TW201232784A - Staggered thin film transistor and method of forming the same - Google Patents

Staggered thin film transistor and method of forming the same Download PDF

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Publication number
TW201232784A
TW201232784A TW100129784A TW100129784A TW201232784A TW 201232784 A TW201232784 A TW 201232784A TW 100129784 A TW100129784 A TW 100129784A TW 100129784 A TW100129784 A TW 100129784A TW 201232784 A TW201232784 A TW 201232784A
Authority
TW
Taiwan
Prior art keywords
layer
copper
oxide
thin film
film transistor
Prior art date
Application number
TW100129784A
Other languages
English (en)
Chinese (zh)
Inventor
Fabio Pieralisi
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201232784A publication Critical patent/TW201232784A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
TW100129784A 2010-09-03 2011-08-19 Staggered thin film transistor and method of forming the same TW201232784A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP10175294A EP2426720A1 (en) 2010-09-03 2010-09-03 Staggered thin film transistor and method of forming the same

Publications (1)

Publication Number Publication Date
TW201232784A true TW201232784A (en) 2012-08-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW100129784A TW201232784A (en) 2010-09-03 2011-08-19 Staggered thin film transistor and method of forming the same

Country Status (7)

Country Link
US (1) US20120056173A1 (https=)
EP (1) EP2426720A1 (https=)
JP (1) JP2013541192A (https=)
KR (1) KR20130102576A (https=)
CN (1) CN103140929B (https=)
TW (1) TW201232784A (https=)
WO (1) WO2012028432A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI594333B (zh) * 2013-12-31 2017-08-01 國立交通大學 降低氧化物薄膜電晶體之接觸電阻的方法

Also Published As

Publication number Publication date
CN103140929A (zh) 2013-06-05
JP2013541192A (ja) 2013-11-07
WO2012028432A1 (en) 2012-03-08
KR20130102576A (ko) 2013-09-17
US20120056173A1 (en) 2012-03-08
EP2426720A1 (en) 2012-03-07
CN103140929B (zh) 2015-12-02

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