JP4277930B2 - 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 - Google Patents

研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 Download PDF

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Publication number
JP4277930B2
JP4277930B2 JP2007551155A JP2007551155A JP4277930B2 JP 4277930 B2 JP4277930 B2 JP 4277930B2 JP 2007551155 A JP2007551155 A JP 2007551155A JP 2007551155 A JP2007551155 A JP 2007551155A JP 4277930 B2 JP4277930 B2 JP 4277930B2
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Japan
Prior art keywords
acid
polishing
carboxylic acid
polishing composition
copper
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Expired - Fee Related
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JP2007551155A
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English (en)
Japanese (ja)
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JPWO2007072918A1 (ja
Inventor
伊織 吉田
広幸 神谷
聡 竹宮
篤 林
伯人 中沢
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AGC Inc
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Asahi Glass Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2007551155A 2005-12-21 2006-12-21 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 Expired - Fee Related JP4277930B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2005368082 2005-12-21
JP2005368082 2005-12-21
JP2006125474 2006-04-28
JP2006125474 2006-04-28
JP2006277585 2006-10-11
JP2006277585 2006-10-11
PCT/JP2006/325521 WO2007072918A1 (ja) 2005-12-21 2006-12-21 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法

Related Child Applications (1)

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JP2008153645A Division JP2008283203A (ja) 2005-12-21 2008-06-12 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法

Publications (2)

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JPWO2007072918A1 JPWO2007072918A1 (ja) 2009-06-04
JP4277930B2 true JP4277930B2 (ja) 2009-06-10

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JP2007551155A Expired - Fee Related JP4277930B2 (ja) 2005-12-21 2006-12-21 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法
JP2008153645A Withdrawn JP2008283203A (ja) 2005-12-21 2008-06-12 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法
JP2009092155A Withdrawn JP2009152646A (ja) 2005-12-21 2009-04-06 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法

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JP2008153645A Withdrawn JP2008283203A (ja) 2005-12-21 2008-06-12 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法
JP2009092155A Withdrawn JP2009152646A (ja) 2005-12-21 2009-04-06 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法

Country Status (6)

Country Link
EP (1) EP1965417B1 (enExample)
JP (3) JP4277930B2 (enExample)
KR (1) KR20080078840A (enExample)
CN (1) CN101346804B (enExample)
TW (1) TW200738852A (enExample)
WO (1) WO2007072918A1 (enExample)

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WO2008155987A1 (ja) * 2007-06-20 2008-12-24 Asahi Glass Co., Ltd. 研磨用組成物、半導体集積回路表面の研磨方法および半導体集積回路用銅配線の作製方法
WO2008156054A1 (ja) * 2007-06-20 2008-12-24 Asahi Glass Co., Ltd. 研磨用組成物および半導体集積回路装置の製造方法
JP5226278B2 (ja) * 2007-11-08 2013-07-03 株式会社クラレ 研磨用スラリー
JP5413568B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5413567B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5413566B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
US8506359B2 (en) 2008-02-06 2013-08-13 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP5333739B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224771A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333743B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333740B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333742B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028079A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028078A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010041027A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010034497A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
WO2009104465A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
JP5333744B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
JP5333741B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028077A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224767A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016344A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
KR101610976B1 (ko) * 2008-05-01 2016-04-08 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 이 화학 기계 연마용 수계 분산체를 제조하기 위한 키트, 및 화학 기계 연마 방법
WO2010024404A1 (ja) * 2008-08-28 2010-03-04 旭硝子株式会社 研磨用組成物および半導体集積回路装置の製造方法
TWI457423B (zh) * 2008-11-10 2014-10-21 Asahi Glass Co Ltd A polishing composition, and a method for manufacturing a semiconductor integrated circuit device
JP6051679B2 (ja) * 2012-08-22 2016-12-27 住友電気工業株式会社 研磨用組成物および化合物半導体基板の製造方法
WO2015140850A1 (ja) * 2014-03-20 2015-09-24 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US10613442B2 (en) * 2015-03-12 2020-04-07 Merck Patent Gmbh Compositions and methods that promote charge complexing copper protection during low pKa driven polymer stripping
JPWO2018174092A1 (ja) * 2017-03-22 2020-01-30 三菱ケミカル株式会社 半導体デバイス用基板の洗浄液、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板
JP7002853B2 (ja) * 2017-04-03 2022-01-20 富士紡ホールディングス株式会社 研磨パッド及びその製造方法、並びに、研磨加工品の製造方法
CN107841288A (zh) * 2017-12-12 2018-03-27 戚明海 Cmp研磨剂及其制造方法

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JP4171858B2 (ja) * 1999-06-23 2008-10-29 Ｊｓｒ株式会社 研磨用組成物および研磨方法
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
TWI291987B (en) * 2003-07-04 2008-01-01 Jsr Corp Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
US7485162B2 (en) * 2003-09-30 2009-02-03 Fujimi Incorporated Polishing composition
DE602004026454D1 (de) * 2003-09-30 2010-05-20 Fujimi Inc Polierzusammensetzung und polierverfahren
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride

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Publication number Publication date
EP1965417A4 (en) 2009-08-05
JP2008283203A (ja) 2008-11-20
WO2007072918A1 (ja) 2007-06-28
KR20080078840A (ko) 2008-08-28
TW200738852A (en) 2007-10-16
CN101346804B (zh) 2010-05-26
CN101346804A (zh) 2009-01-14
EP1965417B1 (en) 2013-03-06
JP2009152646A (ja) 2009-07-09
JPWO2007072918A1 (ja) 2009-06-04
EP1965417A1 (en) 2008-09-03

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