KR20080078840A - 연마용 조성물, 연마 방법 및 반도체 집적 회로용 구리배선의 제조 방법 - Google Patents

연마용 조성물, 연마 방법 및 반도체 집적 회로용 구리배선의 제조 방법 Download PDF

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Publication number
KR20080078840A
KR20080078840A KR1020087014807A KR20087014807A KR20080078840A KR 20080078840 A KR20080078840 A KR 20080078840A KR 1020087014807 A KR1020087014807 A KR 1020087014807A KR 20087014807 A KR20087014807 A KR 20087014807A KR 20080078840 A KR20080078840 A KR 20080078840A
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KR
South Korea
Prior art keywords
acid
polishing
carboxylic acid
polishing composition
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1020087014807A
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English (en)
Korean (ko)
Inventor
이오리 요시다
히로유키 가미야
사토시 다케미야
아츠시 하야시
노리히토 나카자와
Original Assignee
아사히 가라스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아사히 가라스 가부시키가이샤 filed Critical 아사히 가라스 가부시키가이샤
Publication of KR20080078840A publication Critical patent/KR20080078840A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020087014807A 2005-12-21 2006-12-21 연마용 조성물, 연마 방법 및 반도체 집적 회로용 구리배선의 제조 방법 Withdrawn KR20080078840A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00368082 2005-12-21
JP2005368082 2005-12-21
JP2006125474 2006-04-28
JPJP-P-2006-00125474 2006-04-28
JP2006277585 2006-10-11
JPJP-P-2006-00277585 2006-10-11

Publications (1)

Publication Number Publication Date
KR20080078840A true KR20080078840A (ko) 2008-08-28

Family

ID=38188693

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087014807A Withdrawn KR20080078840A (ko) 2005-12-21 2006-12-21 연마용 조성물, 연마 방법 및 반도체 집적 회로용 구리배선의 제조 방법

Country Status (6)

Country Link
EP (1) EP1965417B1 (enExample)
JP (3) JP4277930B2 (enExample)
KR (1) KR20080078840A (enExample)
CN (1) CN101346804B (enExample)
TW (1) TW200738852A (enExample)
WO (1) WO2007072918A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170128480A (ko) * 2015-03-12 2017-11-22 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 낮은 pKa 구동의 폴리머 스트리핑 동안에 전하 착화 구리 보호를 촉진하는 조성물 및 방법

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EP2161737A4 (en) * 2007-06-20 2010-06-23 Asahi Glass Co Ltd POLISHING COMPOSITION AND METHOD FOR MANUFACTURING INTEGRATED SEMICONDUCTOR ELEMENT COMPONENTS
JPWO2008155987A1 (ja) * 2007-06-20 2010-08-26 旭硝子株式会社 研磨用組成物、半導体集積回路表面の研磨方法および半導体集積回路用銅配線の作製方法
JP5226278B2 (ja) * 2007-11-08 2013-07-03 株式会社クラレ 研磨用スラリー
JP5413567B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5413566B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
WO2009098924A1 (ja) * 2008-02-06 2009-08-13 Jsr Corporation 化学機械研磨用水系分散体および化学機械研磨方法
JP5413568B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333744B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
KR20100123678A (ko) * 2008-02-18 2010-11-24 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
JP5333743B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333742B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010034497A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016344A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028078A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028077A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224771A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224767A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333741B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028079A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP2010041027A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333739B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333740B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
WO2009133793A1 (ja) * 2008-05-01 2009-11-05 Jsr株式会社 化学機械研磨用水系分散体および該化学機械研磨用水系分散体を調製するためのキット、ならびに化学機械研磨方法
WO2010024404A1 (ja) * 2008-08-28 2010-03-04 旭硝子株式会社 研磨用組成物および半導体集積回路装置の製造方法
CN102210013B (zh) 2008-11-10 2014-07-09 旭硝子株式会社 研磨用组合物和半导体集成电路装置的制造方法
JP6051679B2 (ja) * 2012-08-22 2016-12-27 住友電気工業株式会社 研磨用組成物および化合物半導体基板の製造方法
WO2015140850A1 (ja) * 2014-03-20 2015-09-24 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
CN110447090A (zh) * 2017-03-22 2019-11-12 三菱化学株式会社 半导体器件用基板的清洗液、半导体器件用基板的清洗方法、半导体器件用基板的制造方法和半导体器件用基板
JP7002853B2 (ja) * 2017-04-03 2022-01-20 富士紡ホールディングス株式会社 研磨パッド及びその製造方法、並びに、研磨加工品の製造方法
CN107841288A (zh) * 2017-12-12 2018-03-27 戚明海 Cmp研磨剂及其制造方法

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JP4171858B2 (ja) * 1999-06-23 2008-10-29 Ｊｓｒ株式会社 研磨用組成物および研磨方法
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
TWI291987B (en) * 2003-07-04 2008-01-01 Jsr Corp Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170128480A (ko) * 2015-03-12 2017-11-22 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 낮은 pKa 구동의 폴리머 스트리핑 동안에 전하 착화 구리 보호를 촉진하는 조성물 및 방법

Also Published As

Publication number Publication date
EP1965417A1 (en) 2008-09-03
CN101346804A (zh) 2009-01-14
TW200738852A (en) 2007-10-16
CN101346804B (zh) 2010-05-26
JP2008283203A (ja) 2008-11-20
JP2009152646A (ja) 2009-07-09
WO2007072918A1 (ja) 2007-06-28
EP1965417A4 (en) 2009-08-05
JPWO2007072918A1 (ja) 2009-06-04
EP1965417B1 (en) 2013-03-06
JP4277930B2 (ja) 2009-06-10

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PA0105 International application

Patent event date: 20080619

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid