KR880005624A - 반도체메모리와 그 시험방법 - Google Patents
반도체메모리와 그 시험방법Info
- Publication number
- KR880005624A KR880005624A KR1019870011614A KR870011614A KR880005624A KR 880005624 A KR880005624 A KR 880005624A KR 1019870011614 A KR1019870011614 A KR 1019870011614A KR 870011614 A KR870011614 A KR 870011614A KR 880005624 A KR880005624 A KR 880005624A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor memory
- test method
- test
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/34—Accessing multiple bits simultaneously
Applications Claiming Priority (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP247641 | 1986-10-20 | ||
JP61247641A JPH0817040B2 (ja) | 1986-10-20 | 1986-10-20 | 半導体メモリ |
JP62159843A JP2670049B2 (ja) | 1987-06-29 | 1987-06-29 | 半導体メモリの試験方法 |
JP159843 | 1987-06-29 | ||
JP17307787 | 1987-07-13 | ||
JP173077 | 1987-07-13 | ||
JP62185382A JPS6430099A (en) | 1987-07-27 | 1987-07-27 | Method for testing semiconductor memory having redundant constitution |
JP185382 | 1987-07-27 | ||
JP203099 | 1987-08-17 | ||
JP62203099A JPS6446300A (en) | 1987-08-17 | 1987-08-17 | Semiconductor memory |
JP208002 | 1987-08-21 | ||
JP20800287 | 1987-08-21 | ||
JP62253516A JPH0196899A (ja) | 1987-10-09 | 1987-10-09 | 半導体メモリ |
JP253516 | 1987-10-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880005624A true KR880005624A (ko) | 1988-06-29 |
KR900004312B1 KR900004312B1 (ko) | 1990-06-20 |
Family
ID=27566214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870011614A KR900004312B1 (ko) | 1986-10-20 | 1987-10-20 | 반도체메모리와 그 시험방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5400342A (ko) |
EP (1) | EP0264893B1 (ko) |
KR (1) | KR900004312B1 (ko) |
DE (1) | DE3751002T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100387014B1 (ko) * | 2000-05-19 | 2003-06-12 | 가부시키가이샤 아드반테스트 | 반도체 시험 장치 |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2222461B (en) * | 1988-08-30 | 1993-05-19 | Mitsubishi Electric Corp | On chip testing of semiconductor memory devices |
KR920001081B1 (ko) * | 1989-06-10 | 1992-02-01 | 삼성전자 주식회사 | 램 테스트시 고속기록회로 |
JP2717712B2 (ja) * | 1989-08-18 | 1998-02-25 | 三菱電機株式会社 | 半導体記憶装置 |
JP3253296B2 (ja) * | 1989-12-20 | 2002-02-04 | セイコーエプソン株式会社 | 記憶装置及びデータ処理装置 |
FR2665793B1 (fr) * | 1990-08-10 | 1993-06-18 | Sgs Thomson Microelectronics | Circuit integre de memoire avec redondance et adressage ameliore en mode de test. |
JPH04356799A (ja) * | 1990-08-29 | 1992-12-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2673395B2 (ja) * | 1990-08-29 | 1997-11-05 | 三菱電機株式会社 | 半導体記憶装置およびそのテスト方法 |
JP3237127B2 (ja) * | 1991-04-19 | 2001-12-10 | 日本電気株式会社 | ダイナミックランダムアクセスメモリ装置 |
US5241500A (en) * | 1992-07-29 | 1993-08-31 | International Business Machines Corporation | Method for setting test voltages in a flash write mode |
JP3645578B2 (ja) * | 1992-09-17 | 2005-05-11 | テキサス インスツルメンツ インコーポレイテツド | スマート・メモリの組込み自己検査のための装置と方法 |
JPH06203597A (ja) | 1992-09-25 | 1994-07-22 | Nec Corp | ダイナミックram |
JP3293935B2 (ja) * | 1993-03-12 | 2002-06-17 | 株式会社東芝 | 並列ビットテストモード内蔵半導体メモリ |
JP3346827B2 (ja) * | 1993-05-25 | 2002-11-18 | 三菱電機株式会社 | 同期型半導体記憶装置 |
EP0642137B1 (en) * | 1993-09-01 | 2001-11-28 | Koninklijke Philips Electronics N.V. | Quiescent-current testable RAM |
KR960008824B1 (en) * | 1993-11-17 | 1996-07-05 | Samsung Electronics Co Ltd | Multi bit test circuit and method of semiconductor memory device |
JP3563779B2 (ja) * | 1994-09-13 | 2004-09-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US5461588A (en) * | 1994-11-15 | 1995-10-24 | Digital Equipment Corporation | Memory testing with preservation of in-use data |
US5533194A (en) * | 1994-12-28 | 1996-07-02 | International Business Machines Corporation | Hardware-assisted high speed memory test apparatus and method |
JPH08305638A (ja) * | 1995-05-01 | 1996-11-22 | Nec Corp | Romデータ検査方法 |
JPH0963300A (ja) * | 1995-08-22 | 1997-03-07 | Advantest Corp | 半導体メモリ試験装置のフェイル解析装置 |
JP3865828B2 (ja) | 1995-11-28 | 2007-01-10 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP3816560B2 (ja) * | 1995-12-25 | 2006-08-30 | 株式会社ルネサステクノロジ | 連想メモリ回路のテスト方法及び連想メモリ回路のテスト回路 |
US6072719A (en) * | 1996-04-19 | 2000-06-06 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
JP3601913B2 (ja) * | 1996-08-30 | 2004-12-15 | 株式会社東芝 | メモリ解析装置及びメモリ解析方法 |
US6009536A (en) * | 1996-09-20 | 1999-12-28 | Micron Electronics, Inc. | Method for using fuse identification codes for masking bad bits on memory modules |
US5826006A (en) * | 1996-09-30 | 1998-10-20 | International Business Machines Corporation | Method and apparatus for testing the data output system of a memory system |
US5966388A (en) * | 1997-01-06 | 1999-10-12 | Micron Technology, Inc. | High-speed test system for a memory device |
JP2002501654A (ja) | 1997-05-30 | 2002-01-15 | ミクロン テクノロジー,インコーポレイテッド | 256Megダイナミックランダムアクセスメモリ |
US6009026A (en) * | 1997-07-28 | 1999-12-28 | International Business Machines Corporation | Compressed input/output test mode |
US6314527B1 (en) | 1998-03-05 | 2001-11-06 | Micron Technology, Inc. | Recovery of useful areas of partially defective synchronous memory components |
US6332183B1 (en) | 1998-03-05 | 2001-12-18 | Micron Technology, Inc. | Method for recovery of useful areas of partially defective synchronous memory components |
US5936901A (en) * | 1998-03-19 | 1999-08-10 | Micron Technology, Inc. | Shared data lines for memory write and memory test operations |
US6381708B1 (en) | 1998-04-28 | 2002-04-30 | Micron Technology, Inc. | Method for decoding addresses for a defective memory array |
US6381707B1 (en) | 1998-04-28 | 2002-04-30 | Micron Technology, Inc. | System for decoding addresses for a defective memory array |
JP2000021193A (ja) * | 1998-07-01 | 2000-01-21 | Fujitsu Ltd | メモリ試験方法及び装置並びに記憶媒体 |
US6424161B2 (en) * | 1998-09-03 | 2002-07-23 | Micron Technology, Inc. | Apparatus and method for testing fuses |
JP2000156096A (ja) * | 1998-11-20 | 2000-06-06 | Fujitsu Ltd | 半導体記憶装置 |
JP2000182398A (ja) * | 1998-12-15 | 2000-06-30 | Nec Corp | 半導体装置及び半導体装置の試験方法 |
US6496876B1 (en) | 1998-12-21 | 2002-12-17 | Micron Technology, Inc. | System and method for storing a tag to identify a functional storage location in a memory device |
TW444127B (en) * | 1999-08-20 | 2001-07-01 | Taiwan Semiconductor Mfg | Comparing circuit, testing circuit and testing method for the parallel test of DRAM devices |
JP2001126470A (ja) * | 1999-10-26 | 2001-05-11 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6459634B1 (en) | 2000-01-31 | 2002-10-01 | Micron Technology, Inc. | Circuits and methods for testing memory cells along a periphery of a memory array |
US6578157B1 (en) | 2000-03-06 | 2003-06-10 | Micron Technology, Inc. | Method and apparatus for recovery of useful areas of partially defective direct rambus rimm components |
US7269765B1 (en) | 2000-04-13 | 2007-09-11 | Micron Technology, Inc. | Method and apparatus for storing failing part locations in a module |
JP4846128B2 (ja) * | 2001-07-12 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびそのテスト方法 |
FR2854967B1 (fr) * | 2003-05-13 | 2005-08-05 | St Microelectronics Sa | Procede et dispositif d'identification d'un mode de fonctionnement d'un dispositif controle, par exemple un mode test d'une memoire eeprom |
US7184916B2 (en) * | 2003-05-20 | 2007-02-27 | Cray Inc. | Apparatus and method for testing memory cards |
US7320100B2 (en) * | 2003-05-20 | 2008-01-15 | Cray Inc. | Apparatus and method for memory with bit swapping on the fly and testing |
US20050039089A1 (en) * | 2003-08-11 | 2005-02-17 | Elias Gedamu | System and method for analysis of cache array test data |
US20090129185A1 (en) * | 2007-11-19 | 2009-05-21 | Cassels John J | Semiconductor circuits capable of self detecting defects |
US7872902B2 (en) * | 2008-08-18 | 2011-01-18 | Qimonda Ag | Integrated circuit with bit lines positioned in different planes |
US8055958B2 (en) * | 2008-12-11 | 2011-11-08 | Samsung Electronics Co., Ltd. | Replacement data storage circuit storing address of defective memory cell |
TWI406290B (zh) * | 2009-06-26 | 2013-08-21 | Etron Technology Inc | 一種字元線缺陷之偵測裝置與方法 |
JP2011048879A (ja) * | 2009-08-27 | 2011-03-10 | Renesas Electronics Corp | 半導体装置 |
US8832508B2 (en) * | 2010-11-18 | 2014-09-09 | Advanced Micro Devices, Inc. | Apparatus and methods for testing writability and readability of memory cell arrays |
KR20140042312A (ko) * | 2012-09-28 | 2014-04-07 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 동작 방법 |
CN105182207B (zh) * | 2014-05-30 | 2020-10-16 | 国民技术股份有限公司 | 一种芯片错误注入测试方法及装置 |
JP6868466B2 (ja) * | 2017-05-25 | 2021-05-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10754580B2 (en) | 2017-10-23 | 2020-08-25 | Micron Technology, Inc. | Virtual partition management in a memory device |
KR20220014590A (ko) * | 2020-07-29 | 2022-02-07 | 삼성전자주식회사 | 결함 검출 회로를 포함하는 반도체 장치 및 반도체 장치의 결함 검출 방법 |
CN114283870B (zh) * | 2022-01-14 | 2023-06-30 | 长鑫存储技术有限公司 | 测试方法、装置、计算机设备及存储介质 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4055754A (en) | 1975-12-22 | 1977-10-25 | Chesley Gilman D | Memory device and method of testing the same |
IE54406B1 (en) * | 1980-12-23 | 1989-09-27 | Fujitsu Ltd | Electrically programmable non-colatile semiconductor memory device |
JPS59185097A (ja) * | 1983-04-04 | 1984-10-20 | Oki Electric Ind Co Ltd | 自己診断機能付メモリ装置 |
US4601019B1 (en) * | 1983-08-31 | 1997-09-30 | Texas Instruments Inc | Memory with redundancy |
JPS60115099A (ja) * | 1983-11-25 | 1985-06-21 | Fujitsu Ltd | 半導体記憶装置 |
US4661930A (en) * | 1984-08-02 | 1987-04-28 | Texas Instruments Incorporated | High speed testing of integrated circuit |
US4670878A (en) * | 1984-08-14 | 1987-06-02 | Texas Instruments Incorporated | Column shift circuitry for high speed testing of semiconductor memory devices |
US4654827A (en) * | 1984-08-14 | 1987-03-31 | Texas Instruments Incorporated | High speed testing of semiconductor memory devices |
KR900005666B1 (ko) | 1984-08-30 | 1990-08-03 | 미쓰비시전기 주식회사 | 반도체기억장치 |
US4654849B1 (en) | 1984-08-31 | 1999-06-22 | Texas Instruments Inc | High speed concurrent testing of dynamic read/write memory array |
-
1987
- 1987-10-19 DE DE3751002T patent/DE3751002T2/de not_active Expired - Lifetime
- 1987-10-19 EP EP87115295A patent/EP0264893B1/en not_active Expired - Lifetime
- 1987-10-20 KR KR1019870011614A patent/KR900004312B1/ko not_active IP Right Cessation
-
1992
- 1992-02-14 US US07/837,667 patent/US5400342A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100387014B1 (ko) * | 2000-05-19 | 2003-06-12 | 가부시키가이샤 아드반테스트 | 반도체 시험 장치 |
Also Published As
Publication number | Publication date |
---|---|
DE3751002T2 (de) | 1995-10-05 |
EP0264893B1 (en) | 1995-01-18 |
KR900004312B1 (ko) | 1990-06-20 |
US5400342A (en) | 1995-03-21 |
EP0264893A2 (en) | 1988-04-27 |
DE3751002D1 (de) | 1995-03-02 |
EP0264893A3 (en) | 1991-01-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20070504 Year of fee payment: 18 |
|
EXPY | Expiration of term |