KR20150042125A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR20150042125A
KR20150042125A KR20140057576A KR20140057576A KR20150042125A KR 20150042125 A KR20150042125 A KR 20150042125A KR 20140057576 A KR20140057576 A KR 20140057576A KR 20140057576 A KR20140057576 A KR 20140057576A KR 20150042125 A KR20150042125 A KR 20150042125A
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KR
South Korea
Prior art keywords
region
insulating film
semiconductor device
field plate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20140057576A
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English (en)
Korean (ko)
Inventor
류 카미바바
켄스케 타구치
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20150042125A publication Critical patent/KR20150042125A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

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  • Electrodes Of Semiconductors (AREA)
KR20140057576A 2013-10-10 2014-05-14 반도체장치 Ceased KR20150042125A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-212639 2013-10-10
JP2013212639A JP6168961B2 (ja) 2013-10-10 2013-10-10 半導体装置

Publications (1)

Publication Number Publication Date
KR20150042125A true KR20150042125A (ko) 2015-04-20

Family

ID=52738202

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20140057576A Ceased KR20150042125A (ko) 2013-10-10 2014-05-14 반도체장치

Country Status (5)

Country Link
US (1) US9871109B2 (enExample)
JP (1) JP6168961B2 (enExample)
KR (1) KR20150042125A (enExample)
CN (1) CN104576710B (enExample)
DE (1) DE102014208306B4 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6185440B2 (ja) * 2014-09-16 2017-08-23 株式会社東芝 半導体装置
DE102016120301A1 (de) * 2016-10-25 2018-04-26 Infineon Technologies Ag Leistungshalbleitervorrichtungs-Abschlussstruktur
CN106783970B (zh) * 2016-11-22 2020-05-08 中国电子科技集团公司第五十五研究所 一种射频vdmos晶体管的场板结构及其制备方法
CN107068567B (zh) * 2016-11-22 2020-01-24 中国电子科技集团公司第五十五研究所 一种射频vdmos晶体管的金属栅与场板结构及其制备方法
JP6828472B2 (ja) * 2017-02-01 2021-02-10 富士電機株式会社 半導体装置
JP6438175B1 (ja) * 2017-08-31 2018-12-12 新電元工業株式会社 半導体装置
JP2019054170A (ja) 2017-09-15 2019-04-04 株式会社東芝 半導体装置
JP7024277B2 (ja) 2017-09-20 2022-02-24 株式会社デンソー 半導体装置
CN109713032B (zh) * 2018-12-28 2020-12-18 电子科技大学 一种抗辐射半导体器件终端结构
CN110164955A (zh) * 2019-05-28 2019-08-23 深圳市桦沣实业有限公司 一种横向变掺杂终端结构
KR102633398B1 (ko) * 2021-05-27 2024-02-06 에스케이키파운드리 주식회사 반도체 소자를 위한 딥 트렌치 마스크 레이아웃 설계 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW523816B (en) * 2000-06-16 2003-03-11 Gen Semiconductor Inc Semiconductor trench device with enhanced gate oxide integrity structure
DE10339488B3 (de) * 2003-08-27 2005-04-14 Infineon Technologies Ag Laterales Halbleiterbauelement mit einer wenigstens eine Feldelektrode aufweisenden Driftzone
JP4731816B2 (ja) * 2004-01-26 2011-07-27 三菱電機株式会社 半導体装置
JP2009099863A (ja) * 2007-10-18 2009-05-07 Toshiba Corp 半導体装置、及び半導体装置の製造方法
JP2009164486A (ja) 2008-01-09 2009-07-23 Toyota Motor Corp 縦型ダイオードとその製造方法
JP5391447B2 (ja) 2009-04-06 2014-01-15 三菱電機株式会社 半導体装置およびその製造方法
JP5409247B2 (ja) * 2009-10-13 2014-02-05 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2011100877A (ja) * 2009-11-06 2011-05-19 Toshiba Corp 半導体装置及びその製造方法
JP5489791B2 (ja) * 2010-03-10 2014-05-14 三菱電機株式会社 電力用半導体装置の製造方法
JP5517688B2 (ja) * 2010-03-24 2014-06-11 三菱電機株式会社 半導体装置
JP2011204935A (ja) 2010-03-26 2011-10-13 Mitsubishi Electric Corp 半導体装置とその製造方法
JP2012244071A (ja) 2011-05-23 2012-12-10 Semiconductor Components Industries Llc 絶縁ゲート型半導体装置
US9224852B2 (en) * 2011-08-25 2015-12-29 Alpha And Omega Semiconductor Incorporated Corner layout for high voltage semiconductor devices
JP5640969B2 (ja) * 2011-12-26 2014-12-17 三菱電機株式会社 半導体素子
JP5637154B2 (ja) * 2012-02-22 2014-12-10 トヨタ自動車株式会社 半導体装置
JP5863574B2 (ja) * 2012-06-20 2016-02-16 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
CN104576710B (zh) 2017-12-19
DE102014208306A1 (de) 2015-04-16
DE102014208306B4 (de) 2021-06-17
CN104576710A (zh) 2015-04-29
US20150102452A1 (en) 2015-04-16
JP6168961B2 (ja) 2017-07-26
JP2015076544A (ja) 2015-04-20
US9871109B2 (en) 2018-01-16

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