CN103503146A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN103503146A
CN103503146A CN201280021088.4A CN201280021088A CN103503146A CN 103503146 A CN103503146 A CN 103503146A CN 201280021088 A CN201280021088 A CN 201280021088A CN 103503146 A CN103503146 A CN 103503146A
Authority
CN
China
Prior art keywords
type
semiconductor device
region
mosfet
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280021088.4A
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English (en)
Chinese (zh)
Inventor
和田圭司
增田健良
穗永美纱子
日吉透
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN103503146A publication Critical patent/CN103503146A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Electrodes Of Semiconductors (AREA)
CN201280021088.4A 2011-06-07 2012-02-07 半导体器件 Pending CN103503146A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011126917A JP2012253293A (ja) 2011-06-07 2011-06-07 半導体装置
JP2011-126917 2011-06-07
PCT/JP2012/052709 WO2012169224A1 (ja) 2011-06-07 2012-02-07 半導体装置

Publications (1)

Publication Number Publication Date
CN103503146A true CN103503146A (zh) 2014-01-08

Family

ID=47292396

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280021088.4A Pending CN103503146A (zh) 2011-06-07 2012-02-07 半导体器件

Country Status (7)

Country Link
US (1) US20120313112A1 (enExample)
EP (1) EP2720269A1 (enExample)
JP (1) JP2012253293A (enExample)
KR (1) KR20140012139A (enExample)
CN (1) CN103503146A (enExample)
TW (1) TW201251023A (enExample)
WO (1) WO2012169224A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298926A (zh) * 2015-06-05 2017-01-04 北大方正集团有限公司 一种垂直双扩散金属氧化物半导体晶体管及其制作方法
CN107994074A (zh) * 2016-10-26 2018-05-04 深圳尚阳通科技有限公司 沟槽栅超结器件及其制造方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5751146B2 (ja) * 2011-11-24 2015-07-22 住友電気工業株式会社 半導体装置およびその製造方法
JP5818099B2 (ja) * 2012-04-27 2015-11-18 国立研究開発法人産業技術総合研究所 半導体装置
JP2014003253A (ja) * 2012-06-21 2014-01-09 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5772842B2 (ja) 2013-01-31 2015-09-02 株式会社デンソー 炭化珪素半導体装置
JP5955452B2 (ja) * 2013-02-28 2016-07-20 三菱電機株式会社 半導体装置
US9142668B2 (en) 2013-03-13 2015-09-22 Cree, Inc. Field effect transistor devices with buried well protection regions
US9240476B2 (en) * 2013-03-13 2016-01-19 Cree, Inc. Field effect transistor devices with buried well regions and epitaxial layers
US9306061B2 (en) 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
US9012984B2 (en) 2013-03-13 2015-04-21 Cree, Inc. Field effect transistor devices with regrown p-layers
US11721547B2 (en) * 2013-03-14 2023-08-08 Infineon Technologies Ag Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
JP6284140B2 (ja) * 2013-06-17 2018-02-28 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
US9748341B2 (en) * 2013-07-02 2017-08-29 General Electric Company Metal-oxide-semiconductor (MOS) devices with increased channel periphery
US9024328B2 (en) 2013-07-02 2015-05-05 General Electric Company Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture
JP2015070192A (ja) * 2013-09-30 2015-04-13 サンケン電気株式会社 半導体装置の製造方法、半導体装置
JP5928429B2 (ja) 2013-09-30 2016-06-01 サンケン電気株式会社 半導体装置及びその製造方法
JP6098474B2 (ja) * 2013-10-24 2017-03-22 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6256148B2 (ja) * 2014-03-27 2018-01-10 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2017059600A (ja) * 2015-09-14 2017-03-23 株式会社東芝 半導体装置及びその製造方法
CN113097305B (zh) * 2021-03-26 2022-11-08 深圳市金誉半导体股份有限公司 一种场效应管及其制备方法
CN115458604B (zh) * 2022-10-24 2023-06-30 中芯越州集成电路制造(绍兴)有限公司 Mosfet器件及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261275A (ja) * 2001-03-05 2002-09-13 Shikusuon:Kk Ｍｏｓデバイス
US20090146154A1 (en) * 2007-12-07 2009-06-11 Cree, Inc. Transistor with A-Face Conductive Channel and Trench Protecting Well Region
CN101740382A (zh) * 2004-10-21 2010-06-16 硅尼克斯科技公司 形成半导体器件的方法
US7768066B2 (en) * 2007-07-30 2010-08-03 Hitachi, Ltd. Semiconductor device and electrical circuit device using thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4604241B2 (ja) * 2004-11-18 2011-01-05 独立行政法人産業技術総合研究所 炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法
JP2006351744A (ja) * 2005-06-15 2006-12-28 Fuji Electric Holdings Co Ltd 炭化珪素半導体装置の製造方法
JP4564509B2 (ja) * 2007-04-05 2010-10-20 株式会社東芝 電力用半導体素子
JP5564781B2 (ja) * 2008-07-07 2014-08-06 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JP5298691B2 (ja) * 2008-07-31 2013-09-25 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
CA2736950A1 (en) * 2009-03-27 2010-09-30 Sumitomo Electric Industries, Ltd. Mosfet and method for manufacturing mosfet
EP2418683A4 (en) * 2009-04-10 2013-05-15 Sumitomo Electric Industries FIELD EFFECT TRANSISTOR WITH INSULATED GATE
JP5531787B2 (ja) * 2010-05-31 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261275A (ja) * 2001-03-05 2002-09-13 Shikusuon:Kk Ｍｏｓデバイス
CN101740382A (zh) * 2004-10-21 2010-06-16 硅尼克斯科技公司 形成半导体器件的方法
US7768066B2 (en) * 2007-07-30 2010-08-03 Hitachi, Ltd. Semiconductor device and electrical circuit device using thereof
US20090146154A1 (en) * 2007-12-07 2009-06-11 Cree, Inc. Transistor with A-Face Conductive Channel and Trench Protecting Well Region

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298926A (zh) * 2015-06-05 2017-01-04 北大方正集团有限公司 一种垂直双扩散金属氧化物半导体晶体管及其制作方法
CN107994074A (zh) * 2016-10-26 2018-05-04 深圳尚阳通科技有限公司 沟槽栅超结器件及其制造方法
CN107994074B (zh) * 2016-10-26 2021-06-08 深圳尚阳通科技有限公司 沟槽栅超结器件及其制造方法

Also Published As

Publication number Publication date
JP2012253293A (ja) 2012-12-20
US20120313112A1 (en) 2012-12-13
EP2720269A1 (en) 2014-04-16
WO2012169224A1 (ja) 2012-12-13
KR20140012139A (ko) 2014-01-29
TW201251023A (en) 2012-12-16

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Application publication date: 20140108