KR20130102576A - 스태거드 박막 트랜지스터 및 그 형성 방법 - Google Patents

스태거드 박막 트랜지스터 및 그 형성 방법 Download PDF

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Publication number
KR20130102576A
KR20130102576A KR1020137008425A KR20137008425A KR20130102576A KR 20130102576 A KR20130102576 A KR 20130102576A KR 1020137008425 A KR1020137008425 A KR 1020137008425A KR 20137008425 A KR20137008425 A KR 20137008425A KR 20130102576 A KR20130102576 A KR 20130102576A
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South Korea
Prior art keywords
layer
copper
thin film
oxide
film transistor
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Korean (ko)
Inventor
파비오 피에라리시
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20130102576A publication Critical patent/KR20130102576A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
KR1020137008425A 2010-09-03 2011-08-09 스태거드 박막 트랜지스터 및 그 형성 방법 Ceased KR20130102576A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10175294.7 2010-09-03
EP10175294A EP2426720A1 (en) 2010-09-03 2010-09-03 Staggered thin film transistor and method of forming the same
PCT/EP2011/063712 WO2012028432A1 (en) 2010-09-03 2011-08-09 Staggered thin film transistor and method of forming the same

Publications (1)

Publication Number Publication Date
KR20130102576A true KR20130102576A (ko) 2013-09-17

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KR1020137008425A Ceased KR20130102576A (ko) 2010-09-03 2011-08-09 스태거드 박막 트랜지스터 및 그 형성 방법

Country Status (7)

Country Link
US (1) US20120056173A1 (https=)
EP (1) EP2426720A1 (https=)
JP (1) JP2013541192A (https=)
KR (1) KR20130102576A (https=)
CN (1) CN103140929B (https=)
TW (1) TW201232784A (https=)
WO (1) WO2012028432A1 (https=)

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Also Published As

Publication number Publication date
CN103140929A (zh) 2013-06-05
JP2013541192A (ja) 2013-11-07
TW201232784A (en) 2012-08-01
WO2012028432A1 (en) 2012-03-08
US20120056173A1 (en) 2012-03-08
EP2426720A1 (en) 2012-03-07
CN103140929B (zh) 2015-12-02

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P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000