KR880005624A - 반도체메모리와 그 시험방법 - Google Patents

반도체메모리와 그 시험방법

Info

Publication number
KR880005624A
KR880005624A KR1019870011614A KR870011614A KR880005624A KR 880005624 A KR880005624 A KR 880005624A KR 1019870011614 A KR1019870011614 A KR 1019870011614A KR 870011614 A KR870011614 A KR 870011614A KR 880005624 A KR880005624 A KR 880005624A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
test method
test
semiconductor
memory
Prior art date
Application number
KR1019870011614A
Other languages
English (en)
Other versions
KR900004312B1 (ko
Inventor
츠네오 마츠무라
츠네오 마노
준조 야마다
준이치 이노우에
Original Assignee
니폰덴신덴와 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61247641A external-priority patent/JPH0817040B2/ja
Priority claimed from JP62159843A external-priority patent/JP2670049B2/ja
Priority claimed from JP62185382A external-priority patent/JPS6430099A/ja
Priority claimed from JP62203099A external-priority patent/JPS6446300A/ja
Priority claimed from JP62253516A external-priority patent/JPH0196899A/ja
Application filed by 니폰덴신덴와 가부시키가이샤 filed Critical 니폰덴신덴와 가부시키가이샤
Publication of KR880005624A publication Critical patent/KR880005624A/ko
Application granted granted Critical
Publication of KR900004312B1 publication Critical patent/KR900004312B1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30Accessing single arrays
    • G11C29/34Accessing multiple bits simultaneously
KR1019870011614A 1986-10-20 1987-10-20 반도체메모리와 그 시험방법 KR900004312B1 (ko)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
JP247641 1986-10-20
JP61247641A JPH0817040B2 (ja) 1986-10-20 1986-10-20 半導体メモリ
JP62159843A JP2670049B2 (ja) 1987-06-29 1987-06-29 半導体メモリの試験方法
JP159843 1987-06-29
JP17307787 1987-07-13
JP173077 1987-07-13
JP62185382A JPS6430099A (en) 1987-07-27 1987-07-27 Method for testing semiconductor memory having redundant constitution
JP185382 1987-07-27
JP203099 1987-08-17
JP62203099A JPS6446300A (en) 1987-08-17 1987-08-17 Semiconductor memory
JP208002 1987-08-21
JP20800287 1987-08-21
JP62253516A JPH0196899A (ja) 1987-10-09 1987-10-09 半導体メモリ
JP253516 1987-10-09

Publications (2)

Publication Number Publication Date
KR880005624A true KR880005624A (ko) 1988-06-29
KR900004312B1 KR900004312B1 (ko) 1990-06-20

Family

ID=27566214

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870011614A KR900004312B1 (ko) 1986-10-20 1987-10-20 반도체메모리와 그 시험방법

Country Status (4)

Country Link
US (1) US5400342A (ko)
EP (1) EP0264893B1 (ko)
KR (1) KR900004312B1 (ko)
DE (1) DE3751002T2 (ko)

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KR100387014B1 (ko) * 2000-05-19 2003-06-12 가부시키가이샤 아드반테스트 반도체 시험 장치

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JP3816560B2 (ja) * 1995-12-25 2006-08-30 株式会社ルネサステクノロジ 連想メモリ回路のテスト方法及び連想メモリ回路のテスト回路
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JP4846128B2 (ja) * 2001-07-12 2011-12-28 ルネサスエレクトロニクス株式会社 半導体装置およびそのテスト方法
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TWI406290B (zh) * 2009-06-26 2013-08-21 Etron Technology Inc 一種字元線缺陷之偵測裝置與方法
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CN105182207B (zh) * 2014-05-30 2020-10-16 国民技术股份有限公司 一种芯片错误注入测试方法及装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100387014B1 (ko) * 2000-05-19 2003-06-12 가부시키가이샤 아드반테스트 반도체 시험 장치

Also Published As

Publication number Publication date
DE3751002T2 (de) 1995-10-05
EP0264893B1 (en) 1995-01-18
KR900004312B1 (ko) 1990-06-20
US5400342A (en) 1995-03-21
EP0264893A2 (en) 1988-04-27
DE3751002D1 (de) 1995-03-02
EP0264893A3 (en) 1991-01-16

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