CN108987265A - 显示器件制造方法及装置 - Google Patents

显示器件制造方法及装置 Download PDF

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CN108987265A
CN108987265A CN201810670832.2A CN201810670832A CN108987265A CN 108987265 A CN108987265 A CN 108987265A CN 201810670832 A CN201810670832 A CN 201810670832A CN 108987265 A CN108987265 A CN 108987265A
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display device
hydrogen
degrees celsius
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吕明仁
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2018/100732 priority patent/WO2020000597A1/zh
Priority to US16/095,377 priority patent/US10886131B2/en
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Abstract

本发明公开了一种显示器件制造方法及装置。所述方法包括以下步骤：步骤A、形成显示器件，其中，所述显示器件设置有半导体构件和绝缘层，所述绝缘层包覆所述半导体构件的至少一部分；步骤B、将所述显示器件放置于密封腔室内；步骤C、向所述密封腔室输入氢气，以使所述氢气中的氢原子扩散至所述绝缘层中；步骤D、将所述密封腔室内的所述氢气和/或所述显示器件加热至预定温度，以使所述绝缘层中的所述氢原子扩散至所述半导体构件中。本发明能提高其中的半导体构件的电性表现。

Description

显示器件制造方法及装置
【技术领域】
本发明涉及显示技术领域，特别涉及一种显示器件制造方法及装置。
【背景技术】
传统的显示器件一般包括栅极、绝缘层、半导体构件等部件，该半导体构件的电性表现是显示器件的显示质量的重要决定因素。
影响半导体构件的电性表现的因素有多种，氢含量是其中的一种。在实践中，发明人发现：传统的显示器件中的半导体构件中的氢含量较少，因此，传统的显示器件中的半导体构件的电性表现较低。
故，有必要提出一种新的技术方案，以解决上述技术问题。
【发明内容】
本发明的目的在于提供一种显示器件制造方法及装置，其能提高其中的半导体构件的电性表现。
为解决上述问题，本发明的技术方案如下：
一种显示器件制造方法，所述方法包括以下步骤：步骤A、形成显示器件，其中，所述显示器件设置有半导体构件和绝缘层，所述绝缘层包覆所述半导体构件的至少一部分；步骤B、将所述显示器件放置于密封腔室内；步骤C、向所述密封腔室输入氢气，以使所述氢气中的氢原子扩散至所述绝缘层中；步骤D、将所述密封腔室内的所述氢气和/或所述显示器件加热至预定温度，以使所述绝缘层中的所述氢原子扩散至所述半导体构件中。
在上述显示器件制造方法中，所述预定温度处于300摄氏度至450摄氏度的范围内。
在上述显示器件制造方法中，所述预定温度处于330摄氏度至400摄氏度的范围内。
在上述显示器件制造方法中，在所述步骤C之前，所述方法还包括以下步骤：步骤E、对所述密封腔室进行抽真空处理。
在上述显示器件制造方法中，所述半导体构件所对应的半导体材料为多晶硅或非晶硅。
一种显示器件制造装置，所述显示器件制造装置包括：密封腔室，所述密封腔室用于容置显示器件；氢气输入器，所述氢气输入器用于向所述密封腔室内输入氢气，以使所述氢气中的氢原子扩散至所述显示器件的绝缘层中；加热器，所述加热器设置于所述密封腔室内，所述加热器用于将所述密封腔室内的所述氢气和/或所述显示器件加热至预定温度，以使所述绝缘层中的所述氢原子扩散至所述显示器件的半导体构件中。
在上述显示器件制造装置中，所述预定温度处于300摄氏度至450摄氏度的范围内。
在上述显示器件制造装置中，所述预定温度处于330摄氏度至400摄氏度的范围内。
在上述显示器件制造装置中，所述显示器件制造装置还包括：抽真空器，所述抽真空器用于对所述密封腔室进行抽真空处理。
在上述显示器件制造装置中，所述半导体构件所对应的半导体材料为多晶硅或非晶硅。
相对现有技术，在本发明中，由于在制造显示器件的过程中往半导体构件中注入较多的氢原子，因此提高了半导体构件中的氢原子的含量，进而提高了半导体构件的电性表现，有利于使得显示器件具有较高的显示质量。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下。
【附图说明】
图1为本发明放置有显示器件的显示器件制造装置的示意图；
图2为本发明的显示器件制造方法的流程图；
图3为图2中形成显示器件的步骤的流程图。
【具体实施方式】
本说明书所使用的词语“实施例”意指实例、示例或例证。此外，本说明书和所附权利要求中所使用的冠词“一”一般地可以被解释为“一个或多个”，除非另外指定或从上下文可以清楚确定单数形式。
本发明的显示器件106适用于TFT-LCD(Thin Film Transistor Liquid CrystalDisplay，薄膜晶体管液晶显示面板)、OLED(Organic Light Emitting Diode，有机发光二极管显示面板)等。
参考图1，图1为本发明放置有显示器件106的显示器件制造装置的示意图。
本发明的显示器件制造装置包括密封腔室101、氢气输入器105、加热器103。
所述密封腔室101用于容置显示器件106，所述密封腔室101设置有密封口104。
所述氢气输入器105用于向所述密封腔室101内输入氢气，以使所述氢气中的氢原子扩散至所述显示器件106的绝缘层中；具体地，所述氢气输入器105用于通过所述密封口104向所述密封腔室101内输入氢气。
所述加热器103设置于所述密封腔室101内，所述加热器103用于将所述密封腔室101内的所述氢气和/或所述显示器件106加热至预定温度，以使所述绝缘层中的所述氢原子扩散至所述显示器件106的半导体构件中。
所述预定温度处于300摄氏度至450摄氏度的范围内。例如，所述预定温度为300摄氏度、305摄氏度、310摄氏度、315摄氏度、320摄氏度、325摄氏度、330摄氏度、335摄氏度、340摄氏度、345摄氏度、350摄氏度、355摄氏度、360摄氏度、365摄氏度、370摄氏度、375摄氏度、380摄氏度、385摄氏度、390摄氏度、400摄氏度、405摄氏度、410摄氏度、415摄氏度、420摄氏度、425摄氏度、430摄氏度、435摄氏度、440摄氏度、445摄氏度、450摄氏度。优选地，所述预定温度处于330摄氏度至400摄氏度的范围内。
所述显示器件制造装置还包括抽真空器，所述抽真空器用于对所述密封腔室101进行抽真空处理。具体地，所述抽真空器用于在所述氢气输入器105向所述密封腔室101内输入氢气前对所述密封腔室101进行抽真空处理。
在保持所述密封腔室101内的容纳空间102的体积不变的情况下，所述氢气输入器105用于继续往所述密封腔室101内输入氢气，以使所述密封腔室101内的气压升高，从而促进更多的氢原子从所述氢气中扩散至所述绝缘层中，以及促进更多的氢原子从所述绝缘层中扩散至所述半导体构件中。或者，所述密封腔室101用于压缩其容纳空间102的体积，以使所述密封腔室101内的气压升高，从而促进更多的氢原子从所述氢气中扩散至所述绝缘层中，以及促进更多的氢原子从所述绝缘层中扩散至所述半导体构件中。具体地，所述密封腔室101内还设置有活塞，所述活塞用于沿预定方向移动，以压缩所述密封腔室101的容纳空间102。
所述半导体构件所对应的半导体材料为多晶硅或非晶硅。
参考图2和图3，图2为本发明的显示器件制造方法的流程图，图3为图2中形成显示器件106的步骤的流程图。
本发明的显示器件制造方法包括以下步骤：
步骤A(201)、形成显示器件106，其中，所述显示器件106设置有半导体构件和绝缘层，所述绝缘层包覆所述半导体构件的至少一部分。
步骤B(202)、将所述显示器件106放置于密封腔室101内。
步骤C(204)、向所述密封腔室101输入氢气，以使所述氢气中的氢原子扩散至所述绝缘层中。具体地，所述氢气输入器105通过所述密封腔室101的密封口104向所述密封腔室101输入氢气。
步骤D(205)、将所述密封腔室101内的所述氢气和/或所述显示器件106加热至预定温度，以使所述绝缘层中的所述氢原子扩散至所述半导体构件中。
具体地，所述密封腔室101内设置有加热器103，所述加热器103用于对所述氢气和/或所述显示器件106进行加热，以使所述氢气和/或所述显示器件106的温度达到所述预定温度。
所述预定温度处于300摄氏度至450摄氏度的范围内。例如，所述预定温度为300摄氏度、305摄氏度、310摄氏度、315摄氏度、320摄氏度、325摄氏度、330摄氏度、335摄氏度、340摄氏度、345摄氏度、350摄氏度、355摄氏度、360摄氏度、365摄氏度、370摄氏度、375摄氏度、380摄氏度、385摄氏度、390摄氏度、400摄氏度、405摄氏度、410摄氏度、415摄氏度、420摄氏度、425摄氏度、430摄氏度、435摄氏度、440摄氏度、445摄氏度、450摄氏度。优选地，所述预定温度处于330摄氏度至400摄氏度的范围内。
所述绝缘层包括第一绝缘层和第二绝缘层，所述第一绝缘层包覆所述半导体构件的至少一部分，所述第二绝缘层的至少一部分设置于所述第一绝缘层上。
所述步骤A(201)包括：
步骤a1(2011)、在基板上设置缓冲层。
步骤a2(2012)、在缓冲层上设置半导体构件。
步骤a3(2013)、在所述半导体构件上以及所述缓冲层除所述半导体构件以外的部分上设置所述第一绝缘层。
步骤a4(2014)、在所述第一绝缘层上设置栅极。
步骤a5(2015)、在所述栅极以及所述第一绝缘层除所述栅极以外的部分上设置所述第二绝缘层。
步骤a6(2016)、对所述第一绝缘层和所述第二绝缘层实施光罩制程，以形成贯穿所述第一绝缘层和所述第二绝缘层的第一通孔和第二通孔。
在所述步骤C(204)之前，所述方法还包括以下步骤：
步骤E(203)、对所述密封腔室101进行抽真空处理。具体地，抽真空器通过所述密封腔室101的密封口104对所述密封腔室101进行抽真空处理。
在所述步骤C(204)之后，所述方法还包括以下步骤：
步骤F(206)、对所述密封腔室101内的所述氢气进行加压处理，以使所述绝缘层中的所述氢原子扩散至所述半导体构件中。具体地，在保持所述密封腔室101内的容纳空间102的体积不变的情况下，所述氢气输入器105继续往所述密封腔室101内输入氢气，以使所述密封腔室101内的气压升高，从而促进更多的氢原子从所述氢气中扩散至所述绝缘层中，以及促进更多的氢原子从所述绝缘层中扩散至所述半导体构件中。或者，压缩所述密封腔室101内的容纳空间102的体积，以使所述密封腔室101内的气压升高，从而促进更多的氢原子从所述氢气中扩散至所述绝缘层中，以及促进更多的氢原子从所述绝缘层中扩散至所述半导体构件中，具体地，所述密封腔室101内的活塞沿预定方向移动，以压缩所述密封腔室101的容纳空间102。
其中，所述步骤F(206)和所述步骤D(205)不分先后，即，在所述步骤C(204)之后，可以先执行步骤D(205)，再执行步骤F(206)，或者先执行步骤F(206)，再执行步骤D(205)，也可以同时执行步骤D(205)和步骤F(206)。
所述半导体构件所对应的半导体材料为多晶硅或非晶硅。
相对现有技术，在本发明中，由于在制造显示器件的过程中往半导体构件中注入较多的氢原子，因此提高了半导体构件中的氢原子的含量，进而提高了半导体构件的电性表现，有利于使得显示器件具有较高的显示质量。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种显示器件制造方法，其特征在于，所述方法包括以下步骤：
步骤A、形成显示器件，其中，所述显示器件设置有半导体构件和绝缘层，所述绝缘层包覆所述半导体构件的至少一部分；
步骤B、将所述显示器件放置于密封腔室内；
步骤C、向所述密封腔室输入氢气，以使所述氢气中的氢原子扩散至所述绝缘层中；
步骤D、将所述密封腔室内的所述氢气和/或所述显示器件加热至预定温度，以使所述绝缘层中的所述氢原子扩散至所述半导体构件中。
2.根据权利要求1所述的显示器件制造方法，其特征在于，所述预定温度处于300摄氏度至450摄氏度的范围内。
3.根据权利要求2所述的显示器件制造方法，其特征在于，所述预定温度处于330摄氏度至400摄氏度的范围内。
4.根据权利要求1所述的显示器件制造方法，其特征在于，在所述步骤C之前，所述方法还包括以下步骤：
步骤E、对所述密封腔室进行抽真空处理。
5.根据权利要求1所述的显示器件制造方法，其特征在于，所述半导体构件所对应的半导体材料为多晶硅或非晶硅。
6.一种显示器件制造装置，其特征在于，所述显示器件制造装置包括：
密封腔室，所述密封腔室用于容置显示器件；
氢气输入器，所述氢气输入器用于向所述密封腔室内输入氢气，以使所述氢气中的氢原子扩散至所述显示器件的绝缘层中；
加热器，所述加热器设置于所述密封腔室内，所述加热器用于将所述密封腔室内的所述氢气和/或所述显示器件加热至预定温度，以使所述绝缘层中的所述氢原子扩散至所述显示器件的半导体构件中。
7.根据权利要求6所述的显示器件制造装置，其特征在于，所述预定温度处于300摄氏度至450摄氏度的范围内。
8.根据权利要求7所述的显示器件制造装置，其特征在于，所述预定温度处于330摄氏度至400摄氏度的范围内。
9.根据权利要求6所述的显示器件制造装置，其特征在于，所述显示器件制造装置还包括：
抽真空器，所述抽真空器用于对所述密封腔室进行抽真空处理。
10.根据权利要求6所述的显示器件制造装置，其特征在于，所述半导体构件所对应的半导体材料为多晶硅或非晶硅。
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