JP5863574B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5863574B2 JP5863574B2 JP2012139012A JP2012139012A JP5863574B2 JP 5863574 B2 JP5863574 B2 JP 5863574B2 JP 2012139012 A JP2012139012 A JP 2012139012A JP 2012139012 A JP2012139012 A JP 2012139012A JP 5863574 B2 JP5863574 B2 JP 5863574B2
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- 239000004065 semiconductor Substances 0.000 title claims description 166
- 239000010410 layer Substances 0.000 description 39
- 230000015556 catabolic process Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
図1は第1実施形態に係る半導体装置の模式図であり、図(a)は半導体装置のスーパージャンクション構造部の平面模式図、図(b)は図(a)のA−A’断面における断面模式図である。
半導体装置1の作用を説明するために、図2に例示される半導体装置の作用から説明する。まず、半導体装置のオフ時の作用から説明する。
例えば、半導体装置100において、フィールドストップ電極101に代えて、幅広のシールド電極50を備えた場合は、外部チャージによる終端領域81におけるSi表面電界への作用がシールド電極50によって遮蔽される。これにより、空乏層103の伸びの変動が抑制されて、空乏層103の外延103Lが変動し難くなる。例えば、空乏層103の外延103Lは、図3に例示されるごとくシールド電極50の下方で固定される。
図4は第2実施形態に係る半導体装置の断面模式図である。
図5は第3実施形態に係る半導体装置の断面模式図である。
図6は第4実施形態に係る半導体装置の断面模式図である。
図7は第5実施形態に係る半導体装置の断面模式図である。
図8は第6実施形態に係る半導体装置の断面模式図である。
80 素子領域
81 終端領域
10 ドレイン領域
11、15 ドリフト領域
11n n形ピラー領域
12p p形ピラー領域
15u 上面
17 外端
18 表面
20 ベース領域
21 ソース領域
30 ゲート電極
31 ゲート絶縁膜
40、45、46 フィールドプレート電極
41、42 絶縁膜
50 シールド電極
51、52 電極
53 配線層
90 ソース電極
91 ドレイン電極
101 フィールドストップ電極
102 ダイシングライン
103 空乏層
103L 外延ライン
Claims (7)
- 素子領域および前記素子領域を囲む終端領域に設けられた第1導電形の第1半導体領域と、
前記第1半導体領域の上に設けられた第1導電形の第2半導体領域であって、前記終端領域において前記第1半導体領域から前記第2半導体領域に向かう方向に対して略直交する第1の方向に複数設けられた第1部分を有する第2半導体領域と、
前記第2半導体領域に設けられ、前記終端領域において、それぞれが、前記第1の方向において前記複数の第1部分のそれぞれと交互に設けられた第2導電形の複数の第3半導体領域と、
前記素子領域における前記複数の第3半導体領域の少なくとも1つの上に設けられた第2導電形の第4半導体領域と、
前記第4半導体領域の上に設けられた第1導電形の第5半導体領域と、
前記第2半導体領域、前記第4半導体領域、および前記第5半導体領域に第1絶縁膜を介して接する第1電極と、
前記第4半導体領域および前記第5半導体領域に電気的に接続された第2電極と、
前記第1半導体領域に電気的に接続された第3電極と、
前記終端領域に設けられた複数の第4電極であって、前記複数の第4電極のそれぞれは、前記複数の第1部分のそれぞれと、前記複数の第3半導体領域のそれぞれと、の間の直上に第2絶縁膜を介して設けられた複数の第4電極と、
前記第3電極に電気的に接続された第5電極であって、前記複数の第4電極のうち、少なくとも前記素子領域から最も離れた第4電極の上を覆う第5電極と、
を備えた半導体装置。 - 前記複数の第4電極のそれぞれは、前記複数の第1部分のそれぞれと、前記複数の第3半導体領域のそれぞれと、の接合界面の直上に設けられた請求項1記載の半導体装置。
- 前記複数の第4電極のそれぞれは、前記複数の第3半導体領域のそれぞれと、前記素子領域から前記終端領域に向かう第2の方向において前記複数の第3半導体領域のそれぞれと隣り合う前記複数の第1部分のそれぞれと、の間の直上に設けられた請求項1または2に記載の半導体装置。
- 前記第2半導体領域に前記複数の第3半導体領域が並置された構造が前記素子領域から前記終端領域の外端にまで達している請求項1〜3のいずれか1つに記載の半導体装置。
- 前記第2電極と前記第5電極との間に設けられ、前記複数の第4電極の上に第3絶縁膜を介して設けられた複数の第6電極をさらに備えた請求項1〜4のいずれか1つに記載の半導体装置。
- 前記複数の第6電極のそれぞれと前記第3絶縁膜との間に設けられた配線層をさらに備え、前記第1の方向における前記配線層の幅は、前記第1の方向における前記複数の第6電極のそれぞれの幅よりも広い請求項5記載の半導体装置。
- 前記複数の第6電極のそれぞれは、前記第2電極もしくは前記第5電極に電気的に接続されている請求項5または6に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012139012A JP5863574B2 (ja) | 2012-06-20 | 2012-06-20 | 半導体装置 |
CN201210461390.3A CN103515438B (zh) | 2012-06-20 | 2012-11-16 | 半导体装置 |
US13/685,019 US8759938B2 (en) | 2012-06-20 | 2012-11-26 | Semiconductor device |
US14/272,158 US20140284756A1 (en) | 2012-06-20 | 2014-05-07 | Semiconductor device |
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JP2012139012A JP5863574B2 (ja) | 2012-06-20 | 2012-06-20 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2014003233A JP2014003233A (ja) | 2014-01-09 |
JP5863574B2 true JP5863574B2 (ja) | 2016-02-16 |
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JP2012139012A Active JP5863574B2 (ja) | 2012-06-20 | 2012-06-20 | 半導体装置 |
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US (2) | US8759938B2 (ja) |
JP (1) | JP5863574B2 (ja) |
CN (1) | CN103515438B (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2015018951A (ja) * | 2013-07-11 | 2015-01-29 | 株式会社東芝 | 半導体装置 |
JP6168961B2 (ja) * | 2013-10-10 | 2017-07-26 | 三菱電機株式会社 | 半導体装置 |
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JP4940546B2 (ja) | 2004-12-13 | 2012-05-30 | 株式会社デンソー | 半導体装置 |
JP4935192B2 (ja) * | 2006-05-31 | 2012-05-23 | 三菱電機株式会社 | 半導体装置 |
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CN102420240B (zh) * | 2011-07-05 | 2013-09-11 | 上海华虹Nec电子有限公司 | 超级结器件的终端保护结构及制造方法 |
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US20130341751A1 (en) | 2013-12-26 |
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