TW200738852A - Polishing composition, polishing method, and method for forming copper wiring for semiconductor integrated circuit - Google Patents
Polishing composition, polishing method, and method for forming copper wiring for semiconductor integrated circuitInfo
- Publication number
- TW200738852A TW200738852A TW095148244A TW95148244A TW200738852A TW 200738852 A TW200738852 A TW 200738852A TW 095148244 A TW095148244 A TW 095148244A TW 95148244 A TW95148244 A TW 95148244A TW 200738852 A TW200738852 A TW 200738852A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- semiconductor integrated
- acid
- integrated circuit
- polishing composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052802 copper Inorganic materials 0.000 title abstract 4
- 239000010949 copper Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N 1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,10,10a-octahydrophenanthrene-1-carboxylic acid Chemical compound C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 abstract 5
- MHVJRKBZMUDEEV-APQLOABGSA-N (+)-Pimaric acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CC[C@](C=C)(C)C=C2CC1 MHVJRKBZMUDEEV-APQLOABGSA-N 0.000 abstract 2
- MHVJRKBZMUDEEV-UHFFFAOYSA-N (-)-ent-pimara-8(14),15-dien-19-oic acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(C=C)(C)C=C1CC2 MHVJRKBZMUDEEV-UHFFFAOYSA-N 0.000 abstract 2
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 abstract 2
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 abstract 2
- 125000002723 alicyclic group Chemical group 0.000 abstract 2
- 150000001735 carboxylic acids Chemical class 0.000 abstract 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005368082 | 2005-12-21 | ||
| JP2006125474 | 2006-04-28 | ||
| JP2006277585 | 2006-10-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200738852A true TW200738852A (en) | 2007-10-16 |
Family
ID=38188693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095148244A TW200738852A (en) | 2005-12-21 | 2006-12-21 | Polishing composition, polishing method, and method for forming copper wiring for semiconductor integrated circuit |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1965417B1 (zh) |
| JP (3) | JP4277930B2 (zh) |
| KR (1) | KR20080078840A (zh) |
| CN (1) | CN101346804B (zh) |
| TW (1) | TW200738852A (zh) |
| WO (1) | WO2007072918A1 (zh) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2008155987A1 (ja) * | 2007-06-20 | 2010-08-26 | 旭硝子株式会社 | 研磨用組成物、半導体集積回路表面の研磨方法および半導体集積回路用銅配線の作製方法 |
| EP2161737A4 (en) * | 2007-06-20 | 2010-06-23 | Asahi Glass Co Ltd | POLISHING COMPOSITION AND METHOD FOR MANUFACTURING INTEGRATED SEMICONDUCTOR ELEMENT COMPONENTS |
| JP5226278B2 (ja) * | 2007-11-08 | 2013-07-03 | 株式会社クラレ | 研磨用スラリー |
| JP5413567B2 (ja) * | 2008-02-06 | 2014-02-12 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5413566B2 (ja) * | 2008-02-06 | 2014-02-12 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| KR101562416B1 (ko) | 2008-02-06 | 2015-10-21 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법 |
| JP5413568B2 (ja) * | 2008-02-06 | 2014-02-12 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2009224771A (ja) * | 2008-02-18 | 2009-10-01 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010028079A (ja) * | 2008-02-18 | 2010-02-04 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5333742B2 (ja) * | 2008-02-18 | 2013-11-06 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010028078A (ja) * | 2008-02-18 | 2010-02-04 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010016344A (ja) * | 2008-02-18 | 2010-01-21 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5333740B2 (ja) * | 2008-02-18 | 2013-11-06 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5333741B2 (ja) * | 2008-02-18 | 2013-11-06 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010028077A (ja) * | 2008-02-18 | 2010-02-04 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| KR101563023B1 (ko) * | 2008-02-18 | 2015-10-23 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법 |
| JP5333743B2 (ja) * | 2008-02-18 | 2013-11-06 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010041027A (ja) * | 2008-02-18 | 2010-02-18 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5333744B2 (ja) * | 2008-02-18 | 2013-11-06 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法 |
| JP2009224767A (ja) * | 2008-02-18 | 2009-10-01 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5333739B2 (ja) * | 2008-02-18 | 2013-11-06 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| WO2009104465A1 (ja) * | 2008-02-18 | 2009-08-27 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| JP2010034497A (ja) * | 2008-02-18 | 2010-02-12 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| WO2009133793A1 (ja) | 2008-05-01 | 2009-11-05 | Jsr株式会社 | 化学機械研磨用水系分散体および該化学機械研磨用水系分散体を調製するためのキット、ならびに化学機械研磨方法 |
| WO2010024404A1 (ja) * | 2008-08-28 | 2010-03-04 | 旭硝子株式会社 | 研磨用組成物および半導体集積回路装置の製造方法 |
| EP2352167B1 (en) | 2008-11-10 | 2017-02-15 | Asahi Glass Company, Limited | Abrasive composition and method for manufacturing semiconductor integrated circuit device |
| JP6051679B2 (ja) * | 2012-08-22 | 2016-12-27 | 住友電気工業株式会社 | 研磨用組成物および化合物半導体基板の製造方法 |
| JPWO2015140850A1 (ja) * | 2014-03-20 | 2017-04-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
| KR102327568B1 (ko) * | 2015-03-12 | 2021-11-17 | 리지필드 액퀴지션 | 낮은 pKa 구동의 폴리머 스트리핑 동안에 전하 착화 구리 보호를 촉진하는 조성물 및 방법 |
| CN110447090A (zh) * | 2017-03-22 | 2019-11-12 | 三菱化学株式会社 | 半导体器件用基板的清洗液、半导体器件用基板的清洗方法、半导体器件用基板的制造方法和半导体器件用基板 |
| JP7002853B2 (ja) * | 2017-04-03 | 2022-01-20 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法、並びに、研磨加工品の製造方法 |
| CN107841288A (zh) * | 2017-12-12 | 2018-03-27 | 戚明海 | Cmp研磨剂及其制造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4171858B2 (ja) * | 1999-06-23 | 2008-10-29 | Ｊｓｒ株式会社 | 研磨用組成物および研磨方法 |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| TWI291987B (en) * | 2003-07-04 | 2008-01-01 | Jsr Corp | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
| DE602004026454D1 (de) * | 2003-09-30 | 2010-05-20 | Fujimi Inc | Polierzusammensetzung und polierverfahren |
| TWI347969B (en) * | 2003-09-30 | 2011-09-01 | Fujimi Inc | Polishing composition |
| US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
-
2006
- 2006-12-21 JP JP2007551155A patent/JP4277930B2/ja not_active Expired - Fee Related
- 2006-12-21 EP EP06835087A patent/EP1965417B1/en active Active
- 2006-12-21 CN CN2006800487285A patent/CN101346804B/zh not_active Expired - Fee Related
- 2006-12-21 WO PCT/JP2006/325521 patent/WO2007072918A1/ja active Application Filing
- 2006-12-21 TW TW095148244A patent/TW200738852A/zh unknown
- 2006-12-21 KR KR1020087014807A patent/KR20080078840A/ko not_active Application Discontinuation
-
2008
- 2008-06-12 JP JP2008153645A patent/JP2008283203A/ja not_active Withdrawn
-
2009
- 2009-04-06 JP JP2009092155A patent/JP2009152646A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP1965417B1 (en) | 2013-03-06 |
| JPWO2007072918A1 (ja) | 2009-06-04 |
| JP2009152646A (ja) | 2009-07-09 |
| EP1965417A4 (en) | 2009-08-05 |
| CN101346804A (zh) | 2009-01-14 |
| JP4277930B2 (ja) | 2009-06-10 |
| WO2007072918A1 (ja) | 2007-06-28 |
| EP1965417A1 (en) | 2008-09-03 |
| JP2008283203A (ja) | 2008-11-20 |
| CN101346804B (zh) | 2010-05-26 |
| KR20080078840A (ko) | 2008-08-28 |
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