KR20140012139A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20140012139A
KR20140012139A KR1020137027182A KR20137027182A KR20140012139A KR 20140012139 A KR20140012139 A KR 20140012139A KR 1020137027182 A KR1020137027182 A KR 1020137027182A KR 20137027182 A KR20137027182 A KR 20137027182A KR 20140012139 A KR20140012139 A KR 20140012139A
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KR
South Korea
Prior art keywords
type
region
semiconductor device
mosfet
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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KR1020137027182A
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English (en)
Korean (ko)
Inventor
게이지 와다
다케요시 마스다
미사코 호나가
도루 히요시
Original Assignee
스미토모덴키고교가부시키가이샤
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Publication of KR20140012139A publication Critical patent/KR20140012139A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Electrodes Of Semiconductors (AREA)
KR1020137027182A 2011-06-07 2012-02-07 반도체 장치 Withdrawn KR20140012139A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-126917 2011-06-07
JP2011126917A JP2012253293A (ja) 2011-06-07 2011-06-07 半導体装置
PCT/JP2012/052709 WO2012169224A1 (ja) 2011-06-07 2012-02-07 半導体装置

Publications (1)

Publication Number Publication Date
KR20140012139A true KR20140012139A (ko) 2014-01-29

Family

ID=47292396

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137027182A Withdrawn KR20140012139A (ko) 2011-06-07 2012-02-07 반도체 장치

Country Status (7)

Country Link
US (1) US20120313112A1 (enExample)
EP (1) EP2720269A1 (enExample)
JP (1) JP2012253293A (enExample)
KR (1) KR20140012139A (enExample)
CN (1) CN103503146A (enExample)
TW (1) TW201251023A (enExample)
WO (1) WO2012169224A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5751146B2 (ja) * 2011-11-24 2015-07-22 住友電気工業株式会社 半導体装置およびその製造方法
JP5818099B2 (ja) * 2012-04-27 2015-11-18 国立研究開発法人産業技術総合研究所 半導体装置
JP2014003253A (ja) * 2012-06-21 2014-01-09 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5772842B2 (ja) 2013-01-31 2015-09-02 株式会社デンソー 炭化珪素半導体装置
US9515145B2 (en) * 2013-02-28 2016-12-06 Mitsubishi Electric Corporation Vertical MOSFET device with steady on-resistance
US9012984B2 (en) 2013-03-13 2015-04-21 Cree, Inc. Field effect transistor devices with regrown p-layers
US9142668B2 (en) 2013-03-13 2015-09-22 Cree, Inc. Field effect transistor devices with buried well protection regions
US9240476B2 (en) 2013-03-13 2016-01-19 Cree, Inc. Field effect transistor devices with buried well regions and epitaxial layers
US9306061B2 (en) 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
US11721547B2 (en) * 2013-03-14 2023-08-08 Infineon Technologies Ag Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
JP6284140B2 (ja) * 2013-06-17 2018-02-28 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
US9024328B2 (en) * 2013-07-02 2015-05-05 General Electric Company Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture
US9748341B2 (en) * 2013-07-02 2017-08-29 General Electric Company Metal-oxide-semiconductor (MOS) devices with increased channel periphery
JP5928429B2 (ja) 2013-09-30 2016-06-01 サンケン電気株式会社 半導体装置及びその製造方法
JP2015070192A (ja) * 2013-09-30 2015-04-13 サンケン電気株式会社 半導体装置の製造方法、半導体装置
JP6098474B2 (ja) * 2013-10-24 2017-03-22 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6256148B2 (ja) * 2014-03-27 2018-01-10 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
CN106298926A (zh) * 2015-06-05 2017-01-04 北大方正集团有限公司 一种垂直双扩散金属氧化物半导体晶体管及其制作方法
JP2017059600A (ja) * 2015-09-14 2017-03-23 株式会社東芝 半導体装置及びその製造方法
CN107994074B (zh) * 2016-10-26 2021-06-08 深圳尚阳通科技有限公司 沟槽栅超结器件及其制造方法
CN113097305B (zh) * 2021-03-26 2022-11-08 深圳市金誉半导体股份有限公司 一种场效应管及其制备方法
CN115458604B (zh) * 2022-10-24 2023-06-30 中芯越州集成电路制造(绍兴)有限公司 Mosfet器件及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4843854B2 (ja) * 2001-03-05 2011-12-21 住友電気工業株式会社 Ｍｏｓデバイス
TWI278090B (en) * 2004-10-21 2007-04-01 Int Rectifier Corp Solderable top metal for SiC device
JP4604241B2 (ja) * 2004-11-18 2011-01-05 独立行政法人産業技術総合研究所 炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法
JP2006351744A (ja) * 2005-06-15 2006-12-28 Fuji Electric Holdings Co Ltd 炭化珪素半導体装置の製造方法
JP4564509B2 (ja) * 2007-04-05 2010-10-20 株式会社東芝 電力用半導体素子
JP2009033036A (ja) * 2007-07-30 2009-02-12 Hitachi Ltd 半導体装置及びこれを用いた電気回路装置
US7989882B2 (en) * 2007-12-07 2011-08-02 Cree, Inc. Transistor with A-face conductive channel and trench protecting well region
JP5564781B2 (ja) * 2008-07-07 2014-08-06 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JP5298691B2 (ja) * 2008-07-31 2013-09-25 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
CN102150271B (zh) * 2009-03-27 2014-06-11 住友电气工业株式会社 Mosfet和制造mosfet的方法
CA2739576A1 (en) * 2009-04-10 2010-10-14 Sumitomo Electric Industries, Ltd. Insulated gate field effect transistor
JP5531787B2 (ja) * 2010-05-31 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法

Also Published As

Publication number Publication date
TW201251023A (en) 2012-12-16
US20120313112A1 (en) 2012-12-13
JP2012253293A (ja) 2012-12-20
CN103503146A (zh) 2014-01-08
EP2720269A1 (en) 2014-04-16
WO2012169224A1 (ja) 2012-12-13

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