DE3587143D1 - Halbleiterspeichergeraet mit fehlererkennung/korrekturfunktion. - Google Patents
Halbleiterspeichergeraet mit fehlererkennung/korrekturfunktion.Info
- Publication number
- DE3587143D1 DE3587143D1 DE8585115196T DE3587143T DE3587143D1 DE 3587143 D1 DE3587143 D1 DE 3587143D1 DE 8585115196 T DE8585115196 T DE 8585115196T DE 3587143 T DE3587143 T DE 3587143T DE 3587143 D1 DE3587143 D1 DE 3587143D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- terminal
- signal
- high voltage
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59256150A JPS61134988A (ja) | 1984-12-04 | 1984-12-04 | 半導体メモリにおける誤り検出訂正機能制御系 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3587143D1 true DE3587143D1 (de) | 1993-04-08 |
DE3587143T2 DE3587143T2 (de) | 1993-06-09 |
Family
ID=17288598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585115196T Expired - Lifetime DE3587143T2 (de) | 1984-12-04 | 1985-11-29 | Halbleiterspeichergeraet mit fehlererkennung/korrekturfunktion. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4706249A (de) |
EP (1) | EP0184737B1 (de) |
JP (1) | JPS61134988A (de) |
DE (1) | DE3587143T2 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62251949A (ja) * | 1986-04-25 | 1987-11-02 | Mitsubishi Electric Corp | 記憶装置の誤り訂正方法 |
US4918385A (en) * | 1987-05-18 | 1990-04-17 | Hewlett-Packard Company | Method and process for testing the reliability of integrated circuit (IC) chips and novel IC circuitry for accomplishing same |
JPH01196647A (ja) * | 1988-01-31 | 1989-08-08 | Nec Corp | 誤り訂正機能を有する記憶装置 |
US4989210A (en) * | 1988-08-30 | 1991-01-29 | Unisys Corporation | Pipelined address check bit stack controller |
US5228046A (en) * | 1989-03-10 | 1993-07-13 | International Business Machines | Fault tolerant computer memory systems and components employing dual level error correction and detection with disablement feature |
US5157670A (en) * | 1989-12-04 | 1992-10-20 | Avasem Corporation | Error correction code interruption system |
US5173905A (en) * | 1990-03-29 | 1992-12-22 | Micron Technology, Inc. | Parity and error correction coding on integrated circuit addresses |
KR950008789B1 (ko) * | 1992-07-30 | 1995-08-08 | 삼성전자주식회사 | 멀티-이씨씨(ecc)회로를 내장하는 반도체 메모리 장치 |
US5367526A (en) * | 1993-06-22 | 1994-11-22 | Kong Edmund Y | Memory module, parity bit emulator, and associated method for parity bit emulation |
JP2669303B2 (ja) * | 1993-08-03 | 1997-10-27 | 日本電気株式会社 | ビットエラー訂正機能付き半導体メモリ |
DE69526279T2 (de) * | 1994-02-22 | 2002-10-02 | Siemens Ag | Flexible Fehlerkorrekturcode/Paritätsbit-Architektur |
US5535226A (en) * | 1994-05-31 | 1996-07-09 | International Business Machines Corporation | On-chip ECC status |
JP3106947B2 (ja) * | 1996-02-28 | 2000-11-06 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US6070262A (en) * | 1997-04-04 | 2000-05-30 | International Business Machines Corporation | Reconfigurable I/O DRAM |
DE19804035A1 (de) * | 1998-02-02 | 1999-08-05 | Siemens Ag | Integrierter Speicher |
JP4074029B2 (ja) * | 1999-06-28 | 2008-04-09 | 株式会社東芝 | フラッシュメモリ |
US7032142B2 (en) * | 2001-11-22 | 2006-04-18 | Fujitsu Limited | Memory circuit having parity cell array |
US7099221B2 (en) | 2004-05-06 | 2006-08-29 | Micron Technology, Inc. | Memory controller method and system compensating for memory cell data losses |
US20060010339A1 (en) | 2004-06-24 | 2006-01-12 | Klein Dean A | Memory system and method having selective ECC during low power refresh |
US7340668B2 (en) | 2004-06-25 | 2008-03-04 | Micron Technology, Inc. | Low power cost-effective ECC memory system and method |
US7116602B2 (en) | 2004-07-15 | 2006-10-03 | Micron Technology, Inc. | Method and system for controlling refresh to avoid memory cell data losses |
US6965537B1 (en) | 2004-08-31 | 2005-11-15 | Micron Technology, Inc. | Memory system and method using ECC to achieve low power refresh |
JP4695385B2 (ja) | 2004-11-30 | 2011-06-08 | 株式会社東芝 | メモリカードおよびカードコントローラ |
KR100694407B1 (ko) * | 2005-04-21 | 2007-03-12 | 주식회사 하이닉스반도체 | 불량 셀 교정 회로를 포함하는 불휘발성 강유전체 메모리장치 |
US20070061669A1 (en) * | 2005-08-30 | 2007-03-15 | Major Karl L | Method, device and system for detecting error correction defects |
US7894289B2 (en) | 2006-10-11 | 2011-02-22 | Micron Technology, Inc. | Memory system and method using partial ECC to achieve low power refresh and fast access to data |
US7900120B2 (en) | 2006-10-18 | 2011-03-01 | Micron Technology, Inc. | Memory system and method using ECC with flag bit to identify modified data |
JP5042766B2 (ja) * | 2007-10-03 | 2012-10-03 | 日立オートモティブシステムズ株式会社 | 制御装置、および制御装置のメモリ初期化方法 |
JP2009093714A (ja) | 2007-10-04 | 2009-04-30 | Panasonic Corp | 半導体記憶装置 |
JP4856110B2 (ja) * | 2008-03-01 | 2012-01-18 | 株式会社東芝 | チェンサーチ装置およびチェンサーチ方法 |
US8392779B2 (en) * | 2008-04-25 | 2013-03-05 | Qimonda Ag | Interface voltage adjustment based on error detection |
KR101668934B1 (ko) * | 2012-03-12 | 2016-10-28 | 인텔 코포레이션 | 분배된 코드워드 부분들 |
US10908996B2 (en) | 2019-02-22 | 2021-02-02 | Intel Corporation | Distribution of a codeword across individual storage units to reduce the bit error rate |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3836957A (en) * | 1973-06-26 | 1974-09-17 | Ibm | Data storage system with deferred error detection |
US4058851A (en) * | 1976-10-18 | 1977-11-15 | Sperry Rand Corporation | Conditional bypass of error correction for dual memory access time selection |
JPS592057B2 (ja) * | 1979-02-07 | 1984-01-17 | 株式会社日立製作所 | エラ−訂正・検出方式 |
JPS5622278A (en) * | 1979-07-27 | 1981-03-02 | Fujitsu Ltd | Decoder selection system |
JPS5622294A (en) * | 1979-07-31 | 1981-03-02 | Nippon Telegr & Teleph Corp <Ntt> | Memory circuit |
JPS5650357A (en) * | 1979-09-29 | 1981-05-07 | Canon Inc | Developing method |
US4336611A (en) * | 1979-12-03 | 1982-06-22 | Honeywell Information Systems Inc. | Error correction apparatus and method |
US4412314A (en) * | 1980-06-02 | 1983-10-25 | Mostek Corporation | Semiconductor memory for use in conjunction with error detection and correction circuit |
JPS573164A (en) * | 1980-06-04 | 1982-01-08 | Nippon Denso Co Ltd | Microcomputer control device |
JPS5774893A (en) * | 1980-10-27 | 1982-05-11 | Nec Corp | Storage device |
US4493081A (en) * | 1981-06-26 | 1985-01-08 | Computer Automation, Inc. | Dynamic memory with error correction on refresh |
JPS5968900A (ja) * | 1982-10-13 | 1984-04-18 | Nippon Telegr & Teleph Corp <Ntt> | メモリ集積回路 |
JPS6011952A (ja) * | 1983-07-01 | 1985-01-22 | Mitsubishi Electric Corp | 誤り訂正機構付半導体メモリ装置 |
JPS60173644A (ja) * | 1984-02-13 | 1985-09-07 | Fujitsu Ltd | 半導体記憶装置 |
-
1984
- 1984-12-04 JP JP59256150A patent/JPS61134988A/ja active Pending
-
1985
- 1985-11-29 EP EP85115196A patent/EP0184737B1/de not_active Expired - Lifetime
- 1985-11-29 DE DE8585115196T patent/DE3587143T2/de not_active Expired - Lifetime
- 1985-12-03 US US06/804,177 patent/US4706249A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0184737B1 (de) | 1993-03-03 |
DE3587143T2 (de) | 1993-06-09 |
EP0184737A2 (de) | 1986-06-18 |
EP0184737A3 (en) | 1988-09-14 |
JPS61134988A (ja) | 1986-06-23 |
US4706249A (en) | 1987-11-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |