SE443682B - Mosfet-anordning for hogspenningsbruk - Google Patents

Mosfet-anordning for hogspenningsbruk

Info

Publication number
SE443682B
SE443682B SE7908479A SE7908479A SE443682B SE 443682 B SE443682 B SE 443682B SE 7908479 A SE7908479 A SE 7908479A SE 7908479 A SE7908479 A SE 7908479A SE 443682 B SE443682 B SE 443682B
Authority
SE
Sweden
Prior art keywords
emitter
area
conductivity
channels
areas
Prior art date
Application number
SE7908479A
Other languages
English (en)
Swedish (sv)
Other versions
SE7908479L (sv
Inventor
A Lidow
T Herman
V Rumennik
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26715426&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SE443682(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of SE7908479L publication Critical patent/SE7908479L/xx
Publication of SE443682B publication Critical patent/SE443682B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SE7908479A 1978-10-13 1979-10-12 Mosfet-anordning for hogspenningsbruk SE443682B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95131078A 1978-10-13 1978-10-13
US3866279A 1979-05-14 1979-05-14

Publications (2)

Publication Number Publication Date
SE7908479L SE7908479L (sv) 1980-04-14
SE443682B true SE443682B (sv) 1986-03-03

Family

ID=26715426

Family Applications (2)

Application Number Title Priority Date Filing Date
SE7908479A SE443682B (sv) 1978-10-13 1979-10-12 Mosfet-anordning for hogspenningsbruk
SE8503615A SE465444B (sv) 1978-10-13 1985-07-26 Mosfet-anordning med polygonal kanalstruktur

Family Applications After (1)

Application Number Title Priority Date Filing Date
SE8503615A SE465444B (sv) 1978-10-13 1985-07-26 Mosfet-anordning med polygonal kanalstruktur

Country Status (19)

Country Link
JP (2) JP2622378B2 (cs)
AR (1) AR219006A1 (cs)
BR (1) BR7906338A (cs)
CA (2) CA1123119A (cs)
CH (2) CH642485A5 (cs)
CS (1) CS222676B2 (cs)
DE (2) DE2954481C2 (cs)
DK (3) DK157272C (cs)
ES (1) ES484652A1 (cs)
FR (1) FR2438917A1 (cs)
GB (1) GB2033658B (cs)
HU (1) HU182506B (cs)
IL (1) IL58128A (cs)
IT (1) IT1193238B (cs)
MX (1) MX147137A (cs)
NL (1) NL175358C (cs)
PL (1) PL123961B1 (cs)
SE (2) SE443682B (cs)
SU (1) SU1621817A3 (cs)

Families Citing this family (47)

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US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
DE3040775C2 (de) * 1980-10-29 1987-01-15 Siemens AG, 1000 Berlin und 8000 München Steuerbares MIS-Halbleiterbauelement
US4412242A (en) 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
GB2111745B (en) * 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
DE3346286A1 (de) * 1982-12-21 1984-06-28 International Rectifier Corp., Los Angeles, Calif. Hochleistungs-metalloxid-feldeffekttransistor- halbleiterbauteil
JPS59167066A (ja) * 1983-03-14 1984-09-20 Nissan Motor Co Ltd 縦形ｍｏｓｆｅｔ
JPS6010677A (ja) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法
IT1247293B (it) * 1990-05-09 1994-12-12 Int Rectifier Corp Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione
US5766966A (en) * 1996-02-09 1998-06-16 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
US5304831A (en) * 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
DE59208987D1 (de) * 1992-08-10 1997-11-27 Siemens Ag Leistungs-MOSFET mit verbesserter Avalanche-Festigkeit
JPH06268227A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd 絶縁ゲート型バイポーラトランジスタ
DE69321966T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Leistungs-Halbleiterbauelement
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
DE69321965T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS-Leistungs-Chip-Typ und Packungszusammenbau
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
DE69429913T2 (de) * 1994-06-23 2002-10-31 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Verfahren zur Herstellung eines Leistungsbauteils in MOS-Technik
DE69418037T2 (de) * 1994-08-02 1999-08-26 Consorzio Per La Ricerca Sulla Microelettronica Ne Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
DE69534919T2 (de) * 1995-10-30 2007-01-25 Stmicroelectronics S.R.L., Agrate Brianza Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe
DE69533134T2 (de) * 1995-10-30 2005-07-07 Stmicroelectronics S.R.L., Agrate Brianza Leistungsbauteil hoher Dichte in MOS-Technologie
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
DE69518653T2 (de) * 1995-12-28 2001-04-19 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS-Technologie-Leistungsanordnung in integrierter Struktur
DE69839439D1 (de) 1998-05-26 2008-06-19 St Microelectronics Srl MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
WO2000062345A1 (en) 1999-04-09 2000-10-19 Shindengen Electric Manufacturing Co., Ltd. High-voltage semiconductor device
JP4122113B2 (ja) * 1999-06-24 2008-07-23 新電元工業株式会社 高破壊耐量電界効果型トランジスタ
US6344379B1 (en) 1999-10-22 2002-02-05 Semiconductor Components Industries Llc Semiconductor device with an undulating base region and method therefor
JP4845293B2 (ja) * 2000-08-30 2011-12-28 新電元工業株式会社 電界効果トランジスタ
JP2006295134A (ja) 2005-03-17 2006-10-26 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US10115815B2 (en) 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
US9530844B2 (en) 2012-12-28 2016-12-27 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
JP5907097B2 (ja) * 2013-03-18 2016-04-20 三菱電機株式会社 半導体装置
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
WO2016028944A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US10615274B2 (en) 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness

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US4015278A (en) * 1974-11-26 1977-03-29 Fujitsu Ltd. Field effect semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
JPS5374385A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Manufacture of field effect semiconductor device
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
JPH05185381A (ja) * 1992-01-10 1993-07-27 Yuum Kogyo:Kk 替刃式鋸用ハンドル

Also Published As

Publication number Publication date
DK157272C (da) 1990-04-30
PL123961B1 (en) 1982-12-31
SE7908479L (sv) 1980-04-14
CH642485A5 (de) 1984-04-13
SE8503615D0 (sv) 1985-07-26
JPH07169950A (ja) 1995-07-04
PL218878A1 (cs) 1980-08-11
IT1193238B (it) 1988-06-15
DE2940699A1 (de) 1980-04-24
NL175358B (nl) 1984-05-16
IT7926435A0 (it) 1979-10-11
CA1123119A (en) 1982-05-04
AR219006A1 (es) 1980-07-15
ES484652A1 (es) 1980-09-01
JPS6323365A (ja) 1988-01-30
CH660649A5 (de) 1987-05-15
BR7906338A (pt) 1980-06-24
HU182506B (en) 1984-01-30
IL58128A (en) 1981-12-31
DK512488D0 (da) 1988-09-15
SE8503615L (sv) 1985-07-26
DE2940699C2 (de) 1986-04-03
MX147137A (es) 1982-10-13
JP2643095B2 (ja) 1997-08-20
NL175358C (nl) 1984-10-16
DK512388A (da) 1988-09-15
FR2438917A1 (fr) 1980-05-09
GB2033658B (en) 1983-03-02
DE2954481C2 (de) 1990-12-06
CA1136291A (en) 1982-11-23
SU1621817A3 (ru) 1991-01-15
DK512388D0 (da) 1988-09-15
FR2438917B1 (cs) 1984-09-07
DK157272B (da) 1989-11-27
SE465444B (sv) 1991-09-09
JP2622378B2 (ja) 1997-06-18
CS222676B2 (en) 1983-07-29
DK350679A (da) 1980-04-14
GB2033658A (en) 1980-05-21
DK512488A (da) 1988-09-15
NL7907472A (nl) 1980-04-15

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