DE69726518T2 - Leistungshalbleiteranordnung in modularer Bauart - Google Patents

Leistungshalbleiteranordnung in modularer Bauart Download PDF

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Publication number
DE69726518T2
DE69726518T2 DE1997626518 DE69726518T DE69726518T2 DE 69726518 T2 DE69726518 T2 DE 69726518T2 DE 1997626518 DE1997626518 DE 1997626518 DE 69726518 T DE69726518 T DE 69726518T DE 69726518 T2 DE69726518 T2 DE 69726518T2
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DE
Germany
Prior art keywords
power semiconductor
modular design
semiconductor arrangement
arrangement
modular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1997626518
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English (en)
Other versions
DE69726518D1 (de
Inventor
Akira Tanaka
Hirokazu Inoue
Tadao Kushima
Yoshihiko Koike
Hideo Shimizu
Ryuichi Saito
Kazuhiro Suzuki
Yasutoshi Kurihara
Sensuke Okada
Masahiro Koizumi
Ryoichi Kajiwara
Yukio Sonobe
Kinya Nakatsu
Shigehisa Kuribayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Kyowa Engineering Co Ltd
Original Assignee
Hitachi Ltd
Hitachi Kyowa Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23616696A external-priority patent/JP3085453B2/ja
Priority claimed from JP23616796A external-priority patent/JP3267169B2/ja
Priority claimed from JP27584196A external-priority patent/JP3521651B2/ja
Application filed by Hitachi Ltd, Hitachi Kyowa Engineering Co Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69726518D1 publication Critical patent/DE69726518D1/de
Publication of DE69726518T2 publication Critical patent/DE69726518T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
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    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/3011—Impedance
DE1997626518 1996-09-06 1997-09-02 Leistungshalbleiteranordnung in modularer Bauart Expired - Lifetime DE69726518T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23616696A JP3085453B2 (ja) 1996-09-06 1996-09-06 半導体モジュール及びこれを用いたインバータ装置
JP23616796A JP3267169B2 (ja) 1996-09-06 1996-09-06 パワー半導体装置
JP27584196A JP3521651B2 (ja) 1996-10-18 1996-10-18 パワー半導体装置

Publications (2)

Publication Number Publication Date
DE69726518D1 DE69726518D1 (de) 2004-01-15
DE69726518T2 true DE69726518T2 (de) 2004-10-07

Family

ID=27332339

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997626518 Expired - Lifetime DE69726518T2 (de) 1996-09-06 1997-09-02 Leistungshalbleiteranordnung in modularer Bauart

Country Status (2)

Country Link
EP (1) EP0828341B1 (de)
DE (1) DE69726518T2 (de)

Cited By (1)

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WO2022268447A1 (de) * 2021-06-25 2022-12-29 Robert Bosch Gmbh Elektrische anordnung mit positionierhilfe und herstellungsverfahren

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JP3006585B2 (ja) * 1998-06-01 2000-02-07 富士電機株式会社 半導体装置
DE19851161A1 (de) * 1998-11-06 2000-05-11 Abb Daimler Benz Transp Stromrichtergerät mit Gleich- und Wechselspannungsverschienung
JP3695260B2 (ja) * 1999-11-04 2005-09-14 株式会社日立製作所 半導体モジュール
JP2003060157A (ja) * 2001-08-08 2003-02-28 Mitsubishi Electric Corp パワーモジュール
DE10139287A1 (de) * 2001-08-09 2003-03-13 Bombardier Transp Gmbh Halbleitermodul
EP1324391B1 (de) * 2001-12-24 2007-06-27 Abb Research Ltd. Modulgehäuse und Leistungshalbleitermodul
GB0226714D0 (en) * 2002-11-15 2002-12-24 Bombardier Transp Gmbh Converter module
DE10316356B4 (de) * 2003-04-10 2012-07-26 Semikron Elektronik Gmbh & Co. Kg Modular aufgebautes Leistungshalbleitermodul
JP4547231B2 (ja) * 2004-10-22 2010-09-22 日立オートモティブシステムズ株式会社 電力変換装置
JP4479577B2 (ja) 2005-04-28 2010-06-09 株式会社日立製作所 半導体装置
DE102006027481C5 (de) * 2006-06-14 2012-11-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit gegeneinander elektrisch isolierten Anschlusselementen
JP4751810B2 (ja) * 2006-11-02 2011-08-17 日立オートモティブシステムズ株式会社 電力変換装置
EP1936687A1 (de) 2006-12-22 2008-06-25 ABB Technology AG Elektrischer Kontakt
DE102007036048A1 (de) * 2007-08-01 2009-02-05 Siemens Ag Anordnung mit zumindest einem Halbleiterbauelement, insbesondere einem Leistungshalbleiterbauelement zur Leistungssteuerung hoher Ströme
EP2071626A1 (de) * 2007-12-11 2009-06-17 ABB Research Ltd. Halbleitermodul und Anschlußeinheit
DE102009035819A1 (de) * 2009-08-01 2011-02-03 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit stromsymmetrischem Lastanschlusselement
DE102009037257B4 (de) * 2009-08-12 2014-07-31 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Schaltungsträger und Lastanschlusselement sowie Herstellungsverfahren hierzu
US8644044B2 (en) * 2009-10-14 2014-02-04 General Electric Company Power electronics and integration system for providing a common high current inverter for use with a traction inverter and an auxiliary inverter
CN103858228B (zh) * 2011-09-30 2016-11-09 富士电机株式会社 半导体装置及其制造方法
CN102510204B (zh) * 2011-12-22 2013-10-30 江苏宏微科技有限公司 Igbt半桥功率模块
DE112013007122B4 (de) 2013-05-29 2023-09-21 Mitsubishi Electric Corporation Halbleitervorrichtung
US10652997B2 (en) 2018-02-23 2020-05-12 Panasonic Intellectual Property Management Co., Ltd. Switching power supply device
JP7151772B2 (ja) 2018-08-08 2022-10-12 三菱電機株式会社 半導体装置
WO2021116192A1 (en) * 2019-12-10 2021-06-17 Abb Power Grids Switzerland Ag Power semiconductor module with terminal block
EP3923321A1 (de) 2020-06-08 2021-12-15 CeramTec GmbH Modul mit anschlusslaschen für zuleitungen
CN112713751B (zh) * 2020-12-21 2022-06-14 中车永济电机有限公司 基于大功率igbt并联的高压电气连接方法及结构
DE102020216506A1 (de) 2020-12-22 2022-06-23 Zf Friedrichshafen Ag Halbbrücke mit einer U- oder V-förmigen Anordnung von Halbleiterschaltelementen für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Leistungsmodul für einen Inverter und Inverter

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JP3168901B2 (ja) * 1996-02-22 2001-05-21 株式会社日立製作所 パワー半導体モジュール

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EP0828341A3 (de) 2000-04-19
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DE69726518D1 (de) 2004-01-15

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