zh) * | 2010-06-29 | 2016-10-01 | Hoya股份有限公司 | 遮罩基板與多階調遮罩及該等製造方法 |
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US7771913B2 (en) * | 2006-04-04 | 2010-08-10 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process using the same |
JP5294227B2 (ja) * | 2006-09-15 | 2013-09-18 | Hoya株式会社 | マスクブランク及び転写マスクの製造方法 |
JP4466881B2 (ja) * | 2007-06-06 | 2010-05-26 | 信越化学工業株式会社 | フォトマスクブランク、レジストパターンの形成方法、及びフォトマスクの製造方法 |
JP2009063638A (ja) * | 2007-09-04 | 2009-03-26 | Fujitsu Microelectronics Ltd | フォトマスクの製造方法及び半導体装置の製造方法 |
JP5348866B2 (ja) * | 2007-09-14 | 2013-11-20 | Hoya株式会社 | マスクの製造方法 |
US8216745B2 (en) * | 2007-11-01 | 2012-07-10 | Ulvac Coating Corporation | Half-tone mask, half-tone mask blank and method for manufacturing half-tone mask |
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WO2010050447A1 (ja) | 2008-10-29 | 2010-05-06 | Hoya株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
TWI457697B (zh) * | 2009-01-15 | 2014-10-21 | Shinetsu Chemical Co | 光罩製造方法,空白光罩與乾式蝕刻法 |
CN102365584B (zh) | 2009-01-29 | 2014-07-30 | 迪吉福来克斯有限公司 | 用于在光聚合物表面上产生光掩模的工艺 |
JP4941684B2 (ja) * | 2009-03-27 | 2012-05-30 | 信越化学工業株式会社 | フォトマスクブランク及びその加工方法 |
JP5658435B2 (ja) * | 2009-03-31 | 2015-01-28 | リンテック株式会社 | マスクフィルム用部材、それを用いたマスクフィルムの製造方法及び感光性樹脂印刷版の製造方法 |
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JP2002131883A (ja) * | 2000-10-27 | 2002-05-09 | Hitachi Ltd | フォトマスクの製造方法およびフォトマスク |
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JP4212025B2 (ja) * | 2002-07-04 | 2009-01-21 | Hoya株式会社 | 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法 |
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-
2005
- 2005-09-13 TW TW94131545A patent/TWI375114B/zh active
- 2005-10-11 CN CN2005101126192A patent/CN1763632B/zh active Active
- 2005-10-18 EP EP20080004173 patent/EP1936437B1/en active Active
- 2005-10-18 DE DE200560017861 patent/DE602005017861D1/de active Active
- 2005-10-18 EP EP20050022691 patent/EP1650600B1/en active Active
- 2005-10-20 KR KR1020050099108A patent/KR101204632B1/ko active IP Right Grant
- 2005-10-21 US US11/255,135 patent/US7625676B2/en active Active
- 2005-12-15 SG SG200506807-7A patent/SG130985A1/en unknown
-
2012
- 2012-07-20 KR KR1020120079395A patent/KR101374498B1/ko active IP Right Grant
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI406085B (zh) * | 2008-02-27 | 2013-08-21 | Hoya Corp | 光罩基板、光罩及該等之製造方法 |
TWI485507B (zh) * | 2009-09-29 | 2015-05-21 | Ulvac Inc | 光罩製造方法 |
TWI551940B (zh) * | 2010-06-29 | 2016-10-01 | Hoya股份有限公司 | 遮罩基板與多階調遮罩及該等製造方法 |
US8992788B2 (en) | 2011-11-18 | 2015-03-31 | Shin-Etsu Chemical Co., Ltd. | Evaluation of etching conditions for pattern-forming film |
TWI488001B (zh) * | 2011-11-18 | 2015-06-11 | Shinetsu Chemical Co | 圖型形成膜之蝕刻條件的評估方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20120089227A (ko) | 2012-08-09 |
EP1936437A2 (en) | 2008-06-25 |
KR101374498B1 (ko) | 2014-03-13 |
EP1936437A3 (en) | 2008-07-16 |
EP1650600B1 (en) | 2009-11-25 |
EP1936437B1 (en) | 2014-06-25 |
CN1763632B (zh) | 2011-02-16 |
CN1763632A (zh) | 2006-04-26 |
TWI375114B (en) | 2012-10-21 |
US7625676B2 (en) | 2009-12-01 |
SG130985A1 (en) | 2007-04-26 |
US20060088774A1 (en) | 2006-04-27 |
KR20060049091A (ko) | 2006-05-18 |
DE602005017861D1 (de) | 2010-01-07 |
EP1650600A3 (en) | 2006-05-31 |
KR101204632B1 (ko) | 2012-11-23 |
EP1650600A2 (en) | 2006-04-26 |
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