KR900008518A - 반도체 기억장치 및 그 결함구제방법 - Google Patents

반도체 기억장치 및 그 결함구제방법

Info

Publication number
KR900008518A
KR900008518A KR1019890015454A KR890015454A KR900008518A KR 900008518 A KR900008518 A KR 900008518A KR 1019890015454 A KR1019890015454 A KR 1019890015454A KR 890015454 A KR890015454 A KR 890015454A KR 900008518 A KR900008518 A KR 900008518A
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
relief method
defect relief
defect
Prior art date
Application number
KR1019890015454A
Other languages
English (en)
Other versions
KR0141495B1 (ko
Inventor
가즈히꼬 가지가야
가즈유끼 미야자와
마나부 쯔노자끼
가즈요시 오시마
다까시 야마자끼
유지 사까이
지로 사와다
야스노리 야마구찌
데쯔로 마쯔모또
신지 우도
히로시 요시오까
히로까즈 사이또
미쯔히로 다까노
마꼬또 모리노
신이찌 미야따께
에이지 미야모또
야스히로 가사마
아끼라 엔도
료이찌 호리
쥰 에도
마사시 호리구찌
신이찌 이께나가
아쯔시 구마따
Original Assignee
가부시끼가이샤 히다찌세이사꾸쇼
히다찌초엘에스아이엔지니어링 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63277132A external-priority patent/JP2707516B2/ja
Priority claimed from JP63279239A external-priority patent/JPH03102695A/ja
Priority claimed from JP1014423A external-priority patent/JPH02195596A/ja
Priority claimed from JP1065840A external-priority patent/JP2762292B2/ja
Application filed by 가부시끼가이샤 히다찌세이사꾸쇼, 히다찌초엘에스아이엔지니어링 가부시끼가이샤 filed Critical 가부시끼가이샤 히다찌세이사꾸쇼
Publication of KR900008518A publication Critical patent/KR900008518A/ko
Application granted granted Critical
Publication of KR0141495B1 publication Critical patent/KR0141495B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
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    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
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    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
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    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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KR1019890015454A 1988-11-01 1989-10-26 반도체 기억장치 및 그 결함구제방법 KR0141495B1 (ko)

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JP63277132A JP2707516B2 (ja) 1988-11-01 1988-11-01 ダイナミック型ｒａｍ
JP63-277132 1988-11-01
JP63279239A JPH03102695A (ja) 1988-11-07 1988-11-07 半導体装置
JP63-279239 1988-11-07
JP1014423A JPH02195596A (ja) 1989-01-24 1989-01-24 半導体集積回路装置
JP1-14423 1989-01-24
JP1065840A JP2762292B2 (ja) 1989-03-20 1989-03-20 半導体記憶装置
JP1-65840 1989-03-20

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KR100524001B1 (ko) * 1997-03-24 2006-01-27 가부시끼가이샤 히다치 세이사꾸쇼 다이나믹형 램
KR19990050806A (ko) * 1997-12-17 1999-07-05 윤종용 불 휘발성 메모리 장치
KR100804895B1 (ko) * 2005-06-30 2008-02-20 세이코 엡슨 가부시키가이샤 표시 장치 및 전자 기기

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