CN112436058A - 柔性InGaZnO薄膜晶体管及制备方法 - Google Patents
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Abstract
本发明公开了一种柔性InGaZnO薄膜晶体管及制备方法。柔性InGaZnO薄膜晶体管，包括：柔性衬底，柔性衬底为柔性PI衬底；缓冲层，缓冲层位于柔性衬底上侧；ITO栅极，ITO栅极位于缓冲层上侧；高K介质层，高K介质层位于ITO栅极上侧；InGaZnO有源层，InGaZnO有源层位于高K介质层上侧；ITO源极，ITO源极位于有源层上侧；ITO漏极，ITO漏极位于有源层上侧。通过将栅极、源极和漏极的材料设置为ITO，使得薄膜晶体管整体具有良好的柔韧性和高透光率。
Description
技术领域
本发明涉及薄膜晶体管技术领域，尤其是涉及一种柔性InGaZnO薄膜晶体管及制备方法。
背景技术
薄膜晶体管作为三端电子器件，是众多现代电子设备的共同基础单元，包括：柔性显示、有机电致发光显示与照明、化学与生物传感器、柔性光伏、柔性逻辑与存储、柔性电池、可穿戴设备等。但是传统的晶体管沟道材料大多为单晶硅、多晶硅、非晶硅等，由于材料的本征属性而面临发展瓶颈，无法适应未来电子设备的多样化需求。InGaZnO作为新型的氧化物半导体材料，不仅具备高电子迁移率(>50cm2V-1s-1)，同时也属于非晶结构(结晶温度>500℃)，而且其在可见光波段的高透光率适用于多样化的应用场景。除此之外，InGaZnO在禁带中具有更低的缺陷态密度，并且在13μm的曲率半径下依然维持正常的TFT性能输出。最后，InGaZnO材料的制备流程兼容现有Si基工艺，可极大降低产业链的生产成本。
相关技术中的InGaZnO薄膜晶体管虽然已经实现了柔性结构，但是在源/漏/栅电极材料的选择上依然是传统金属材料，常见的有：Ti、Au、Cr、Mo、Al等。金属电极的优点是可以实现良好的接触电阻以及优秀的粘附性，但是金属材料不具备良好的柔韧属性，且透光率极低。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一。为此，本发明提出一种柔性InGaZnO薄膜晶体管，具有良好的柔韧性和高透光率。
根据本发明的第一方面实施例的柔性InGaZnO薄膜晶体管，包括：柔性衬底，所述柔性衬底为柔性PI衬底；缓冲层，所述缓冲层位于所述柔性衬底上侧；ITO栅极，所述ITO栅极位于所述缓冲层上侧；高K介质层，所述高K介质层位于所述ITO栅极上侧；InGaZnO有源层，所述InGaZnO有源层位于所述高K介质层上侧；ITO源极，所述ITO源极位于所述有源层上侧；ITO漏极，所述ITO漏极位于所述有源层上侧。
根据本发明实施例的柔性InGaZnO薄膜晶体管，至少具有如下有益效果：通过将栅极、源极和漏极的材料设置为ITO，使得薄膜晶体管整体具有良好的柔韧性和高透光率。
根据本发明的一些实施例，所述缓冲层为氧化铝缓冲层。
根据本发明的第二方面实施例的柔性InGaZnO薄膜晶体管制备方法，包括：提供柔性PI衬底；在所述柔性PI衬底上依次形成缓冲层、ITO栅极、高K介质层、InGaZnO有源层；在所述InGaZnO有源层上形成ITO源极和ITO漏极。
根据本发明的一些实施例，所述缓冲层为使用原子层沉积工艺制备的氧化铝薄膜，所述氧化铝薄膜的厚度为100nm。
根据本发明的一些实施例，所述ITO栅极为使用磁控溅射工艺制备的ITO薄膜，所述ITO薄膜的厚度为100nm。
根据本发明的一些实施例，所述高K介质层为使用磁控溅射工艺制备高K介质薄膜，所述高K介质薄膜的厚度为40nm至60nm，所述高K介质薄膜在氮气氛围中进行退火。
根据本发明的一些实施例，所述InGaZnO有源层为使用磁控溅射工艺制备的InGaZnO薄膜，所述InGaZnO薄膜的厚度为50nm，所述InGaZnO薄膜的生长速率为1nm/min。
根据本发明的一些实施例，通过光刻和显影工艺，在所述InGaZnO有源层上形成所述ITO源极和所述ITO漏极的光刻胶图形，通过磁控溅射工艺在所述光刻胶图形上制备厚度为100nm的ITO薄膜，通过光刻胶的剥离工艺形成所述ITO源极和所述ITO漏极。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
下面结合附图和实施例对本发明做进一步的说明，其中：
图1为本发明实施例柔性InGaZnO薄膜晶体管结构的示意图；
附图标记：
柔性衬底110、缓冲层120、ITO栅极130、高K介质层140；
InGaZnO有源层150、ITO源极160、ITO漏极170。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，需要理解的是，涉及到方位描述，例如上、下、前、后、左、右等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
本发明的描述中，除非另有明确的限定，设置、安装、连接等词语应做广义理解，所属技术领域技术人员可以结合技术方案的具体内容合理确定上述词语在本发明中的具体含义。
术语解释：
InGaZnO(Indium Gallium Zinc Oxide)，铟镓锌氧化物，是一种新型半导体材料，与非晶硅相比具有更高的电子迁移率，用于制备薄膜晶体管的有源层。
ITO(Indium Tin Oxide)，氧化铟锡，与单一的金属材料相比具有较好的可见光透射率与柔韧性。
高K介质层，高介电值的介质层，具有良好的绝缘性，一般由氮化物、金属氧化物或铁电材料制成。
柔性PI(Polyimide)衬底，聚酰亚胺衬底，为有机高分子材料，广泛用于柔性显示中作为衬底。
在本发明的一些实施例中，参照图1，柔性InGaZnO薄膜晶体管包括：柔性衬底110、缓冲层120、ITO栅极130、高K介质层140、InGaZnO有源层150、ITO源极160、ITO漏极170，柔性衬底110为柔性PI衬底，缓冲层120位于柔性衬底110上侧，ITO栅极130位于缓冲层120上侧，高K介质层140位于ITO栅极130上侧，InGaZnO有源层150位于高K介质层140上侧，ITO源极160位于有源层上侧，ITO漏极170位于有源层上侧。
通过将栅极、源极和漏极的材料设置为ITO，ITO材料具有较好的可见光透射率与柔韧性，使得薄膜晶体管整体具有良好的柔韧性和高透光率。在柔性电子领域和透明穿戴设备上具有较高的应用价值。
一些实施例，缓冲层120为氧化铝缓冲层120。氧化铝结构致密，覆盖缺陷能力强，作为缓冲层120可以减少柔性PI衬底在制备过程中水汽的向上扩散。在其它实施例中，缓冲层120可以为多层，如衬底上设置氮化硅增加与衬底的黏附性，最上层再设置氧化铝。
在本发明的一些实施例中，提供了一种柔性InGaZnO薄膜晶体管制备方法，包括：提供柔性PI衬底；在柔性PI衬底110上依次形成缓冲层120、ITO栅极130、高K介质层140、InGaZnO有源层150；在InGaZnO有源层150上形成ITO源极160和ITO漏极170。
一些实施例，缓冲层120为使用原子层沉积工艺制备的氧化铝薄膜，氧化铝薄膜的厚度为100nm。制备完成后，依次使用乙醇、丙酮以及去离子水进行5min的超声清洗，最后用氮气吹干，以清除表面附着不牢固的物质。原子层沉积工艺可以将物质以单原子膜形式一层一层的镀在衬底表面，具有优异的沉积均匀性与一致性。在一些其他实施例中，可以采用磁控溅射工艺制备，其氧化铝薄膜的厚度可以根据器件制备要求任意设置。
一些实施例，ITO栅极130为使用磁控溅射工艺制备的ITO薄膜，ITO薄膜的厚度为100nm。磁控溅射工艺具有沉积速度快、基材温升低、对膜层的损伤小的优点。在一些其他实施例中，可以采用化学气相沉积、脉冲激光沉积等工艺制备ITO栅极130，ITO薄膜的厚度可以根据器件设计的要求任意设置。
一些实施例，高K介质层140为使用磁控溅射工艺制备高K介质薄膜，高K介质薄膜的厚度为40nm至60nm，高K介质薄膜在氮气氛围中进行退火。具体的，在氮气中退火的温度＜300℃，时长为10至30min，气体流量为500mL/min。高K介质层140具有良好的绝缘性，一般由氮化物、金属氧化物或铁电材料制成，其制备工艺可以根据材料的选择灵活变化，如凝胶气相沉积制备氮化硅、分子束外延法制备铁电材料等。
一些实施例，InGaZnO有源层150为使用磁控溅射工艺制备的InGaZnO薄膜，InGaZnO薄膜的厚度为50nm，InGaZnO薄膜的生长速率为1nm/min。磁控溅射工艺中不同的溅射速度生成的InGaZnO薄膜质量不同，会影响InGaZnO薄膜的电阻率。在其它实施例中，可以根据实际需求，选择不同的薄膜生长速率。
一些实施例，通过光刻和显影工艺，在InGaZnO有源层150上形成ITO源极160和ITO漏极170的光刻胶图形，通过磁控溅射工艺在光刻胶图形上制备厚度为100nm的ITO薄膜，通过光刻胶的剥离工艺形成ITO源极160和ITO漏极170。具体的，光刻胶图形的沟道长度为5nm至20μm，制备完成后在气体组分为N2：H2＝95：5，温度＜300℃的环境中，退火20min，以减少接触电阻。在其它实施例中，沟道长度与电极厚度可以任意设置。
上面结合附图对本发明实施例作了详细说明，但是本发明不限于上述实施例，在所属技术领域普通技术人员所具备的知识范围内，还可以在不脱离本发明宗旨的前提下作出各种变化。此外，在不冲突的情况下，本发明的实施例及实施例中的特征可以相互组合。
Claims (8)
1.柔性InGaZnO薄膜晶体管，其特征在于，包括：
柔性衬底，所述柔性衬底为柔性PI衬底；
缓冲层，所述缓冲层位于所述柔性衬底上侧；
ITO栅极，所述ITO栅极位于所述缓冲层上侧；
高K介质层，所述高K介质层位于所述ITO栅极上侧；
InGaZnO有源层，所述InGaZnO有源层位于所述高K介质层上侧；
ITO源极，所述ITO源极位于所述有源层上侧；
ITO漏极，所述ITO漏极位于所述有源层上侧。
2.根据权利要求1所述的柔性InGaZnO薄膜晶体管，其特征在于，所述缓冲层为氧化铝缓冲层。
3.柔性InGaZnO薄膜晶体管制备方法，其特征在于，包括：
提供柔性PI衬底；
在所述柔性PI衬底上依次形成缓冲层、ITO栅极、高K介质层、InGaZnO有源层；
在所述InGaZnO有源层上形成ITO源极和ITO漏极。
4.根据权利要求3所述的柔性InGaZnO薄膜晶体管制备方法，其特征在于，所述缓冲层为使用原子层沉积工艺制备的氧化铝薄膜，所述氧化铝薄膜的厚度为100nm。
5.根据权利要求4所述的柔性InGaZnO薄膜晶体管制备方法，其特征在于，所述ITO栅极为使用磁控溅射工艺制备的ITO薄膜，所述ITO薄膜的厚度为100nm。
6.根据权利要求5所述的柔性InGaZnO薄膜晶体管制备方法，其特征在于，所述高K介质层为使用磁控溅射工艺制备高K介质薄膜，所述高K介质薄膜的厚度为40nm至60nm，所述高K介质薄膜在氮气氛围中进行退火。
7.根据权利要求6所述的柔性InGaZnO薄膜晶体管制备方法，其特征在于，所述InGaZnO有源层为使用磁控溅射工艺制备的InGaZnO薄膜，所述InGaZnO薄膜的厚度为50nm，所述InGaZnO薄膜的生长速率为1nm/min。
8.根据权利要求7所述的柔性InGaZnO薄膜晶体管制备方法，其特征在于，通过光刻和显影工艺，在所述InGaZnO有源层上形成所述ITO源极和所述ITO漏极的光刻胶图形，通过磁控溅射工艺在所述光刻胶图形上制备厚度为100nm的ITO薄膜，通过光刻胶的剥离工艺形成所述ITO源极和所述ITO漏极。
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