SG48688A1 - Method of manufacturing semiconductor chips for display - Google Patents
Method of manufacturing semiconductor chips for displayInfo
- Publication number
- SG48688A1 SG48688A1 SG1995000351A SG1995000351A SG48688A1 SG 48688 A1 SG48688 A1 SG 48688A1 SG 1995000351 A SG1995000351 A SG 1995000351A SG 1995000351 A SG1995000351 A SG 1995000351A SG 48688 A1 SG48688 A1 SG 48688A1
- Authority
- SG
- Singapore
- Prior art keywords
- display
- semiconductor chips
- manufacturing semiconductor
- manufacturing
- chips
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11600794 | 1994-05-02 | ||
JP25761694A JP3326654B2 (ja) | 1994-05-02 | 1994-09-27 | 表示用半導体チップの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG48688A1 true SG48688A1 (en) | 1998-05-18 |
Family
ID=26454407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1995000351A SG48688A1 (en) | 1994-05-02 | 1995-04-28 | Method of manufacturing semiconductor chips for display |
Country Status (6)
Country | Link |
---|---|
US (2) | US5888839A (de) |
EP (1) | EP0681316A3 (de) |
JP (1) | JP3326654B2 (de) |
KR (1) | KR100379859B1 (de) |
MY (1) | MY114876A (de) |
SG (1) | SG48688A1 (de) |
Families Citing this family (82)
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CN1088002A (zh) * | 1992-11-16 | 1994-06-15 | 东京电子株式会社 | 制造液晶显示器基板及评价半导体晶体的方法与装置 |
TW425637B (en) * | 1993-01-18 | 2001-03-11 | Semiconductor Energy Lab | Method of fabricating mis semiconductor device |
JP3267375B2 (ja) * | 1993-03-23 | 2002-03-18 | ティーディーケイ株式会社 | 固体撮像装置 |
US5471330A (en) * | 1993-07-29 | 1995-11-28 | Honeywell Inc. | Polysilicon pixel electrode |
KR100299292B1 (ko) * | 1993-11-02 | 2001-12-01 | 이데이 노부유끼 | 다결정실리콘박막형성방법및그표면처리장치 |
JP3326654B2 (ja) * | 1994-05-02 | 2002-09-24 | ソニー株式会社 | 表示用半導体チップの製造方法 |
-
1994
- 1994-09-27 JP JP25761694A patent/JP3326654B2/ja not_active Expired - Lifetime
-
1995
- 1995-04-27 US US08/429,613 patent/US5888839A/en not_active Expired - Lifetime
- 1995-04-28 SG SG1995000351A patent/SG48688A1/en unknown
- 1995-04-28 EP EP95106505A patent/EP0681316A3/de not_active Withdrawn
- 1995-04-28 MY MYPI95001121A patent/MY114876A/en unknown
- 1995-05-01 KR KR1019950010644A patent/KR100379859B1/ko not_active IP Right Cessation
-
1998
- 1998-12-22 US US09/219,137 patent/US6248606B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100379859B1 (ko) | 2003-07-18 |
EP0681316A2 (de) | 1995-11-08 |
KR950034850A (ko) | 1995-12-28 |
JP3326654B2 (ja) | 2002-09-24 |
JPH0823105A (ja) | 1996-01-23 |
EP0681316A3 (de) | 1998-01-07 |
US6248606B1 (en) | 2001-06-19 |
US5888839A (en) | 1999-03-30 |
MY114876A (en) | 2003-02-28 |
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