KR960038443A - 피처리 기판의 처리장치 - Google Patents

피처리 기판의 처리장치 Download PDF

Info

Publication number
KR960038443A
KR960038443A KR1019960009959A KR19960009959A KR960038443A KR 960038443 A KR960038443 A KR 960038443A KR 1019960009959 A KR1019960009959 A KR 1019960009959A KR 19960009959 A KR19960009959 A KR 19960009959A KR 960038443 A KR960038443 A KR 960038443A
Authority
KR
South Korea
Prior art keywords
gas
processed
substrate
gas supply
processing apparatus
Prior art date
Application number
KR1019960009959A
Other languages
English (en)
Other versions
KR100283833B1 (ko
Inventor
순지 가와카미
요지 미주타니
유타카 미우라
타카히로 시모다
Original Assignee
이노 우에 아키라
도쿄 일렉트론 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이노 우에 아키라, 도쿄 일렉트론 가부시키가이샤 filed Critical 이노 우에 아키라
Publication of KR960038443A publication Critical patent/KR960038443A/ko
Application granted granted Critical
Publication of KR100283833B1 publication Critical patent/KR100283833B1/ko

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

본 발명의 처리장치는 처리실 내에 유지된 피처리 기판의 피처리면 쪽에 상면으로 버퍼판이 설치되어 있는 구획부재를 설치하고, 기 구획부재 중에 선단을 향하면서 횡단면적이 점차 적어지도록 형성된 인젝터를 배치한다. 이와 같은 인젝터는 길이 방향을 따라서 구멍 직경 및 피치를 정렬하여 다수의 가스 분출 구멍을 형성하는 경우, 길이 방향에 대해서 높은 균일성으로 가스를 분출하여, 구획 부재 내에 확산 한다. 그리고, 버퍼판에 형성되는 통기 구멍으로부터 균일하게 가스가 처리실 내로 통기되어 피처리 기판의 피처리면에 균일하게 가스가 공급, 형성되는 박막의 막 두께의 면내 균일성이 충분히 높게 된다.

Description

피처리 기판의 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 피처리 기판의 처리장치의 제1실시예의 종단면도이고, 제2도는 제1도에 나타난 처리 장치의 피처리 기판(유리 기판)의 유지·처리부의 상시도.

Claims (9)

  1. 처리 용기 내에서 유지되는 피처리 기판에 그의 피처리 기판과 마주하도록 설치된 가스 공급 수단으로 처리 가스를 공급하여 처리하는 처리 장치에 있어서, 상기 가스 공급 수단이 가스 공급관의 선단부에 설치되어 있음과 함께 선단부로 향하면서 횡단면적이 점차 작아지도록 형성된 중공 부재에 그의 길이 방향을 따라서 복수의 가스 분출 구멍을 형성시킨 가스 분출 구멍을 갖는 것을 특징으로 하는 처리 장치.
  2. 제1항에 있어서, 상기 가스 분출부와 피처리 기판과의 사이에 공간을 매개로 마주하는 다수의 통기 구멍이 형성된 버퍼판과, 상기 가스 분출부를 둘러싸도록 설치된 구획 부재를 갖는 것을 특징으로 하는 처리 장치.
  3. 제1항에 있어서, 피처리 기판의 피처리면이 아래로 향하는 처리 장치.
  4. 제1항에 있어서, 피처리 기판의 피처리면이 위로 향하는 처리 장치.
  5. 제1항에 있어서, 피처리 기판이 유리 기판인 처리 장치.
  6. 제1항에 있어서, 피처리 기판이 반도체 웨이퍼인 처리 장치.
  7. 처리 용기 내에서 유지된 피처리 기판에 처리 가스를 공급시켜 처리하는 처리 장치에 있어서, 피처리 기판의 피처리면에 미치는 영역의 측방에 설치되어서 피처리면을 따라서 처리를 공급하는 제1의 가스 공급 수단과, 상기 피처리 기판의 피처리면과 마주하도록 가스 공급구가 설치된 제2가스 공급 수단과, 상기 제1의 가스 공급 수단과 피처리면에 미치는 영역을 매개로 마주하도록 배기구가 설치된 배기 수단을 갖는 것을 특징으로 하는 처리 장치.
  8. 제7항에 있어서, 상기 제2의 가스 공급 수단이 가스 공급관의 선단부에 설치됨과 함께 선단부를 향하면서 횡단면적이 작아지도록 형성된 중공 부재의 길이 방향을 따라서 복수의 가스 분출 구멍을 형성시킨 가스 분출부를 갖는 것을 특징으로 하는 처리 장치.
  9. 제7항에 있어서, 상기 제2의 가스 공급 수단이 가스 공급관의 선단부에 설치됨과 함께 선단부를 향하면서 횡단면적이 작아지도록 형성된 중공 부재의 길이 방향을 따라서 복수의 가스 분출 구멍을 형성시킨 가스 분출부와, 상기 가스 분출부와 피처리 기판과의 사이에 공간을 매개로 마주하는 다수의 통기 구멍이 형성된 버퍼판과 상기 가스 분출부를 둘러쌓도록 설치된 구획 부재를 갖는 것을 특징으로 하는 처리 장치.
KR1019960009959A 1995-04-05 1996-04-03 성막처리장치 KR100283833B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP106990/1995 1995-04-05
JP10699095A JP3432636B2 (ja) 1995-04-05 1995-04-05 処理装置及び処理方法

Publications (2)

Publication Number Publication Date
KR960038443A true KR960038443A (ko) 1996-11-21
KR100283833B1 KR100283833B1 (ko) 2001-03-02

Family

ID=14447686

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960009959A KR100283833B1 (ko) 1995-04-05 1996-04-03 성막처리장치

Country Status (4)

Country Link
US (1) US5704981A (ko)
JP (1) JP3432636B2 (ko)
KR (1) KR100283833B1 (ko)
TW (1) TW353803B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110015591A (ko) * 2008-05-05 2011-02-16 어플라이드 머티어리얼스, 인코포레이티드 증가된 유동 균일성을 갖는 슬릿 밸브

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5868898A (en) * 1996-11-21 1999-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Fluid dispensing device for wet chemical process tank and method of using
JP3343200B2 (ja) * 1997-05-20 2002-11-11 東京エレクトロン株式会社 プラズマ処理装置
JP3582330B2 (ja) * 1997-11-14 2004-10-27 東京エレクトロン株式会社 処理装置及びこれを用いた処理システム
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
JP2001274107A (ja) * 2000-03-28 2001-10-05 Nec Kyushu Ltd 拡散炉
US6911097B1 (en) 2000-07-31 2005-06-28 Taiwan Semiconductor Manufacturing Company Photoresist stripper using nitrogen bubbler
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
JP2004018904A (ja) * 2002-06-13 2004-01-22 Sekisui Chem Co Ltd リモート型ガス供給装置
KR101033123B1 (ko) * 2004-06-30 2011-05-11 엘지디스플레이 주식회사 액정표시장치의 제조를 위한 챔버형 장치
JP2006140492A (ja) * 2004-11-11 2006-06-01 Samsung Electronics Co Ltd 半導体素子製造に使用される乾式クリーニング装置
US20090162262A1 (en) * 2007-12-19 2009-06-25 Applied Material, Inc. Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead
US20090159213A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US20090162261A1 (en) * 2007-12-19 2009-06-25 Kallol Baera Plasma reactor gas distribution plate having a vertically stacked path splitting manifold
US20090159002A1 (en) * 2007-12-19 2009-06-25 Kallol Bera Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
US8512509B2 (en) * 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
JP4964280B2 (ja) * 2009-08-17 2012-06-27 キヤノンアネルバ株式会社 情報記録ディスク用成膜装置、及び、情報記録ディスクの製造方法
CN102002675B (zh) * 2009-08-28 2013-07-03 鸿富锦精密工业（深圳）有限公司 真空溅镀设备的进气装置
JP5432686B2 (ja) * 2009-12-03 2014-03-05 東京エレクトロン株式会社 プラズマ処理装置
TW201139712A (en) * 2010-05-12 2011-11-16 Hon Hai Prec Ind Co Ltd Sputtering device
CN103295935B (zh) * 2012-02-22 2017-06-20 东京毅力科创株式会社 基板处理装置
JP6029452B2 (ja) * 2012-02-22 2016-11-24 東京エレクトロン株式会社 基板処理装置
KR20140038070A (ko) * 2012-09-20 2014-03-28 삼성코닝정밀소재 주식회사 가스 분사 장치 및 이에 사용되는 인젝터 파이프
US9560730B2 (en) * 2013-09-09 2017-01-31 Asml Netherlands B.V. Transport system for an extreme ultraviolet light source
JP2016169402A (ja) * 2015-03-11 2016-09-23 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130126A (ja) * 1983-12-16 1985-07-11 Nec Corp 光気相成長法
JPS6280271A (ja) * 1985-10-02 1987-04-13 Applied Materials Japan Kk 気相成長方法
JPS62291923A (ja) * 1986-06-12 1987-12-18 Matsushita Electric Ind Co Ltd 分離溝形成装置
US4924807A (en) * 1986-07-26 1990-05-15 Nihon Shinku Gijutsu Kabushiki Kaisha Apparatus for chemical vapor deposition
JP2781814B2 (ja) * 1987-11-20 1998-07-30 東京エレクトロン株式会社 縦形気相成長装置
JPH0732137B2 (ja) * 1988-02-29 1995-04-10 東京エレクトロン東北株式会社 熱処理炉
JPH02174224A (ja) * 1988-12-27 1990-07-05 Tel Sagami Ltd 熱処理装置
JP2729238B2 (ja) * 1989-12-22 1998-03-18 東京エレクトロン株式会社 縦型処理装置
JPH03214723A (ja) * 1990-01-19 1991-09-19 Nec Corp プラズマｃｖｄ装置
JPH06274400A (ja) * 1993-03-18 1994-09-30 Olympus Optical Co Ltd 縫製処理管理用の電子情報処理装置
JPH06346485A (ja) * 1993-06-07 1994-12-20 Komatsu Ltd ブルドーザの車速感応作業機コントロール装置
JPH08115883A (ja) * 1994-10-12 1996-05-07 Tokyo Electron Ltd 成膜装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110015591A (ko) * 2008-05-05 2011-02-16 어플라이드 머티어리얼스, 인코포레이티드 증가된 유동 균일성을 갖는 슬릿 밸브

Also Published As

Publication number Publication date
KR100283833B1 (ko) 2001-03-02
TW353803B (en) 1999-03-01
JPH08279468A (ja) 1996-10-22
JP3432636B2 (ja) 2003-08-04
US5704981A (en) 1998-01-06

Similar Documents

Publication Publication Date Title
KR960038443A (ko) 피처리 기판의 처리장치
JP5213451B2 (ja) 小型エアゾールジェット流及びエアゾールジェット流配列構造
JP2005251948A (ja) 非接触保持装置および非接触保持搬送装置
KR20130037163A (ko) 도포방법 및 도포장치
JP4327319B2 (ja) 雛壇形シャワーヘッド、及びそのシャワーヘッドを用いた真空処理装置
KR20010101575A (ko) 기판 건조방법 및 그 장치
KR20030003235A (ko) 기판처리장치
US3958587A (en) Manifold for fluid distribution and removal
JP2000235954A (ja) ガス吹き出し部材
JP2008285747A (ja) コーティング装置のためのフラッディングチャンバ
KR102292368B1 (ko) 도포 장치
KR102624573B1 (ko) 기판 처리 장치 및 잉크젯 장치
CN214234531U (zh) 等离子体清洁喷头及装置
JPH0766100A (ja) エア−ナイフおよびエア−ナイフを用いた処理装置
KR100447142B1 (ko) 가스 분배 플레이트를 갖는 플레이트 샤워헤드 및 그를이용한 가스 확산 방법
JP4069315B2 (ja) 基板乾燥方法およびその装置
KR19980084815A (ko) 화학보조 이온빔 식각장치
KR930014836A (ko) 액체공급장치
KR20140115829A (ko) 식각 장치
KR101866796B1 (ko) 잉크 분사 유닛 및 이를 포함하는 화소 형성 장치
KR20220067906A (ko) 기판 처리 장치
KR200142662Y1 (ko) 패널 코팅용 분사장치
KR20080002178A (ko) 비접촉식 웨이퍼 지지장치
KR200267969Y1 (ko) 케미컬공급장치
KR20030001099A (ko) 가스 분사 시스템

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20051208

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee