KR930013208A - 드라이에칭 장치 - Google Patents

드라이에칭 장치 Download PDF

Info

Publication number
KR930013208A
KR930013208A KR1019920023687A KR920023687A KR930013208A KR 930013208 A KR930013208 A KR 930013208A KR 1019920023687 A KR1019920023687 A KR 1019920023687A KR 920023687 A KR920023687 A KR 920023687A KR 930013208 A KR930013208 A KR 930013208A
Authority
KR
South Korea
Prior art keywords
base material
dry etching
etching apparatus
insulating layer
electrode
Prior art date
Application number
KR1019920023687A
Other languages
English (en)
Other versions
KR950014076B1 (ko
Inventor
타다시 키무라
요시노브 나가노
카즈유끼 토미타
테쯔 이께다
Original Assignee
다니이 아끼오
마쯔시다덴기산교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니이 아끼오, 마쯔시다덴기산교 가부시기가이샤 filed Critical 다니이 아끼오
Publication of KR930013208A publication Critical patent/KR930013208A/ko
Application granted granted Critical
Publication of KR950014076B1 publication Critical patent/KR950014076B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 하부전극에 대한 베이스재의 잔류정전 흡착력을 저감하고, 반송트러블을 해소해서 신뢰성이 높은 드라이에칭 장치를 제공하는 것을 목적으로한 것으로서, 그 구성에 있어서, 베이스재(4)를 유지하는 하부전극(2)의 표면을 요철형상으로해서 그 표면을 절연층(3)으로 덮고, 또는 하부전극(2)의 표면의 일부분에 절연층(3)을 형성하므로서, 베이스(4)와 전극(2)와의 접촉면적을 저감하고, 그 결과 잔류정전 흡착력을 감소시키고 있는 것을 특징으로 한다.

Description

드라이에칭 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 있어서의 드라이에칭장치의 반응실의 단면도.
제2도는 동 실시예에 있어서의 전극의 개구율과 베이스재 온도와 잔류정전흡착력의 관계를 표시한 그래프.
제3도는 다른 실시예에 있어서의 드라이에칭 장치의 반응실의 단면도.

Claims (2)

  1. 대향하는 평행 평판전극을 가지고, 베이스재를 유지하는 전극에 고주파전력을 인가하는 반응성이온에칭형의 드라이에칭 장치에 있어서, 베이스재를 유지하는 전극의 표면을 요철형상으로 형성하고 또한 그 표면을 절연층으로 덮어서 베이스재와 접촉하지 않는 부분을 형성하는 것을 특징으로 하는 드라이에칭 장치.
  2. 대향하는 평행 평판전극을 가지고, 베이스재를 유지하는 전극에 고주파전력을 인가하는 반응성이온에칭형의 드라이에칭 장치에 있어서, 베이스재를 유지하는 전극의 표면의 일부분만을 절연층으로 덮고, 그 절연층만이 베이스재와 접촉하도록 한것을 특징으로 하는 드라이에칭 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920023687A 1991-12-11 1992-12-09 드라이에칭장치 KR950014076B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-327180 1991-12-11
JP32718091A JP2758755B2 (ja) 1991-12-11 1991-12-11 ドライエッチング装置及び方法

Publications (2)

Publication Number Publication Date
KR930013208A true KR930013208A (ko) 1993-07-21
KR950014076B1 KR950014076B1 (ko) 1995-11-21

Family

ID=18196206

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920023687A KR950014076B1 (ko) 1991-12-11 1992-12-09 드라이에칭장치

Country Status (3)

Country Link
US (1) US5443689A (ko)
JP (1) JP2758755B2 (ko)
KR (1) KR950014076B1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544379B2 (en) 1993-09-16 2003-04-08 Hitachi, Ltd. Method of holding substrate and substrate holding system
TW277139B (ko) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
KR0140653B1 (ko) * 1994-12-28 1998-07-15 김주용 반응성 이온 에칭 장비의 에치 레이트 조절장치
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
US6712019B2 (en) * 1996-02-08 2004-03-30 Canon Kabushiki Kaisha Film forming apparatus having electrically insulated element that introduces power of 20-450MHz
US5976309A (en) * 1996-12-17 1999-11-02 Lsi Logic Corporation Electrode assembly for plasma reactor
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
JP2002305179A (ja) * 2001-04-05 2002-10-18 Matsushita Electric Ind Co Ltd プラズマ処理方法
WO2003073489A1 (fr) * 2002-02-28 2003-09-04 Tokyo Electron Limited Dispositif de traitement a plasma et unite d'alimentation
KR100442194B1 (ko) * 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
US7232591B2 (en) 2002-04-09 2007-06-19 Matsushita Electric Industrial Co., Ltd. Method of using an adhesive for temperature control during plasma processing
KR100511854B1 (ko) 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
US20040173469A1 (en) * 2003-03-04 2004-09-09 Ryujiro Udo Plasma processing apparatus and method for manufacturing electrostatic chuck
CN100345274C (zh) * 2003-02-27 2007-10-24 株式会社日立高新技术 静电吸盘的制造方法
JP4281692B2 (ja) * 2005-02-15 2009-06-17 パナソニック株式会社 プラズマ処理装置
JP4508054B2 (ja) * 2005-09-12 2010-07-21 パナソニック株式会社 電極部材の製造方法
CN103149751B (zh) * 2013-02-19 2015-09-16 北京京东方光电科技有限公司 一种下部电极及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555530A (en) * 1978-10-18 1980-04-23 Takuo Sugano Electrode device for plasma processor
JPS59181620A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 反応性イオンエツチング方法
JPH0722150B2 (ja) * 1984-03-07 1995-03-08 株式会社日立製作所 プラズマ処理装置
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
JPH0730468B2 (ja) * 1988-06-09 1995-04-05 日電アネルバ株式会社 ドライエッチング装置
JPH02155230A (ja) * 1988-12-07 1990-06-14 Matsushita Electric Ind Co Ltd ドライエッチング装置
JP3010683B2 (ja) * 1990-05-24 2000-02-21 松下電器産業株式会社 プラズマ処理方法

Also Published As

Publication number Publication date
JP2758755B2 (ja) 1998-05-28
US5443689A (en) 1995-08-22
KR950014076B1 (ko) 1995-11-21
JPH05160076A (ja) 1993-06-25

Similar Documents

Publication Publication Date Title
KR930013208A (ko) 드라이에칭 장치
TW324843B (en) Compound electrode stack capacitor
KR830005732A (ko) 전기신호 발생장치
KR920003819A (ko) 정전척 및 이 정전척을 구비한 플라즈마 장치
JPS6452355A (en) Two-dimensional electric conductor
KR890005769A (ko) 정전용량형 감응소자 및 그 제조방법
JPS55161341A (en) Microwave ion source
TW352441B (en) Noiseless dispersion electroluminescent device and switch unit using same
KR910010656A (ko) 대전력용 반도체장치
SE8102377L (sv) Elektrisk kontakt- eller avbrytaranordning
KR830008382A (ko) 전자총
JPS5764950A (en) Electrostatically attracting device and method therefor
KR960012283A (ko) 정전척 및 그 제조방법
US2652522A (en) Rectifier stack
SE8501516L (sv) Membranomkopplare
FR2172200B1 (ko)
JPS5647574A (en) Plasma etching apparatus
GB2127221B (en) Radiation-controlled electrical switches
FR2370520A1 (fr) Procede d'application d'une matiere sur une structure mince ou un tissu et dispositif pour la mise en oeuvre de ce procede
JPS60181027U (ja) 反応性イオンエツチング装置
ES2174453T3 (es) Sustrato con una conductividad unidireccional perpendicular a su superficie, dispositivos que comprenden dicho sustrato y metodos para fabricar dicho sustrato.
JPS5687057A (en) Electrostatic recording electrode head
KR880008708A (ko) 유리절연판을 이용한 표면방전형 플라즈마 디스플레이 판넬
JPS5724565A (en) Semiconductor circuit element
ES2129367A1 (es) Procedimiento para la fabricacion de paneles calefactores, y paneles obtenidos.

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20081110

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee