KR960015945A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR960015945A KR960015945A KR1019950034252A KR19950034252A KR960015945A KR 960015945 A KR960015945 A KR 960015945A KR 1019950034252 A KR1019950034252 A KR 1019950034252A KR 19950034252 A KR19950034252 A KR 19950034252A KR 960015945 A KR960015945 A KR 960015945A
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- KR
- South Korea
- Prior art keywords
- electrode
- semiconductor
- terminal
- semiconductor device
- input
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract 39
- 239000000463 material Substances 0.000 claims abstract 16
- 230000017525 heat dissipation Effects 0.000 claims abstract 10
- 239000004020 conductor Substances 0.000 claims 22
- 239000011347 resin Substances 0.000 claims 5
- 229920005989 resin Polymers 0.000 claims 5
- 230000000903 blocking effect Effects 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 238000001465 metallisation Methods 0.000 claims 4
- 230000005484 gravity Effects 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L23/495—Lead-frames or other flat leads
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- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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Abstract
본 발명은 신뢰성이 높은 반도체 장치를 제공하는 것을 목적으로 한다. 주면에 복수의 전극 패턴이 형성된 절연 기판의 적어도 하나의 전극 패턴상에 복수의 반도체 소자를 접합하고, 상기 반도체 소자의 전극이 상기 전극 패턴에 각각 전기적으로 접속되어, 절연 기간의 다른 면이 방열 베이스로 접합되어, 상기 방열 베이스상에 상기 반도체 소자를 외부 분위기로부더 차단하는 부제로 피복하고, 상기 절연 기판상에 전극과 상기 차단하는 부제의 밖에 설치된 전극을 전기적으로 접속한 단자를 구비한 반도체 장치에 있어서, 상기 방열 베이스 재료는 그 선팽창 계수가 반도체 소자의 선팽창 계수 이상 내지 그 계수의 3배 이내, 그 열전도가 100W/mK 이상이고, 상기 반도체 소자가 상기 절연 기판의 주면상에 적어도 하나의 전극면상에서, 다른 전극면에 의해, 적어도 2개의 영역으로 분리되어 배치된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체 장치의 외관도이고 (a)는 그 사시도, (b)는 그 상면도,
제2도의 (a)는 본 발명의 반도체 장치의 내부 구조도,(b)는 그 단자 상세도.
Claims (41)
- 주면에 복수의 전극 패턴이 형성된 절연 기판의 적어도 1개의 전극 패턴상에 복수의 반도체 소자가 접합되고, 상기 반도체 소자의 전극이 상기 전극 패턴에 각각 전기적으로 접속되고, 절연 기판의 다른 면이 방열베이스에 접합되고, 상기 방열 베이스상에 상기 반도체 소자를 외부 분위기로부터 차단하는 부제로 피복하고, 상기 절연 기판상에 전극과 상기 차단하는 부제의 외부에 설치된 전극을 전기적으로 접속한 단자를 구비한 반도체 장치에 있어서, 상기 방열 베이스 제료는 그 선팽창 계수가 반도체 소자의 선팽창 계수 이상 내지 그 계수의 3배 이내, 그 열전도도가 100W/mK 이상이고, 상기 반도체 소자가 상기 절연 기판의 주면상에 적어도 1개의 전극면상에서 다른 전극면에 의해 적어도 2개의 영역으로 분리되어 배치된 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 차단하는 부제내에서 상기 복수의 반도체 소자, 절연기판의 주면, 및 방렬 베이스 상부가 겔상의 물질로 코팅되며, 그 겔상 물질의 표면은 실질적으로 공간으로 이루어진 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 전극 단자가 접속되는 절연 기판상에 전극 패턴부와 상기 절연 기판 사이에 공간이 설치되는 한편, 그 공간의 상기 절연 기판에의 투영면적으로 포함하도록 절연 기판측에 금속 패턴이 형성되며, 상기 전극 패턴과 동전위로 이루어진 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 절연 기관이 그 기판내에 그 주면에 형성된 주전류 전극 패턴과 동전위로 하고, 단부면이 노출되지 않는 적어도 1개의 내층 전극 패턴을 구비하는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 주전류 전극과 그 전극에 대응하는 절연 기판상의 전극 사이에, 선팽창 계수가 방열 베이스 재료의 선팽창 계수에 가까운 중간 부제룰 삽입한 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 적어도 1개의 단자에 있어서, 상기 전극 단자가 접속되는 단자의 단부와 그 단자에 대응된 절연 기판상의 전극 패턴 단부와의 거리가, 단자를 구성하는 부제의 판 두께와 상기 전극 패턴의 판 두께의 합이 실질적으로 2배 이상인 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 주전류 외부 전극 배치를 반도체 장치의 단축(端軸)방향으로 평행하게 배열한 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 방열 베이스에 형성된 상기 장치를 외부 냉각판에 설치하기 위한 홀에 설치를 위한 볼트의 선팽창 계수와 실질적으로 같은 재료로 이루어지는 칼라부가 설치된 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 2개의 주전류 전극 단자를 겔상의 물질내에서 서로 십자로, 높이 방향으로 스페이서를 마련하여 배치하고, 겔상의 물질 내에서 외부 전극까지의 입상부를 서로 평행하게 배치한 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 입력 단자에 직렬로 저항을 접속하는 보조 단자를 설치한 것을 특징으로 하는 반도체 장치.
- 제2항에 있어서, 상기 겔상의 물질 표면 공간의 단자를 상기 차단하는 부제와 동둥한 물질로 피복한 것을 특징으로 하는 반도체 장치.
- 제2항에 있어서, 상기 단자를 구성하는 부제와 다른 상기 차단하는 부제 사이를 하드 레진으로 결합한것을 특징으로 하는 반도체 장치.
- 제2항에 있어서, 상기 차단하는 부제와 단자를 일제 성형 또는 하드 레진 결합한 것을 특징으로 하는 반도체 장치.
- 주면에 복수의 전극 패턴이 형성된 절연 기판의 적어도 하나의 전극 패턴상에 복수의 반도체 소자가 접합되고, 상기 반도체 소자의 전극이 상기 전극 패턴에 각각 전기적으로 접속되고, 절연 기판의 다른 면이 방열 베이스에 접합되고, 상기 방열 베이스상에 상기 반도체 소자를 외부 분위기로부터 차단하는 부제로 피복하고, 상기 절연 기판상에 전극과 상기 차단하는 부제의 외부에 설치된 전극을 전기적으로 접속한 단자를 구비한 반도체 장치에 있어서, 상기 반도체 소자가 상기 절연 기판의 주면상에 적어도 1개의 전극면상에서 다른 전극면에 의해 적어도 2개의 영역으로 분리되어 배치되고, 차단하는 부제내에서 적어도 반도체 소자, 절연기판의 주면, 방열 베이스 표면이 겔상의 물질로 코팅되고, 그 겔상의 물질 적은 실질적으로 공간으로 이루어진 것을 특징으로 하는 반도체 장치.
- 제14항에 있어서, 상기 전극 단자가 접속되는 절연 기판상에 전극 패턴부와 상기 절연 기판 사이에 공간이 마련되는 한편, 그 공간의 상기 절연 기판에의 투영면적으로 포함하도록 절연 기판측에 금속 패턴이 형성되고, 상기 전극 패턴과 동전위로 이루어진 것을 특징으로 하는 반도체 장치.
- 제14항에 있어서, 절연 기판이 그 기판내에 그 주면에 형성된 주전류 전극 패턴과 동전위로 하고, 단부면이 노출되지 않는 적어도 1개의 내층 전극 패턴을 구비한 것을 특징으로 하는 반도체 장치.
- 제14항에 있어서, 적어도 1개의 단자에 있어서, 상기 전극 단자가 접속되는 단자의 단부와 그 단자에 대응된 절연 기판상의 전극 패턴 단부와의 거리가 단자를 구성하는 부제의 단 두께와 상기 전극 패턴의 단 두께의 합이 실질적으로 2배 이상인 것을 특징으로 하는 반도체 장치.
- 제14에 있어서, 주전류 외부 전극 배치를 반도체 장치의 단축 방향으로 평행하게 배열한 것 특징으로 하는 반도체 장치.
- 제l4항에 있어서, 2개의 주전류 전극 단자를 겔상의 물질내에서 서로 십자로, 높이 방향으로 스페이스를 마련하여 배치하고, 겔상의 물질 내에서 외부 전극까지의 입상부를 서로 평행하게 배치한 반도체 장치.
- 제14항에 있어서, 입력 단자에 직렬로 저항을 접속하는 보조 단자를 설치한 것을 특징으로 하는반도체 장치.
- 제14항에 있어서, 상기 겔상의 물질 표면 공간의 단자를 상기 차단하는 부제와 동등한 물질로 피복한 것을 특징으로 하는 반도체 장치.
- 제14항에 있어서, 단자를 구성하는 부제와 다른 상기 차단하는 부제 사이를 하드 레진으로 결합한 것을 특징으로 하는 반도체 장치.
- 제14항에 있어서, 상기 차단하는 부제와 단자를 일제 성형 또는 하드 레진 결합한 것을 특징으로 하는 반도체 장치.
- 제1항에 기제된 반도체 장치를 이용하는 것을 특징으로 하는 전력용 인버터 장치.
- 절연막과, 절연판의 한 표면상에 설치하는 제1도전층과, 절연판의 제l도전층에 대향하는 위치에 설치하는 제2도전층과, 제1도전층과 제2도전층을 전기적으로 접속하는 도전에를 구비하는 것을 특징으로 하는 회로기판.
- 제25항에 있어서, 상기 제1도전층과 상기 제2도전층과의 사이에 끼우는 유전체를 구비하는 것을 특징으로 하는 회로 기판.
- 제25항에 있어서, 상기 제2도전층 단부의 위치가 상기 제1도전충 단부의 위치 혹은 상기 제1도전층 단부와 상기 절연판 단부와의 사이의 위치에 존제하는 것을 특징으로 하는 회로 기판.
- 제25항에 있어서, 상기 제2도전층이 텅스텐의 메탈라이즈층, 몰리브덴과 망간을 포함하는 메탈라이즈층, 텅스텐의 메탈라이즈층에 도금을 실시한 층, 몰리브덴과 망간을 포함하는 메탈라이즈층 중 어느 하나를 포함하는 것을 특징으로 하는 회로 기판.
- 절연판과, 절연판의 한 표면상에 설치하는 제1도전층과, 절연판의 제1도전층으로부터 격리하여 설치하는 제2도전층과, 제1도전층과 제2도전층을 전기적으로 접속하는 도전체를 구비하는 것을 특징으로 하는 회로기판.
- 절연판과, 절연판의 표면상에 위치하는 도전체층과, 절연판과 도전체층과의 사이의 공간부에 설치되는 유전제층을 구비하고, 유전제층의 비유전율 & 절연판의 비유전율εb, 공간부의 두께 L & 및 절연판의 두께 Lb의 사이에, ε.≥다×(L↙Lb)라는 관계를 갖는 것을 특징으로 하는 회로 기판.
- 동종의 반도체 소자가 복수 탑제되어 있는 반도체 모듈에 있어서, 절연제로 형성된 기판과, 상기 절연기판상에 배치되는 복수의 상기 반도체 소자와, 외부 기기와 전기적으로 접속되는 외부절연 기판상에 형성되고, 상기 외부 접속 단자가 접합됨과 동시에 복수의 상기 반도체 소자의 전극과 전기적으로 병렬 접속되고, 상기 외부 접속 단자로부터 복수의 상기 반도체 소자의 전극까지의 전류 경로로 이루어지는 도체 패턴을 구비하고, 상기 도체 패턴은 상기 절연 기판의 특정한 가상선을 중심으로 하여 대상으로 형성되어 있음과 동시에, 상기 가상선상 또는 상기 가상선을 중심으로 하여 대상인 복수의 위치가 상기 외부 접속 단자의 접합 영역으로 이루어지고, 복수의 상기 반도체 소자 중, 각각의 전극으로부터 상기 접합 영역까지의 거리(하나의 반도체 소자에 복수이 전극이 있는 경우 또는 일정한 넓이를 갖는 전극이 있는 경우에는 상기 접합 영역까지의 평균 거리)가 다른 반도체 소자보다도 짧아지는 반도체 소자와 상기 접합 영역과의 사이가 절단되고, 이 사이를 흐르는 전류를 우회시켜 복수의 상기 반도체 소자마다의 각 전류 경로의 길이를 거의 같게하는 전류 우회부가 형성되어 있는 것을 특징으로 하는 반도체 모듈.
- 제31항에 있어서, 동종의 상기 반도체 소자가 3개 탑제되고, 3개의 상기 반도체 소자 중, 1개의 특정반도체 소자는 그 무게 중심이 상기 가상선상에 위치하도록 배치되고, 나머지 2개의 반도체 소자는 각각의 무게 중심이 상기 가상선을 중심으로 하여 대칭을 이루고 또한 상기 특정 반도체 소자의 무게 중심을 정점을하는 이둥변 삼각형의 저각(底角)의 각에 위치하도록 배치되어 있는 것을 특징으로 하는 반도체 모듈.
- 동종의 반도체 소자가 복수 탑제되어 있는 반도체 모듈에 있어서, 절연체로 형성된 기판과, 상기 절연기판상에 배치되는 복수의 상기 반도체 소자와, 외부 기기와 전기적으로 접속되는 외부 접속 단자와, 상기 절연 기판상에 형성되고, 상기 외부 접속 단자가 접합됨과 동시에 복수의 상기 반도체 소자의 전극과 전기적으로 병렬 접속되며, 상기 외부 접속 단자로부터 복수의 상기 반도체 소자의 전극까지의 전류 경로로 이루어지는 도체 패턴을 구비하고, 상기 외부 접속 단자는 상기 도체 패턴상에서 복수의 상기 반도체 소자마다의 각 전류 경로로 이루어지는 영역과 평행이고, 또한 대향하고, 각 전류 경로를 흐르는 전류의 방향과 역방향의 전류가 흐르는 대향부를 구비하고 있는 것을 특징으로 하는 반도체 모듈.
- 제33항에 있어서, 복수의 상기 반도체 소자는 상기 기판상에 직선상으로 배치되고, 상기 도체 패턴은 직선상에 배치된 복수의 상기 반도체 소자 중, 한쪽 단부의 반도체 소자로부터 다른쪽 단부의 반도체 소자까지 의 사이에서 복수의 상기 반도체 소자에 연하여 형성되고, 상기 외부 접속 단자는 상기 도체 패턴의 상기 한쪽의 반도체 소자측 부분에 접합되고, 상기 대향부가 복수의 상기 반도체 소자가 나란한 방향에서, 상기 한쪽 반도체 소자의 위치에 해당하는 위치로부터 상기 다른쪽 단부의 반도체 소자의 위치에 해당하는 위치까지 신장되어 있는 것을 특징으로 하는 반도체 모듈.
- 제31항에 있어서, 복수의 상기 반도체 소자는 상기 전극으로서, 각각에 전류가 유입되는 입력 전극과 전류가 유출되는 출력 전극을 구비하고, 상기 외부 접속 단자로서 외부 기기로부터 전류가 유입되는 입력측 접속 단자와, 외부 기기에 전류가 유출되는 출력측 접속 단자를 구비하고. 상기 도체 패턴으로서, 상기 입력측 접속 단자가 접합됨과 동시에 복수의 상기 반도체 소자의 입력 전극과 전기적으로 병렬 접속되는 입력측 도체패턴과, 상기 출력측 접속 단자가 접합됨과 동시에 복수의 반도체 소자의 상기 출력 전극과 전기적으로 병렬로 접속되는 출력측 도체 패턴을 구비하고, 상기 입력측 접속 단자 및 상기 출력측 접속 단자를 일정한 간격으로 서로 대향하고 또한 평행한 입출력 대향부를 갖는 것을 특징으로 하는 반도체 모듈.
- 제35항에 있어서, 상기 입력측 접속 단자의 상기 입출력 대향부와 상기 입출력 접속 단자와 상기 입출력 대향부와의 간격은 10㎜ 이하인 것을 특징으로 하는 반도체 모듈.
- 제31항에 있어서, 복수의 상기 반도체 소자는 바이폴라 트랜지스터이고, 각각에 전류가 유입되는 입력 전극과, 전류가 유출되는 출력 전극과, 상기 입력 전극으로부터 상기 출력 전극으로 유출되는 전류량을 제어하기 위한 전압이 걸리는 제어 전극을 구비하고, 상기 외부 접속 단자로서, 외부 기기로부터의 전류가 유입되는 입력측 접속 단자와, 외부 기기로 전류가 유출되는 출력측 접속 단자와, 외부 기기로부터의 전압이 걸리는 제어 접속 단자를 구비하고, 상기 도체 패턴으로서, 상기 입력측 접속 단자가 접합됨과 동시에 복수의 상기 반도체 소자의 입력 전극과 전기적으로 병렬 접속되는 입력측 도체 패턴과, 상기 출력측 접속 단자가 접합됨과 동시에 복수의 반도체 소자의 상기 출력 전극과 전기적으로 병렬 접속되는 출력측 도체 패턴과, 상기 제어 접속 단자가 접합됨과 동시에 복수의 상기 반도체 소자의 상기 제어 전극과 전기적으로 병렬 접속되는 제어 도체 패턴을 구비하고, 상기 제어 접속 단자는 상기 입력측 접속 단자 및 상기 출력측 접속 단자와 교차하지 않고 또한, 상기 입력측 접속 단자와 상기 출력측 접속 단자와의 사이의 거리보다도 양 접속 단자까지의 거리가 커지게 되도록 형성되어 있음과 동시에 배치되어 있는 것을 특징으로 하는 반도체 모듈.
- 제37항에 있어서, 전류가 유입되는 입력 전극과 전류가 유출되는 출력 전극을 갖는 다이오드 소자를 구비하고, 상기 다이오드 소자의 입력 전극은 상기 입력을 도체 패턴과 전기적으로 접속되고, 상기 다이오드 소자의 출력 전극은 상기 출력측 도체 패턴과 전기적으로 접속되고, 상기 입력측 도체 패턴상의 상기 입력측 접속 단자의 접합 영역은 상기 접합 영역으로부터 상기 바이폴라 트랜지스터의 상기 입력 전극까지의 전류 경로 길이보다 상기 접합 영역으로부더 상기 다이오드 소자의 입력 전극까지의 전류류 경로 길이의 쪽이 짧아지는 위치에 존제하는 것을 특징으로 하는 반도체 모듈.
- 제31항에 있어서, 상기 외부 접속 단자는 일정 방향으로 연장된 후, 그 단부로부터 상기 일정 방향과는 역방향으로 연장되는 곡절부를 구비하고 있는 것을 특징으로 하는 반도체 모듈.
- 제39항에 있어서, 상기 도체 패턴과 상기 반도체 소자의 전극을 접속하는 금속 와이어를 구비하고, 상기 외부 접속 단자의 상기 곡절부는 상기 금속 와이어와 상하로 중첩되지 않도록 형성되어 있는 것을 특징으로 하는 반도체 모듈.
- 제31항에 있어서, 상기 절연 기판의 상기 반도체 소자 및 상기 도체 패턴이 배치되는 측에 공간이 형성되도록 상기 절연 기판을 피복하는 케이싱과, 상기 케이싱의 상기 공간내에 충전되는 실리콘 겔을 구비하고, 상기 실리콘 겔은 상기 케이싱의 상기 공간내에 공기층이 형성되도록 상기 공간내에 충전되어 있는 것을 특징으로 하는 반도체 모듈.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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JP06243654A JP3129113B2 (ja) | 1994-10-07 | 1994-10-07 | 半導体電流制御装置 |
JP94-243654 | 1994-10-07 | ||
JP94-326640 | 1994-12-28 | ||
JP94-326633 | 1994-12-28 | ||
JP6326633A JPH08186193A (ja) | 1994-12-28 | 1994-12-28 | 回路基板及びそれを用いた半導体装置 |
JP32664094A JP3250399B2 (ja) | 1994-12-28 | 1994-12-28 | 回路基板及び半導体装置 |
JP00281895A JP3222341B2 (ja) | 1995-01-11 | 1995-01-11 | 半導体モジュール |
JP95-002818 | 1995-01-11 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002183A (en) * | 1995-05-04 | 1999-12-14 | Iversen; Arthur H. | Power semiconductor packaging |
US5956231A (en) * | 1994-10-07 | 1999-09-21 | Hitachi, Ltd. | Semiconductor device having power semiconductor elements |
DE69726518T2 (de) * | 1996-09-06 | 2004-10-07 | Hitachi Ltd | Leistungshalbleiteranordnung in modularer Bauart |
JP3533317B2 (ja) * | 1997-08-28 | 2004-05-31 | 株式会社東芝 | 圧接型半導体装置 |
CN1146988C (zh) * | 1997-12-08 | 2004-04-21 | 东芝株式会社 | 半导体功率器件的封装及其组装方法 |
EP0924845A3 (en) * | 1997-12-22 | 2001-05-23 | Omnirel LLC | Power semiconductor module |
JP2000082774A (ja) * | 1998-06-30 | 2000-03-21 | Sumitomo Electric Ind Ltd | パワ―モジュ―ル用基板およびその基板を用いたパワ―モジュ―ル |
JP2000183249A (ja) * | 1998-12-11 | 2000-06-30 | Mitsubishi Electric Corp | パワー半導体モジュール |
JP4220094B2 (ja) * | 1999-04-05 | 2009-02-04 | 三菱電機株式会社 | パワー半導体モジュール |
JP3695260B2 (ja) * | 1999-11-04 | 2005-09-14 | 株式会社日立製作所 | 半導体モジュール |
JP2001310720A (ja) * | 2000-04-28 | 2001-11-06 | Denso Corp | 負荷駆動回路 |
US6552429B2 (en) * | 2000-08-28 | 2003-04-22 | Mitsubishi Denki Kabushiki Kaisha | Power switching semiconductor device with suppressed oscillation |
US6845017B2 (en) * | 2000-09-20 | 2005-01-18 | Ballard Power Systems Corporation | Substrate-level DC bus design to reduce module inductance |
US7012810B2 (en) * | 2000-09-20 | 2006-03-14 | Ballard Power Systems Corporation | Leadframe-based module DC bus design to reduce module inductance |
CA2425111C (en) | 2000-11-03 | 2010-06-01 | Smc Electrical Products, Inc. | Microdrive |
EP1404224A1 (en) * | 2001-06-28 | 2004-04-07 | Koninklijke Philips Electronics N.V. | Medical x-ray device and power module therefor |
DE10237561C1 (de) * | 2002-08-16 | 2003-10-16 | Semikron Elektronik Gmbh | Induktivitätsarme Schaltungsanordnung bzw. Schaltungsaufbau für Leistungshalbleitermodule |
JP4057407B2 (ja) * | 2002-12-12 | 2008-03-05 | 三菱電機株式会社 | 半導体パワーモジュール |
EP1465250A1 (en) * | 2003-04-02 | 2004-10-06 | Abb Research Ltd. | Insulated power semiconductor module with reduced partial discharge and manufacturing method |
US7505294B2 (en) * | 2003-05-16 | 2009-03-17 | Continental Automotive Systems Us, Inc. | Tri-level inverter |
US6987670B2 (en) * | 2003-05-16 | 2006-01-17 | Ballard Power Systems Corporation | Dual power module power system architecture |
US7443692B2 (en) * | 2003-05-16 | 2008-10-28 | Continental Automotive Systems Us, Inc. | Power converter architecture employing at least one capacitor across a DC bus |
US6906404B2 (en) * | 2003-05-16 | 2005-06-14 | Ballard Power Systems Corporation | Power module with voltage overshoot limiting |
US7154196B2 (en) * | 2003-07-09 | 2006-12-26 | Motorola, Inc. | Printed circuit board for a three-phase power device having embedded directional impedance control channels |
JP2005094842A (ja) * | 2003-09-12 | 2005-04-07 | Toshiba Corp | インバータ装置及びその製造方法 |
JP4081611B2 (ja) * | 2003-11-19 | 2008-04-30 | 株式会社豊田自動織機 | 半導体装置 |
US20050128706A1 (en) * | 2003-12-16 | 2005-06-16 | Ballard Power Systems Corporation | Power module with heat exchange |
US7301755B2 (en) * | 2003-12-17 | 2007-11-27 | Siemens Vdo Automotive Corporation | Architecture for power modules such as power inverters |
JP4575034B2 (ja) * | 2004-06-03 | 2010-11-04 | 株式会社東芝 | インバータ装置 |
US7289329B2 (en) * | 2004-06-04 | 2007-10-30 | Siemens Vdo Automotive Corporation | Integration of planar transformer and/or planar inductor with power switches in power converter |
US7295448B2 (en) * | 2004-06-04 | 2007-11-13 | Siemens Vdo Automotive Corporation | Interleaved power converter |
US7180763B2 (en) * | 2004-09-21 | 2007-02-20 | Ballard Power Systems Corporation | Power converter |
JP4271112B2 (ja) * | 2004-09-21 | 2009-06-03 | 株式会社東芝 | 半導体装置 |
JP4453498B2 (ja) * | 2004-09-22 | 2010-04-21 | 富士電機システムズ株式会社 | パワー半導体モジュールおよびその製造方法 |
DE102004046806B4 (de) * | 2004-09-27 | 2009-07-09 | Infineon Technologies Ag | Leistungshalbleitermodul |
EP1805880A2 (en) * | 2004-10-20 | 2007-07-11 | Ballard Power Systems Corporation | Power system method and apparatus |
DE102004061908B4 (de) * | 2004-12-22 | 2009-07-30 | Siemens Ag | Verfahren zum Herstellen einer Schaltungsanordnung auf einem Substrat |
DE102005007373B4 (de) | 2005-02-17 | 2013-05-29 | Infineon Technologies Ag | Leistungshalbleiterbaugruppe |
DE102005063532B3 (de) | 2005-02-17 | 2022-03-10 | Infineon Technologies Ag | Leistungshalbleiterbaugruppe |
JP2006253516A (ja) * | 2005-03-14 | 2006-09-21 | Hitachi Ltd | パワー半導体装置 |
EP1897214A2 (en) * | 2005-06-30 | 2008-03-12 | Siemens VDO Automotive Corporation | Controller method, apparatus and article suitable for electric drive |
GB2433354A (en) * | 2005-12-14 | 2007-06-20 | Goodrich Control Sys Ltd | Electrical contact arrangement |
JP4470879B2 (ja) * | 2005-12-26 | 2010-06-02 | 株式会社デンソー | 車両用発電機の発電制御装置 |
DE102006014582B4 (de) * | 2006-03-29 | 2011-09-15 | Infineon Technologies Ag | Halbleitermodul |
US8198712B2 (en) * | 2006-06-07 | 2012-06-12 | International Rectifier Corporation | Hermetically sealed semiconductor device module |
US8129836B2 (en) | 2006-06-09 | 2012-03-06 | Honda Motor Co., Ltd. | Semiconductor device |
JP4829690B2 (ja) * | 2006-06-09 | 2011-12-07 | 本田技研工業株式会社 | 半導体装置 |
US7593235B2 (en) * | 2006-07-20 | 2009-09-22 | Power Integrations, Inc. | Thermal conduit |
US20090115052A1 (en) * | 2007-05-25 | 2009-05-07 | Astralux, Inc. | Hybrid silicon/non-silicon electronic device with heat spreader |
JP4567029B2 (ja) * | 2007-06-22 | 2010-10-20 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
US20090052134A1 (en) * | 2007-08-22 | 2009-02-26 | Casteel Jordan B | Liquid-cooled grounded heatsink for diode rectifier system |
US7773381B2 (en) | 2007-09-26 | 2010-08-10 | Rohm Co., Ltd. | Semiconductor device |
JP2009239261A (ja) * | 2008-03-07 | 2009-10-15 | Panasonic Corp | 電子ユニット、電子装置 |
WO2009148168A1 (ja) | 2008-06-06 | 2009-12-10 | 三菱マテリアル株式会社 | パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法 |
JP4666185B2 (ja) * | 2008-06-26 | 2011-04-06 | 三菱電機株式会社 | 半導体装置 |
US8411451B2 (en) * | 2008-07-30 | 2013-04-02 | Panasonic Corporation | Power line communication apparatus |
JP5002568B2 (ja) * | 2008-10-29 | 2012-08-15 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
US7898807B2 (en) * | 2009-03-09 | 2011-03-01 | General Electric Company | Methods for making millichannel substrate, and cooling device and apparatus using the substrate |
DE102009035819A1 (de) * | 2009-08-01 | 2011-02-03 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit stromsymmetrischem Lastanschlusselement |
KR20120073302A (ko) * | 2009-09-28 | 2012-07-04 | 에이비비 테크놀로지 아게 | 회로 장치 및 그의 제조 방법 |
JP2013511849A (ja) * | 2009-11-18 | 2013-04-04 | モレックス インコーポレイテド | 空気孔を備えた回路基板 |
TWI377465B (en) * | 2010-03-11 | 2012-11-21 | Delta Electronics Inc | Heat dissipating module and electronic device using such heat dissipating module |
JP5212417B2 (ja) | 2010-04-12 | 2013-06-19 | 三菱電機株式会社 | パワー半導体モジュール |
US8482904B2 (en) * | 2010-05-25 | 2013-07-09 | Lear Corporation | Power module with current sensing |
JP5380376B2 (ja) * | 2010-06-21 | 2014-01-08 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
US8878483B2 (en) | 2011-01-14 | 2014-11-04 | Lear Corporation | Electronics unit with current sensing |
JP5555206B2 (ja) * | 2011-07-11 | 2014-07-23 | 株式会社 日立パワーデバイス | 半導体パワーモジュール |
JP5338932B2 (ja) * | 2011-07-26 | 2013-11-13 | 株式会社デンソー | 電力変換装置 |
KR101301387B1 (ko) * | 2011-09-16 | 2013-08-28 | 삼성전기주식회사 | 전력 반도체 모듈 |
JP2013069746A (ja) * | 2011-09-21 | 2013-04-18 | Toshiba Corp | 半導体装置および電極端子 |
CN102364676B (zh) * | 2011-11-30 | 2013-10-30 | 江苏宏微科技有限公司 | 半导体功率模块封装外壳结构 |
CN103988297B (zh) * | 2011-12-12 | 2018-11-23 | 三菱综合材料株式会社 | 功率模块及其制造方法 |
JP5705099B2 (ja) | 2011-12-16 | 2015-04-22 | 三菱電機株式会社 | 半導体スイッチング装置 |
ES2551427T3 (es) | 2012-02-06 | 2015-11-19 | William L. Pridgen | Combinación de famciclovir y celecoxib para síndromes somáticos funcionales |
WO2013118415A1 (ja) * | 2012-02-09 | 2013-08-15 | 富士電機株式会社 | 半導体装置 |
DE102012211952B4 (de) * | 2012-07-09 | 2019-04-25 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit mindestens einem stressreduzierenden Anpasselement |
KR101642754B1 (ko) * | 2012-08-24 | 2016-07-26 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 |
JP6057734B2 (ja) * | 2013-01-18 | 2017-01-11 | 三菱電機株式会社 | 電力変換装置 |
JP6102297B2 (ja) * | 2013-02-06 | 2017-03-29 | 富士電機株式会社 | 半導体装置 |
DE112013007243B4 (de) | 2013-07-16 | 2023-10-05 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
CN104347554A (zh) * | 2013-07-23 | 2015-02-11 | 西安永电电气有限责任公司 | 电力半导体器件用电极 |
US10770371B2 (en) * | 2014-07-09 | 2020-09-08 | Mitsubishi Electric Corporation | Semiconductor device |
DE102014116662B4 (de) * | 2014-11-14 | 2018-03-08 | Infineon Technologies Ag | Elektrische anschlussbaugruppe, halbleitermodul und verfahren zurherstellung eines halbleitermoduls |
WO2016084622A1 (ja) * | 2014-11-28 | 2016-06-02 | 富士電機株式会社 | 半導体装置 |
JP2016116328A (ja) * | 2014-12-15 | 2016-06-23 | 富士電機株式会社 | 電力変換装置の冷却装置 |
WO2017006916A1 (ja) * | 2015-07-08 | 2017-01-12 | 国立研究開発法人産業技術総合研究所 | 半導体装置及び半導体装置の製造方法 |
JP6613806B2 (ja) * | 2015-10-23 | 2019-12-04 | 富士電機株式会社 | 半導体装置 |
KR102059610B1 (ko) * | 2015-12-18 | 2019-12-26 | 주식회사 엘지화학 | 고전도성 방열 패드를 이용한 인쇄회로기판의 방열 시스템 |
CN105789192B (zh) * | 2016-05-03 | 2018-11-30 | 扬州国扬电子有限公司 | 一种设有电极大臂的功率模块 |
CN105810658B (zh) * | 2016-05-03 | 2018-07-20 | 扬州国扬电子有限公司 | 一种电极叠层引出的三电平功率模块 |
CN105789160B (zh) * | 2016-05-03 | 2017-05-24 | 扬州国扬电子有限公司 | 一种组合式电极及其三电平大功率模块 |
CN105810653B (zh) * | 2016-05-03 | 2018-09-28 | 扬州国扬电子有限公司 | 一种设有可共用电极大臂的功率模块 |
JP6515886B2 (ja) | 2016-07-08 | 2019-05-22 | 株式会社豊田自動織機 | 半導体モジュール |
CN109661861B (zh) * | 2016-09-06 | 2023-05-26 | 三洋电机株式会社 | 开关装置 |
US10021802B2 (en) | 2016-09-19 | 2018-07-10 | General Electric Company | Electronic module assembly having low loop inductance |
DE102016219116A1 (de) * | 2016-09-30 | 2018-04-05 | Robert Bosch Gmbh | Verfahren zum Herstellen einer elektronischen Baugruppe und elektronische Baugruppe, insbesondere für ein Getriebesteuermodul |
US10541625B2 (en) * | 2016-12-22 | 2020-01-21 | Mitsubishi Electric Corporation | Power conversion device |
US11043465B2 (en) * | 2017-05-11 | 2021-06-22 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
DE102017217150A1 (de) * | 2017-09-27 | 2019-03-28 | Siemens Aktiengesellschaft | Hochspannungsgerät mit keramischen Abstandselementen und dessen Verwendung |
CN112204729A (zh) * | 2018-06-06 | 2021-01-08 | 三菱电机株式会社 | 半导体装置以及电力变换装置 |
CN111418049B (zh) * | 2018-06-06 | 2023-12-08 | 富士电机株式会社 | 半导体装置 |
JP2020013908A (ja) | 2018-07-18 | 2020-01-23 | 住友電工デバイス・イノベーション株式会社 | 電子部品の実装構造 |
CN109093649B (zh) * | 2018-08-31 | 2021-04-30 | 蔡德秀 | 一种搬运机器人的散热装置 |
JP7172326B2 (ja) * | 2018-09-14 | 2022-11-16 | 富士電機株式会社 | 半導体ユニット、半導体モジュール及び半導体装置 |
JP7215265B2 (ja) | 2019-03-19 | 2023-01-31 | 富士電機株式会社 | 半導体ユニット、半導体モジュール及び半導体装置 |
JP7238565B2 (ja) * | 2019-04-12 | 2023-03-14 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
CN113366634A (zh) | 2019-08-13 | 2021-09-07 | 富士电机株式会社 | 半导体装置 |
JP7160012B2 (ja) * | 2019-10-03 | 2022-10-25 | 株式会社デンソー | 電子制御装置 |
DE102020216506A1 (de) | 2020-12-22 | 2022-06-23 | Zf Friedrichshafen Ag | Halbbrücke mit einer U- oder V-förmigen Anordnung von Halbleiterschaltelementen für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Leistungsmodul für einen Inverter und Inverter |
CN113271749A (zh) * | 2021-04-01 | 2021-08-17 | 王启腾 | 一种复合导热pcb线路板 |
EP4239660A1 (en) | 2022-03-03 | 2023-09-06 | Hitachi Energy Switzerland AG | Method of attaching a terminal to a metal substrate structure for a semiconductor power module and semiconductor power module |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3144704A (en) * | 1962-07-02 | 1964-08-18 | Ibm | Method of making couplings to super-conductor circuits |
US4278990A (en) * | 1979-03-19 | 1981-07-14 | General Electric Company | Low thermal resistance, low stress semiconductor package |
JPS5931044A (ja) * | 1982-08-12 | 1984-02-18 | Mitsubishi Electric Corp | 半導体装置 |
JPS6074655A (ja) * | 1983-09-30 | 1985-04-26 | Fuji Electric Co Ltd | 半導体装置 |
US4819042A (en) * | 1983-10-31 | 1989-04-04 | Kaufman Lance R | Isolated package for multiple semiconductor power components |
JPS6148945A (ja) * | 1984-08-16 | 1986-03-10 | Toshiba Corp | ハイプリツドicモジユ−ル |
JPS6254944A (ja) * | 1985-09-03 | 1987-03-10 | Mitsubishi Electric Corp | 密閉構造形半導体樹脂容器 |
JPS62160746A (ja) * | 1986-01-10 | 1987-07-16 | Fuji Electric Co Ltd | 半導体素子 |
US4907068A (en) * | 1987-01-21 | 1990-03-06 | Siemens Aktiengesellschaft | Semiconductor arrangement having at least one semiconductor body |
JPH0652831B2 (ja) * | 1987-09-30 | 1994-07-06 | 株式会社日立製作所 | 自動車用電子回路装置の密封構造 |
JPH01237333A (ja) * | 1987-10-27 | 1989-09-21 | Japan Electron Control Syst Co Ltd | 内燃機関の制御装置 |
US5347426A (en) * | 1988-09-13 | 1994-09-13 | Pechiney Recherche | Electronic device including a passive electronic component |
JPH02189957A (ja) * | 1989-01-18 | 1990-07-25 | Mitsubishi Electric Corp | 半導体装置 |
DE3915707A1 (de) * | 1989-05-13 | 1990-11-22 | Asea Brown Boveri | Kunststoffgehaeuse und leistungshalbleitermodul mit diesem gehaeuse |
US5202578A (en) * | 1989-09-11 | 1993-04-13 | Kabushiki Kaisha Toshiba | Module-type semiconductor device of high power capacity |
JPH03177385A (ja) * | 1989-12-07 | 1991-08-01 | Kawasaki Steel Corp | 高熱伝導性回路基板 |
DE4017181C2 (de) * | 1990-05-29 | 1998-08-27 | Daimler Benz Aerospace Ag | Elektrisches Bauelement |
JP2504610B2 (ja) * | 1990-07-26 | 1996-06-05 | 株式会社東芝 | 電力用半導体装置 |
GB2249869B (en) * | 1990-09-17 | 1994-10-12 | Fuji Electric Co Ltd | Semiconductor device |
JP2772184B2 (ja) * | 1991-11-07 | 1998-07-02 | 株式会社東芝 | 半導体装置 |
JP2882143B2 (ja) * | 1991-12-10 | 1999-04-12 | 富士電機株式会社 | 半導体装置の内部配線構造 |
JPH05167002A (ja) * | 1991-12-19 | 1993-07-02 | Fuji Electric Co Ltd | 半導体装置のパッケージ構造 |
US5170337A (en) * | 1992-01-29 | 1992-12-08 | General Electric Company | Low-inductance package for multiple paralleled devices operating at high frequency |
JP3036236B2 (ja) * | 1992-06-16 | 2000-04-24 | 三菱マテリアル株式会社 | 回路基板 |
JP2725952B2 (ja) * | 1992-06-30 | 1998-03-11 | 三菱電機株式会社 | 半導体パワーモジュール |
JP2725954B2 (ja) * | 1992-07-21 | 1998-03-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2956363B2 (ja) * | 1992-07-24 | 1999-10-04 | 富士電機株式会社 | パワー半導体装置 |
JP3053298B2 (ja) * | 1992-08-19 | 2000-06-19 | 株式会社東芝 | 半導体装置 |
JP2838625B2 (ja) * | 1992-09-08 | 1998-12-16 | 株式会社日立製作所 | 半導体モジュール |
US5389743A (en) * | 1992-12-21 | 1995-02-14 | Hughes Aircraft Company | Rivet design for enhanced copper thick-film I/O pad adhesion |
EP0609528A1 (en) * | 1993-02-01 | 1994-08-10 | Motorola, Inc. | Low inductance semiconductor package |
US5559374A (en) * | 1993-03-25 | 1996-09-24 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit |
JP2973799B2 (ja) * | 1993-04-23 | 1999-11-08 | 富士電機株式会社 | パワートランジスタモジュール |
JPH06334070A (ja) * | 1993-05-27 | 1994-12-02 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2912526B2 (ja) * | 1993-07-05 | 1999-06-28 | 三菱電機株式会社 | 半導体パワーモジュールおよび複合基板 |
US5444295A (en) * | 1993-09-07 | 1995-08-22 | Delco Electronics Corp. | Linear dual switch module |
EP0661748A1 (en) * | 1993-12-28 | 1995-07-05 | Hitachi, Ltd. | Semiconductor device |
US5523620A (en) * | 1994-02-14 | 1996-06-04 | Delco Electronics Corporation | Coplanar linear dual switch module |
JP2988243B2 (ja) * | 1994-03-16 | 1999-12-13 | 株式会社日立製作所 | パワー混成集積回路装置 |
US5956231A (en) * | 1994-10-07 | 1999-09-21 | Hitachi, Ltd. | Semiconductor device having power semiconductor elements |
JP2630293B2 (ja) * | 1995-02-28 | 1997-07-16 | 日本電気株式会社 | 多層配線基板 |
-
1995
- 1995-10-04 US US08/539,075 patent/US5956231A/en not_active Expired - Lifetime
- 1995-10-04 DE DE69535775T patent/DE69535775D1/de not_active Expired - Lifetime
- 1995-10-04 EP EP19950307054 patent/EP0706221B8/en not_active Expired - Lifetime
- 1995-10-06 KR KR1019950034252A patent/KR100359051B1/ko not_active IP Right Cessation
-
1998
- 1998-08-27 US US09/385,632 patent/US6434008B1/en not_active Expired - Fee Related
-
2002
- 2002-03-20 US US10/101,463 patent/US20030016502A1/en not_active Abandoned
-
2003
- 2003-09-22 US US10/665,523 patent/US7141741B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102197814B1 (ko) * | 2020-07-31 | 2021-01-04 | 도드람양돈협동조합 | 돈두의 열처리 변색저감을 위한 원료돈의 도축방법 |
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US20040056349A1 (en) | 2004-03-25 |
DE69535775D1 (de) | 2008-08-07 |
KR100359051B1 (ko) | 2003-02-05 |
EP0706221B1 (en) | 2008-06-25 |
EP0706221B8 (en) | 2008-09-03 |
EP0706221A3 (en) | 1997-11-05 |
EP0706221A2 (en) | 1996-04-10 |
US6434008B1 (en) | 2002-08-13 |
US5956231A (en) | 1999-09-21 |
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