WO2009013987A1 - 洗浄防食用組成物および半導体素子または表示素子の製造方法 - Google Patents
洗浄防食用組成物および半導体素子または表示素子の製造方法 Download PDFInfo
- Publication number
- WO2009013987A1 WO2009013987A1 PCT/JP2008/062109 JP2008062109W WO2009013987A1 WO 2009013987 A1 WO2009013987 A1 WO 2009013987A1 JP 2008062109 W JP2008062109 W JP 2008062109W WO 2009013987 A1 WO2009013987 A1 WO 2009013987A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- acid
- composition
- cleaning
- rust prevention
- semiconductor element
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title abstract 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 title abstract 3
- 230000002265 prevention Effects 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 abstract 2
- CETBSQOFQKLHHZ-UHFFFAOYSA-N Diethyl disulfide Chemical compound CCSSCC CETBSQOFQKLHHZ-UHFFFAOYSA-N 0.000 abstract 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 abstract 2
- SDXAWLJRERMRKF-UHFFFAOYSA-N 3,5-dimethyl-1h-pyrazole Chemical compound CC=1C=C(C)NN=1 SDXAWLJRERMRKF-UHFFFAOYSA-N 0.000 abstract 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 abstract 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 abstract 1
- 239000005695 Ammonium acetate Substances 0.000 abstract 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- LZAZXBXPKRULLB-UHFFFAOYSA-N Diisopropyl disulfide Chemical compound CC(C)SSC(C)C LZAZXBXPKRULLB-UHFFFAOYSA-N 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 abstract 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 abstract 1
- 235000019257 ammonium acetate Nutrition 0.000 abstract 1
- 229940043376 ammonium acetate Drugs 0.000 abstract 1
- 235000010323 ascorbic acid Nutrition 0.000 abstract 1
- 229960005070 ascorbic acid Drugs 0.000 abstract 1
- 239000011668 ascorbic acid Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000003599 detergent Substances 0.000 abstract 1
- 150000002019 disulfides Chemical class 0.000 abstract 1
- ZZGUZQXLSHSYMH-UHFFFAOYSA-N ethane-1,2-diamine;propanoic acid Chemical compound NCCN.CCC(O)=O.CCC(O)=O ZZGUZQXLSHSYMH-UHFFFAOYSA-N 0.000 abstract 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 abstract 1
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 abstract 1
- 235000006408 oxalic acid Nutrition 0.000 abstract 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 abstract 1
- 150000003217 pyrazoles Chemical class 0.000 abstract 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/103—Other heavy metals copper or alloys of copper
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
- C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Detergent Compositions (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009524437A JP5278319B2 (ja) | 2007-07-26 | 2008-07-03 | 洗浄防食用組成物および半導体素子または表示素子の製造方法 |
US12/668,695 US8802608B2 (en) | 2007-07-26 | 2008-07-03 | Composition for cleaning and rust prevention and process for producing semiconductor element or display element |
CN200880100170XA CN101755324B (zh) | 2007-07-26 | 2008-07-03 | 清洗和防腐用组合物及半导体元件或显示元件的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007194841 | 2007-07-26 | ||
JP2007-194841 | 2007-07-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009013987A1 true WO2009013987A1 (ja) | 2009-01-29 |
Family
ID=40281245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062109 WO2009013987A1 (ja) | 2007-07-26 | 2008-07-03 | 洗浄防食用組成物および半導体素子または表示素子の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8802608B2 (ja) |
JP (1) | JP5278319B2 (ja) |
KR (1) | KR20100044777A (ja) |
CN (1) | CN101755324B (ja) |
TW (1) | TWI458822B (ja) |
WO (1) | WO2009013987A1 (ja) |
Cited By (6)
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WO2014129584A1 (ja) * | 2013-02-21 | 2014-08-28 | 富士フイルム株式会社 | 酸化防止処理方法、これを用いた電子デバイスの製造方法、及びこれらに用いられる金属防食剤 |
EP2593964A4 (en) * | 2010-07-16 | 2017-12-06 | Entegris Inc. | Aqueous cleaner for the removal of post-etch residues |
WO2018174092A1 (ja) * | 2017-03-22 | 2018-09-27 | 三菱ケミカル株式会社 | 半導体デバイス用基板の洗浄液、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板 |
US10723721B2 (en) * | 2017-07-24 | 2020-07-28 | Interquim, S.A. | Process for preparing and purifying the LFA-1 antagonist lifitegrast |
CN113088410A (zh) * | 2021-03-26 | 2021-07-09 | 广州皓悦新材料科技有限公司 | 一种酰胺类水平沉铜膨松剂及其制备方法 |
JP2022093306A (ja) * | 2020-12-11 | 2022-06-23 | 東友ファインケム株式会社 | 高分子処理用工程液 |
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KR101330509B1 (ko) * | 2005-12-01 | 2013-11-15 | 미츠비시 가스 가가쿠 가부시키가이샤 | 반도체 소자 또는 표시 소자용 세정액 및 세정 방법 |
CN101755324B (zh) * | 2007-07-26 | 2011-10-12 | 三菱瓦斯化学株式会社 | 清洗和防腐用组合物及半导体元件或显示元件的制造方法 |
JP2012058273A (ja) * | 2010-09-03 | 2012-03-22 | Kanto Chem Co Inc | フォトレジスト残渣およびポリマー残渣除去液組成物 |
JP5723815B2 (ja) * | 2012-03-21 | 2015-05-27 | 富士フイルム株式会社 | 感活性光線性又は感放射線性組成物、及び、それを用いたレジスト膜、パターン形成方法、電子デバイスの製造方法、並びに電子デバイス |
JP5856991B2 (ja) * | 2012-05-21 | 2016-02-10 | 富士フイルム株式会社 | 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法 |
JP5997982B2 (ja) * | 2012-08-31 | 2016-09-28 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
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US20160118264A1 (en) * | 2013-05-02 | 2016-04-28 | Fujifilm Corporation | Etching method, etching solution used in same, etching solution kit, and method for manufacturing semiconductor substrate product |
US20140349479A1 (en) * | 2013-05-24 | 2014-11-27 | Globalfoundries Inc. | Method including a removal of a hardmask from a semiconductor structure and rinsing the semiconductor structure with an alkaline rinse solution |
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JP6313189B2 (ja) * | 2014-11-04 | 2018-04-18 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
CN107614497B (zh) | 2015-05-28 | 2021-08-03 | 艺康美国股份有限公司 | 腐蚀抑制剂 |
JP6898255B2 (ja) | 2015-05-28 | 2021-07-07 | エコラボ ユーエスエー インコーポレイティド | 2−置換イミダゾール及びベンズイミダゾール腐食抑制剤 |
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WO2019044463A1 (ja) * | 2017-08-31 | 2019-03-07 | 富士フイルム株式会社 | 処理液、キット、基板の洗浄方法 |
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- 2008-07-03 WO PCT/JP2008/062109 patent/WO2009013987A1/ja active Application Filing
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EP2593964A4 (en) * | 2010-07-16 | 2017-12-06 | Entegris Inc. | Aqueous cleaner for the removal of post-etch residues |
WO2014129584A1 (ja) * | 2013-02-21 | 2014-08-28 | 富士フイルム株式会社 | 酸化防止処理方法、これを用いた電子デバイスの製造方法、及びこれらに用いられる金属防食剤 |
JP2014185332A (ja) * | 2013-02-21 | 2014-10-02 | Fujifilm Corp | 酸化防止処理方法、これを用いた電子デバイスの製造方法、及びこれらに用いられる金属防食剤 |
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US10723721B2 (en) * | 2017-07-24 | 2020-07-28 | Interquim, S.A. | Process for preparing and purifying the LFA-1 antagonist lifitegrast |
US11286250B2 (en) | 2017-07-24 | 2022-03-29 | Interquim, S.A. | Process for preparing and purifying a LFA-1 antagonist |
JP2022093306A (ja) * | 2020-12-11 | 2022-06-23 | 東友ファインケム株式会社 | 高分子処理用工程液 |
JP7346532B2 (ja) | 2020-12-11 | 2023-09-19 | 東友ファインケム株式会社 | 高分子処理用工程液 |
CN113088410A (zh) * | 2021-03-26 | 2021-07-09 | 广州皓悦新材料科技有限公司 | 一种酰胺类水平沉铜膨松剂及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2009013987A1 (ja) | 2010-09-30 |
CN101755324B (zh) | 2011-10-12 |
JP5278319B2 (ja) | 2013-09-04 |
KR20100044777A (ko) | 2010-04-30 |
TWI458822B (zh) | 2014-11-01 |
US20100197136A1 (en) | 2010-08-05 |
TW200916573A (en) | 2009-04-16 |
US8802608B2 (en) | 2014-08-12 |
CN101755324A (zh) | 2010-06-23 |
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