SG63578A1 - Thin film semiconductor device process for fabricating the same and silicon film - Google Patents
Thin film semiconductor device process for fabricating the same and silicon filmInfo
- Publication number
- SG63578A1 SG63578A1 SG1996003651A SG1996003651A SG63578A1 SG 63578 A1 SG63578 A1 SG 63578A1 SG 1996003651 A SG1996003651 A SG 1996003651A SG 1996003651 A SG1996003651 A SG 1996003651A SG 63578 A1 SG63578 A1 SG 63578A1
- Authority
- SG
- Singapore
- Prior art keywords
- fabricating
- semiconductor device
- same
- device process
- thin film
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000010408 film Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31047790 | 1990-11-16 | ||
JP7640691 | 1991-04-09 | ||
JP23509891 | 1991-09-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG63578A1 true SG63578A1 (en) | 1999-03-30 |
Family
ID=27302149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996003651A SG63578A1 (en) | 1990-11-16 | 1991-11-15 | Thin film semiconductor device process for fabricating the same and silicon film |
Country Status (5)
Country | Link |
---|---|
US (5) | US5372958A (de) |
EP (1) | EP0486047B1 (de) |
KR (1) | KR100283350B1 (de) |
DE (1) | DE69131570T2 (de) |
SG (1) | SG63578A1 (de) |
Families Citing this family (125)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5372958A (en) * | 1990-11-16 | 1994-12-13 | Seiko Epson Corporation | Process for fabricating a thin film semiconductor device |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
EP0499979A3 (en) * | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
JP2794678B2 (ja) | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
JP2717237B2 (ja) | 1991-05-16 | 1998-02-18 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
JPH05249478A (ja) * | 1991-12-25 | 1993-09-28 | Toshiba Corp | 液晶表示装置 |
US5576222A (en) * | 1992-01-27 | 1996-11-19 | Tdk Corp. | Method of making a semiconductor image sensor device |
KR950005484B1 (ko) * | 1992-09-29 | 1995-05-24 | 현대전자산업주식회사 | 플라즈마 산화 처리를 이용한 폴리실리콘 박막트랜지스터 제조방법 |
KR100250020B1 (ko) * | 1993-03-02 | 2000-03-15 | 가네꼬 히사시 | 반도체 소자용 다결정 실리콘 박막 형성 방법(method of forming polycrystalline silicon thin films for semiconductor devices) |
FR2702882B1 (fr) * | 1993-03-16 | 1995-07-28 | Thomson Lcd | Procédé de fabrication de transistors à couches minces étagés directs. |
US6730549B1 (en) | 1993-06-25 | 2004-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for its preparation |
JP2677167B2 (ja) * | 1993-07-08 | 1997-11-17 | 日本電気株式会社 | 駆動回路内蔵型液晶表示装置の製造方法 |
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TW297142B (de) | 1993-09-20 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
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JP2646977B2 (ja) * | 1993-11-29 | 1997-08-27 | 日本電気株式会社 | 順スタガ型薄膜トランジスタの製造方法 |
US7081938B1 (en) | 1993-12-03 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JP3254072B2 (ja) * | 1994-02-15 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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FR2719416B1 (fr) * | 1994-04-29 | 1996-07-05 | Thomson Lcd | Procédé de passivation des flancs d'un composant semiconducteur à couches minces. |
KR100327086B1 (ko) | 1994-06-15 | 2002-03-06 | 구사마 사부로 | 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기 |
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KR0147019B1 (ko) * | 1994-12-21 | 1998-09-15 | 김광호 | 박막트랜지스터 액정 디스플레이 소자의 패드부 및 박막트랜지스터 액정디스플레이 소자의 제조방법 |
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JP3645380B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
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-
1991
- 1991-11-15 US US07/792,436 patent/US5372958A/en not_active Expired - Lifetime
- 1991-11-15 EP EP91119529A patent/EP0486047B1/de not_active Expired - Lifetime
- 1991-11-15 DE DE69131570T patent/DE69131570T2/de not_active Expired - Lifetime
- 1991-11-15 SG SG1996003651A patent/SG63578A1/en unknown
-
1994
- 1994-07-07 US US08/271,861 patent/US5504019A/en not_active Expired - Lifetime
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1995
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2000
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Also Published As
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---|---|
EP0486047B1 (de) | 1999-09-01 |
EP0486047A3 (en) | 1996-04-10 |
KR100283350B1 (ko) | 2001-02-15 |
US5504019A (en) | 1996-04-02 |
EP0486047A2 (de) | 1992-05-20 |
US5372958A (en) | 1994-12-13 |
US5637512A (en) | 1997-06-10 |
DE69131570T2 (de) | 2000-02-17 |
DE69131570D1 (de) | 1999-10-07 |
US5811323A (en) | 1998-09-22 |
US5591989A (en) | 1997-01-07 |
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