SG138446A1 - Thin film transistor and method for manufacturing same - Google Patents
Thin film transistor and method for manufacturing sameInfo
- Publication number
- SG138446A1 SG138446A1 SG200401067-4A SG2004010674A SG138446A1 SG 138446 A1 SG138446 A1 SG 138446A1 SG 2004010674 A SG2004010674 A SG 2004010674A SG 138446 A1 SG138446 A1 SG 138446A1
- Authority
- SG
- Singapore
- Prior art keywords
- hydrogen
- thin film
- film transistor
- manufacturing same
- tft
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract 5
- 239000001257 hydrogen Substances 0.000 abstract 5
- 239000010408 film Substances 0.000 abstract 2
- 238000005984 hydrogenation reaction Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003067858A JP4382375B2 (ja) | 2003-03-13 | 2003-03-13 | 薄膜トランジスタの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG138446A1 true SG138446A1 (en) | 2008-01-28 |
Family
ID=32959309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200401067-4A SG138446A1 (en) | 2003-03-13 | 2004-03-04 | Thin film transistor and method for manufacturing same |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20040178429A1 (zh) |
| JP (1) | JP4382375B2 (zh) |
| KR (1) | KR100607768B1 (zh) |
| CN (1) | CN1310339C (zh) |
| SG (1) | SG138446A1 (zh) |
| TW (1) | TWI285763B (zh) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005072264A (ja) * | 2003-08-25 | 2005-03-17 | Seiko Epson Corp | トランジスタの製造方法、トランジスタ、回路基板、電気光学装置及び電子機器 |
| CN100350629C (zh) * | 2004-07-14 | 2007-11-21 | 友达光电股份有限公司 | 半导体元件与其中的多晶硅薄膜晶体管及其制造方法 |
| US7786552B2 (en) * | 2005-06-10 | 2010-08-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having hydrogen-containing layer |
| CN101346810B (zh) | 2006-01-25 | 2012-04-18 | 夏普株式会社 | 半导体装置的制造方法和半导体装置 |
| JP5344205B2 (ja) | 2006-03-22 | 2013-11-20 | Ｎｌｔテクノロジー株式会社 | 積層配線、該積層配線を用いた半導体装置及びその製造方法 |
| JP4960330B2 (ja) * | 2008-10-21 | 2012-06-27 | 株式会社Ａｄｅｋａ | ポジ型感光性組成物及び永久レジスト |
| US8669644B2 (en) * | 2009-10-07 | 2014-03-11 | Texas Instruments Incorporated | Hydrogen passivation of integrated circuits |
| CN101958250B (zh) * | 2010-06-28 | 2013-07-17 | 四川虹视显示技术有限公司 | 低温多晶硅tft的制作工艺 |
| US8530273B2 (en) * | 2010-09-29 | 2013-09-10 | Guardian Industries Corp. | Method of making oxide thin film transistor array |
| JP6053490B2 (ja) | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2013070100A (ja) * | 2013-01-09 | 2013-04-18 | Nlt Technologies Ltd | 積層配線、該積層配線を用いた半導体装置及びその製造方法 |
| CN104091783A (zh) * | 2014-06-26 | 2014-10-08 | 京东方科技集团股份有限公司 | Tft阵列基板的制作方法、tft阵列基板和显示面板 |
| KR20180072901A (ko) | 2016-12-21 | 2018-07-02 | 에스케이하이닉스 주식회사 | 반도체장치 및 그 제조 방법 |
| US10340387B2 (en) | 2017-09-20 | 2019-07-02 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Low temperature poly-silicon thin film transistor, manufacturing method thereof, and array substrate |
| CN107507869A (zh) * | 2017-09-20 | 2017-12-22 | 武汉华星光电半导体显示技术有限公司 | 低温多晶硅薄膜晶体管及其制备方法和阵列基板 |
| CN108987265A (zh) * | 2018-06-26 | 2018-12-11 | 武汉华星光电半导体显示技术有限公司 | 显示器件制造方法及装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06209012A (ja) * | 1993-01-11 | 1994-07-26 | Sharp Corp | 半導体装置の製造方法 |
| JPH09252135A (ja) * | 1996-03-15 | 1997-09-22 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法と薄膜トランジスタアレイの製造方法 |
| JPH11307777A (ja) * | 1998-04-21 | 1999-11-05 | Nec Corp | トップゲート型薄膜トランジスタ及びその製造方法 |
| JP2000286426A (ja) * | 1999-01-26 | 2000-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US20010013607A1 (en) * | 1994-06-15 | 2001-08-16 | Mitsutoshi Miyasaka | Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device |
| US20010055830A1 (en) * | 2000-06-19 | 2001-12-27 | Satoshi Yoshimoto | Semiconductor device and method of manufacturing the same |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0197531B1 (en) * | 1985-04-08 | 1993-07-28 | Hitachi, Ltd. | Thin film transistor formed on insulating substrate |
| JPS62204575A (ja) | 1986-03-05 | 1987-09-09 | Matsushita Electric Ind Co Ltd | 薄膜半導体装置およびその製造方法 |
| JPS6354773A (ja) | 1986-08-25 | 1988-03-09 | Hitachi Ltd | 薄膜トランジスタの製造方法 |
| JPH0458564A (ja) | 1990-06-28 | 1992-02-25 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
| US5576222A (en) * | 1992-01-27 | 1996-11-19 | Tdk Corp. | Method of making a semiconductor image sensor device |
| JPH05235353A (ja) | 1992-02-21 | 1993-09-10 | Seiko Epson Corp | アクティブマトリックス基板とその製造方法 |
| JP3171673B2 (ja) | 1992-07-16 | 2001-05-28 | シャープ株式会社 | 薄膜トランジスタ及びその製造方法 |
| JPH0677484A (ja) | 1992-08-27 | 1994-03-18 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
| JP2898167B2 (ja) * | 1993-04-28 | 1999-05-31 | シャープ株式会社 | 薄膜トランジスタの製造方法 |
| US5663077A (en) * | 1993-07-27 | 1997-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films |
| JPH07106582A (ja) | 1993-09-29 | 1995-04-21 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法 |
| JP3086579B2 (ja) | 1993-12-28 | 2000-09-11 | シャープ株式会社 | 薄膜トランジスタの製造方法 |
| US5620906A (en) * | 1994-02-28 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device by introducing hydrogen ions |
| JPH07249772A (ja) | 1994-03-14 | 1995-09-26 | Sanyo Electric Co Ltd | 多結晶シリコン薄膜トランジスタ及びその製造方法 |
| JP3330255B2 (ja) | 1995-04-26 | 2002-09-30 | シャープ株式会社 | 半導体装置の製造方法 |
| JPH098313A (ja) * | 1995-06-23 | 1997-01-10 | Sharp Corp | 半導体装置の製造方法および液晶表示装置の製造方法 |
| US5771110A (en) * | 1995-07-03 | 1998-06-23 | Sanyo Electric Co., Ltd. | Thin film transistor device, display device and method of fabricating the same |
| US6399988B1 (en) * | 1999-03-26 | 2002-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having lightly doped regions |
| US20020020840A1 (en) * | 2000-03-10 | 2002-02-21 | Setsuo Nakajima | Semiconductor device and manufacturing method thereof |
| JP2001326357A (ja) | 2000-05-16 | 2001-11-22 | Toshiba Corp | 薄膜トランジスタの製造方法 |
| JP3357038B2 (ja) * | 2001-05-16 | 2002-12-16 | 松下電器産業株式会社 | 薄膜トランジスタの製造方法と液晶表示装置の製造方法 |
-
2003
- 2003-03-13 JP JP2003067858A patent/JP4382375B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-01 TW TW093105265A patent/TWI285763B/zh not_active IP Right Cessation
- 2004-03-04 SG SG200401067-4A patent/SG138446A1/en unknown
- 2004-03-08 US US10/793,845 patent/US20040178429A1/en not_active Abandoned
- 2004-03-11 KR KR1020040016407A patent/KR100607768B1/ko active IP Right Grant
- 2004-03-15 CN CNB2004100287474A patent/CN1310339C/zh not_active Expired - Lifetime
-
2009
- 2009-03-05 US US12/379,991 patent/US8183135B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06209012A (ja) * | 1993-01-11 | 1994-07-26 | Sharp Corp | 半導体装置の製造方法 |
| US20010013607A1 (en) * | 1994-06-15 | 2001-08-16 | Mitsutoshi Miyasaka | Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device |
| JPH09252135A (ja) * | 1996-03-15 | 1997-09-22 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法と薄膜トランジスタアレイの製造方法 |
| JPH11307777A (ja) * | 1998-04-21 | 1999-11-05 | Nec Corp | トップゲート型薄膜トランジスタ及びその製造方法 |
| JP2000286426A (ja) * | 1999-01-26 | 2000-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US20010055830A1 (en) * | 2000-06-19 | 2001-12-27 | Satoshi Yoshimoto | Semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040178429A1 (en) | 2004-09-16 |
| KR100607768B1 (ko) | 2006-08-01 |
| CN1531112A (zh) | 2004-09-22 |
| TWI285763B (en) | 2007-08-21 |
| KR20040081344A (ko) | 2004-09-21 |
| TW200424650A (en) | 2004-11-16 |
| JP2004281506A (ja) | 2004-10-07 |
| US8183135B2 (en) | 2012-05-22 |
| US20090209070A1 (en) | 2009-08-20 |
| JP4382375B2 (ja) | 2009-12-09 |
| CN1310339C (zh) | 2007-04-11 |
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