TWI409324B - 用於含鎢基材的化學機械平坦化之組合、方法及組成物 - Google Patents
用於含鎢基材的化學機械平坦化之組合、方法及組成物 Download PDFInfo
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- TWI409324B TWI409324B TW098144607A TW98144607A TWI409324B TW I409324 B TWI409324 B TW I409324B TW 098144607 A TW098144607 A TW 098144607A TW 98144607 A TW98144607 A TW 98144607A TW I409324 B TWI409324 B TW I409324B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本案請求12/23/2008申請的美國臨時專利申請案序號61/140,216的利益。
本發明係有關用於含鎢基材的化學平坦化之組合、組成物及相關方法,其提供有關介電材料的可調整性的鎢/介電質選擇性及低選擇性的鎢移除。
本發明大體上係有關在半導體晶圓上的含鎢基材的化學機械平坦化(CMP)及用於彼的漿料組成物。特別是,本發明係有關一CMP漿料組成物,其能有效用於鎢CMP而且其為用於可調整且同時在CMP加工的期間提高相當高鎢及介電材料的移除速率之鎢CMP的低鎢/介電質選擇性漿料。在一些具體實施例中,該漿料具有歷經多個月幾乎保持不變的優良pH安定性。本發明尤其有用於鎢CMP,其中所欲為有關鎢對介電質移除的低選擇性以及在平坦化基材上的低淺碟化/柱塞凹陷。
用於半導體基材的平坦化之CMP現在已廣為熟於此藝之士所知而且在許多專利及公開的文獻刊物。有關CMP的介紹參考資料如下:在Handbook of Semiconductor Manufacturing Technology,編輯:Y. Nishi and R. Doering,Marcel Dekker,New York City(2000)中,由G. B. Shinn等人所著的"Chemical-Mechanical Polish",第15章,415至460頁。
在一典型的CMP方法中,放置一基材(例如,晶圓)使其與黏附於一托盤的旋轉研磨墊接觸。在該基材的CMP加工期間供應一CMP漿料,經常為研磨性及化學反應性混合物,給該墊子。在該CMP方法的期間,使該墊子(固定於該托盤)及基材同時使一晶圓承載系統或研磨頭靠著該基材施壓(向下作用力)。該漿料藉由與該墊子相對於該基材的旋轉運動的效應使該基材薄膜被平坦化而產生化學及機械交互作用來完成該平坦化(研磨)方法。依此方式持續研磨直到配合能將該基材有效平坦化的常見目的移除該基材上想要的薄膜為止。金屬CMP漿料經常含有懸浮於氧化性含水介質中的研磨性材料,例如矽石或礬土。
有大量的材料均用於例如半導體晶圓的積體電路之製造中。該等材料一般均落在三種分類範圍以內-介電物、黏著及/或阻障層及傳導層。各種不同基材,例如,如四乙基原矽酸鹽(TEOS)、電漿增強四乙基原矽酸鹽(PETEOS)、低-k介電材料等的介電材料;如鉭、鈦、氮化鉭及氮化鈦等的阻障/黏著層;以及如銅、鋁、鎢及貴重金屬等的傳導層在此產業中乃習知。
積體電路透過使用眾所皆知的多層互連件相互連結。互連結構普通具有金屬化的第一層、互連層、金屬化的第二層及通常金屬化的第三及後續層。如二氧化矽及有時候低-k材料等的層間介電材料係用以電絕緣矽基材或井中的不同金屬化層。不同互連層之間的電氧連結係透過使用金屬化通孔及特別是鎢通孔做到。用於製備多層金屬化層及絕緣薄膜中的金屬化通孔的方法乃習知。以類似的方式,使用金屬接點來形成互連層及井中所形成的元件之間的電氣連結。該等金屬通孔及接點一般均填充鎢而且一般運用如氮化鈦(TiN)及/或鉭等的黏附層以便將如鎢金屬層的金屬層黏附於該介電材料。
在一半導體製造方法中,金屬化通孔或接點係藉由覆蓋鎢沉積接著CMP步驟形成。在典型的方法中,通孔穿過該層間介電質蝕刻至互連線或至半導體基材。接下來,如氮化鈦及/或鈦的黏附層一般形成在該ILD上方而且導入該蝕刻的通孔內。接著,將一鎢薄膜覆蓋沉積在該黏附層上方及該通孔內。持續此沉積直到以鎢填滿該通孔為止。最後,藉由化學機械研磨(CMP)移除過量的鎢以形成金屬通孔。
該金屬(例如,鎢)的移除速率對該介電基底的移除速率之比例在包含金屬及介電材料的基材的CMP加工期間叫做金屬移除相對於介電質移除的“選擇性”。當使用有關金屬相對於介電質的移除具有高選擇性的CMP漿料時,該等金屬層易於過度研磨而在該等金屬化區域中造成凹陷或“淺碟化”效應。此特徵扭曲由於半導體製造時的微刻及其他束縛條件而無法接受。
不適用於半導體製造的另一特徵扭曲叫做“侵蝕”。侵蝕為介電質領域及金屬通孔或溝槽的緻密陣列之間的形貌差異。在CMP中,該緻密陣列中的材料可以比該介電質的周圍領域更快的速率下被移除或侵蝕。這造成該介電質領域與該緻密金屬(例如,銅或鎢)陣列之間的形貌差異。
當產業基準越來越趨向較小元件特徵時,對於能給與優異平坦化的積體電路(IC)晶片奈米結構的CMP漿料有持續發展的需求。明確地說,有關45nm(奈米)的科技節點及更小的特徵大小,漿料產物必須給與在金屬與介電質之間的低移除速率選擇性,藉以降低侵蝕同時維持充分的移除速率及缺點量。再者,在CMP消耗品的競爭市場中,低擁有成本者(CoO),明確地說透過CMP漿料的集中研究,迅速地變成一產業基準。
一般使用的CMP漿料有兩種作用,化學成分與機械成分。漿料選擇的重要考量係“鈍態蝕刻速率”。鈍態蝕刻速率係金屬(例如,銅)單獨被化學成分溶解的速率,而且必須要明顯低於同時涉及化學成分與機械成分時的移除速率。大的鈍態蝕刻速率導致金屬溝槽與通孔的淺碟化,而且因此,較佳地,該鈍態蝕刻速率係低於每分鐘10奈米。
這些是可加以研磨的兩種共通類型的層。第一層為ILD,例如氧化矽及氮化矽。第二層為金屬層,例如鎢、銅、鋁等等,其係用以連結主動元件。
在金屬的CMP之案例中,該化學作用一般都會考慮採取二形式其中之一。在第一機構中,溶液中的化學藥品與該金屬層起反應而在該金屬表面上連續地形成氧化層。這一般都需要添加例如過氧化氫、硝酸鐵等等之氧化劑至該溶液。粒子的機械研磨作用會連續地並同時地移除此氧化層。就移除速率及研磨面品質的觀點來看,均衡考量此二方法將獲得最適宜的結果。
在第二機構中,並未形成保護性氧化層。而是,該溶液中的組成成分以化學的方式攻擊並且使該金屬溶解,同時該機械作用大部分都是藉由以下的方法以機械方式增進分解速率的方法,例如使更多表面積連續地暴露於化學攻擊底下,藉由該等粒子與該金屬之間的摩擦提高局部溫度(可提高分解速率),以及藉由混合與藉由降低邊界層的厚度而增進反應物與產物到達與離開表面的擴散現象。
該漿料組成物為該CMP步驟中之一重要因子。根據氧化劑、研磨劑及其他有用的添加物的選擇,該研磨漿料可經訂做以提供於預期的研磨速率下有效研磨金屬層同時使含鎢通孔的區域中的氧化物之表面瑕疵、缺陷、腐蝕及侵蝕減至最少。再者,該研磨漿料可用以提供經控制的研磨選擇性給其他用於現代積體電路技術中的薄膜材料,例如鈦及氮化鈦等。
尤其是就事實上該半導體產業持續朝越來越小的特徵尺寸移動的觀點來看對於能提供低淺碟化及柱塞凹陷效應的金屬CMP方法及漿料有明顯的需求。本發明提供針對此顯著需求之一解決方法。
有一具體實施例中,本發明為一種與基材表面接觸的化學機械研磨組成物之組合,該基材表面上具有至少一包含鎢的特徵,該組合包含:
a)一基材,其包含次微米積體電路而且其表面上具有至少一包含鎢的特徵,該基材表面與一化學機械研磨組成物接觸,該化學機械研磨組成物包含:
b)過碘酸;及
c)一研磨劑;
其中該過碘酸及該研磨劑係以足以使該基材表面變成實質平面及當研磨於4每平方吋磅數(psi)的向下作用力下進行時藉由其化學機械研磨使鎢的移除速率維持於至少每分鐘800埃的合併量存在。在一具體實施例中,該基材表面上也具有至少一包含介電材料的特徵。
在另一具體實施例中,本發明為一種用於化學機械研磨上面具有至少一包含鎢的特徵的表面之方法,該方法包含下列步驟:
A)放置使一基材與一研磨墊接觸,該基材表面上具有至少一包含鎢的特徵;
B)遞送一研磨組成物,其包含:
a)一研磨劑;
b)過碘酸;以及
C)利用該研磨組成物研磨該基材。
本發明涉及在此說明用於含鎢基材的化學平坦化之組合、漿料及相關方法。該組合為與基材表面接觸的化學機械研磨組成物之組合,該基材表面上具有至少一包含鎢的特徵。因為在製造積體電路時半導體產業趨向越來越小的特徵尺寸,所以CMP加工期間在半導體基材上的淺碟化/侵蝕及特徵的柱塞凹陷之最小化及預防變得越來越重要。
在此所述的鎢CMP漿料組成物及組合滿足低選擇性的鎢移除速率對介電質移除速率的需求。此共通組成物由研磨劑、當作氧化劑的過碘酸及,在一些具體實施例中,螯合劑構成。藉由變化研磨劑對氧化劑的比例,移除速率及選擇性二者均可調整為特定應用所欲者。添加適當的螯合劑同時提供pH調整及有關pH偏移的安定性。該螯合劑也能藉由推昇鎢移除速率而且藉以降低能獲得特定鎢移除速率所需要的氧化劑量而降低擁有成本。
在本發明中,該氧化劑為過碘酸(PIA)。該漿料中的過碘酸量可介於約0.1重量百分比至約15重量百分比,而且,舉例來說可介於約0.1重量百分比至約5重量百分比。有一具體實施例中,該過碘酸介於約0.2重量百分比至約5重量百分比。在另一具體實施例中,該過碘酸介於約0.5至約2重量百分比。
適用於本發明的研磨劑包括,但不限於,礬土、鈰土、氧化鍺、矽石、鈦土、鋯土及其混合物。有一具體實施例中,該等研磨劑為矽石(膠質氧化矽或發煙氧化矽)。有一具體實施例中,該研磨劑為膠質氧化矽。該漿料中的研磨劑量可廣泛地介於該漿料總重量的約0.1重量百分比至約25重量百分比及,舉例來說,可介於約0.1重量百分比至約15重量百分比。有一具體實施例中,該研磨劑量介於約2重量百分比至約15重量百分比,以及,在另一具體實施例中,介於約4重量百分比至約14重量百分比,舉例來說,介於約5重量百分比至約13重量百分比。在一較佳具體實施例中,該研磨劑量介於約5重量百分比至約13重量百分比。
在一較佳具體實施例中,該過碘酸量在漿料中介於約0.9重量百分比至約2重量百分比,其中該研磨劑量介於約5重量百分比至約13重量百分比。如該等實施例所示,據發現漿料具有介於約0.73至約1.12的低鎢:介電質(明確地說W:TEOS)選擇性值,其隨著該過碘酸的量相對於該研磨劑(例如,膠質氧化矽)的量而變化。
在一些具體實施例中,該組成物及組合另外包含一胺基醇化合物,其兼具當作螯合劑以及當作pH調節劑的雙重功能,該pH調節劑用以提高所得的組成物的pH。再者,該胺基醇化合物亦為一安定劑。該螯合功能對於在CMP加工的期間推昇金屬移除速率有所助益而且該胺基醇化合物的基本性質可用於提高過碘酸-為底的漿料之pH值,該等過碘酸-為底的漿料非常酸。工業上在降低或消除與此等非常低pH的漿料有關的潛在可能性腐蝕及安全問題時非常想要把漿料pH值從1至2左右提高至3或更高。驚人而且意外地,據發現當此種成分存在於漿料中時,就pH偏移來看如2-(2-胺基乙氧基)乙醇等的胺基醇化合物能賦予漿料長期安定性及壽命。如實施例中所示的,此發明性過碘酸為底的漿料利用存在於該漿料中的2-(2-胺基乙氧基)乙醇維持約3.5之近乎不變的pH多個月。有一具體實施例中,該胺基醇化合物係選自由2-(2-胺基乙氧基)乙醇、2-(2-胺基乙基胺基)乙醇、二乙醇胺、乙醇胺、三乙醇胺及其混合物所組成的群組。有一具體實施例中,該胺基醇化合物為2-(2-胺基乙氧基)乙醇。
若有的話,該胺基醇化合物的量可介於約0.1重量百分比至約5重量百分比。有一具體實施例中,該量介於約0.1重量百分比至約2重量百分比,而且,在另一具體實施例中,該量介於約0.1重量百分比至約1重量百分比。有一具體實施例中,一胺基醇化合物係存在於該組成物及組合中而且pH介於約pH 1至約pH 4。在另一具體實施例中,一胺基醇化合物係存在於該組成物及組合中而且pH介於約pH 5至約pH 10。
其他可加至該CMP漿料組成物的化學藥品包括,舉例來說,表面活性劑、pH調節劑、酸類、腐蝕抑制劑、含氟化合物、螯合含氟化合物、螯合劑、含氮化合物及鹽類。
可加至該漿料組成物的適合表面活性劑化合物包括,舉例來說,熟於此藝之士所習知的眾多非離子型、陰離子型、陽離子型或兩性表面活性劑之任何者,該等表面活性劑化合物可以約0重量%至約1重量%的濃度存在於該漿料組成物中而且,若存在的話,較佳以該漿料總重量的約0.001重量%至約0.1重量%的濃度存在於該漿料組成物。較佳的表面活性劑類型為非離子型、陰離子型或其混合物而且最佳以該漿料總重量的約10ppm至約1000ppm的濃度存在。適合的非離子型表面活性劑為Surfynol104E,其係以2,4,7,9-四甲基-5-癸炔-4,7-二醇及乙二醇(溶劑),(賓夕凡尼亞州,亞林鎮,Air Products and Chemicals有限公司)的重量計的50:50混合物。適合的陰離子型表面活性劑包括溴化十六基三甲基銨及月桂基硫酸銨。
(初始或附加)pH調節劑可用以改善該研磨組成物的安定性,改善處理及使用時的安全性,或符合各種不同規定的要求。用以降低本發明的研磨組成物的pH之適合的pH調節劑或附加的pH調節劑包括,但不限於,氫氯酸、硝酸、硫酸、氯醋酸、酒石酸、丁二酸、檸檬酸、蘋果酸、丙二酸、各種不同的脂肪酸、各種不同的聚羧酸類及其混合物。用以提高本發明的研磨組成物的pH之適合的pH調節劑或附加的pH調節劑包括,但不限於,氫氧化鉀、氫氧化鈉、氫氧化銨、氫氧化四甲基銨、乙二胺、六氫吡嗪、聚乙烯亞胺、經改質的聚乙烯亞胺類及其混合物。
可加至該漿料組成物的適合的酸化合物包括,但不限於,甲酸、醋酸、丙酸、丁酸、戊酸、己酸、庚酸、辛酸、壬酸、乳酸、氫氯酸、硝酸、磷酸、硫酸、氫氟酸、蘋果酸、酒石酸、葡萄糖醛酸、檸檬酸、苯二甲酸、焦兒茶酸、焦棓酚羧酸、沒食子酸、單寧酸及其混合物。這些酸化合物皆可以該漿料總重量之約0重量%至約1重量%的濃度存在於漿料組合物中。
可添加至該漿料組合物之適合(初始或附加)的螯合劑包括,但不限於,乙二胺四醋酸(EDTA)、N-羥乙基乙二胺三醋酸(NHEDTA)、硝基三醋酸(NTA)、二乙三胺五醋酸(DPTA)、乙醇二甘胺酸、三羥甲基甲基甘胺酸(tricine)、2,2'-聯吡啶、酒石酸、胺基戊二酸、天門冬酸、麩胺酸、L-天冬門酸、L-色胺酸、L-天門冬素、L-精胺酸及其混合物。該螯合劑可以約0重量%至約3重量%的濃度存在於該漿料組成物中,而且較佳地以該漿料總重量之約0.05重量%至約0.20重量%的濃度存在。
可添加至該漿料組合物之適合的含氮化合物包括,但不限於,氫氧化銨、羥基胺、單乙醇胺、二乙醇胺、三乙醇胺、二乙二醇胺、N-羥乙基六氫吡嗪、聚乙烯亞胺、經改質的聚乙烯亞胺及其混合物。適合的含氮化合物也包括各種不同的胺基酸類。適合的胺基酸類包括,但不限於,丙胺酸、精胺酸、天門冬素、天門冬酸、半胱胺酸、胺基戊二酸、麩胺酸、胺基醋酸、組胺酸、異白胺酸、白胺酸、離胺酸、蛋胺酸(methionine)、苯基丙胺酸、脯胺酸、絲胺酸、羥丁胺酸、色胺酸、酪胺酸及纈草胺酸。有一具體實施例中,該胺基酸為胺基醋酸。該等含氮化合物可以約0重量%至約1重量%的濃度存在於該漿料組成物中,而且較佳地以該漿料總重量之約0.01重量%至約0.20重量%的濃度存在。
可添加至該漿料組合物之適合的鹽類包括,但不限於,過硫酸銨、過硫酸鉀、亞硫酸鉀、碳酸鉀、硝酸銨、氫苯二甲酸鉀、硫酸羥胺及其混合物。該鹽類可以約0重量%至約10重量%的濃度存在於該漿料中,且較佳地係以該漿料總重量之約0重量%至約5重量%的濃度存在。較佳的鹽係硝酸銨,且最佳係以漿料總重量之約0重量%至約0.15重量%的濃度存在。
還有其他可添加至該漿料組合物的化學物質係生物製劑,例如殺菌劑、生物殺滅劑及殺黴菌劑,尤其是若pH在約6至9左右的話。適合的生物殺滅劑包括,但不限於,1,2-苯并異噻唑啉-3-酮;2-(羥甲基)胺基乙醇;1,3-二羥甲基-5,5-二甲基乙內醯脲;1-羥甲基-5,5-二甲基乙內醯脲;3-碘-3-丙炔基丁基胺基甲酸酯;戊二醛;1,2-二溴-2,4-二氰基丁烷;5-氯-2-甲基-4-異噻唑啉-3-酮;2-甲基-4-異噻唑啉-3-酮及其混合物。
與本發明相關的漿料組成物可具有廣泛地介於約1至約11的pH值而且較佳介於約1.5至約5,例如約2至約4。有一具體實施例中,該pH介於約2至約4;在另一具體實施例中,該pH介於約5至約10。在本發明的許多應用中,例如鎢的CMP,較佳為介於約2至約4的pH值。具有低於2的pH可提高有關安全及於這些低pH值下發生的腐蝕意外。有關鎢的CMP具有高於約4的pH會造成顯著降低的鎢移除速率而且可能使該膠質氧化矽不安定。
本發明的相關方法必然伴隨使用上述用於基材之化學機械平坦化的組合物(如先前揭示的),該基材包含金屬與介電材料。此方法中,基材(例如,晶圓)面向下放在一研磨墊上,該研磨墊固定地黏貼於CMP研磨機之可旋轉托盤上。依此方式,放置使要研磨並且平坦化的基材與研磨墊直接接觸。使用晶圓承載系統或研磨頭部將基材固持於定位,並且在CMP加工期間對基材背側施加向下的壓力,同時使托盤與基材旋轉。在CMP加工期間在該墊上施加(通常連續地)研磨組合物(漿料)以有效移除材料而使基材平坦化。
在本發明的組合及相關的方法中,當研磨於4psi的向下作用力下進行時藉由其化學機械研磨使鎢的移除速率維持於至少每分鐘800埃。當使用大於4psi的向下作用力時將達到較高的移除速率。有一具體實施例中,鎢的移除速率為至少每分鐘1000埃。在其他具體實施例中,鎢的移除速率為至少每分鐘1200埃,每分鐘1500埃,及每分鐘2000埃。
如上所示,本發明的具體實施例為與基材表面接觸的化學機械研磨組成物之組合,該基材表面上具有至少一包含鎢的特徵。有一具體實施例中,該基材表面上也具有至少一包含介電材料的特徵。有一具體實施例中,該介電材料為氧化矽。
在根據本發明的組合及方法的具體實施例中,可調整的鎢/介電質選擇性係利用該組成物化學機械研磨該基材而實行,該選擇性取決於該研磨劑的量相對於該過碘酸的量。在根據本發明的組合及方法的具體實施例中,有一案例中該鎢/介電質選擇性介於約0.5至約1.5,在另一案例中介於約0.7至約1.3,而且在又另一案例中介於約0.8至約1.2。
本發明將進一步藉由以下的實施例加以證實。
除非另行指明,否則所有的百分比皆為重量百分比。
在以下所示的實施例中,使用以下提供的的步驟與實驗條件進行CMP實驗。
在CMP的期間使用研磨墊Politex及IC1000,由Rohm & Haas有限公司供應。
:埃-長度的單位
BP:背壓,以psi為單位
CMP:化學機械平坦化=化學機械研磨
CS:載具速度
DF:向下作用力:CMP期間施加的壓力,單位psi
min:分鐘
ml:毫升
mV:毫伏特
psi:每平方吋磅
PS:研磨機具的托盤轉動速度,單位rpm(每分鐘轉數)
SF:漿料流速,ml/min
wt. %:(所列舉的成分的)重量百分比。
W:TEOS選擇性:W的移除速率/TEOS的移除速率。
鎢移除速率:CMP機具以4.5psi向下施壓時測量到的鎢移除速率
在以下所示的實施例中,使用以下提供的的步驟與實驗條件進行CMP實驗。
鎢膜利用加州,95014,庫比蒂諾市歐安利博士路20565號之Creative Design Engineering有限公司製造的ResMap CDE,168型,加以測量。此ResMap機具係四點探針型面電阻機具。在距離邊緣5毫米處進行四十九點直徑掃描。
所用的CMP機具係由加州,95054,聖塔克拉克市,布拉耳士大道3050號之Applied Materials公司製造的Mirra。在托盤1上使用IC1000,有一溝紋堆疊在德拉威州19713,紐華克市,貝勒優路451號的Rohm & Haas有限公司所供應的suba IV墊子上,以供空白及圖案晶圓的研究。在托盤3上使用Politex墊子,由Rohm & Haas公司供應,供經過托盤1上研磨之後的TEOS缺陷晶圓用。
該IC1000墊子係藉由調節器於7lbs向下作用力下調節該墊子18分鐘而破損。該Politex墊子係利用去離子水研磨20個TEOS仿晶圓而破損。為了使機具設定及墊子試運轉適合,以基準條件利用DuPont Air Products NanoMaterials L.L.C.所供應的MicroplanarCMP3850研磨二鎢監視器及二TEOS監視器。
在空白晶圓(blanket wafer)研究中,於基準條件下研磨鎢空白晶圓。該機具基準條件為:工作檯速度:120rpm;頭部速度:123rpm;膜壓:4.0psi;管內壓力:5.0psi;保持環壓力:6.5psi;漿料流速:200ml/min。
利用CVD沉積的鎢晶圓進行研磨實驗。這些空白晶圓係由加州,95054,聖塔克拉克市,喀富爾路2985號之Silicon Valley Microelectronics公司所購得。該膜厚度規格總結如下:W:8,000CVD鎢;240TiN;5000TEOS在矽上。
製造批量3kg的漿料樣品,其具有如表1所示的重量百分比組成物(在各個案例中水為該組成物其餘部分的第三成分)。該等樣品各自含有膠質氧化矽、過碘酸及去離子水。該膠質氧化矽為亞利桑那州85282,碧潭谷,伊利德西路2441號之DuPont Air Products NanoMaterials,L.L.C.所供應的MicroPlanarCMP3850而且供應時具有約3的pH。過碘酸亦係由DuPont Air Products NanoMaterials,L.L.C獲得。
CMP實驗利用鎢及TEOS空白晶圓在該Mirra機具上,讓所有樣品均使用下列條件進行:4.0psi的向下作用力、150cc/min的漿料流速及120rpm的工作檯旋轉速度。該研磨機具於4psi的向下作用力下測量鎢及TEOS二者的移除速率。將這些記載於表1中而且用以計算表1中所記載的W:TEOS選擇性數值。
表1中總結樣品1至12所獲得的組成物及結果(對應於實施例1至12)。所獲得的結果證實就鎢/TEOS選擇性來看這些漿料可藉由變化該膠質氧化矽的量對該過碘酸的量之比例而調整。該W:TEOS選擇性隨著過碘酸量增加及膠質氧化矽量減少而提高。
配製批量3kg的漿料,其含有10重量百分比的膠質氧化矽、1.11重量百分比的過碘酸及水(此組成物其餘的部分)。此漿料係用於不同陣列(如表2中所記載的)的圖案化晶圓上的研磨實驗。在研磨不同晶圓的期間於中心、中間及邊緣晶粒位置測量所蒙受的侵蝕數值係判定成表2中所記載的三不同過度研磨(OP)水準(15%、30%及60%)。結果證實於提高達到60%的過度研磨水準下利用此漿料研磨的期間所蒙受的侵蝕程度有少許變化,那將會非常理想。
在這些實施例中,證實了2-(2-胺基乙氧基)乙醇兼具有螯合劑及pH調節劑的效果。製成如表3所示的二樣品,二者均含有1.25重量百分比的PIA及9重量百分比的膠質氧化矽。實施例14的樣品不含任何2-(2-胺基乙氧基)乙醇,而實施例15的樣品含有在0.582重量百分比的量下之此成分。所獲得的比較性結果係顯示於表3中而且戲刻性的演變為若此螯合劑/pH調節劑存在的話將顯著推昇該鎢移除速率,同時也使最終的pH提高將近2pH單位至將近3.5(就於較低pH時的腐蝕及安全關係來看該pH值非常理想,優於實施例14的1.59的較低pH)。
在這些實施例中,在有及沒有2-(2-胺基乙氧基)乙醇存在之下製備二PIA/膠質氧化矽漿料,如表4中所示。實施例16不含有此成分,而實施例17則含有此成分。同樣地在實施例18中利用氫氧化銨代替2-(2-胺基乙氧基)乙醇製備一PIA/膠質氧化矽漿料。監視這些漿料的pH 7個月,如表4中所示。結果基本上證實含有2-(2-胺基乙氧基)乙醇當作pH調節劑/螯合劑的實施例17漿料以及沒有此添加物的實施例16漿料維持固定不變的pH。在鮮明的對照之下,在用氫氧化銨代替2-(2-胺基乙氧基)乙醇的實施例18漿料中發現明顯的pH變化。類似於該實施例18漿料的結果能利用氫氧化鉀代替氫氧化銨獲得。
Claims (16)
- 一種與基材表面接觸的化學機械研磨組成物之組合,該基材表面上具有至少一包含鎢的特徵及至少一包含介電材料的特徵,該組合包含:一基材,其包含積體電路而且其表面上具有至少一包含鎢的特徵,該基材表面與一化學機械研磨組成物接觸,該化學機械研磨組成物包含:a)過碘酸;b)一研磨劑;及c)一胺基醇化合物,其中該化學機械研磨組成物使該基材表面變成實質平面及當研磨於4 psi的向下作用力下進行時藉由其化學機械研磨使鎢的移除速率維持於至少每分鐘800埃;而且在使用該組成物化學機械研磨該基材時,一介於0.5至1.5的可調整的鎢/介電質選擇性被實行。
- 如申請專利範圍第1項之組合,其中該介電材料為氧化矽。
- 如申請專利範圍第1項之組合,其中該胺基醇化合物係選自由2-(2-胺基乙氧基)乙醇、2-(2-胺基乙基胺基)乙醇、二乙醇胺、乙醇胺、三乙醇胺及其混合物所組成的群組。
- 如申請專利範圍第3項之組合,其中該胺基醇化合物為2-(2-胺基乙氧基)乙醇。
- 如申請專利範圍第1項之組合,其另外包含一pH調節劑,其中該組成物具有介於pH 1至pH 4的pH。
- 如申請專利範圍第1項之組合,其中該過碘酸係以0.1重量百分比至5重量百分比的量存在。
- 如申請專利範圍第1項之組合,其中該研磨劑係以0.1至15重量百分比的量存在。
- 一種用於化學機械研磨上面具有至少一包含鎢的特徵及至少一包含介電材料的特徵的表面之方法,該方法包含下列步驟:A)放置使一基材與一研磨墊接觸,該基材表面上具有至少一包含鎢的特徵;B)遞送一研磨組成物,其包含:a. 一研磨劑;b. 過碘酸;及c. 一胺基醇化合物,以及C)利用該研磨組成物研磨該基材;其中在使用該研磨組成物化學機械研磨該基材時,一 介於0.5至1.5的可調整的鎢/介電質選擇性被實行。
- 如申請專利範圍第8項之方法,其中該介電材料為氧化矽。
- 如申請專利範圍第8項之方法,其中該胺基醇化合物係選自由2-(2-胺基乙氧基)乙醇、2-(2-胺基乙基胺基)乙醇、二乙醇胺、乙醇胺、三乙醇胺及其混合物所組成的群組。
- 如申請專利範圍第10項之方法,其中該胺基醇化合物為2-(2-胺基乙氧基)乙醇。
- 如申請專利範圍第8項之方法,其另外包含一pH調節劑,其中該組成物具有介於pH 1至pH 4的pH值。
- 如申請專利範圍第8項之方法,其另外包含一pH調節劑,其中該組成物具有介於pH 5至pH 10的pH值。
- 如申請專利範圍第8項之方法,其中該過碘酸係以0.1重量百分比至5重量百分比的量存在。
- 如申請專利範圍第8項之方法,其中該研磨劑係以0.1至15重量百分比的量存在。
- 一種用於鎢及介電基材表面的化學平坦化的研磨組成物,其包含:a)一研磨劑,其用量從0.1至15重量百分比;b)過碘酸,其用量從0.1重量百分比至5重量百分比;c)一胺基醇化合物,其係選自由2-(2-胺基乙氧基)乙醇、2-(2-胺基乙基胺基)乙醇、二乙醇胺、乙醇胺及三乙醇胺所組成的群組;該研磨組成物能使該基材表面變成實質平面及當研磨於4 psi的向下作用力下進行時藉由其化學機械研磨使鎢的移除速率維持於至少每分鐘800埃,而且具有介於0.5至1.5的鎢/介電質選擇性。
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KR20100074077A (ko) | 2010-07-01 |
KR101053712B1 (ko) | 2011-08-02 |
US20130288479A1 (en) | 2013-10-31 |
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US8506831B2 (en) | 2013-08-13 |
US8790521B2 (en) | 2014-07-29 |
US20100159698A1 (en) | 2010-06-24 |
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