KR930006822A - 기상성장장치 - Google Patents

기상성장장치

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Publication number
KR930006822A
KR930006822A KR1019920015900A KR920015900A KR930006822A KR 930006822 A KR930006822 A KR 930006822A KR 1019920015900 A KR1019920015900 A KR 1019920015900A KR 920015900 A KR920015900 A KR 920015900A KR 930006822 A KR930006822 A KR 930006822A
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KR
South Korea
Prior art keywords
inner tube
gas
tube
reaction gas
hydrogen halide
Prior art date
Application number
KR1019920015900A
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English (en)
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KR950012910B1 (ko
Inventor
슈이치 사마타
가즈히코 미키
Original Assignee
사토 후미오
가부시키가이샤 도시바
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Application filed by 사토 후미오, 가부시키가이샤 도시바 filed Critical 사토 후미오
Publication of KR930006822A publication Critical patent/KR930006822A/ko
Application granted granted Critical
Publication of KR950012910B1 publication Critical patent/KR950012910B1/ko

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Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 이중 반응관의 내관의 외면과 외관의 내면에 월데포가 석출되는 것을 방지할 수 있는 핫월 종형 기상 성장장치를 제공하고자 하는 것으로, 이를 위해 본 발명의 기상성장장치는, 내부에 반도체기관을 복수개 배치한 보드(13)와, 이 보드(13)을 둘러싼 내관(12), 이 내관(12)의 외측에 대치된 외관(11) 및, 이 외관(11)의 외측에 배치된 히터(10)를 구비하고 있다. 내관(12) 내에 반도체기관에 대하여 반응가스를 분출하는 반응가스용 분출노즐(8)를 설치함과 더불어, 이 반응가스용 분출노즐(8)에 대향하는 내관(12)의 측면에 반응가스를 배출하는 배출구(18)를 설치한다. 내관(12)과 외관(11)의 사이에, 내관(12)의 외면 또는 외관(11)의 내면에 반응물의 석출을 억제하기 위한 할로겐화 수소가스를 분출하는 할로겐화 수소가스용 분출노즐(21)을 설치한다.

Description

기상성장장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 기상성장장치의 제1실시예를 도시한 종단면도,
제2도는 본 발명에 따른 기상성장장치의 제1실시예를 도시한 횡단면도,
제3도는 본 발명에 따른 기상성장장치의 제2실시예를 도시한 종단면도,
제4도는 본 발명에 따른 기상성장장치의 제3실시예를 도시한 종단면도.

Claims (5)

  1. 내부에 반도체기판을 복수개 배치한 보드(13)와, 이 보드(13)를 둘러싼 내관(12)이 내관의 외측에 배치된 외관(11) 및, 이 외관의 외측에 배치된 히터(10)를 구비하고 있고, 상기 내관(12)내에 반도체기관에 대하여 반응가스를 분출하는 반응가스용 분출노즐(8)을 설치함과 더불어, 상기 내관(12)에 반응가스를 배출하는 배출구(18)을 설치하고, 상기 내관(12)과 상기 외관(11)의 사이에 할로겐화 수소가스를 분출하는 할로겐화 수소가스용 분출노즐(21,31,32)을 설치함으로써, 상기 내관(12)의 외면 또는 상기 외관(11)의 내면으로 반응물의 석출을 억제하도록 구성된 것을 특징으로 하는 기상성장장치.
  2. 제1항에 있어서, 상기 할로겐화 수소가스용 분출노즐이 상기 반응가스용 분출노즐 근방에 설치된 것을 특징으로 하는 기상성장장치.
  3. 제1항에 있어서, 상기 배출구는 반응가스용 분출노즐에 대향하는 상기 내관(12)의 측면에 형성되고, 상기 할로겐화 수소가스용 분출노즐은 상기 배출구의 양측 근방에 설치되어 있는 것을 특징으로 하는 기상성장장치.
  4. 제1항에 있어서, 상기 할로겐화 수소가스용 분출노즐은 이 분출노즐의 측면부 및 상부에 복수의 배출구(23,24)를 갖춘 것을 특징으로 하는 기상성장장치.
  5. 제4항에 있어서, 상기 할로겐화 수소가스용 분출노즐의 최상부의 분출구는 상기 배출구 보다 위쪽에 있는 것을 특징으로 하는 기상성장장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920015900A 1991-09-05 1992-09-02 기상성장장치 KR950012910B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3226145A JP3040212B2 (ja) 1991-09-05 1991-09-05 気相成長装置
JP91-226145 1991-09-05

Publications (2)

Publication Number Publication Date
KR930006822A true KR930006822A (ko) 1993-04-22
KR950012910B1 KR950012910B1 (ko) 1995-10-23

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Family Applications (1)

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Country Status (3)

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US (1) US5246500A (ko)
JP (1) JP3040212B2 (ko)
KR (1) KR950012910B1 (ko)

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JPH0567571A (ja) 1993-03-19
JP3040212B2 (ja) 2000-05-15
US5246500A (en) 1993-09-21
KR950012910B1 (ko) 1995-10-23

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