KR960038443A - 피처리 기판의 처리장치 - Google Patents
피처리 기판의 처리장치 Download PDFInfo
- Publication number
- KR960038443A KR960038443A KR1019960009959A KR19960009959A KR960038443A KR 960038443 A KR960038443 A KR 960038443A KR 1019960009959 A KR1019960009959 A KR 1019960009959A KR 19960009959 A KR19960009959 A KR 19960009959A KR 960038443 A KR960038443 A KR 960038443A
- Authority
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- South Korea
- Prior art keywords
- gas
- processed
- substrate
- gas supply
- processing apparatus
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Liquid Crystal (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
본 발명의 처리장치는 처리실 내에 유지된 피처리 기판의 피처리면 쪽에 상면으로 버퍼판이 설치되어 있는 구획부재를 설치하고, 기 구획부재 중에 선단을 향하면서 횡단면적이 점차 적어지도록 형성된 인젝터를 배치한다. 이와 같은 인젝터는 길이 방향을 따라서 구멍 직경 및 피치를 정렬하여 다수의 가스 분출 구멍을 형성하는 경우, 길이 방향에 대해서 높은 균일성으로 가스를 분출하여, 구획 부재 내에 확산 한다. 그리고, 버퍼판에 형성되는 통기 구멍으로부터 균일하게 가스가 처리실 내로 통기되어 피처리 기판의 피처리면에 균일하게 가스가 공급, 형성되는 박막의 막 두께의 면내 균일성이 충분히 높게 된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 피처리 기판의 처리장치의 제1실시예의 종단면도이고, 제2도는 제1도에 나타난 처리 장치의 피처리 기판(유리 기판)의 유지·처리부의 상시도.
Claims (9)
- 처리 용기 내에서 유지되는 피처리 기판에 그의 피처리 기판과 마주하도록 설치된 가스 공급 수단으로 처리 가스를 공급하여 처리하는 처리 장치에 있어서, 상기 가스 공급 수단이 가스 공급관의 선단부에 설치되어 있음과 함께 선단부로 향하면서 횡단면적이 점차 작아지도록 형성된 중공 부재에 그의 길이 방향을 따라서 복수의 가스 분출 구멍을 형성시킨 가스 분출 구멍을 갖는 것을 특징으로 하는 처리 장치.
- 제1항에 있어서, 상기 가스 분출부와 피처리 기판과의 사이에 공간을 매개로 마주하는 다수의 통기 구멍이 형성된 버퍼판과, 상기 가스 분출부를 둘러싸도록 설치된 구획 부재를 갖는 것을 특징으로 하는 처리 장치.
- 제1항에 있어서, 피처리 기판의 피처리면이 아래로 향하는 처리 장치.
- 제1항에 있어서, 피처리 기판의 피처리면이 위로 향하는 처리 장치.
- 제1항에 있어서, 피처리 기판이 유리 기판인 처리 장치.
- 제1항에 있어서, 피처리 기판이 반도체 웨이퍼인 처리 장치.
- 처리 용기 내에서 유지된 피처리 기판에 처리 가스를 공급시켜 처리하는 처리 장치에 있어서, 피처리 기판의 피처리면에 미치는 영역의 측방에 설치되어서 피처리면을 따라서 처리를 공급하는 제1의 가스 공급 수단과, 상기 피처리 기판의 피처리면과 마주하도록 가스 공급구가 설치된 제2가스 공급 수단과, 상기 제1의 가스 공급 수단과 피처리면에 미치는 영역을 매개로 마주하도록 배기구가 설치된 배기 수단을 갖는 것을 특징으로 하는 처리 장치.
- 제7항에 있어서, 상기 제2의 가스 공급 수단이 가스 공급관의 선단부에 설치됨과 함께 선단부를 향하면서 횡단면적이 작아지도록 형성된 중공 부재의 길이 방향을 따라서 복수의 가스 분출 구멍을 형성시킨 가스 분출부를 갖는 것을 특징으로 하는 처리 장치.
- 제7항에 있어서, 상기 제2의 가스 공급 수단이 가스 공급관의 선단부에 설치됨과 함께 선단부를 향하면서 횡단면적이 작아지도록 형성된 중공 부재의 길이 방향을 따라서 복수의 가스 분출 구멍을 형성시킨 가스 분출부와, 상기 가스 분출부와 피처리 기판과의 사이에 공간을 매개로 마주하는 다수의 통기 구멍이 형성된 버퍼판과 상기 가스 분출부를 둘러쌓도록 설치된 구획 부재를 갖는 것을 특징으로 하는 처리 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10699095A JP3432636B2 (ja) | 1995-04-05 | 1995-04-05 | 処理装置及び処理方法 |
JP106990/1995 | 1995-04-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960038443A true KR960038443A (ko) | 1996-11-21 |
KR100283833B1 KR100283833B1 (ko) | 2001-03-02 |
Family
ID=14447686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960009959A KR100283833B1 (ko) | 1995-04-05 | 1996-04-03 | 성막처리장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5704981A (ko) |
JP (1) | JP3432636B2 (ko) |
KR (1) | KR100283833B1 (ko) |
TW (1) | TW353803B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110015591A (ko) * | 2008-05-05 | 2011-02-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 증가된 유동 균일성을 갖는 슬릿 밸브 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5868898A (en) * | 1996-11-21 | 1999-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fluid dispensing device for wet chemical process tank and method of using |
JP3343200B2 (ja) * | 1997-05-20 | 2002-11-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3582330B2 (ja) * | 1997-11-14 | 2004-10-27 | 東京エレクトロン株式会社 | 処理装置及びこれを用いた処理システム |
US6217937B1 (en) * | 1998-07-15 | 2001-04-17 | Cornell Research Foundation, Inc. | High throughput OMVPE apparatus |
JP2001274107A (ja) * | 2000-03-28 | 2001-10-05 | Nec Kyushu Ltd | 拡散炉 |
US6911097B1 (en) | 2000-07-31 | 2005-06-28 | Taiwan Semiconductor Manufacturing Company | Photoresist stripper using nitrogen bubbler |
US6902622B2 (en) * | 2001-04-12 | 2005-06-07 | Mattson Technology, Inc. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
JP2004018904A (ja) * | 2002-06-13 | 2004-01-22 | Sekisui Chem Co Ltd | リモート型ガス供給装置 |
KR101033123B1 (ko) * | 2004-06-30 | 2011-05-11 | 엘지디스플레이 주식회사 | 액정표시장치의 제조를 위한 챔버형 장치 |
US20060096622A1 (en) * | 2004-11-11 | 2006-05-11 | Samsung Electronics Co., Ltd. | Dry cleaning apparatus used to manufacture semiconductor devices |
US20090162261A1 (en) * | 2007-12-19 | 2009-06-25 | Kallol Baera | Plasma reactor gas distribution plate having a vertically stacked path splitting manifold |
US8512509B2 (en) * | 2007-12-19 | 2013-08-20 | Applied Materials, Inc. | Plasma reactor gas distribution plate with radially distributed path splitting manifold |
US20090159213A1 (en) * | 2007-12-19 | 2009-06-25 | Applied Materials, Inc. | Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead |
US20090159002A1 (en) * | 2007-12-19 | 2009-06-25 | Kallol Bera | Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution |
US20090162262A1 (en) * | 2007-12-19 | 2009-06-25 | Applied Material, Inc. | Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead |
JP4964280B2 (ja) * | 2009-08-17 | 2012-06-27 | キヤノンアネルバ株式会社 | 情報記録ディスク用成膜装置、及び、情報記録ディスクの製造方法 |
CN102002675B (zh) * | 2009-08-28 | 2013-07-03 | 鸿富锦精密工业(深圳)有限公司 | 真空溅镀设备的进气装置 |
JP5432686B2 (ja) * | 2009-12-03 | 2014-03-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
TW201139712A (en) * | 2010-05-12 | 2011-11-16 | Hon Hai Prec Ind Co Ltd | Sputtering device |
CN103295935B (zh) * | 2012-02-22 | 2017-06-20 | 东京毅力科创株式会社 | 基板处理装置 |
JP6029452B2 (ja) * | 2012-02-22 | 2016-11-24 | 東京エレクトロン株式会社 | 基板処理装置 |
KR20140038070A (ko) * | 2012-09-20 | 2014-03-28 | 삼성코닝정밀소재 주식회사 | 가스 분사 장치 및 이에 사용되는 인젝터 파이프 |
US9560730B2 (en) * | 2013-09-09 | 2017-01-31 | Asml Netherlands B.V. | Transport system for an extreme ultraviolet light source |
JP2016169402A (ja) * | 2015-03-11 | 2016-09-23 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60130126A (ja) * | 1983-12-16 | 1985-07-11 | Nec Corp | 光気相成長法 |
JPS6280271A (ja) * | 1985-10-02 | 1987-04-13 | Applied Materials Japan Kk | 気相成長方法 |
JPS62291923A (ja) * | 1986-06-12 | 1987-12-18 | Matsushita Electric Ind Co Ltd | 分離溝形成装置 |
EP0255454A3 (en) * | 1986-07-26 | 1991-11-21 | Nihon Shinku Gijutsu Kabushiki Kaisha | Apparatus for chemical vapor deposition |
JP2781814B2 (ja) * | 1987-11-20 | 1998-07-30 | 東京エレクトロン株式会社 | 縦形気相成長装置 |
JPH0732137B2 (ja) * | 1988-02-29 | 1995-04-10 | 東京エレクトロン東北株式会社 | 熱処理炉 |
JPH02174224A (ja) * | 1988-12-27 | 1990-07-05 | Tel Sagami Ltd | 熱処理装置 |
JP2729238B2 (ja) * | 1989-12-22 | 1998-03-18 | 東京エレクトロン株式会社 | 縦型処理装置 |
JPH03214723A (ja) * | 1990-01-19 | 1991-09-19 | Nec Corp | プラズマcvd装置 |
JPH06274400A (ja) * | 1993-03-18 | 1994-09-30 | Olympus Optical Co Ltd | 縫製処理管理用の電子情報処理装置 |
JPH06346485A (ja) * | 1993-06-07 | 1994-12-20 | Komatsu Ltd | ブルドーザの車速感応作業機コントロール装置 |
JPH08115883A (ja) * | 1994-10-12 | 1996-05-07 | Tokyo Electron Ltd | 成膜装置 |
-
1995
- 1995-04-05 JP JP10699095A patent/JP3432636B2/ja not_active Expired - Fee Related
-
1996
- 1996-04-02 US US08/626,454 patent/US5704981A/en not_active Expired - Fee Related
- 1996-04-03 KR KR1019960009959A patent/KR100283833B1/ko not_active IP Right Cessation
- 1996-04-05 TW TW085104040A patent/TW353803B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110015591A (ko) * | 2008-05-05 | 2011-02-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 증가된 유동 균일성을 갖는 슬릿 밸브 |
Also Published As
Publication number | Publication date |
---|---|
US5704981A (en) | 1998-01-06 |
KR100283833B1 (ko) | 2001-03-02 |
JPH08279468A (ja) | 1996-10-22 |
JP3432636B2 (ja) | 2003-08-04 |
TW353803B (en) | 1999-03-01 |
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