RU2672962C2 - Структура подложки и способ ее изготовления - Google Patents

Структура подложки и способ ее изготовления Download PDF

Info

Publication number
RU2672962C2
RU2672962C2 RU2016111694A RU2016111694A RU2672962C2 RU 2672962 C2 RU2672962 C2 RU 2672962C2 RU 2016111694 A RU2016111694 A RU 2016111694A RU 2016111694 A RU2016111694 A RU 2016111694A RU 2672962 C2 RU2672962 C2 RU 2672962C2
Authority
RU
Russia
Prior art keywords
group
substrate
thin film
organic
structural formula
Prior art date
Application number
RU2016111694A
Other languages
English (en)
Russian (ru)
Other versions
RU2016111694A (ru
Inventor
Мён Мо СОН
Кё Сок ХАН
Original Assignee
Июкф-Хю (Индастри-Юниверсити-Кооперейшн Фаундейшн Ханян Юниверсити)
БАСФ Коатингс ГмбХ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Июкф-Хю (Индастри-Юниверсити-Кооперейшн Фаундейшн Ханян Юниверсити), БАСФ Коатингс ГмбХ filed Critical Июкф-Хю (Индастри-Юниверсити-Кооперейшн Фаундейшн Ханян Юниверсити)
Publication of RU2016111694A publication Critical patent/RU2016111694A/ru
Application granted granted Critical
Publication of RU2672962C2 publication Critical patent/RU2672962C2/ru

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/06—Zinc compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/062—Al linked exclusively to C
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G02F2201/501—Blocking layers, e.g. against migration of ions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material
    • G02F2202/022—Materials and properties organic material polymeric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Liquid Crystal (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
RU2016111694A 2013-08-30 2013-11-04 Структура подложки и способ ее изготовления RU2672962C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2013-0104463 2013-08-30
KR1020130104463 2013-08-30
PCT/KR2013/009910 WO2015030298A1 (ko) 2013-08-30 2013-11-04 기판 구조물 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
RU2016111694A RU2016111694A (ru) 2017-10-05
RU2672962C2 true RU2672962C2 (ru) 2018-11-21

Family

ID=52586830

Family Applications (2)

Application Number Title Priority Date Filing Date
RU2016111694A RU2672962C2 (ru) 2013-08-30 2013-11-04 Структура подложки и способ ее изготовления
RU2016111693A RU2670303C2 (ru) 2013-08-30 2013-11-04 Функциональная тонкая пленка и способ ее изготовления

Family Applications After (1)

Application Number Title Priority Date Filing Date
RU2016111693A RU2670303C2 (ru) 2013-08-30 2013-11-04 Функциональная тонкая пленка и способ ее изготовления

Country Status (12)

Country Link
US (2) US9576876B2 (enExample)
EP (2) EP3040442B1 (enExample)
JP (2) JP6654753B2 (enExample)
KR (2) KR20150026746A (enExample)
CN (2) CN105745353B (enExample)
BR (2) BR112016004476A2 (enExample)
CA (2) CA2922612A1 (enExample)
MX (2) MX389406B (enExample)
RU (2) RU2672962C2 (enExample)
SG (2) SG11201600923YA (enExample)
TW (2) TWI606111B (enExample)
WO (2) WO2015030297A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2672962C2 (ru) * 2013-08-30 2018-11-21 Июкф-Хю (Индастри-Юниверсити-Кооперейшн Фаундейшн Ханян Юниверсити) Структура подложки и способ ее изготовления
KR101816967B1 (ko) * 2013-09-30 2018-01-09 주식회사 엘지화학 유기전자소자용 기판 및 이의 제조방법
MX390409B (es) * 2014-06-12 2025-03-20 Basf Coatings Gmbh Proceso para producir laminados orgánicos-inorgánicos flexibles.
WO2016150759A1 (en) * 2015-03-25 2016-09-29 Basf Coatings Gmbh Process for producing flexible organic-inorganic laminates
US20190036077A1 (en) * 2016-02-18 2019-01-31 Sharp Kabushiki Kaisha Method for producing organic el display device, and organic el display device
KR102586045B1 (ko) * 2016-07-12 2023-10-10 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
US20190040503A1 (en) * 2017-08-03 2019-02-07 Hrl Laboratories, Llc Feedstocks for additive manufacturing, and methods of using the same
WO2019010696A1 (en) * 2017-07-14 2019-01-17 General Electric Company METHOD FOR DEPOSITION LAYERED BY GAS PHASE MOLECULAR LAYER ON A MICROPOROUS SUPPORT
US10673046B2 (en) * 2018-04-13 2020-06-02 GM Global Technology Operations LLC Separator for lithium metal based batteries
JP7451486B2 (ja) * 2018-07-05 2024-03-18 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツング 透明導電性フィルム
KR102224346B1 (ko) * 2019-07-11 2021-03-05 한양대학교 산학협력단 유무기 하이브리드층, 이 층을 구비하는 유무기 적층체, 및 이 적층체를 가스 배리어로 구비하는 유기전자소자
CN110508155B (zh) * 2019-08-21 2021-09-03 南京大学 一种锌基无机-有机杂化纳米多孔分离膜的制备方法
CN110635044B (zh) * 2019-11-04 2021-07-06 吉林大学 一种有机金属卤化物钙钛矿太阳能电池的复合封装薄膜及其制备方法
CN112410763A (zh) * 2020-10-28 2021-02-26 武汉华星光电半导体显示技术有限公司 一种薄膜封装层，其制备方法及可折叠显示装置
TWI824213B (zh) * 2020-12-19 2023-12-01 逢甲大學 可撓式透明導電複合膜及其製造方法
KR102558965B1 (ko) * 2021-03-18 2023-07-25 한국과학기술연구원 신축성 표시 장치 및 신축성 표시 장치 제조 방법
TW202311054A (zh) 2021-05-06 2023-03-16 德商巴斯夫塗料有限責任公司 多層障壁膜、其製造及其於光伏打應用之用途
WO2023018308A1 (ko) * 2021-08-12 2023-02-16 한양대학교 산학협력단 분자선 구조를 갖는 다층 분자막 포토레지스트 및 이의 제조방법
EP4386482A4 (en) * 2021-08-12 2025-10-22 Iucf Hyu MULTILAYER MOLECULAR FILM PHOTOSENSITIVE RESIN HAVING MOLECULAR LINE STRUCTURE AND METHOD FOR PRODUCING SAME
KR102796366B1 (ko) * 2022-01-13 2025-04-18 한양대학교 산학협력단 분자선 구조를 갖는 다층 분자막 포토레지스트의 제조방법
CN115124727B (zh) * 2022-07-08 2023-07-14 中国科学院山西煤炭化学研究所 一种mof薄膜的制备方法
CN117845191A (zh) * 2022-09-30 2024-04-09 华为技术有限公司 复合薄膜及其制备方法和应用
CN120615105A (zh) 2022-12-14 2025-09-09 巴斯夫涂料有限公司 多层阻挡膜涂覆的聚合物基底、其制造和在电子装置中的用途
WO2024167351A1 (ko) * 2023-02-10 2024-08-15 한양대학교 산학협력단 분자선 구조를 갖는 포지티브형의 다층 분자막 포토레지스트
WO2024167360A1 (ko) * 2023-02-10 2024-08-15 한양대학교 산학협력단 배위결합에 의해 가교가능한 분자선 구조를 갖는 다층 분자막 포토레지스트
CN116794116A (zh) * 2023-05-29 2023-09-22 南京大学 一种基于无机-有机杂化纳米多孔膜/半导体金属氧化物的薄膜氢气传感器及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU94018051A (ru) * 1994-05-17 1996-04-10 В.В. Дроботенко Способ получения металлооксидных покрытий (его варианты)
US20050153077A1 (en) * 2003-12-03 2005-07-14 Anthony Gedeon Method of resisting contaminant build up and oxidation of vehicle surfaces and other surfaces
RU2462793C2 (ru) * 2007-12-28 2012-09-27 Юниверсите Де Ля Медитерране Экс-Марсель Ii Гибридные нанокомпозиционные материалы
KR20120128113A (ko) * 2011-05-16 2012-11-26 주식회사 엘지화학 다층 플라스틱 기판 및 이의 제조방법
JP5220106B2 (ja) * 2007-06-22 2013-06-26 ザ・リージエンツ・オブ・ザ・ユニバーシティ・オブ・コロラド 原子層堆積法及び分子層堆積法を用いて製造された有機電子デバイス用の保護被膜

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002053669A (ja) * 2000-06-01 2002-02-19 Osaka Organic Chem Ind Ltd 多次元有機・無機複合体化合物およびその製造方法
US6866949B2 (en) 2002-03-08 2005-03-15 Dai Nippon Printing Co., Ltd. Substrate film, gas barrier film, and display using the same
TW548853B (en) * 2002-09-13 2003-08-21 Ind Tech Res Inst Method of manufacturing flexible TFT display
US7285440B2 (en) * 2002-11-25 2007-10-23 International Business Machines Corporation Organic underlayers that improve the performance of organic semiconductors
JP2004231784A (ja) * 2003-01-30 2004-08-19 Konica Minolta Holdings Inc 有機−無機ポリマーハイブリッドフィルム、その製造方法、該フィルムを用いたディスプレイ及びタッチパネル
US7229703B2 (en) 2003-03-31 2007-06-12 Dai Nippon Printing Co. Ltd. Gas barrier substrate
CA2525622C (en) 2003-05-16 2010-10-26 Toppan Printing Co., Ltd. Transparent gas barrier laminated film, and electroluminescent light-emiiting element, electroluminescent display device, and electrophoretic display panel using the same
JP2005289885A (ja) * 2004-03-31 2005-10-20 Osaka Organic Chem Ind Ltd 多次元有機・無機複合体化合物、複合焼成体およびこれらの製造方法
JP2005297498A (ja) 2004-04-16 2005-10-27 Dainippon Printing Co Ltd 可撓性基板およびそれを用いた有機デバイス
US7378157B2 (en) 2004-06-28 2008-05-27 Dai Nippon Printing Co., Ltd. Gas barrier film, and display substrate and display using the same
KR101001441B1 (ko) * 2004-08-17 2010-12-14 삼성전자주식회사 유무기 금속 하이브리드 물질 및 이를 포함하는 유기절연체 조성물
NO20045674D0 (no) * 2004-12-28 2004-12-28 Uni I Oslo Thin films prepared with gas phase deposition technique
JP2007185937A (ja) 2005-12-12 2007-07-26 Fujifilm Corp 有機−無機ハイブリッド材料、ガスバリヤーフィルム及びその製造方法
KR20070084683A (ko) * 2006-02-21 2007-08-27 국민대학교산학협력단 분자층 증착법
JP2007273094A (ja) 2006-03-30 2007-10-18 Toppan Printing Co Ltd 有機エレクトロルミネッセンス素子およびその製造方法
DE102006016280A1 (de) * 2006-04-01 2007-10-04 Pvflex Solar Gmbh Glasloser Solarstrom-Modul mit flexiblen Dünnschicht-Zellen und Verfahren zu seiner Herstellung
JP2008087163A (ja) 2006-09-29 2008-04-17 Fujifilm Corp ガスバリア性積層フィルム、およびそれを用いた画像表示素子
US10092927B2 (en) 2006-11-13 2018-10-09 The Regents Of The University Of Colorado, A Body Corporate Molecular layer deposition process for making organic or organic-inorganic polymers
JP2008218632A (ja) * 2007-03-02 2008-09-18 Fujifilm Corp 電子デバイス
US8197942B2 (en) 2007-03-23 2012-06-12 Dai Nippon Printing Co., Ltd. Gas barrier sheet
JP5127277B2 (ja) 2007-04-05 2013-01-23 新日鉄住金マテリアルズ株式会社 表面平坦性絶縁膜形成用塗布溶液、表面平坦性絶縁膜被覆基材、及び表面平坦性絶縁膜被覆基材の製造方法
JP5198131B2 (ja) 2007-05-14 2013-05-15 富士フイルム株式会社 バリアフィルムおよび素子
JP5510766B2 (ja) 2007-06-20 2014-06-04 大日本印刷株式会社 イオンプレーティング用蒸発源材料の原料粉末、イオンプレーティング用蒸発源材料及びその製造方法、ガスバリア性シート及びその製造方法
US20090021797A1 (en) * 2007-07-17 2009-01-22 Luciano Joseph W All-In-One Device With Integrated Monitor
JP2010006039A (ja) 2007-09-05 2010-01-14 Fujifilm Corp ガスバリアフィルムおよびガスバリアフィルムを用いて表示素子を封止する方法。
US8067085B2 (en) 2007-09-14 2011-11-29 Fujifilm Corporation Gas barrier film, and display device comprising the same
US7858144B2 (en) * 2007-09-26 2010-12-28 Eastman Kodak Company Process for depositing organic materials
US8776238B2 (en) * 2008-07-16 2014-07-08 International Business Machines Corporation Verifying certificate use
US8241749B2 (en) 2008-09-11 2012-08-14 Fujifilm Corporation Barrier laminate, gas barrier film, and device using the same
JP2011046060A (ja) 2009-08-26 2011-03-10 Fujifilm Corp ガスバリアフィルムおよびガスバリアフィルムの製造方法
JP4821925B2 (ja) 2009-11-27 2011-11-24 大日本印刷株式会社 ガスバリア性フィルム、装置、及びガスバリア性フィルムの製造方法
WO2011115147A1 (ja) * 2010-03-17 2011-09-22 コニカミノルタホールディングス株式会社 有機電子デバイスおよびその製造方法
US20130017400A1 (en) 2010-03-25 2013-01-17 Toppan Printing Co., Ltd. Gas barrier laminate and packaging
JP5598080B2 (ja) 2010-05-17 2014-10-01 大日本印刷株式会社 ガスバリア性シートの製造方法
JP5913809B2 (ja) 2011-01-05 2016-04-27 リンテック株式会社 透明電極基板、その製造方法、該透明電極基板を有する電子デバイス及び太陽電池
JP5752438B2 (ja) * 2011-02-23 2015-07-22 グンゼ株式会社 ガスバリアフィルム
KR101432737B1 (ko) 2011-07-28 2014-08-22 한양대학교 산학협력단 유기-무기 혼성 박막 및 이의 제조 방법
RU2672962C2 (ru) * 2013-08-30 2018-11-21 Июкф-Хю (Индастри-Юниверсити-Кооперейшн Фаундейшн Ханян Юниверсити) Структура подложки и способ ее изготовления

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU94018051A (ru) * 1994-05-17 1996-04-10 В.В. Дроботенко Способ получения металлооксидных покрытий (его варианты)
US20050153077A1 (en) * 2003-12-03 2005-07-14 Anthony Gedeon Method of resisting contaminant build up and oxidation of vehicle surfaces and other surfaces
JP5220106B2 (ja) * 2007-06-22 2013-06-26 ザ・リージエンツ・オブ・ザ・ユニバーシティ・オブ・コロラド 原子層堆積法及び分子層堆積法を用いて製造された有機電子デバイス用の保護被膜
RU2462793C2 (ru) * 2007-12-28 2012-09-27 Юниверсите Де Ля Медитерране Экс-Марсель Ii Гибридные нанокомпозиционные материалы
KR20120128113A (ko) * 2011-05-16 2012-11-26 주식회사 엘지화학 다층 플라스틱 기판 및 이의 제조방법

Also Published As

Publication number Publication date
BR112016004389B1 (pt) 2021-11-23
CN105745353A (zh) 2016-07-06
BR112016004476A2 (pt) 2017-09-12
BR112016004389A2 (pt) 2017-09-12
TW201508047A (zh) 2015-03-01
CN105723011A (zh) 2016-06-29
TW201508083A (zh) 2015-03-01
US10418300B2 (en) 2019-09-17
MX389406B (es) 2025-03-20
EP3040442A4 (en) 2017-04-12
US20160215394A1 (en) 2016-07-28
CN105723011B (zh) 2019-05-10
RU2016111693A (ru) 2017-10-06
JP2016537510A (ja) 2016-12-01
JP6286557B2 (ja) 2018-02-28
EP3040442B1 (en) 2024-02-14
MX2016002432A (es) 2016-12-07
KR102289064B1 (ko) 2021-08-12
KR20150026748A (ko) 2015-03-11
US9576876B2 (en) 2017-02-21
CA2922615A1 (en) 2015-03-05
JP2016534231A (ja) 2016-11-04
TWI606111B (zh) 2017-11-21
CA2922612A1 (en) 2015-03-05
SG11201600921XA (en) 2016-03-30
TWI521083B (zh) 2016-02-11
MX2016002433A (es) 2016-12-09
EP3040443A4 (en) 2017-04-12
KR20150026746A (ko) 2015-03-11
WO2015030298A1 (ko) 2015-03-05
EP3040443A1 (en) 2016-07-06
EP3040442A1 (en) 2016-07-06
EP3040443B1 (en) 2024-03-06
RU2016111694A (ru) 2017-10-05
SG11201600923YA (en) 2016-03-30
MX390737B (es) 2025-03-21
RU2670303C2 (ru) 2018-10-22
CN105745353B (zh) 2019-07-05
US20160276241A1 (en) 2016-09-22
WO2015030297A1 (ko) 2015-03-05
JP6654753B2 (ja) 2020-02-26

Similar Documents

Publication Publication Date Title
RU2672962C2 (ru) Структура подложки и способ ее изготовления
Pan et al. RETRACTED: Investigation of structural, optical and electronic properties in Al–Sn co-doped ZnO thin films
US20100193351A1 (en) Method for preparing transparent conducting film coated with azo/ag/azo multilayer thin film
US10311992B2 (en) Transparent conducting films including complex oxides
CA2950012A1 (en) Process for producing flexible organic-inorganic laminates
JP6657588B2 (ja) 積層体及びその製造方法
Murthy et al. Fabrication and the impact of Fe and Al substitution on structural, morphological, vibrational and optical properties of Fe: Al co-doping zinc oxide nanostructured thin films developed by Arduino based spin coating device
Jang et al. Effect of ALD surface treatment on structural and optical properties of ZnO nanorods
Plirdpring et al. Effect of annealing temperature on structure and optical properties of Ta2O5 thin films prepared by DC magnetron sputtering
TWI814855B (zh) 透明導電膜
Ghiyasi et al. Tunable Electrical and Optical Properties in Atomic Layer Deposited TiO2: Pt Thin Films via Dynamic Metallic Nanoparticle Formation
JPWO2017090576A1 (ja) ガスバリアー性フィルム及び電子デバイス
Khosravani et al. Investigation of Structural, Morphological, and Photoluminescence Properties of Nanocrystalline Copper doped Tin Oxide Thin Films Grown by RF Sputtering Method
KR101573979B1 (ko) 도전성층 및 도전성층의 제조 방법
JP2010040517A (ja) 透明導電性基板およびその製造方法
Li et al. P‐202L: Late‐News Poster: Structural and Optical Properties of Aligned ZnO Nanorods Using Al‐doped ZnO Seed Layer on Flexible Polyethylene Naphthalate Substrates
Li et al. Structural and Optical Properties of Aligned ZnO Nanorods Using Al-doped ZnO Seed Layer on Flexible Polyethylene Naphthalate Substrates.
CN103250213A (zh) 制备透明导电氧化物膜的方法

Legal Events

Date Code Title Description
PC41 Official registration of the transfer of exclusive right

Effective date: 20200311