KR20160132982A - 반도체 장치와 그 제작 방법 - Google Patents

반도체 장치와 그 제작 방법 Download PDF

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Publication number
KR20160132982A
KR20160132982A KR1020167028539A KR20167028539A KR20160132982A KR 20160132982 A KR20160132982 A KR 20160132982A KR 1020167028539 A KR1020167028539 A KR 1020167028539A KR 20167028539 A KR20167028539 A KR 20167028539A KR 20160132982 A KR20160132982 A KR 20160132982A
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South Korea
Prior art keywords
insulator
semiconductor
film
electrode
conductor
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KR1020167028539A
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Korean (ko)
Inventor
유타 엔도
코세이 노다
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20160132982A publication Critical patent/KR20160132982A/ko
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    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L27/1225—
    • H01L29/66969—
    • H01L29/78606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020167028539A 2014-03-18 2015-03-03 반도체 장치와 그 제작 방법 Ceased KR20160132982A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014054763 2014-03-18
JPJP-P-2014-054763 2014-03-18
PCT/IB2015/051533 WO2015140656A1 (en) 2014-03-18 2015-03-03 Semiconductor device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
KR20160132982A true KR20160132982A (ko) 2016-11-21

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KR1020167028539A Ceased KR20160132982A (ko) 2014-03-18 2015-03-03 반도체 장치와 그 제작 방법

Country Status (6)

Country Link
US (1) US9871143B2 (enExample)
JP (3) JP6532710B2 (enExample)
KR (1) KR20160132982A (enExample)
SG (1) SG11201606536XA (enExample)
TW (1) TWI650803B (enExample)
WO (1) WO2015140656A1 (enExample)

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KR102481037B1 (ko) 2014-10-01 2022-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선층 및 그 제작 방법
US9812587B2 (en) 2015-01-26 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6650888B2 (ja) 2015-02-06 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
US9660100B2 (en) 2015-02-06 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2016154225A (ja) 2015-02-12 2016-08-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US10403646B2 (en) 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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US9882061B2 (en) 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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TW202316486A (zh) 2015-03-30 2023-04-16 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
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US11189736B2 (en) 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2017085093A (ja) 2015-10-29 2017-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG10201608814YA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the semiconductor device
CN108475491B (zh) 2015-12-18 2021-04-20 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
JP6839986B2 (ja) * 2016-01-20 2021-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
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WO2017144994A1 (ja) * 2016-02-22 2017-08-31 株式会社半導体エネルギー研究所 トランジスタおよびその作製方法、半導体ウエハならびに電子機器
US10147681B2 (en) 2016-12-09 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2020021383A1 (ja) 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 半導体装置
CN112823415A (zh) 2018-10-26 2021-05-18 株式会社半导体能源研究所 半导体装置以及半导体装置的制造方法
US10978563B2 (en) 2018-12-21 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
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