KR20090084688A - 기판처리장치 및 이에 사용되는 기판지지부재 - Google Patents
기판처리장치 및 이에 사용되는 기판지지부재 Download PDFInfo
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- KR20090084688A KR20090084688A KR1020090005330A KR20090005330A KR20090084688A KR 20090084688 A KR20090084688 A KR 20090084688A KR 1020090005330 A KR1020090005330 A KR 1020090005330A KR 20090005330 A KR20090005330 A KR 20090005330A KR 20090084688 A KR20090084688 A KR 20090084688A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
Claims (10)
- 기판을 지지하는 지지부, 및 이 지지부에 지지된 기판의 일(一) 주면(主面)의 측방을 둘러싸고, 해당 주면과 이어지도록 형성된 연장면을 갖는 기판보유지지기구와,상기 기판보유지지기구를 회전시키는 회전기구와,상기 기판보유지지기구에 보유지지된 기판의 상기 주면 위에 에칭액을 공급하는 에칭액 공급기구를 포함하는 기판처리장치.
- 제1항에 있어서,상기 기판보유지지기구가, 기판지지부재와, 상기 기판지지부재를 지지하는 베이스부재를 갖추고,상기 지지부 및 상기 연장면이 상기 기판지지부재에 설치되어 있으며,상기 회전기구가, 상기 베이스부재를 상기 기판지지부재째로 회전시키는 베이스부재 회전기구를 포함하는 기판처리장치.
- 제1항에 있어서,상기 기판보유지지기구가, 상기 지지부 및 상기 연장면을 갖는 베이스부재를 갖추고,상기 회전기구가, 상기 베이스부재를 회전시키는 베이스부재 회전기구를 포 함하는 기판처리장치.
- 제1항에 있어서,상기 연장면이, 상기 지지부에 지지되는 기판의 상기 주면보다 에칭액에 대한 친액성이 높은 표면인 기판처리장치.
- 제1항에 있어서,상기 지지부가, 기판을 수평자세로 지지하는 것이며,상기 지지부가, 상기 지지부에 지지된 기판의 상기 주면이 상기 연장면보다 높아지도록 설치되어 있는 기판처리장치.
- 제5항에 있어서,상기 지지부가, 상기 지지부에 지지된 기판에 대해 에칭액을 사용한 처리가 행해진 후의 기판의 상기 주면이 상기 연장면보다 높아지도록 설치되어 있는 기판처리장치.
- 제1항에 있어서,상기 지지부가, 기판을 수평자세로 지지하는 것이며,상기 기판보유지지기구가, 상기 연장면에 있어서의 기판의 회전반경방향의 바깥쪽으로 이어져서, 기판의 회전반경방향의 바깥쪽을 향함에 따라 낮아지는 테이 퍼면을 더 포함하는 기판처리장치.
- 제1항에 있어서,상기 에칭액 공급기구가, 상기 회전기구에 의해 회전되는 기판의 상기 주면 위의 전역을 주사(走査)하도록 에칭액을 공급하는 기판처리장치.
- 제8항에 있어서,상기 에칭액 공급기구가, 상기 회전기구에 의해 회전되는 기판의 주면 위 뿐만이 아니라, 해당 기판의 주단(周端)위치보다 기판의 회전반경방향의 바깥쪽 위치까지 주사되는 기판처리장치.
- 에칭액을 사용하여 기판을 처리하는 기판처리장치에 사용되고, 기판을 지지하기 위한 기판지지부재로서,기판을 지지하는 지지부, 및 이 지지부에 지지된 기판의 일 주면의 측방을 둘러싸고, 해당 주면과 이어지도록 형성된 연장면을 포함하는 기판지지부재.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008021776 | 2008-01-31 | ||
JPJP-P-2008-021776 | 2008-01-31 | ||
JPJP-P-2008-307995 | 2008-12-02 | ||
JP2008307995A JP5312923B2 (ja) | 2008-01-31 | 2008-12-02 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
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KR20090084688A true KR20090084688A (ko) | 2009-08-05 |
KR101041306B1 KR101041306B1 (ko) | 2011-06-14 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020090005330A KR101041306B1 (ko) | 2008-01-31 | 2009-01-22 | 기판처리장치 및 이에 사용되는 기판지지부재 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20090194234A1 (ko) |
JP (1) | JP5312923B2 (ko) |
KR (1) | KR101041306B1 (ko) |
CN (1) | CN101499418B (ko) |
TW (1) | TWI388032B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160033606A (ko) * | 2014-09-18 | 2016-03-28 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
Families Citing this family (25)
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JP5312923B2 (ja) | 2008-01-31 | 2013-10-09 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP5276420B2 (ja) * | 2008-01-31 | 2013-08-28 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP5236553B2 (ja) * | 2009-03-30 | 2013-07-17 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
CN101773917B (zh) * | 2010-03-05 | 2015-01-07 | 上海集成电路研发中心有限公司 | 硅片清洗装置及方法 |
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JP5409902B2 (ja) * | 2010-04-26 | 2014-02-05 | 三菱電機株式会社 | ウェットエッチング用治具 |
JP5795917B2 (ja) * | 2010-09-27 | 2015-10-14 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
CN102453915B (zh) * | 2010-10-27 | 2014-03-12 | 富葵精密组件(深圳)有限公司 | 蚀刻装置及使用该蚀刻装置蚀刻基板的方法 |
JP5782279B2 (ja) * | 2011-01-20 | 2015-09-24 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP5795920B2 (ja) * | 2011-09-21 | 2015-10-14 | 株式会社Screenホールディングス | 基板処理装置 |
JP5844104B2 (ja) * | 2011-09-28 | 2016-01-13 | 株式会社Screenホールディングス | スリットノズルおよび基板処理装置 |
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US10593521B2 (en) * | 2013-03-12 | 2020-03-17 | Applied Materials, Inc. | Substrate support for plasma etch operations |
JP6182347B2 (ja) * | 2013-04-19 | 2017-08-16 | 株式会社荏原製作所 | 基板処理装置 |
JP2015216255A (ja) * | 2014-05-12 | 2015-12-03 | キヤノン株式会社 | エッチングチャンバー、および基板の製造方法 |
US9799539B2 (en) * | 2014-06-16 | 2017-10-24 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
JP6373803B2 (ja) * | 2015-06-23 | 2018-08-15 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
JP6596396B2 (ja) | 2016-08-09 | 2019-10-23 | 東芝メモリ株式会社 | 基板の洗浄方法および洗浄装置 |
US10439062B2 (en) * | 2016-09-09 | 2019-10-08 | Infineon Technologies Ag | Metallization layers for semiconductor devices and methods of forming thereof |
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2009
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KR20160033606A (ko) * | 2014-09-18 | 2016-03-28 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
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US20090194234A1 (en) | 2009-08-06 |
US9401283B2 (en) | 2016-07-26 |
CN101499418B (zh) | 2012-08-15 |
TWI388032B (zh) | 2013-03-01 |
JP5312923B2 (ja) | 2013-10-09 |
CN101499418A (zh) | 2009-08-05 |
US20150325449A1 (en) | 2015-11-12 |
KR101041306B1 (ko) | 2011-06-14 |
JP2009206485A (ja) | 2009-09-10 |
TW200939390A (en) | 2009-09-16 |
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