KR900014997A - 고장 방지 컴퓨터 메모리 시스템 - Google Patents

고장 방지 컴퓨터 메모리 시스템 Download PDF

Info

Publication number
KR900014997A
KR900014997A KR1019900001879A KR900001879A KR900014997A KR 900014997 A KR900014997 A KR 900014997A KR 1019900001879 A KR1019900001879 A KR 1019900001879A KR 900001879 A KR900001879 A KR 900001879A KR 900014997 A KR900014997 A KR 900014997A
Authority
KR
South Korea
Prior art keywords
memory
error
error correction
unit
detection means
Prior art date
Application number
KR1019900001879A
Other languages
English (en)
Other versions
KR920005297B1 (ko
Inventor
마틴 브레이크 로버트
크레이그 보쎈 더글라스
첸 친-롱
앳킨슨 피필드 죤
레오 캘터 하워드
로 틴-치
Original Assignee
하워드 지. 피거로아
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 하워드 지. 피거로아, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 하워드 지. 피거로아
Publication of KR900014997A publication Critical patent/KR900014997A/ko
Application granted granted Critical
Publication of KR920005297B1 publication Critical patent/KR920005297B1/ko

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/16Protection against loss of memory contents
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/1052Bypassing or disabling error detection or correction
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Hardware Redundancy (AREA)
  • Detection And Correction Of Errors (AREA)

Abstract

내용 없음.

Description

고장 방지 컴퓨터 메모리 시스템
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 특히 이중 레벨 에라 교정을 실행하기에 적합한 메모리 구조를 보여주는 부분 개략 볼록 다이어그램.
제2도는 제1도에 유사한 부분 볼록 다이어그램으로서 각각의 메모리 유닛(칩)상에 출력 록크-업 수단이 배치되어 있는 것을 도시하는 블록 다이어그램.

Claims (7)

  1. 어드레스 정보를 수신하여 이에 응답해 데이타 정보를 공급하는 고장 방지 컴퓨터 메모리 시스템으로서, 복수의 디지탈 메모리 유닛과; 상기 메모리 유닛내에 메모리 셀로 부터 판독된 데이타에서 에라를 교정 및 검출하기 위하여 그리고 교정 불능 에라 신호를 발생시키기 위하여 상기 메모리 우닛 각각에 관련되어 있는 복수의 유닛레벨 에라 교정 및 검출수단; 관련 유닛 레벨 에라 교정 및 검출 수단으로 부터의 상기 교정 불능 에라 신호의 수신시에 관련 메모리 유닛들로 부터의 적어도 한 출력 비트를 고정값에 세트시키는 동작을 하며 상기 메모리 유닛들 각각에 관련되어 있는 복수의 유닛 레벨 로크-업 수단과; 상기 메모리 유닛들로 부터 데이타를 수신하여 상기 로크-업 수단의 동작에 의한 하드 에라를 교정하는 동작을 하는 시스템 레벨 에라 교정 및 검출 수단을 포함하여 이루어지는 고장 방지 컴퓨터 메모리 시스템.
  2. 제1항에 있어서, 상기 메모리 유닛들은 반도체 메모리 칩을 포함하는 것.
  3. 제1항에 있어서, 상기 유닛 레벨 에라 교정 및 검출 수단은 싱글 에라 교정 및 더블 에라 검출을 실행하는 것.
  4. 제1항에 있어서, 고장 방지 컴퓨터 메모리 시스템은 상기 불능수단의 작동기를 제어하는 동작을 하는 모드스위칭 수단을 더 구비하는 것.
  5. 어드레스 정보를 수신하여 이에 응답해 데이타정보를 제공하는 고장 방지 메모리 유닛으로서, 복수의 메모리 셀과; 상기 메모리 셀로 부터 판독된 데이타에 대한 에라 교정 및 검출하며 교정 불능 에라 신호를 발생시키는 수단과; 상기 에라 고정 및 검출 수단으로 부터 교정 불능에라의 지시에 따라 상기 메모리로 부터의 적어도 한 출력을 고정값에 세트시키는 로크-업 수단을 포함하여 이루어지는 고장 방지 메모리 유닛.
  6. 싱글 집적 회로 칩상에 배치되는 제4항의 메모리 유닛.
  7. 제4항에 있어서, 에라 교정 및 검출 수단은 싱글 에라 교정 및 더블 에라 검출을 실행하는 것.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900001879A 1989-03-10 1990-02-16 고장 방지 컴퓨터 메모리 시스템 KR920005297B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US322,255 1989-03-10
US07/322,255 US5058115A (en) 1989-03-10 1989-03-10 Fault tolerant computer memory systems and components employing dual level error correction and detection with lock-up feature
US322255 1994-10-13

Publications (2)

Publication Number Publication Date
KR900014997A true KR900014997A (ko) 1990-10-25
KR920005297B1 KR920005297B1 (ko) 1992-06-29

Family

ID=23254073

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900001879A KR920005297B1 (ko) 1989-03-10 1990-02-16 고장 방지 컴퓨터 메모리 시스템

Country Status (13)

Country Link
US (1) US5058115A (ko)
EP (1) EP0386462B1 (ko)
JP (1) JPH0743678B2 (ko)
KR (1) KR920005297B1 (ko)
CN (1) CN1016009B (ko)
AR (1) AR243288A1 (ko)
AU (1) AU623490B2 (ko)
BR (1) BR9001125A (ko)
CA (1) CA2002362C (ko)
DE (1) DE69026743T2 (ko)
MY (1) MY105251A (ko)
NZ (1) NZ232458A (ko)
SG (1) SG44390A1 (ko)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100202716B1 (ko) * 1996-12-17 1999-06-15 이종수 엘리베이터의 신호 전송장치
US5228046A (en) * 1989-03-10 1993-07-13 International Business Machines Fault tolerant computer memory systems and components employing dual level error correction and detection with disablement feature
US5210831A (en) * 1989-10-30 1993-05-11 International Business Machines Corporation Methods and apparatus for insulating a branch prediction mechanism from data dependent branch table updates that result from variable test operand locations
US5418796A (en) * 1991-03-26 1995-05-23 International Business Machines Corporation Synergistic multiple bit error correction for memory of array chips
US5274646A (en) * 1991-04-17 1993-12-28 International Business Machines Corporation Excessive error correction control
JPH05225798A (ja) * 1991-08-14 1993-09-03 Internatl Business Mach Corp <Ibm> メモリシステム
US5502728A (en) * 1992-02-14 1996-03-26 International Business Machines Corporation Large, fault-tolerant, non-volatile, multiported memory
US5455939A (en) * 1992-06-17 1995-10-03 Intel Corporation Method and apparatus for error detection and correction of data transferred between a CPU and system memory
US5463644A (en) * 1992-11-13 1995-10-31 Unisys Corporation Resilient storage system
US5379304A (en) * 1994-01-28 1995-01-03 International Business Machines Corporation Method and structure for providing error correction code and parity for each byte on SIMM's
US5450422A (en) * 1994-01-28 1995-09-12 International Business Machines Corporation Method and structure for providing error correction code for each byte on SIMM'S
US5465262A (en) * 1994-01-28 1995-11-07 International Business Machines Corporation Method and structure for providing error correction code and automatic parity sensing
US5623506A (en) * 1994-01-28 1997-04-22 International Business Machines Corporation Method and structure for providing error correction code within a system having SIMMs
US5541941A (en) * 1994-01-28 1996-07-30 International Business Machines Corporation Method and structure for providing automatic parity sensing
US5535226A (en) * 1994-05-31 1996-07-09 International Business Machines Corporation On-chip ECC status
US5467361A (en) * 1994-06-20 1995-11-14 International Business Machines Corporation Method and system for separate data and media maintenance within direct access storage devices
US5761221A (en) * 1995-12-11 1998-06-02 International Business Machines Corporation Memory implemented error detection and correction code using memory modules
US5768294A (en) * 1995-12-11 1998-06-16 International Business Machines Corporation Memory implemented error detection and correction code capable of detecting errors in fetching data from a wrong address
US5691996A (en) * 1995-12-11 1997-11-25 International Business Machines Corporation Memory implemented error detection and correction code with address parity bits
US5881072A (en) * 1996-06-28 1999-03-09 International Business Machines Corporation Method of detecting error correction devices on plug-compatible memory modules
US6785837B1 (en) 2000-11-20 2004-08-31 International Business Machines Corporation Fault tolerant memory system utilizing memory arrays with hard error detection
US6691276B2 (en) * 2001-06-25 2004-02-10 Intel Corporation Method for detecting and correcting failures in a memory system
US6941493B2 (en) * 2002-02-27 2005-09-06 Sun Microsystems, Inc. Memory subsystem including an error detection mechanism for address and control signals
US20030163769A1 (en) * 2002-02-27 2003-08-28 Sun Microsystems, Inc. Memory module including an error detection mechanism for address and control signals
US7093188B2 (en) * 2002-04-05 2006-08-15 Alion Science And Technology Corp. Decoding method and apparatus
EP1376358A1 (en) * 2002-06-20 2004-01-02 STMicroelectronics S.r.l. An error control method for a memory device, and a memory device implementing said error control method
US6976194B2 (en) * 2002-06-28 2005-12-13 Sun Microsystems, Inc. Memory/Transmission medium failure handling controller and method
US6996766B2 (en) * 2002-06-28 2006-02-07 Sun Microsystems, Inc. Error detection/correction code which detects and corrects a first failing component and optionally a second failing component
US6973613B2 (en) * 2002-06-28 2005-12-06 Sun Microsystems, Inc. Error detection/correction code which detects and corrects component failure and which provides single bit error correction subsequent to component failure
US6996686B2 (en) * 2002-12-23 2006-02-07 Sun Microsystems, Inc. Memory subsystem including memory modules having multiple banks
US7779285B2 (en) * 2003-02-18 2010-08-17 Oracle America, Inc. Memory system including independent isolated power for each memory module
US7530008B2 (en) 2003-08-08 2009-05-05 Sun Microsystems, Inc. Scalable-chip-correct ECC scheme
US7188296B1 (en) 2003-10-30 2007-03-06 Sun Microsystems, Inc. ECC for component failures using Galois fields
US7116600B2 (en) * 2004-02-19 2006-10-03 Micron Technology, Inc. Memory device having terminals for transferring multiple types of data
US8464093B1 (en) * 2004-09-03 2013-06-11 Extreme Networks, Inc. Memory array error correction
US7451380B2 (en) * 2005-03-03 2008-11-11 International Business Machines Corporation Method for implementing enhanced vertical ECC storage in a dynamic random access memory
US7533303B2 (en) * 2005-04-15 2009-05-12 Hewlett-Packard Development Company, L.P. Method and system for performing system-level correction of memory errors
US7843927B1 (en) 2006-12-22 2010-11-30 Extreme Networks, Inc. Methods, systems, and computer program products for routing packets at a multi-mode layer 3 packet forwarding device
JP4918824B2 (ja) * 2006-08-18 2012-04-18 富士通株式会社 メモリコントローラおよびメモリ制御方法
US8327225B2 (en) 2010-01-04 2012-12-04 Micron Technology, Inc. Error correction in a stacked memory
US8331373B2 (en) * 2010-03-15 2012-12-11 Extreme Networks, Inc. Methods, systems, and computer readable media for automatically selecting between internet protocol switching modes on a per-module basis in a packet forwarding device
TW201212035A (en) * 2010-09-10 2012-03-16 Jmicron Technology Corp Access method of volatile memory and access apparatus of volatile memory
US9946658B2 (en) * 2013-11-22 2018-04-17 Nvidia Corporation Memory interface design having controllable internal and external interfaces for bypassing defective memory
US9772900B2 (en) * 2014-07-10 2017-09-26 Samsung Electronics Co., Ltd. Tiered ECC single-chip and double-chip Chipkill scheme
US9529672B2 (en) * 2014-09-25 2016-12-27 Everspin Technologies Inc. ECC word configuration for system-level ECC compatibility
JP2016081341A (ja) * 2014-10-17 2016-05-16 株式会社デンソー 電子制御装置
US9928138B2 (en) * 2015-02-17 2018-03-27 Toshiba Memory Corporation Memory system
US10180875B2 (en) * 2016-07-08 2019-01-15 Toshiba Memory Corporation Pool-level solid state drive error correction

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697949A (en) * 1970-12-31 1972-10-10 Ibm Error correction system for use with a rotational single-error correction, double-error detection hamming code
JPS5294041A (en) * 1976-02-04 1977-08-08 Hitachi Ltd Error correction system
JPS5381036A (en) * 1976-12-27 1978-07-18 Hitachi Ltd Error correction-detection system
US4506362A (en) * 1978-12-22 1985-03-19 Gould Inc. Systematic memory error detection and correction apparatus and method
JPS592057B2 (ja) * 1979-02-07 1984-01-17 株式会社日立製作所 エラ−訂正・検出方式
JPS56111197A (en) * 1980-02-01 1981-09-02 Fujitsu Ltd Two-bit error correction system
US4371930A (en) * 1980-06-03 1983-02-01 Burroughs Corporation Apparatus for detecting, correcting and logging single bit memory read errors
JPS5843044A (ja) * 1981-09-07 1983-03-12 Fujitsu Ltd デ−タエラ−発生回路
US4464753A (en) * 1981-12-30 1984-08-07 International Business Machines Corporation Two bit symbol SEC/DED code
JPS58139399A (ja) * 1982-02-15 1983-08-18 Hitachi Ltd 半導体記憶装置
JPS58215796A (ja) * 1982-06-07 1983-12-15 Nec Corp エラ−制御方式
US4458349A (en) * 1982-06-16 1984-07-03 International Business Machines Corporation Method for storing data words in fault tolerant memory to recover uncorrectable errors
JPS59132500A (ja) * 1983-01-19 1984-07-30 Nec Corp 2ビツト誤り訂正方式
US4608687A (en) * 1983-09-13 1986-08-26 International Business Machines Corporation Bit steering apparatus and method for correcting errors in stored data, storing the address of the corrected data and using the address to maintain a correct data condition
DE3482509D1 (de) * 1984-12-28 1990-07-19 Ibm Geraet zum korrigieren von fehlern in speichern.
US4661955A (en) * 1985-01-18 1987-04-28 Ibm Corporation Extended error correction for package error correction codes
JPS6273500A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 半導体記憶装置
US4726021A (en) * 1985-04-17 1988-02-16 Hitachi, Ltd. Semiconductor memory having error correcting means
JPS629442A (ja) * 1985-07-05 1987-01-17 Nec Corp 誤り検出回路
US4689792A (en) * 1985-09-03 1987-08-25 Texas Instruments Incorporated Self test semiconductor memory with error correction capability
JPS6266354A (ja) * 1985-09-18 1987-03-25 Nec Corp 記憶装置
JPH071640B2 (ja) * 1987-06-03 1995-01-11 三菱電機株式会社 半導体記憶装置の欠陥救済装置
JP2946528B2 (ja) * 1989-05-15 1999-09-06 日本電気株式会社 音声符号化復号化方法及びその装置

Also Published As

Publication number Publication date
SG44390A1 (en) 1997-12-19
AU4939390A (en) 1990-09-13
DE69026743D1 (de) 1996-06-05
KR920005297B1 (ko) 1992-06-29
EP0386462B1 (en) 1996-05-01
MY105251A (en) 1994-09-30
US5058115A (en) 1991-10-15
NZ232458A (en) 1992-03-26
DE69026743T2 (de) 1996-11-07
BR9001125A (pt) 1991-03-05
AU623490B2 (en) 1992-05-14
JPH02278449A (ja) 1990-11-14
EP0386462A2 (en) 1990-09-12
CA2002362A1 (en) 1990-09-10
EP0386462A3 (en) 1991-10-23
CN1016009B (zh) 1992-03-25
CN1045472A (zh) 1990-09-19
JPH0743678B2 (ja) 1995-05-15
CA2002362C (en) 1994-02-01
AR243288A1 (es) 1993-07-30

Similar Documents

Publication Publication Date Title
KR900014997A (ko) 고장 방지 컴퓨터 메모리 시스템
CA1179060A (en) Semiconductor memory device
KR910010534A (ko) 반도체 기억장치의 용장회로
KR900008526A (ko) 반도체 기억장치
DE3587143D1 (de) Halbleiterspeichergeraet mit fehlererkennung/korrekturfunktion.
KR960019319A (ko) 반도체 메모리 장치의 리던던시 회로 및 그 방법
US3898443A (en) Memory fault correction system
KR930001239A (ko) 반도체 기억장치
JP2669303B2 (ja) ビットエラー訂正機能付き半導体メモリ
KR850008566A (ko) 대치용장 회로를 가진 반도체집적 회로
KR960012032A (ko) 반도체 기억장치
KR900014998A (ko) 고장 방지 컴퓨터 메모리 시스템
KR840003496A (ko) 메모리 시스템
KR930003164A (ko) 반도체메모리 리던던시 장치
JP2642094B2 (ja) 半導体記憶装置
KR910008568A (ko) 퍼스널 컴퓨터 패리티 체크 시스템
JP2001167002A (ja) 電子ディスク装置の書き込み/読み出し制御方法及びその装置
JPS58141498A (ja) 半導体メモリ装置
JPH06110721A (ja) メモリ制御装置
JPS5693196A (en) Error detecting system of checking circuit
JPS5637899A (en) Memory malfunction detection system
JPH023198A (ja) 故障検出回路内蔵型メモリ素子
RU2028677C1 (ru) Запоминающее устройство с динамическим резервированием
JP3022792B2 (ja) 半導体集積回路装置
JPH023196A (ja) 高信頼性メモリ素子

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060522

Year of fee payment: 15

LAPS Lapse due to unpaid annual fee