SG11201606071WA - Negative photosensitive resin composition, cured film obtained by curing same, method for producing cured film, optical device provided with cured film, and backside-illuminated cmos image sensor - Google Patents
Negative photosensitive resin composition, cured film obtained by curing same, method for producing cured film, optical device provided with cured film, and backside-illuminated cmos image sensorInfo
- Publication number
- SG11201606071WA SG11201606071WA SG11201606071WA SG11201606071WA SG11201606071WA SG 11201606071W A SG11201606071W A SG 11201606071WA SG 11201606071W A SG11201606071W A SG 11201606071WA SG 11201606071W A SG11201606071W A SG 11201606071WA SG 11201606071W A SG11201606071W A SG 11201606071WA
- Authority
- SG
- Singapore
- Prior art keywords
- cured film
- backside
- resin composition
- image sensor
- optical device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 239000011342 resin composition Substances 0.000 title 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
- G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Materials For Photolithography (AREA)
- Polymerisation Methods In General (AREA)
- Graft Or Block Polymers (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014010948 | 2014-01-24 | ||
PCT/JP2015/051490 WO2015111607A1 (ja) | 2014-01-24 | 2015-01-21 | ネガ型感光性樹脂組成物、それを硬化させてなる硬化膜およびその製造方法ならびにそれを具備する光学デバイスおよび裏面照射型cmosイメージセンサ |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201606071WA true SG11201606071WA (en) | 2016-09-29 |
Family
ID=53681409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201606071WA SG11201606071WA (en) | 2014-01-24 | 2015-01-21 | Negative photosensitive resin composition, cured film obtained by curing same, method for producing cured film, optical device provided with cured film, and backside-illuminated cmos image sensor |
Country Status (8)
Country | Link |
---|---|
US (1) | US9977329B2 (de) |
EP (1) | EP3098653B1 (de) |
JP (1) | JP6572769B2 (de) |
KR (1) | KR102300782B1 (de) |
CN (1) | CN106415393B (de) |
SG (1) | SG11201606071WA (de) |
TW (1) | TWI666511B (de) |
WO (1) | WO2015111607A1 (de) |
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JP6172150B2 (ja) * | 2013-07-02 | 2017-08-02 | 東レ株式会社 | ポジ型感光性樹脂組成物、それを硬化させてなる硬化膜およびそれを具備する光学デバイス |
JP7027886B2 (ja) * | 2016-04-25 | 2022-03-02 | 東レ株式会社 | 樹脂組成物、その硬化膜およびその製造方法ならびに固体撮像素子 |
JP7194492B2 (ja) * | 2016-10-24 | 2022-12-22 | 東京応化工業株式会社 | 感光性組成物、感光性組成物の製造方法、光重合開始剤、及び光重合開始剤の調製方法 |
JP6877202B2 (ja) * | 2016-12-28 | 2021-05-26 | 太陽インキ製造株式会社 | ネガ型光硬化性樹脂組成物、ドライフィルム、硬化物およびプリント配線板 |
WO2018216570A1 (ja) * | 2017-05-24 | 2018-11-29 | 東レ株式会社 | ネガ型感光性樹脂組成物および硬化膜 |
JP6842560B2 (ja) * | 2017-09-26 | 2021-03-17 | 富士フイルム株式会社 | 構造体、隔壁形成用組成物、固体撮像素子および画像表示装置 |
CN111919173B (zh) * | 2018-03-30 | 2024-04-02 | 东丽株式会社 | 正型感光性树脂组合物、其固化膜及具备该固化膜的固体摄像器件 |
WO2019230616A1 (ja) * | 2018-06-01 | 2019-12-05 | 互応化学工業株式会社 | 感光性樹脂組成物、ドライフィルム、及びプリント配線板 |
JP7249119B2 (ja) * | 2018-09-27 | 2023-03-30 | 東京応化工業株式会社 | 感光性樹脂組成物、パターニングされた硬化膜の製造方法及び硬化膜 |
WO2020071204A1 (ja) * | 2018-10-03 | 2020-04-09 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品 |
CN109722033B (zh) * | 2018-12-10 | 2021-08-06 | 沈阳化工大学 | 一种二蒽基二苯醚乙烯基硅橡胶制备方法 |
US11851557B2 (en) * | 2019-02-15 | 2023-12-26 | AGC Inc. | Curable composition, cured product and laminate |
KR102331157B1 (ko) * | 2019-10-23 | 2021-11-26 | (주)휴넷플러스 | 폴리실록산 공중합체, 이의 제조방법 및 이를 포함하는 수지 조성물 |
CN113448171B (zh) * | 2020-03-27 | 2024-04-16 | 赫拉化学科技有限公司 | 光敏树脂组合物、图案形成方法及基板保护用覆膜的制备方法 |
WO2022211070A1 (ja) * | 2021-03-31 | 2022-10-06 | 日産化学株式会社 | 反応性シルセスキオキサン化合物を含有した光導波路用の重合性組成物 |
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JP5729329B2 (ja) * | 2011-03-31 | 2015-06-03 | Jsr株式会社 | 感放射線性組成物、並びに硬化膜及びその形成方法 |
KR102027756B1 (ko) | 2012-01-19 | 2019-10-02 | 닛산 가가쿠 가부시키가이샤 | 네가티브형 감광성 수지 조성물 |
JP6317253B2 (ja) * | 2012-05-17 | 2018-04-25 | 太陽インキ製造株式会社 | 液状現像型のマレイミド組成物、プリント配線板 |
JP2014084360A (ja) | 2012-10-22 | 2014-05-12 | Toagosei Co Ltd | 活性エネルギー線硬化型アンダーコート用組成物及び積層体 |
TWI479269B (zh) * | 2012-12-25 | 2015-04-01 | Chi Mei Corp | 感光性聚矽氧烷組成物及其應用 |
JP6417669B2 (ja) | 2013-03-05 | 2018-11-07 | 東レ株式会社 | 感光性樹脂組成物、保護膜及び絶縁膜並びにタッチパネルの製造方法 |
JP6049521B2 (ja) | 2013-03-29 | 2016-12-21 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜、画像形成方法、固体撮像素子、カラーフィルタおよび紫外線吸収剤 |
JP5804336B2 (ja) | 2014-04-16 | 2015-11-04 | 日立化成株式会社 | 感光性樹脂組成物及び感光性フィルム、永久レジスト |
-
2015
- 2015-01-21 KR KR1020167021968A patent/KR102300782B1/ko active IP Right Grant
- 2015-01-21 CN CN201580005547.3A patent/CN106415393B/zh active Active
- 2015-01-21 JP JP2015504792A patent/JP6572769B2/ja active Active
- 2015-01-21 SG SG11201606071WA patent/SG11201606071WA/en unknown
- 2015-01-21 US US15/113,119 patent/US9977329B2/en active Active
- 2015-01-21 WO PCT/JP2015/051490 patent/WO2015111607A1/ja active Application Filing
- 2015-01-21 EP EP15740612.5A patent/EP3098653B1/de active Active
- 2015-01-23 TW TW104102170A patent/TWI666511B/zh active
Also Published As
Publication number | Publication date |
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EP3098653A4 (de) | 2017-10-04 |
US20170010532A1 (en) | 2017-01-12 |
EP3098653B1 (de) | 2020-07-29 |
TW201533529A (zh) | 2015-09-01 |
US9977329B2 (en) | 2018-05-22 |
WO2015111607A1 (ja) | 2015-07-30 |
EP3098653A1 (de) | 2016-11-30 |
CN106415393A (zh) | 2017-02-15 |
JP6572769B2 (ja) | 2019-09-11 |
TWI666511B (zh) | 2019-07-21 |
KR102300782B1 (ko) | 2021-09-13 |
CN106415393B (zh) | 2020-04-07 |
KR20160113155A (ko) | 2016-09-28 |
JPWO2015111607A1 (ja) | 2017-03-23 |
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