KR960035754A - 정전기 고정 시스템 - Google Patents

정전기 고정 시스템 Download PDF

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KR960035754A
KR960035754A KR1019950026543A KR19950026543A KR960035754A KR 960035754 A KR960035754 A KR 960035754A KR 1019950026543 A KR1019950026543 A KR 1019950026543A KR 19950026543 A KR19950026543 A KR 19950026543A KR 960035754 A KR960035754 A KR 960035754A
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electrode
voltage
substrate
electrostatic
switch
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KR100373877B1 (ko
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샤모일리언 샤모일
버랭 매뉴쉬
에프.카메론 존
디샵팬디 샨드라
골드스피엘 알랜
노쓰럽 론
셔스팅스키 세미욘
소메크 새숀
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제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manipulator (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

기판(45)을 고정하기 위한 정전기 척(20)을 포함하는 정전기 고정 시스템(10)이 개시된다. 척(20)은 베이스(25)상에 장착되기에 적당하고, 적어도 2개의 전극(50a,50b)을 갖는 정전기 부재 (33)를 포함한다. 2개의 정전기 척(20)은 단극 모드 또는 쌍극 모드 둘 모두에서 척(20)을 동작할 수 있는 스위칭 시스템과의 연결에 사용된다.

Description

정전기 고정시스템
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 지지대상에 전압공급기 단자에 전기적접속기를 직접전기적으로 연동하기위한전기적접속부를갖으며 전극을 구성요소로 갖는 전기적접속기를 나타내는 본 발명의 정전기 척을 도시한 도, 제3도는 전극들 사이의 냉각 홈을 갖는이중 전극구조를 정전기 척의 상면도.

Claims (12)

  1. 전압 공급기를 갖는 처리 챔버내에서 기판을 고정하기 위한 정전기 고정 시스템에 있어서, 상기고정시스템은; (a) 적어도 한쌍의 전극을 포함하는 정전기 부재; 및 (b) 전극을 전압 공급기에 전기적으로 접속하는 스위치를 포함하며, 상기 스위치는(i)단극 전극으로써 전극을 동작하기 위하여 전극에 전압을 공급하기 위한 단극 위치, 및 (ii)쌍극 전극으로써 전극을 동작하기 위하여 전극에 전압을 공급하기 위한 쌍극 위치를 포함하는 것을 특징으로 하는 정전기 고정 시스템.
  2. 제1항에 있어서, 상기 스위치는 전극을 개방 회로에 접속하기 위한 개방 회로 위치를 포함하는 것을 특징으로 하는 정전기 고정 시스템.
  3. 제1항 또는 제2항에 있어서, 처리 챔버내의 상기 전압 공급기는 단일 전원을 포함하고, 단극 모드에서 상기 스위치는 전기적으로 전극을 전원에 접속하며, 쌍극 모드에서 상기 스위치는 전기적으로 적어도 하나의 전극을 접지에 접속하고 및 다른 전극을 전원에 접속하는 것을 특징으로 하는 정전기 고정 시스템.
  4. 제1,2 또는 3항에 있어서, 정전기 부재는 베이스에 의하여 지지되고, 정전기 부재내의 전극은 기판이 척상에 고정되도록 베이스를 통과하여 배치된 전기적 접속기를 통해 챔버내의 전압 공급기에 전기적으로 접속되고, 전기적 접속기들은 기판에 의하여 실제적으로 덮여지며 그에따라 부식이 감소되는 것을 특징으로 하는정전기 고정 시스템.
  5. 제1,2,3 또는 4항에 있어서, 한쌍의 전극은 전기적 절연에 의하여 다른 전극으로부터 전기적으로 연결되고, 여기서 상기 전극은 절연 공간이 기판을 냉각하기 위한 냉각제를 고정하기 위하여 냉각 홈을 형성할 수 있도록 구성되는 것을 특징으로 하는 정전기 고정 시스템.
  6. 제1항의 정전기 고정 시스템을 사용하는 방법에 있어서, 단계는; (a)정전기 부재상에 기판을 설치하는 단계; (b)플라즈마 처리 단계동안 기판을 정전기적으로 고정하기 위하여 단극위치에 스위치를 동작하는 단계; (c)단계 (b)이전 또는 이후에, 비-플라즈마 처리 단계 동안 기판을 정전기적으로 고정하기 위하여 쌍극 위치로 동작하는 단계를 포함하는 것을 특징으로 하는 정전기 고정 시스템 사용방법.
  7. 제6항에 있어서, 단극 위치에서, 제1전압은 실제로 동일한 극성을 갖는 정전기 전하가 전극에 축적되도록 전극에 공급되고, 제2전압은 반대 극성을 갖는 정전기 전하가 전극에 축적되도록 전극에 공급되는 것을 특징으로 하는 정전기 고정 시스템 사용방법.
  8. 플라즈마 또는 비-플라즈마 단계를 포함하는 처리동안 처리 챔버내에 기판을 고정하기 위한 방법에 있어서, 상기 방법은; (a)처리 챔버내에 적어도 2개의 전극을 포함하는 정전기 부재를 고정하는 단계; (b)정전기 부재상에 기판을 설치하는 단계; (c)전극이 단극 전극으로써 동작하도록 전극에 제1전압을 공급함으로써 플라즈마 처리 단계동안 정접 부재에 기판을 정전기적으로 고정하는 단계; 및 (d)단계 (c)이전 또는 이후에, 전극이 쌍극 전극으로써 동작하도록 전극에 제2전압을 공급함으로써 비-플라즈마 처리 단계동안 정전기 부재에 기판을 정전기적으로 고정하는 단계를 포함하는 것을 특징으로 하는 기판 고정 방법.
  9. 8항에 있어서, 상기 전극들은 처리의 플라즈마 및 비-플라즈마 단계사이의 천이구간동안 개방 회로 위치에 접속되는 것을 특징으로 하는 기판 고정 방법.
  10. 제8항에 있어서, 상기 3단자 스위치는 전극에 접속되고, 상기 스위치는 (i)전극에 제1전압을 제공하기 위한 단극 위치.(ii)전극에 제2관임을 제공하기 위한 쌍극 위치, 및(iii)개방회로에 전극을 접속하기 위한 개방회로 위치를 갖는 것을 특징으로 하는 기판 고정 방법.
  11. 제8항에 있어서, 상기 제1전기적 전압은 적어도 약500볼트의 직류전압, 및 더 바람직하게는 약 500볼트 내지 약5000볼트의 직류전압을 포함하는 것을 특징으로 하는 기판 고정 방법.
  12. 제8항에 있어서, 상기 제2전기적전압은;(i)하나의 전극에 공급되는 적어도 약500볼트의 직류전압, 및 전기적으로 접지된 제2전극; 또는 (ii)하나의 전극에 공급된 제1전기적 전위를 갖는 직류전압, 및 다른 전극에 공급된 제2전기적 전위를 갖는 직류전압 중 적어도 하나를 포함하는 것을 특징으로 하는 기판 고정 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950026543A 1995-03-24 1995-08-22 정전기홀딩시스템 KR100373877B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/410449 1995-03-24
US08/410,449 US5822171A (en) 1994-02-22 1995-03-24 Electrostatic chuck with improved erosion resistance

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Publication Number Publication Date
KR960035754A true KR960035754A (ko) 1996-10-24
KR100373877B1 KR100373877B1 (ko) 2003-05-09

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KR1019950026544A KR100378470B1 (ko) 1995-03-24 1995-08-22 부식을방지하는전기적접속기를가지는정전기척및형성방법
KR1019950026543A KR100373877B1 (ko) 1995-03-24 1995-08-22 정전기홀딩시스템

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US (3) US5822171A (ko)
EP (2) EP0734053A1 (ko)
JP (2) JP3989564B2 (ko)
KR (2) KR100378470B1 (ko)
DE (1) DE69502087T2 (ko)

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US5822171A (en) 1998-10-13
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US6023405A (en) 2000-02-08
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US6557248B1 (en) 2003-05-06
JPH0922937A (ja) 1997-01-21
JPH0922936A (ja) 1997-01-21
KR100378470B1 (ko) 2003-06-09
EP0734053A1 (en) 1996-09-25
EP0734052B1 (en) 1998-04-15
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DE69502087D1 (de) 1998-05-20

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