JP6654770B2 - 薄膜トランジスタ基板及び表示装置 - Google Patents
薄膜トランジスタ基板及び表示装置 Download PDFInfo
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- JP6654770B2 JP6654770B2 JP2017245726A JP2017245726A JP6654770B2 JP 6654770 B2 JP6654770 B2 JP 6654770B2 JP 2017245726 A JP2017245726 A JP 2017245726A JP 2017245726 A JP2017245726 A JP 2017245726A JP 6654770 B2 JP6654770 B2 JP 6654770B2
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- 239000010409 thin film Substances 0.000 title claims description 97
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- 238000002161 passivation Methods 0.000 description 24
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
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- 239000011787 zinc oxide Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 229910052804 chromium Inorganic materials 0.000 description 2
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- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 229910001092 metal group alloy Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H10K59/122—Pixel-defining structures or layers, e.g. banks
Description
まず、図1に示された構造を有する第1予備試料を製造した。
前記で製造された第1予備試料を250℃で熱処理して、図1に示された構造を有する薄膜トランジスタを製造した。このように製造された薄膜トランジスタを、試料1という。
前述の第1予備試料を350℃で熱処理して、図1に示された構造を有する薄膜トランジスタを製造した。このように製造された薄膜トランジスタを、試料2という。
次に、図2に示された構造を有する第2予備試料を製造した。
前述の第2予備試料を250℃で熱処理して、図2に示された構造を有する薄膜トランジスタを製造した。このように製造された薄膜トランジスタを、試料3という。
前述の第2予備試料を350℃で熱処理して、図2に示された構造を有する薄膜トランジスタを製造した。このように製造された薄膜トランジスタを、試料4という。
試料1、2、3及び4に対して電圧及び電流特性を測定して、閾値電圧(Vth)、電荷の飽和移動度(saturation mobility)、閾値下の振れ(subthreshold swing、S.S)、オン−オフ電流比(ION/IOFF)、及びヒステリシス(hysteresis)を確認した。その結果を、図10A(試料1)、図10B(試料2)、図10C(試料3)、図10D(試料4)及び表1に示した。
試料1、2、3及び4に対してX線光電子分光試験を行い、その結果を図11A、図11B、図11C及び図11Dに示した。
第1予備試料、第2予備試料、試料1、試料2、試料3及び試料4に対してラザフォード後方散乱分光(Rutherford Backscattering Spectrometry、RBS)分析を行った。具体的には、チャネリング方法(Channelling Analysis)によって、酸化物半導体層130,230に対してラザフォード後方散乱分光(Rutherford Backscattering Spectrometry、RBS)分析を行った。図13A及び図13Bは、ラザフォード後方散乱分光(Rutherford Backscattering Spectrometry、RBS)分析グラフである。
101,201,301,401,501 薄膜トランジスタ
30 平坦化層
50 バンク層
70 有機発光素子
71 第1電極
72 有機層
73 第2電極
120,220,320,420,520 第1保護膜
130,230,330,430,530 酸化物半導体層
140,240,340,440,540 ゲート電極
150,250,350,450,550 ソース電極
160,260,360,460,560 ドレイン電極
170,270,370,470,570 第2保護膜
Claims (10)
- ベース基板と、
前記ベース基板上に配置された第1保護膜と、
前記第1保護膜上に配置された酸化物半導体層と、
前記酸化物半導体層上に配置された第2保護膜と、
前記酸化物半導体層と絶縁され、前記酸化物半導体層と少なくとも一部重なるゲート電極と、
前記酸化物半導体層と接続されたソース電極と、
前記ソース電極と離隔して前記酸化物半導体層と接続されたドレイン電極と、
を含み、
前記酸化物半導体層は、2.4at%(atomic%)〜2.6at%(atomic%)の水素含量を有し、
前記第1保護膜及び前記第2保護膜のいずれか一方は、0.7at%〜0.8at%の水素含量を有し、他方は、3.0at%〜3.1at%の水素含量を有する、
薄膜トランジスタ基板。 - 前記第1保護膜はシリコン酸化物を含む、請求項1に記載の薄膜トランジスタ基板。
- 前記第1保護膜はシリコン窒化物を含む、請求項1に記載の薄膜トランジスタ基板。
- 前記第1保護膜は、
少なくとも1つのシリコン酸化物層と、
前記少なくとも1つのシリコン酸化物層と交互に(alternately)配置された少なくとも1つのシリコン窒化物層と、
を含む、請求項1に記載の薄膜トランジスタ基板。 - 前記少なくとも1つのシリコン酸化物層のいずれか1つは前記酸化物半導体層と接触し、
前記酸化物半導体層と接触するシリコン酸化物層は100nm〜500nmの厚さを有する、請求項4に記載の薄膜トランジスタ基板。 - ベース基板上に第1保護膜を形成するステップと、
前記第1保護膜上に酸化物半導体層を形成するステップと、
前記酸化物半導体層上に第2保護膜を形成するステップと、
互いに離隔して配置され、それぞれ前記酸化物半導体層と接続されたソース電極及びドレイン電極を形成するステップと、
前記酸化物半導体層と絶縁され、前記酸化物半導体層と少なくとも一部重なるゲート電極を形成するステップと、
を含み、
前記酸化物半導体層は、2.4at%(atomic%)〜2.6at%(atomic%)の水素含量を有し、
前記第1保護膜及び前記第2保護膜のいずれか一方は、0.7at%〜0.8at%の水素含量を有し、他方は、3.0at%〜3.1at%の水素含量を有する、
薄膜トランジスタ基板の製造方法。 - 前記酸化物半導体層に水素を注入するステップをさらに含む、請求項6に記載の薄膜トランジスタ基板の製造方法。
- 前記第2保護膜を形成するステップの後、熱処理するステップをさらに含む、請求項6に記載の薄膜トランジスタ基板の製造方法。
- 基板と、
前記基板上に配置された薄膜トランジスタと、
前記薄膜トランジスタ上に配置された光量調節層と、
を含み、
前記薄膜トランジスタは、
前記基板上に配置された第1保護膜と、
前記第1保護膜上に配置された酸化物半導体層と、
前記酸化物半導体層上に配置された第2保護膜と、
前記酸化物半導体層と絶縁され、前記酸化物半導体層と少なくとも一部重なるゲート電極と、
前記酸化物半導体層と接続されたソース電極と、
前記ソース電極と離隔して前記酸化物半導体層と接続されたドレイン電極と、
を含み、
前記酸化物半導体層は、2.4at%(atomic%)〜2.6at%(atomic%)の水素含量を有し、
前記第1保護膜及び前記第2保護膜のいずれか一方は、0.7at%〜0.8at%の水素含量を有し、他方は、3.0at%〜3.1at%の水素含量を有する、
表示装置。 - 前記光量調節層は、有機発光素子又は液晶層である、請求項9に記載の表示装置。
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