KR920010714A - 정전 척 - Google Patents

정전 척 Download PDF

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Publication number
KR920010714A
KR920010714A KR1019910020383A KR910020383A KR920010714A KR 920010714 A KR920010714 A KR 920010714A KR 1019910020383 A KR1019910020383 A KR 1019910020383A KR 910020383 A KR910020383 A KR 910020383A KR 920010714 A KR920010714 A KR 920010714A
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KR
South Korea
Prior art keywords
insulating layer
electrostatic chuck
electrode
adsorbent
electrostatic
Prior art date
Application number
KR1019910020383A
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English (en)
Other versions
KR100220212B1 (ko
Inventor
도시히사 노자와
쥰이찌 아라미
신지 구보따
이사히로 하세가와
가쯔야 오꾸무라
Original Assignee
이노우에 아끼라
도꾜 일렉트론 리미티드
아오이 죠이찌
가부시끼가이샤 도시바
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Application filed by 이노우에 아끼라, 도꾜 일렉트론 리미티드, 아오이 죠이찌, 가부시끼가이샤 도시바 filed Critical 이노우에 아끼라
Publication of KR920010714A publication Critical patent/KR920010714A/ko
Application granted granted Critical
Publication of KR100220212B1 publication Critical patent/KR100220212B1/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/23Chucks or sockets with magnetic or electrostatic means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

내용 없음

Description

정전 척
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 상태에 관한 정전척을 이용한 마그네트론 플라즈마 에칭장치를 나타내는 개략 구성도;
제2도는 본 발명의 정전척의 일례를 나타내는 단면도;
제3도는 제2도의 정전척의 베이스 부재를 나타내는 사시도.

Claims (13)

  1. 피흡착체를 쿨롱힘으로 흡착하는 정전척으로서, 베이스부재와, 베이스 부재위에 형성된 제1절연층과, 무기유전체로 형성된 제2절연층과, 제1절연층과 제2절연층과의 사이 또는 제1절연층속에 형성된 전극과, 제1절연층과 제2절연층을 접착하기 위한 유기재료의 접착층을 가지고, 피흡착제는 제2절연층의 위에 위치시키고, 피흡착체와 전극과의 사이에 전압을 인가함으로써 발생하는 정전기에 기인하는 쿨롱힘에 의해, 제2절연층위에 피흡착체가 흡착되는 것을 특징으로 하는 정전 척.
  2. 제1항에 있어서, 상기 제2절연층은 소결체로 형성되는 있는 것을 특징으로 하는 정전 척.
  3. 제1항에 있어서, 상기 제2절연층은 AIN으로 형성되어 있는 것을 특징으로 하는 정전 척.
  4. 제1항에 있어서, 상기 제2절연층은 박막인 것을 특징으로 하는 정전 척.
  5. 제1항에 있어서, 상기 제2절연층은 결정체 또는 유리로 형성되어 있는 것을 특징으로 하는 정전 척.
  6. 제1항에 있어서, 상기 제1절연층은 유기재료로 형성되어 있는 것을 특징으로 하는 정전 척.
  7. 제6항에 있어서, 상기 제1절연층은 폴리이미드로 형성되어 있는 것을 특징으로 하는 정전 척.
  8. 제1항에 있어서, 상기 접착층은 열경화성 수지로 형성되어 있는 것을 특징으로 하는 정전 척.
  9. 제1항에 있어서, 상기 전극은 상기 접착제층속에 형성된 것을 특징으로 하는 정전 척.
  10. 제1항에 있어서, 상기 전극은 상기 제2절연층의 하면에 형성된 것을 특징으로 하는 정전 척.
  11. 제1항에 있어서, 상기 전극은 상기 제1절연층의 상면에 형성된 것을 특징으로 하는 정전 척.
  12. 피흡착체를 쿨롱힘으로 흡착하는 정전척장치로서, 베이스부재와, 베이스 부재위에 형성되고, 또한 베이스 부재측에 형성되는 제1절연층과, 피흡착체측에 형성되는 무기유전체로 형성된 제2절연층과, 제1절연층과 제2절연층과의 사이 또는 제1절연층속에 형성된 전극과, 제1절연층과 제2절연층을 접착하기 위한 유기재료의 접착층을 구비한 정전 흡착시트와, 상기 전극과 피흡착제와의 사이에 전압을 인가하기 위한 전원수단과, 상기 전원에서 전극으로 급전하기 위한 급전수단을 구비하고, 피합착체는 제2절연층의 위에 위치되고, 피흡착체와 전극과의 사이에 인가된 전압에 의해 발생하는 정전기에 기인하는 쿨롱힘에 의해, 제2절연층위에 피흡착체가 흡착되는 것을 특징으로 하는 정전 척장치.
  13. 제12항에 있어서, 상기 정전 흡착시트는, 그 상하면에 관통하여 형성된 가스 도입구를 가지고, 이 가스도입구를 통하여 피흡착체와 정전흡착시트와의 사이에 열전달용의 가스가 공급되는 것을 특징으로 하는 정전 척장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910020383A 1990-11-17 1991-11-15 정전 척 KR100220212B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-312479 1990-11-17
JP31247990A JP3238925B2 (ja) 1990-11-17 1990-11-17 静電チャック

Publications (2)

Publication Number Publication Date
KR920010714A true KR920010714A (ko) 1992-06-27
KR100220212B1 KR100220212B1 (ko) 1999-10-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910020383A KR100220212B1 (ko) 1990-11-17 1991-11-15 정전 척

Country Status (6)

Country Link
US (1) US5539179A (ko)
EP (1) EP0486966B1 (ko)
JP (1) JP3238925B2 (ko)
KR (1) KR100220212B1 (ko)
DE (1) DE69111027T2 (ko)
TW (1) TW212253B (ko)

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JPS6131636U (ja) * 1984-07-31 1986-02-26 株式会社 徳田製作所 静電チヤツク
US4724510A (en) * 1986-12-12 1988-02-09 Tegal Corporation Electrostatic wafer clamp
JPH01284533A (ja) * 1988-05-11 1989-11-15 Tdk Corp オレフィン樹脂の接着方法
JPH0227748A (ja) * 1988-07-16 1990-01-30 Tomoegawa Paper Co Ltd 静電チャック装置及びその作成方法
JP2689527B2 (ja) * 1988-09-30 1997-12-10 日立電線株式会社 耐放射線性電線・ケーブル
JPH02304946A (ja) * 1989-05-19 1990-12-18 Mitsui Petrochem Ind Ltd 静電チャック
JPH03152953A (ja) * 1989-11-10 1991-06-28 Nikon Corp 静電チヤツク
US5191506A (en) * 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck

Also Published As

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DE69111027T2 (de) 1996-01-04
US5539179A (en) 1996-07-23
TW212253B (ko) 1993-09-01
EP0486966A1 (en) 1992-05-27
KR100220212B1 (ko) 1999-10-01
JP3238925B2 (ja) 2001-12-17
EP0486966B1 (en) 1995-07-05
DE69111027D1 (de) 1995-08-10
JPH04186653A (ja) 1992-07-03

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