NO20062438L - Alkaliske post-plasmaetsings-/askereste-fjernere og fotoresiste strippingssammensetninger inneholdende metallhalogen korrosjonsinhibitor - Google Patents
Alkaliske post-plasmaetsings-/askereste-fjernere og fotoresiste strippingssammensetninger inneholdende metallhalogen korrosjonsinhibitorInfo
- Publication number
- NO20062438L NO20062438L NO20062438A NO20062438A NO20062438L NO 20062438 L NO20062438 L NO 20062438L NO 20062438 A NO20062438 A NO 20062438A NO 20062438 A NO20062438 A NO 20062438A NO 20062438 L NO20062438 L NO 20062438L
- Authority
- NO
- Norway
- Prior art keywords
- metal
- metal halide
- compositions containing
- plasma etching
- corrosion inhibitor
- Prior art date
Links
- 229910001507 metal halide Inorganic materials 0.000 title abstract 3
- 150000005309 metal halides Chemical class 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 title abstract 3
- 230000007797 corrosion Effects 0.000 title abstract 2
- 238000005260 corrosion Methods 0.000 title abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 2
- 239000003112 inhibitor Substances 0.000 title 1
- 238000001020 plasma etching Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 2
- 239000002585 base Substances 0.000 abstract 2
- 239000003513 alkali Substances 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 150000004820 halides Chemical group 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D11/00—Special methods for preparing compositions containing mixtures of detergents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Oppfinnelsen fremskaffer alkaliske blandinger brukbare i den mikroelektroniske industrien for stripping eller rensing av halvlederbrikkesubstrater ved fjeming av fotoresistrester og andre uønskede forurensninger. Blandingene inneholder (a) en eller flere baser og (b) en eller flere metallkorrosjonshemmende metallhalogenider av formelen: WzMXy, der M er et metall valgt fra gruppen Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru og Sb; X er et halogenid valgt fra F, Cl, Br og I; W er valgt fra H, til et alkali eller alkalisk jordmetall og en metallionefri hydroksidbasedel; y er et tall fra 4 til 6, avhengig av metallhalogenidet; og z er et tall 1, 2 eller 3.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51523403P | 2003-10-29 | 2003-10-29 | |
PCT/US2004/034541 WO2005043245A2 (en) | 2003-10-29 | 2004-10-20 | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20062438L true NO20062438L (no) | 2006-07-26 |
Family
ID=34549382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20062438A NO20062438L (no) | 2003-10-29 | 2006-05-29 | Alkaliske post-plasmaetsings-/askereste-fjernere og fotoresiste strippingssammensetninger inneholdende metallhalogen korrosjonsinhibitor |
Country Status (13)
Country | Link |
---|---|
US (1) | US7671001B2 (no) |
EP (1) | EP1692572A2 (no) |
JP (1) | JP4620680B2 (no) |
KR (1) | KR101132533B1 (no) |
CN (1) | CN1875325B (no) |
BR (1) | BRPI0416067A (no) |
CA (1) | CA2544198C (no) |
IL (1) | IL175146A (no) |
NO (1) | NO20062438L (no) |
SG (1) | SG147482A1 (no) |
TW (1) | TWI350431B (no) |
WO (1) | WO2005043245A2 (no) |
ZA (1) | ZA200603387B (no) |
Families Citing this family (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
ATE376050T1 (de) * | 2003-06-27 | 2007-11-15 | Imec Inter Uni Micro Electr | Halbleiterreinigungslösung |
BRPI0413657A (pt) * | 2003-08-19 | 2006-10-24 | Mallinckrodt Baker Inc | Composição aquosa, isenta de silicato, para limpeza de substratos microeletrÈnicos, bem como processo para limpeza de um substrato microeletrÈnico sem produzir qualquer corrosão metálica substancial |
KR101190907B1 (ko) * | 2004-12-07 | 2012-10-12 | 가오 가부시키가이샤 | 박리제 조성물 |
US7247579B2 (en) * | 2004-12-23 | 2007-07-24 | Lam Research Corporation | Cleaning methods for silicon electrode assembly surface contamination removal |
KR100675284B1 (ko) * | 2005-02-01 | 2007-01-26 | 삼성전자주식회사 | 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법 |
US7888302B2 (en) * | 2005-02-03 | 2011-02-15 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
US7923424B2 (en) * | 2005-02-14 | 2011-04-12 | Advanced Process Technologies, Llc | Semiconductor cleaning using superacids |
JP4988165B2 (ja) * | 2005-03-11 | 2012-08-01 | 関東化学株式会社 | フォトレジスト剥離液組成物及びフォトレジストの剥離方法 |
SG161211A1 (en) * | 2005-04-04 | 2010-05-27 | Mallinckrodt Baker Inc | Compositions for cleaning ion implanted photoresist in front end of line applications |
KR100655647B1 (ko) * | 2005-07-04 | 2006-12-08 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법 |
DE102005041533B3 (de) * | 2005-08-31 | 2007-02-08 | Atotech Deutschland Gmbh | Lösung und Verfahren zum Entfernen von ionischen Verunreinigungen von einem Werkstück |
KR101444468B1 (ko) * | 2005-10-05 | 2014-10-30 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제 |
US8772214B2 (en) * | 2005-10-14 | 2014-07-08 | Air Products And Chemicals, Inc. | Aqueous cleaning composition for removing residues and method using same |
TWI417683B (zh) * | 2006-02-15 | 2013-12-01 | Avantor Performance Mat Inc | 用於微電子基板之穩定化,非水性清潔組合物 |
US7732393B2 (en) * | 2006-03-20 | 2010-06-08 | Cabot Microelectronics Corporation | Oxidation-stabilized CMP compositions and methods |
US20070225186A1 (en) * | 2006-03-27 | 2007-09-27 | Matthew Fisher | Alkaline solutions for post CMP cleaning processes |
US9058975B2 (en) * | 2006-06-09 | 2015-06-16 | Lam Research Corporation | Cleaning solution formulations for substrates |
JP4912794B2 (ja) * | 2006-08-29 | 2012-04-11 | 花王株式会社 | 液体洗浄剤組成物 |
US8685909B2 (en) * | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
US8026201B2 (en) * | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
CA2677964A1 (en) * | 2007-02-14 | 2008-08-21 | Mallinckrodt Baker, Inc. | Peroxide activated oxometalate based formulations for removal of etch residue |
TW200908148A (en) * | 2007-03-31 | 2009-02-16 | Advanced Tech Materials | Methods for stripping material for wafer reclamation |
US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
EP2149147A1 (en) * | 2007-05-14 | 2010-02-03 | Basf Se | Method for removing etching residues from semiconductor components |
US7976723B2 (en) * | 2007-05-17 | 2011-07-12 | International Business Machines Corporation | Method for kinetically controlled etching of copper |
KR101561708B1 (ko) * | 2007-05-17 | 2015-10-19 | 인티그리스, 인코포레이티드 | Cmp후 세정 제제용 신규한 항산화제 |
WO2009013987A1 (ja) * | 2007-07-26 | 2009-01-29 | Mitsubishi Gas Chemical Company, Inc. | 洗浄防食用組成物および半導体素子または表示素子の製造方法 |
CA2716641A1 (en) * | 2008-02-29 | 2009-09-03 | Mallinckrodt Baker, Inc. | Microelectronic substrate cleaning compositions |
KR101495683B1 (ko) * | 2008-09-26 | 2015-02-26 | 솔브레인 주식회사 | 액정표시장치의 구리 및 구리/몰리브데늄 또는 구리/몰리브데늄합금 전극용 식각조성물 |
KR101752684B1 (ko) * | 2008-10-21 | 2017-07-04 | 엔테그리스, 아이엔씨. | 구리 세척 및 보호 조성물 |
BRPI1008034A2 (pt) * | 2009-02-25 | 2016-03-15 | Avantor Performance Mat Inc | composições removedoras para limpeza de fotorresistor implantado por íons de discos de silício de dispositivos semicondutores |
WO2010098899A1 (en) * | 2009-02-25 | 2010-09-02 | Mallinckrodt Baker, Inc. | Multipurpose acidic, organic solvent based microelectronic cleaning composition |
CN102317995B (zh) * | 2009-03-18 | 2015-05-20 | 联合创新技术有限公司 | 有源矩阵基板和显示装置 |
CN102124414B (zh) * | 2009-04-17 | 2014-04-02 | 长瀬化成株式会社 | 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法 |
US20100317559A1 (en) * | 2009-06-15 | 2010-12-16 | Robert J. Ryther | High alkaline cleaners, cleaning systems and methods of use for cleaning zero trans fat soils |
US8518865B2 (en) * | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
SG178611A1 (en) * | 2009-09-02 | 2012-03-29 | Wako Pure Chem Ind Ltd | Processing agent composition for semiconductor surface and method for processing semiconductor surface using same |
IN2012DN02167A (no) | 2009-09-11 | 2015-08-21 | First Solar Inc | |
TWI444788B (zh) * | 2010-01-28 | 2014-07-11 | Everlight Chem Ind Corp | 顯影液之組成物 |
US9045717B2 (en) * | 2010-01-29 | 2015-06-02 | Advanced Technology Materials, Inc. | Cleaning agent for semiconductor provided with metal wiring |
KR101829399B1 (ko) * | 2010-03-04 | 2018-03-30 | 삼성전자주식회사 | 감광성 수지 제거제 조성물 및 이를 이용하는 반도체 제조 공정 |
US8058221B2 (en) * | 2010-04-06 | 2011-11-15 | Samsung Electronics Co., Ltd. | Composition for removing a photoresist and method of manufacturing semiconductor device using the composition |
US20110253171A1 (en) * | 2010-04-15 | 2011-10-20 | John Moore | Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication |
KR101169332B1 (ko) * | 2010-05-12 | 2012-07-30 | 주식회사 이엔에프테크놀로지 | 포토레지스트 박리액 조성물 |
CN102289159A (zh) * | 2010-06-18 | 2011-12-21 | 拉姆科技有限公司 | 用于除去光致抗蚀剂的组合物及利用其形成半导体图案的方法 |
SG187551A1 (en) * | 2010-07-16 | 2013-03-28 | Advanced Tech Materials | Aqueous cleaner for the removal of post-etch residues |
SG189292A1 (en) | 2010-10-06 | 2013-05-31 | Advanced Tech Materials | Composition and process for selectively etching metal nitrides |
US8889609B2 (en) | 2011-03-16 | 2014-11-18 | Air Products And Chemicals, Inc. | Cleaning formulations and method of using the cleaning formulations |
WO2012141908A1 (en) * | 2011-04-12 | 2012-10-18 | Asia Union Electronic Chemical Coporation | Low temperature deposition of silicon oxide films |
CN103782368B (zh) * | 2011-06-01 | 2017-06-09 | 安万托特性材料有限责任公司 | 对铜、钨和多孔低κ电介质具有增强的相容性的半水性聚合物移除组合物 |
US20130200040A1 (en) * | 2012-01-04 | 2013-08-08 | International Business Machines Corporation | Titanium nitride removal |
US9070625B2 (en) | 2012-01-04 | 2015-06-30 | International Business Machines Corporation | Selective etch chemistry for gate electrode materials |
WO2013123317A1 (en) * | 2012-02-15 | 2013-08-22 | Advanced Technology Materials, Inc. | Post-cmp removal using compositions and method of use |
US9570343B2 (en) | 2012-06-22 | 2017-02-14 | Avantor Performance Materials, Llc | Rinsing solution to prevent TiN pattern collapse |
CN103809394B (zh) * | 2012-11-12 | 2019-12-31 | 安集微电子科技(上海)股份有限公司 | 一种去除光阻蚀刻残留物的清洗液 |
JP2014170927A (ja) * | 2013-02-06 | 2014-09-18 | Mitsubishi Chemicals Corp | 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法 |
TWI471457B (zh) * | 2013-02-22 | 2015-02-01 | Uwin Nanotech Co Ltd | 金屬剝除添加劑、含其之組合物、及使用該組合物以剝除金屬的方法 |
KR102091543B1 (ko) * | 2013-08-01 | 2020-03-23 | 동우 화인켐 주식회사 | 망상형 고분자 용해용 조성물 |
US20150104952A1 (en) * | 2013-10-11 | 2015-04-16 | Ekc Technology, Inc. | Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper |
CN105849245B (zh) * | 2013-10-21 | 2020-03-13 | 富士胶片电子材料美国有限公司 | 用于去除表面上残余物的清洗调配物 |
KR20190035959A (ko) * | 2013-12-06 | 2019-04-03 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 표면 잔류물 제거용 세정 제형 |
CN105814183B (zh) * | 2013-12-11 | 2019-08-23 | 富士胶片电子材料美国有限公司 | 用于去除表面上的残余物的清洗调配物 |
EP3193358B1 (en) * | 2014-11-13 | 2021-03-31 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor element cleaning solution that suppresses damage to tungsten-containing materials, and method for cleaning semiconductor element using same |
US10160938B2 (en) | 2014-11-13 | 2018-12-25 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor element cleaning solution that suppresses damage to tantalum-containing materials, and cleaning method using same |
US10377978B2 (en) * | 2014-11-13 | 2019-08-13 | Mitsubishi Gas Chemical Company, Inc. | Alkaline earth metal-containing cleaning solution for cleaning semiconductor element, and method for cleaning semiconductor element using same |
US10073351B2 (en) * | 2014-12-23 | 2018-09-11 | Versum Materials Us, Llc | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation |
KR102088653B1 (ko) * | 2016-04-28 | 2020-03-13 | 후지필름 가부시키가이샤 | 처리액 및 처리액 수용체 |
JP6808730B2 (ja) * | 2016-06-03 | 2021-01-06 | 富士フイルム株式会社 | 処理液、基板洗浄方法およびレジストの除去方法 |
KR102329105B1 (ko) * | 2016-08-12 | 2021-11-18 | 인프리아 코포레이션 | 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법 |
JP7114842B2 (ja) * | 2016-10-06 | 2022-08-09 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 半導体基板の残渣を除去するための洗浄用調合物 |
CN106773563A (zh) * | 2016-12-27 | 2017-05-31 | 昆山欣谷微电子材料有限公司 | 四丙基溴化胺无水剥离液 |
JP6893562B2 (ja) * | 2017-01-17 | 2021-06-23 | インテグリス・インコーポレーテッド | 進歩したノードbeol処理のためのエッチング後残留物除去 |
US10626353B2 (en) * | 2017-02-10 | 2020-04-21 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulations |
EP3601514A4 (en) | 2017-03-24 | 2020-04-08 | Fujifilm Electronic Materials USA, Inc. | CLEANING COMPOSITIONS FOR REMOVING RESIDUES ON SEMICONDUCTOR SUBSTRATES |
CN107026120B (zh) | 2017-03-30 | 2019-07-23 | 深圳市华星光电半导体显示技术有限公司 | 一种阵列基板的制作方法 |
TWI762681B (zh) * | 2017-07-31 | 2022-05-01 | 日商三菱瓦斯化學股份有限公司 | 抑制鈷、氧化鋁、層間絕緣膜與氮化矽之損傷的組成液及利用此組成液的清洗方法 |
CN107346095B (zh) * | 2017-09-14 | 2020-12-22 | 江阴江化微电子材料股份有限公司 | 一种半导体制程正性光刻胶去胶液及应用 |
CN111448520B (zh) * | 2017-12-08 | 2023-11-17 | 汉高股份有限及两合公司 | 光刻胶剥离剂组合物 |
KR20230023820A (ko) | 2017-12-18 | 2023-02-17 | 엔테그리스, 아이엔씨. | 원자 층 증착에 의해 도포되는 내화학약품성 다층 코팅 |
US11353794B2 (en) * | 2017-12-22 | 2022-06-07 | Versum Materials Us, Llc | Photoresist stripper |
US11441109B2 (en) * | 2018-03-14 | 2022-09-13 | Mitsubishi Gas Chemical Company, Inc. | Cleaning solution for removing dry etching residue and method for manufacturing semiconductor substrate using same |
US10752867B2 (en) | 2018-03-28 | 2020-08-25 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning compositions |
CN112424327A (zh) * | 2018-07-20 | 2021-02-26 | 恩特格里斯公司 | 含腐蚀抑制剂的清洗组合物 |
US11085011B2 (en) * | 2018-08-28 | 2021-08-10 | Entegris, Inc. | Post CMP cleaning compositions for ceria particles |
JP7433293B2 (ja) | 2019-03-26 | 2024-02-19 | 富士フイルム株式会社 | 洗浄液 |
CN112805629B (zh) * | 2019-11-20 | 2022-02-15 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
CN112805630B (zh) * | 2019-11-20 | 2022-04-05 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
CN114772944B (zh) * | 2022-04-22 | 2023-06-23 | 福州大学 | 一种耐溶剂的粘附性可调控光响应表面及其制备方法 |
CN115323383B (zh) * | 2022-08-09 | 2023-10-27 | 河南大学 | 离子液体缓蚀剂改性的水滑石复合涂层的制备方法及其在镁合金防腐中的应用 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2149313A1 (de) * | 1971-10-02 | 1973-04-05 | Bayer Ag | Verfahren zur kontinuierlichen durchfuehrung chemischer reaktionen sowie eine dafuer geeignete vorrichtung |
GB1573206A (en) | 1975-11-26 | 1980-08-20 | Tokyo Shibaura Electric Co | Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices |
US4628023A (en) | 1981-04-10 | 1986-12-09 | Shipley Company Inc. | Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant |
US4374920A (en) | 1981-07-27 | 1983-02-22 | American Hoechst Corporation | Positive developer containing non-ionic surfactants |
DE3444068A1 (de) * | 1984-12-03 | 1986-06-05 | Henkel KGaA, 4000 Düsseldorf | Mittel und verfahren zum nachbehandeln gewaschener waesche |
DE3444055A1 (de) * | 1984-12-03 | 1986-06-19 | Henkel KGaA, 4000 Düsseldorf | Stabilisierte desinfektionsmittelkonzentrate |
DE3530282A1 (de) | 1985-08-24 | 1987-03-05 | Hoechst Ag | Verfahren zum entschichten von lichtgehaerteten photoresistschichten |
DE3537441A1 (de) | 1985-10-22 | 1987-04-23 | Hoechst Ag | Loesemittel zum entfernen von photoresists |
US4744834A (en) | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
JPH01120552A (ja) | 1987-11-02 | 1989-05-12 | Tama Kagaku Kogyo Kk | ポジ型フォトレジスト用現像液 |
JPH01243528A (ja) | 1988-03-25 | 1989-09-28 | Toshiba Corp | 表面処理方法 |
SU1641773A1 (ru) * | 1988-07-26 | 1991-04-15 | Белорусский технологический институт им.С.М.Кирова | Способ получени высокодисперсного диоксида кремни |
US5102777A (en) | 1990-02-01 | 1992-04-07 | Ardrox Inc. | Resist stripping |
US5091103A (en) | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
US5279771A (en) | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
EP0540261B1 (en) | 1991-10-31 | 1997-05-28 | STMicroelectronics, Inc. | Process of removing polymers in semiconductor vias |
JPH0641773A (ja) | 1992-05-18 | 1994-02-15 | Toshiba Corp | 半導体ウェーハ処理液 |
DE69333877T2 (de) | 1992-07-09 | 2006-06-14 | Ekc Technology Inc | Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält |
US5308745A (en) | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
JP3174823B2 (ja) | 1992-12-01 | 2001-06-11 | 株式会社ピュアレックス | シリコンウェーハの洗浄方法 |
JP3315749B2 (ja) | 1993-02-24 | 2002-08-19 | 日立化成工業株式会社 | 水溶性レジストの剥離方法及び剥離液 |
EP0739428B1 (en) | 1993-11-29 | 1999-10-13 | Henkel Corporation | Composition and process for treating metal |
US5419779A (en) | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
US5597983A (en) | 1994-02-03 | 1997-01-28 | Sgs-Thomson Microelectronics, Inc. | Process of removing polymers in semiconductor vias |
US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
US5498293A (en) | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
US5563119A (en) | 1995-01-26 | 1996-10-08 | Ashland Inc. | Stripping compositions containing alkanolamine compounds |
US5561105A (en) | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
WO1997005228A1 (fr) | 1995-07-27 | 1997-02-13 | Mitsubishi Chemical Corporation | Procede de traitement de la surface d'un substrat et composition de traitement de surface prevue a cet effet |
JPH09319098A (ja) | 1996-05-27 | 1997-12-12 | Rohm Co Ltd | レジスト膜用剥離液 |
TW416987B (en) | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
US6323168B1 (en) | 1996-07-03 | 2001-11-27 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
US5817610A (en) | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US5759973A (en) | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US5709756A (en) | 1996-11-05 | 1998-01-20 | Ashland Inc. | Basic stripping and cleaning composition |
US5868916A (en) * | 1997-02-12 | 1999-02-09 | Sachem, Inc. | Process for recovering organic hydroxides from waste solutions |
US5907947A (en) | 1997-11-26 | 1999-06-01 | Poole; James Terry | Safety lawn mower blade |
US6057240A (en) | 1998-04-06 | 2000-05-02 | Chartered Semiconductor Manufacturing, Ltd. | Aqueous surfactant solution method for stripping metal plasma etch deposited oxidized metal impregnated polymer residue layers from patterned metal layers |
DK1105778T3 (da) | 1998-05-18 | 2009-10-19 | Mallinckrodt Baker Inc | Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater |
JP2000089466A (ja) * | 1998-09-08 | 2000-03-31 | Fuji Photo Film Co Ltd | 感光性平版印刷版用支持体の製造方法及び平版印刷版用支持体並びに感光性平版印刷版 |
JP2001144044A (ja) * | 1999-11-11 | 2001-05-25 | Hitachi Chem Co Ltd | 金属用研磨液及びそれを用いた研磨方法 |
US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
JP2003059866A (ja) * | 2001-08-21 | 2003-02-28 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
US6793738B2 (en) * | 2002-03-28 | 2004-09-21 | General Electric Company | Method for processing acid treatment solution, solution processed thereby, and method for treating articles therewith |
JP3754986B2 (ja) * | 2002-03-29 | 2006-03-15 | 日本化学工業株式会社 | 研磨剤用組成物およびその調製方法 |
JP2006526895A (ja) * | 2003-05-02 | 2006-11-24 | イーケーシー テクノロジー,インコーポレイティド | 半導体処理におけるエッチング後の残留物の除去 |
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- 2004-10-20 BR BRPI0416067-3A patent/BRPI0416067A/pt not_active IP Right Cessation
- 2004-10-20 US US10/572,860 patent/US7671001B2/en not_active Expired - Fee Related
- 2004-10-20 KR KR1020067008202A patent/KR101132533B1/ko not_active IP Right Cessation
- 2004-10-20 SG SG200808082-2A patent/SG147482A1/en unknown
- 2004-10-20 CA CA2544198A patent/CA2544198C/en not_active Expired - Fee Related
- 2004-10-20 EP EP04817441A patent/EP1692572A2/en not_active Withdrawn
- 2004-10-20 WO PCT/US2004/034541 patent/WO2005043245A2/en active Application Filing
- 2004-10-20 JP JP2006538087A patent/JP4620680B2/ja not_active Expired - Fee Related
- 2004-10-29 TW TW093133035A patent/TWI350431B/zh not_active IP Right Cessation
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US7671001B2 (en) | 2010-03-02 |
ZA200603387B (en) | 2007-10-31 |
JP2007510307A (ja) | 2007-04-19 |
TWI350431B (en) | 2011-10-11 |
CN1875325A (zh) | 2006-12-06 |
EP1692572A2 (en) | 2006-08-23 |
TW200523690A (en) | 2005-07-16 |
CN1875325B (zh) | 2011-01-26 |
SG147482A1 (en) | 2008-11-28 |
US20070060490A1 (en) | 2007-03-15 |
BRPI0416067A (pt) | 2007-01-02 |
JP4620680B2 (ja) | 2011-01-26 |
KR20060113906A (ko) | 2006-11-03 |
KR101132533B1 (ko) | 2012-04-03 |
IL175146A0 (en) | 2006-09-05 |
WO2005043245A2 (en) | 2005-05-12 |
WO2005043245A3 (en) | 2005-08-25 |
CA2544198A1 (en) | 2005-05-12 |
CA2544198C (en) | 2011-07-26 |
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