KR900008518A - 반도체 기억장치 및 그 결함구제방법 - Google Patents
반도체 기억장치 및 그 결함구제방법Info
- Publication number
- KR900008518A KR900008518A KR1019890015454A KR890015454A KR900008518A KR 900008518 A KR900008518 A KR 900008518A KR 1019890015454 A KR1019890015454 A KR 1019890015454A KR 890015454 A KR890015454 A KR 890015454A KR 900008518 A KR900008518 A KR 900008518A
- Authority
- KR
- South Korea
- Prior art keywords
- memory device
- semiconductor memory
- relief method
- defect relief
- defect
- Prior art date
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
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- G—PHYSICS
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- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
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- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H01L2924/01075—Rhenium [Re]
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- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/14—Integrated circuits
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-277132 | 1988-11-01 | ||
JP63277132A JP2707516B2 (ja) | 1988-11-01 | 1988-11-01 | ダイナミック型ram |
JP63-279239 | 1988-11-07 | ||
JP63279239A JPH03102695A (ja) | 1988-11-07 | 1988-11-07 | 半導体装置 |
JP1-14423 | 1989-01-24 | ||
JP1014423A JPH02195596A (ja) | 1989-01-24 | 1989-01-24 | 半導体集積回路装置 |
JP1065840A JP2762292B2 (ja) | 1989-03-20 | 1989-03-20 | 半導体記憶装置 |
JP1-65840 | 1989-03-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900008518A true KR900008518A (ko) | 1990-06-03 |
KR0141495B1 KR0141495B1 (ko) | 1998-07-15 |
Family
ID=27456194
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890015454A KR0141495B1 (ko) | 1988-11-01 | 1989-10-26 | 반도체 기억장치 및 그 결함구제방법 |
KR1019940027362A KR0143876B1 (ko) | 1988-11-01 | 1994-10-26 | 반도체기억 장치 및 그 결함구제방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940027362A KR0143876B1 (ko) | 1988-11-01 | 1994-10-26 | 반도체기억 장치 및 그 결함구제방법 |
Country Status (2)
Country | Link |
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US (3) | US5602771A (ko) |
KR (2) | KR0141495B1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR19990050806A (ko) * | 1997-12-17 | 1999-07-05 | 윤종용 | 불 휘발성 메모리 장치 |
KR100524001B1 (ko) * | 1997-03-24 | 2006-01-27 | 가부시끼가이샤 히다치 세이사꾸쇼 | 다이나믹형 램 |
KR100804895B1 (ko) * | 2005-06-30 | 2008-02-20 | 세이코 엡슨 가부시키가이샤 | 표시 장치 및 전자 기기 |
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US6212089B1 (en) * | 1996-03-19 | 2001-04-03 | Hitachi, Ltd. | Semiconductor memory device and defect remedying method thereof |
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GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
GB9007790D0 (en) * | 1990-04-06 | 1990-06-06 | Lines Valerie L | Dynamic memory wordline driver scheme |
US5822256A (en) * | 1994-09-06 | 1998-10-13 | Intel Corporation | Method and circuitry for usage of partially functional nonvolatile memory |
US5796673A (en) | 1994-10-06 | 1998-08-18 | Mosaid Technologies Incorporated | Delay locked loop implementation in a synchronous dynamic random access memory |
US5880987A (en) * | 1997-07-14 | 1999-03-09 | Micron Technology, Inc. | Architecture and package orientation for high speed memory devices |
US6560680B2 (en) | 1998-01-21 | 2003-05-06 | Micron Technology, Inc. | System controller with Integrated low latency memory using non-cacheable memory physically distinct from main memory |
US6397299B1 (en) | 1998-01-21 | 2002-05-28 | Micron Technology, Inc. | Reduced latency memory configuration method using non-cacheable memory physically distinct from main memory |
JP3996267B2 (ja) * | 1998-05-12 | 2007-10-24 | エルピーダメモリ株式会社 | 半導体記憶装置 |
US6115300A (en) * | 1998-11-03 | 2000-09-05 | Silicon Access Technology, Inc. | Column redundancy based on column slices |
KR100464947B1 (ko) | 1998-12-30 | 2005-05-20 | 주식회사 하이닉스반도체 | 디램의리프레시방법 |
JP3540190B2 (ja) * | 1999-03-15 | 2004-07-07 | 日本電気株式会社 | 半導体記憶装置 |
US6456152B1 (en) * | 1999-05-17 | 2002-09-24 | Hitachi, Ltd. | Charge pump with improved reliability |
JP3434741B2 (ja) * | 1999-07-15 | 2003-08-11 | エヌイーシーマイクロシステム株式会社 | 半導体記憶装置 |
JP2001184881A (ja) * | 1999-12-28 | 2001-07-06 | Toshiba Corp | 不揮発性半導体メモリの読み出し回路 |
DE10055001A1 (de) * | 2000-11-07 | 2002-05-16 | Infineon Technologies Ag | Speicheranordnung mit einem zentralen Anschlussfeld |
US6449203B1 (en) * | 2001-03-08 | 2002-09-10 | Micron Technology, Inc. | Refresh controller and address remapping circuit and method for dual mode full/reduced density DRAMs |
US6751159B2 (en) * | 2001-10-26 | 2004-06-15 | Micron Technology, Inc. | Memory device operable in either a high-power, full-page size mode or a low-power, reduced-page size mode |
US6838331B2 (en) * | 2002-04-09 | 2005-01-04 | Micron Technology, Inc. | Method and system for dynamically operating memory in a power-saving error correction mode |
US6751143B2 (en) * | 2002-04-11 | 2004-06-15 | Micron Technology, Inc. | Method and system for low power refresh of dynamic random access memories |
JP2004040447A (ja) * | 2002-07-03 | 2004-02-05 | Toyota Industries Corp | Agc回路 |
US7047471B2 (en) * | 2003-03-03 | 2006-05-16 | Hewlett-Packard Development Company, L.P. | Voltage margin testing of bladed servers |
US7443836B2 (en) * | 2003-06-16 | 2008-10-28 | Intel Corporation | Processing a data packet |
KR100569585B1 (ko) * | 2003-12-05 | 2006-04-10 | 주식회사 하이닉스반도체 | 내부 전원 드라이버 제어 회로 |
US20140002580A1 (en) * | 2012-06-29 | 2014-01-02 | Monkeymedia, Inc. | Portable proprioceptive peripatetic polylinear video player |
US10171043B2 (en) * | 2015-10-05 | 2019-01-01 | Telefonaktiebolaget Lm Ericsson (Publ) | Amplification device incorporating limiting |
US11101015B2 (en) | 2018-12-17 | 2021-08-24 | Micron Technology, Inc. | Multi-dimensional usage space testing of memory components |
US10910081B2 (en) * | 2018-12-17 | 2021-02-02 | Micron Technology, Inc. | Management of test resources to perform reliability testing of memory components |
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JPS5248441A (en) * | 1975-05-28 | 1977-04-18 | Hitachi Ltd | Memory system |
JPS57203290A (en) * | 1981-06-09 | 1982-12-13 | Mitsubishi Electric Corp | Ic memory |
JPS58137191A (ja) * | 1982-02-08 | 1983-08-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリ |
JPH0640573B2 (ja) * | 1983-12-26 | 1994-05-25 | 株式会社日立製作所 | 半導体集積回路装置 |
US4688197A (en) * | 1983-12-30 | 1987-08-18 | Texas Instruments Incorporated | Control of data access to memory for improved video system |
US4648032A (en) * | 1985-02-13 | 1987-03-03 | International Business Machines Corporation | Dual purpose screen/memory refresh counter |
JPS6150281A (ja) * | 1985-07-26 | 1986-03-12 | Hitachi Ltd | メモリ |
JPS6228995A (ja) * | 1985-07-29 | 1987-02-06 | Nec Corp | メモリ集積回路 |
US4754425A (en) * | 1985-10-18 | 1988-06-28 | Gte Communication Systems Corporation | Dynamic random access memory refresh circuit selectively adapted to different clock frequencies |
JPS62146489A (ja) * | 1985-12-20 | 1987-06-30 | Nec Corp | ダイナミツクメモリ |
JPS62241198A (ja) * | 1986-04-14 | 1987-10-21 | Hitachi Ltd | ダイナミツク型ram |
JP2511415B2 (ja) * | 1986-06-27 | 1996-06-26 | 沖電気工業株式会社 | 半導体装置 |
JPS6355797A (ja) * | 1986-08-27 | 1988-03-10 | Fujitsu Ltd | メモリ |
JPS63157397A (ja) * | 1986-12-22 | 1988-06-30 | Matsushita Electronics Corp | 半導体メモリ |
JPH0821682B2 (ja) * | 1987-04-24 | 1996-03-04 | 株式会社日立製作所 | 半導体装置の製造方法 |
US5196910A (en) * | 1987-04-24 | 1993-03-23 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
KR960009249B1 (ko) * | 1987-04-24 | 1996-07-16 | 미다 가쓰시게 | 반도체 메모리 |
US4956811A (en) * | 1987-09-16 | 1990-09-11 | Hitachi, Ltd. | Semiconductor memory |
JPH0793003B2 (ja) * | 1988-09-01 | 1995-10-09 | 三菱電機株式会社 | ダイナミックランダムアクセスメモリ装置およびその動作方法 |
US4933907A (en) * | 1987-12-03 | 1990-06-12 | Mitsubishi Denki Kabushiki Kaisha | Dynamic random access memory device and operating method therefor |
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KR0158868B1 (ko) * | 1988-09-20 | 1998-12-01 | 미다 가쓰시게 | 반도체장치 |
US5579256A (en) * | 1988-11-01 | 1996-11-26 | Hitachi, Ltd. | Semiconductor memory device and defect remedying method thereof |
JPH05175409A (ja) * | 1991-12-24 | 1993-07-13 | Sony Corp | 樹脂封止型半導体装置 |
JPH0668667A (ja) * | 1992-08-19 | 1994-03-11 | Hitachi Ltd | 半導体集積回路装置 |
-
1989
- 1989-10-26 KR KR1019890015454A patent/KR0141495B1/ko not_active IP Right Cessation
-
1993
- 1993-12-01 US US08/159,621 patent/US5602771A/en not_active Expired - Lifetime
-
1994
- 1994-10-26 KR KR1019940027362A patent/KR0143876B1/ko not_active IP Right Cessation
-
1998
- 1998-09-15 US US09/153,462 patent/US6049500A/en not_active Expired - Lifetime
-
1999
- 1999-07-27 US US09/361,203 patent/US6160744A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100524001B1 (ko) * | 1997-03-24 | 2006-01-27 | 가부시끼가이샤 히다치 세이사꾸쇼 | 다이나믹형 램 |
KR19990050806A (ko) * | 1997-12-17 | 1999-07-05 | 윤종용 | 불 휘발성 메모리 장치 |
KR100804895B1 (ko) * | 2005-06-30 | 2008-02-20 | 세이코 엡슨 가부시키가이샤 | 표시 장치 및 전자 기기 |
Also Published As
Publication number | Publication date |
---|---|
US5602771A (en) | 1997-02-11 |
KR0141495B1 (ko) | 1998-07-15 |
US6160744A (en) | 2000-12-12 |
US6049500A (en) | 2000-04-11 |
KR0143876B1 (ko) | 1998-08-17 |
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