KR20080091086A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20080091086A
KR20080091086A KR1020087012391A KR20087012391A KR20080091086A KR 20080091086 A KR20080091086 A KR 20080091086A KR 1020087012391 A KR1020087012391 A KR 1020087012391A KR 20087012391 A KR20087012391 A KR 20087012391A KR 20080091086 A KR20080091086 A KR 20080091086A
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KR
South Korea
Prior art keywords
resin
core material
resin composition
glass transition
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087012391A
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English (en)
Korean (ko)
Inventor
마사히로 와다
히로유끼 타나까
히로시 히로세
테페이 이또
케냐 타치바나
Original Assignee
스미토모 베이클라이트 가부시키가이샤
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Application filed by 스미토모 베이클라이트 가부시키가이샤 filed Critical 스미토모 베이클라이트 가부시키가이샤
Publication of KR20080091086A publication Critical patent/KR20080091086A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • H05K3/305—Affixing by adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Wire Bonding (AREA)
KR1020087012391A 2006-09-13 2007-09-05 반도체 장치 Ceased KR20080091086A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00248473 2006-09-13
JP2006248473 2006-09-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020107028065A Division KR101195408B1 (ko) 2006-09-13 2007-09-05 반도체 장치

Publications (1)

Publication Number Publication Date
KR20080091086A true KR20080091086A (ko) 2008-10-09

Family

ID=39183681

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020087012391A Ceased KR20080091086A (ko) 2006-09-13 2007-09-05 반도체 장치
KR1020107028065A Expired - Fee Related KR101195408B1 (ko) 2006-09-13 2007-09-05 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020107028065A Expired - Fee Related KR101195408B1 (ko) 2006-09-13 2007-09-05 반도체 장치

Country Status (9)

Country Link
US (1) US8008767B2 (enExample)
EP (1) EP1956648A4 (enExample)
JP (2) JP4802246B2 (enExample)
KR (2) KR20080091086A (enExample)
CN (1) CN101356643B (enExample)
CA (1) CA2630824C (enExample)
SG (1) SG160403A1 (enExample)
TW (1) TW200830486A (enExample)
WO (1) WO2008032620A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9941245B2 (en) * 2007-09-25 2018-04-10 Intel Corporation Integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate
JP5408131B2 (ja) * 2008-06-12 2014-02-05 住友ベークライト株式会社 半導体素子搭載基板
US8399773B2 (en) * 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US8502399B2 (en) * 2009-06-22 2013-08-06 Sumitomo Bakelite Co., Ltd. Resin composition for encapsulating semiconductor and semiconductor device
CN101735562B (zh) * 2009-12-11 2012-09-26 广东生益科技股份有限公司 环氧树脂组合物及其制备方法及采用其制作的层压材料及覆铜箔层压板
JP2011222946A (ja) * 2010-03-26 2011-11-04 Sumitomo Bakelite Co Ltd 回路基板、半導体装置、回路基板の製造方法および半導体装置の製造方法
JP5593897B2 (ja) * 2010-07-12 2014-09-24 住友ベークライト株式会社 回路基板、半導体装置、回路基板の製造方法および半導体装置の製造方法
JP2012049423A (ja) * 2010-08-30 2012-03-08 Sumitomo Bakelite Co Ltd 回路基板、半導体装置、回路基板の製造方法および半導体装置の製造方法
KR101728203B1 (ko) 2010-09-30 2017-04-18 히타치가세이가부시끼가이샤 접착제 조성물, 반도체 장치의 제조 방법 및 반도체 장치
KR101464454B1 (ko) * 2010-10-22 2014-11-21 히타치가세이가부시끼가이샤 접착제 조성물, 반도체 장치의 제조 방법 및 반도체 장치
US20120156474A1 (en) * 2010-12-20 2012-06-21 E. I. Du Pont De Nemours And Company Article having curable coating comprising imidazolium monocarboxylate salt
US8969732B2 (en) * 2011-09-28 2015-03-03 Ibiden Co., Ltd. Printed wiring board
JP6281184B2 (ja) * 2012-03-14 2018-02-21 住友ベークライト株式会社 金属張積層板、プリント配線基板、半導体パッケージ、および半導体装置
US9196356B2 (en) * 2013-03-14 2015-11-24 Globalfoundries Singapore Pte. Ltd. Stackable non-volatile memory
US9218875B2 (en) 2013-03-14 2015-12-22 Globalfoundries Singapore Pte. Ltd. Resistive non-volatile memory
KR102130547B1 (ko) * 2013-03-27 2020-07-07 삼성디스플레이 주식회사 가요성 기판 및 이를 포함하는 가요성 표시 장치
US9155191B2 (en) 2013-05-31 2015-10-06 Qualcomm Incorporated Substrate comprising inorganic material that lowers the coefficient of thermal expansion (CTE) and reduces warpage
KR102116962B1 (ko) 2013-06-25 2020-05-29 삼성전자주식회사 반도체 패키지
US9778510B2 (en) * 2013-10-08 2017-10-03 Samsung Electronics Co., Ltd. Nanocrystal polymer composites and production methods thereof
MX2016011858A (es) * 2014-03-28 2016-12-02 Huntsman Advanced Mat Licensing (Switzerland) Gmbh Un procedimiento para la preparacion de un articulo de material compuesto con fibra reforzada, los articulos compuestos obtenidos y el uso de los mismos.
JP6212011B2 (ja) * 2014-09-17 2017-10-11 東芝メモリ株式会社 半導体製造装置
TWI526129B (zh) * 2014-11-05 2016-03-11 Elite Material Co Ltd Multilayer printed circuit boards with dimensional stability
US20170287838A1 (en) 2016-04-02 2017-10-05 Intel Corporation Electrical interconnect bridge
JP6793517B2 (ja) * 2016-10-17 2020-12-02 株式会社ダイセル シート状プリプレグ
US20190259731A1 (en) * 2016-11-09 2019-08-22 Unisem (M) Berhad Substrate based fan-out wafer level packaging
US20180130768A1 (en) * 2016-11-09 2018-05-10 Unisem (M) Berhad Substrate Based Fan-Out Wafer Level Packaging
JP6991014B2 (ja) * 2017-08-29 2022-01-12 キオクシア株式会社 半導体装置
KR102397902B1 (ko) * 2018-01-29 2022-05-13 삼성전자주식회사 반도체 패키지
JP7135364B2 (ja) * 2018-03-23 2022-09-13 三菱マテリアル株式会社 絶縁回路基板、及び、絶縁回路基板の製造方法
JP7289108B2 (ja) * 2019-02-21 2023-06-09 パナソニックＩｐマネジメント株式会社 半導体封止材料及び半導体装置
EP4007458B1 (en) * 2019-07-31 2023-08-09 Fuji Corporation Method for manufacturing circuit wiring by three-dimensional additive manufacturing
JP7346150B2 (ja) 2019-08-09 2023-09-19 キヤノン株式会社 インクジェット記録ヘッドおよびインクジェット記録装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5224265A (en) * 1991-10-29 1993-07-06 International Business Machines Corporation Fabrication of discrete thin film wiring structures
JP3238340B2 (ja) 1996-12-04 2001-12-10 住友ベークライト株式会社 液状エポキシ樹脂封止材料
JPH11116659A (ja) 1997-10-20 1999-04-27 Sumitomo Bakelite Co Ltd デバイス封止用紫外線硬化型液状樹脂組成物
JPH11233571A (ja) 1998-02-12 1999-08-27 Hitachi Ltd 半導体装置及びアンダーフィル材並びに熱硬化性フィルム材
US6225704B1 (en) * 1999-02-12 2001-05-01 Shin-Etsu Chemical Co., Ltd. Flip-chip type semiconductor device
JP2001313314A (ja) * 2000-04-28 2001-11-09 Sony Corp バンプを用いた半導体装置、その製造方法、および、バンプの形成方法
JP2002050718A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 半導体装置
US7192997B2 (en) 2001-02-07 2007-03-20 International Business Machines Corporation Encapsulant composition and electronic package utilizing same
US6512182B2 (en) * 2001-03-12 2003-01-28 Ngk Spark Plug Co., Ltd. Wiring circuit board and method for producing same
JPWO2003021664A1 (ja) * 2001-08-31 2005-07-07 株式会社日立製作所 半導体装置、構造体及び電子装置
US7038142B2 (en) * 2002-01-24 2006-05-02 Fujitsu Limited Circuit board and method for fabricating the same, and electronic device
AU2003234394A1 (en) * 2002-05-23 2003-12-12 3M Innovative Properties Company Nanoparticle filled underfill
JP2004035668A (ja) 2002-07-02 2004-02-05 Sanyo Chem Ind Ltd 注型用エポキシ樹脂組成物
JP2004134679A (ja) 2002-10-11 2004-04-30 Dainippon Printing Co Ltd コア基板とその製造方法、および多層配線基板
JP2004277671A (ja) * 2003-03-19 2004-10-07 Sumitomo Bakelite Co Ltd プリプレグおよびそれを用いたプリント配線板
JP2005097524A (ja) 2003-09-05 2005-04-14 Sumitomo Bakelite Co Ltd 樹脂組成物、プリプレグおよび積層板
US7285321B2 (en) * 2003-11-12 2007-10-23 E.I. Du Pont De Nemours And Company Multilayer substrates having at least two dissimilar polyimide layers, useful for electronics-type applications, and compositions relating thereto
JP4400191B2 (ja) * 2003-11-28 2010-01-20 住友ベークライト株式会社 樹脂組成物およびそれを用いた基板
US7148577B2 (en) * 2003-12-31 2006-12-12 Intel Corporation Materials for electronic devices
JP2005236067A (ja) 2004-02-20 2005-09-02 Dainippon Printing Co Ltd 配線基板と配線基板の製造方法、および半導パッケージ
JP2005236220A (ja) 2004-02-23 2005-09-02 Dainippon Printing Co Ltd 配線基板と配線基板の製造方法、および半導パッケージ
JP2005254680A (ja) 2004-03-12 2005-09-22 Sumitomo Bakelite Co Ltd 積層板の連続製造方法および装置
JP4108643B2 (ja) * 2004-05-12 2008-06-25 日本電気株式会社 配線基板及びそれを用いた半導体パッケージ
CN100531528C (zh) * 2004-05-27 2009-08-19 揖斐电株式会社 多层印刷配线板
JP4449608B2 (ja) 2004-07-09 2010-04-14 凸版印刷株式会社 半導体装置
JP2006080356A (ja) 2004-09-10 2006-03-23 Toshiba Corp 半導体装置及びその製造方法
US7335608B2 (en) 2004-09-22 2008-02-26 Intel Corporation Materials, structures and methods for microelectronic packaging
US7459782B1 (en) * 2005-10-05 2008-12-02 Altera Corporation Stiffener for flip chip BGA package
US20070298260A1 (en) * 2006-06-22 2007-12-27 Kuppusamy Kanakarajan Multi-layer laminate substrates useful in electronic type applications

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EP1956648A1 (en) 2008-08-13
TWI374523B (enExample) 2012-10-11
KR101195408B1 (ko) 2012-10-29
JP4802246B2 (ja) 2011-10-26
SG160403A1 (en) 2010-04-29
CN101356643A (zh) 2009-01-28
US8008767B2 (en) 2011-08-30
US20090267212A1 (en) 2009-10-29
JP2010004050A (ja) 2010-01-07
CA2630824C (en) 2013-01-08
KR20110000761A (ko) 2011-01-05
CA2630824A1 (en) 2008-03-20
TW200830486A (en) 2008-07-16
WO2008032620A1 (en) 2008-03-20
CN101356643B (zh) 2012-04-25
JPWO2008032620A1 (ja) 2010-01-21

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