KR20060047778A - 유기 전기 소자 - Google Patents
유기 전기 소자 Download PDFInfo
- Publication number
- KR20060047778A KR20060047778A KR1020050039489A KR20050039489A KR20060047778A KR 20060047778 A KR20060047778 A KR 20060047778A KR 1020050039489 A KR1020050039489 A KR 1020050039489A KR 20050039489 A KR20050039489 A KR 20050039489A KR 20060047778 A KR20060047778 A KR 20060047778A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- organic compound
- type organic
- compound layer
- type
- Prior art date
Links
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 240
- 238000004770 highest occupied molecular orbital Methods 0.000 claims abstract description 64
- 238000002347 injection Methods 0.000 claims abstract description 64
- 239000007924 injection Substances 0.000 claims abstract description 64
- 238000004776 molecular orbital Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 617
- 230000005525 hole transport Effects 0.000 claims description 57
- 239000011368 organic material Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 24
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 claims description 24
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical group FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 claims description 21
- 239000012044 organic layer Substances 0.000 claims description 14
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229920001940 conductive polymer Polymers 0.000 claims description 10
- -1 fluorine-substituted 3,4, 9,10-perylenetetracarboxylic Chemical class 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- DMEVMYSQZPJFOK-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene Chemical group N1=NN=C2C3=CC=CC=C3C3=CC=NN=C3C2=N1 DMEVMYSQZPJFOK-UHFFFAOYSA-N 0.000 claims description 5
- 239000012780 transparent material Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 description 39
- 238000000151 deposition Methods 0.000 description 38
- 230000008021 deposition Effects 0.000 description 32
- 230000032258 transport Effects 0.000 description 32
- 239000011521 glass Substances 0.000 description 31
- 230000000052 comparative effect Effects 0.000 description 26
- 229910052782 aluminium Inorganic materials 0.000 description 21
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 15
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 239000012153 distilled water Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 150000003967 siloles Chemical class 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002181 crystalline organic material Substances 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N cyclobenzothiazole Natural products C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000002186 photoelectron spectrum Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000885 poly(2-vinylpyridine) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- CRUIOQJBPNKOJG-UHFFFAOYSA-N thieno[3,2-e][1]benzothiole Chemical compound C1=C2SC=CC2=C2C=CSC2=C1 CRUIOQJBPNKOJG-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
@50mA/cm2 | @100mA/cm2 | |||
전압(V) | 휘도(cd/cm2) | 전압(V) | 휘도(cd/cm2) | |
실시예 4 | 5.12 | 1616 | 5.85 | 3326 |
실시예 5 | 4.82 | 1628 | 5.57 | 3323 |
실시예 6 | 4.93 | 1035 | 5.67 | 2138 |
실시예 7 | 4.87 | 1170 | 5.67 | 2443 |
@50mA/cm2 | @100mA/cm2 | |||
전압(V) | 휘도(cd/cm2) | 전압(V) | 휘도(cd/cm2) | |
실시예 8 | 4.8 | 642.0 | 5.6 | 1316.0 |
비교예 3 | 17.7 | 15.4 | 18.3 | 31.9 |
비교예 4 | 19.9 | 21.9 | 20.5 | 47.1 |
Claims (25)
- 정공을 주입 또는 추출하는 제1 전극으로서, 도전층 및 상기 도전층위에 위치하는 n-형 유기물층을 포함하는 제1 전극;전자를 주입 또는 추출하는 제2 전극; 및상기 제1 전극의 도전층과 상기 제2 전극의 사이에 위치하는 p-형 유기물층으로서, 상기 제1 전극의 상기 n-형 유기물층과 상기 p-형 유기물층의 사이에서 NP접합을 형성하는 p-형 유기물층을 포함하고,상기 제1 전극의 상기 n-형 유기물층의 LUMO(lowest unoccupied molecular orbital) 에너지 준위와 상기 제1 전극의 상기 도전층의 페르미 에너지 준위의 에너지 차이가 약 2eV 이하이고; 및상기 제1 전극의 상기 n-형 유기물층의 상기 LUMO 에너지 준위와 상기 p-형 유기물층의 HOMO(highest occupied molecular orbital) 에너지 준위의 에너지 차이가 약 1eV 이하인 것을 특징으로 하는 전기 소자.
- 제1항에 있어서, 상기 p-형 유기물층은 정공 주입층, 정공 수송층, 또는 발광층을 포함하는 것을 특징으로 하는 전기소자.
- 제1항에 있어서, 상기 p-형 유기물층과 상기 제2 전극의 사이에 적어도 하나 유기물층을 더 포함하고,상기 적어도 하나의 유기물층은 정공 수송층, 발광층 또는 전자 수송층을 포함하는 것을 특징으로 하는 전기소자.
- 제1항에 있어서, 상기 제1 전극의 n-형 유기물층은 2,3,5,6-테트라플루오로-7,7,8,8-테트라시아노퀴노디메탄(F4TCNQ), 불소-치환된 3,4,9,10-페릴렌테트라카르복실릭 디안하이드라이드(PTCDA), 시아노-치환된 PTCDA, 나프탈렌테트라카르복실릭 디안하이드라이드(NTCDA), 불소-치환된 NTCDA, 시아노-치환된 NTCDA, 또는 헥사니트릴 헥사아자트리페닐렌(HAT)을 포함하는 것을 특징으로 하는 전기소자.
- 제1항에 있어서, 상기 제1 전극의 상기 도전층은 금속, 금속 산화물 또는 도전성 폴리머를 포함하는 것을 특징으로 하는 전기소자.
- 제1항에 있어서, 상기 제1 전극의 도전층과 상기 제2 전극은 동일한 물질로 형성된 것을 특징으로 하는 전기소자.
- 도전층 및 상기 도전층위에 위치하는 n-형 유기물층을 포함하는 양극(anode);음극(cathode); 및상기 양극의 도전층과 상기 음극의 사이에 위치하는 p-형 유기물층으로서, 상기 양극의 n-형 유기물층과 상기 p-형 유기물층의 사이에서 NP접합을 형성하는 p-형 유기물층을 포함하고,상기 양극의 상기 n-형 유기물층의 LUMO 에너지 준위와 상기 양극의 상기 도전층의 페르미 에너지 준위의 에너지 차이가 약 2eV 이하이고; 또한상기 양극의 상기 n-형 유기물층의 상기 LUMO 에너지 준위와 상기 p-형 유기물층의 HOMO 에너지 준위의 에너지 차이가 약 1eV 이하인 것을 특징으로 하는 유기 발광 소자.
- 제7항에 있어서, 상기 p-형 유기물층은 p-형 정공 주입층을 포함하고; 및상기 유기 발광 소자는 상기 p-형 정공 주입층과 상기 음극의 사이에 위치하는 적어도 하나의 유기물층을 더 포함하는 것을 특징으로 하는 유기 발광 소자.
- 제8항에 있어서, 상기 적어도 하나의 유기물층은 상기 p-형 정공 주입층위에 위치하는 정공 수송층, 상기 정공 수송층위에 위치하는 발광층, 또는 상기 발광층위에 위치하는 전자 수송층을 포함하는 것을 특징으로 하는 유기 발광 소자.
- 제9항에 있어서, 상기 발광층은 n-형 발광층과 p-형 발광층을 포함하는 것을 특징으로 하는 유기 발광 소자.
- 제7항에 있어서, 상기 p-형 유기물층은 p-형 정공 수송층을 포함하고; 및상기 유기 발광 소자는 상기 p-형 정공 수송층과 상기 음극의 사이에 위치하 는 적어도 하나의 유기물층을 더 포함하는 것을 특징으로 하는 유기 발광 소자.
- 제11항에 있어서, 상기 적어도 하나 유기물층은 상기 p-형 정공 수송층위에 위치하는 발광층 또는 상기 발광층위에 위치하는 전자 수송층을 포함하는 것을 특징으로 하는 유기 발광 소자.
- 제12항에 있어서, 상기 발광층은 n-형 발광층과 p-형 발광층을 포함하는 것을 특징으로 하는 유기 발광 소자.
- 제7항에 있어서, 상기 p-형 유기물층은 p-형 발광층을 포함하고; 및상기 유기 발광 소자는 상기 p-형 발광층과 상기 음극의 사이에 위치하는 유기물층을 더 포함하고, 상기 유기물층은 전자 수송층을 포함하는 것을 특징으로 하는 유기 발광 소자.
- 제7항에 있어서, 상기 양극의 상기 도전층 및 상기 음극 중 적어도 하나는 투명 물질을 포함하는 것을 특징으로 하는 유기 발광 소자.
- 제7항에 있어서, 상기 양극의 도전층과 상기 음극은 동일한 물질로 형성된 것을 특징으로 하는 유기 발광 소자.
- 제7항에 있어서, 상기 n-형 유기물층은 약 4 내지 7 eV의 LUMO 에너지 준위 및 약 10-8cm2/Vs 내지 1 cm2/Vs의 전자이동도를 갖는 것을 특징으로 하는 유기 발광 소자.
- 제7항에 있어서, 상기 n-형 유기물층은 2,3,5,6-테트라플루오로-7,7,8,8-테트라시아노퀴노디메탄(F4TCNQ), 불소-치환된 3,4,9,10-페릴렌테트라카르복실릭 디안하이드라이드(PTCDA), 시아노-치환된 PTCDA, 나프탈렌테트라카르복실릭 디안하이드라이드(NTCDA), 불소-치환된 NTCDA, 시아노-치환된 NTCDA 또는 헥사니트릴 헥사아자트리페닐렌(HAT)를 포함하는 것을 특징으로 하는 유기 발광 소자.
- 청구항 7의 상기 양극, 상기 p-형 유기물층 및 상기 음극을 각각 갖는 복수개의 반복단위를 포함하고,하나의 반복단위의 상기 음극은 직렬로 연결된 이웃한 반복단위의 상기 양극에 연결된 것을 특징으로 하는 스택형 유기 발광 소자.
- 도전층 및 상기 도전층위에 위치하는 n-형 유기물층을 포함하는 양극(anode);음극(cathode); 및상기 양극의 도전층과 상기 음극의 사이에 위치하는 전자 도너층으로서, p- 형 유기물층을 포함하고 상기 양극의 상기 n-형 유기물층과 상기 p-형 유기물층의 사이에서 NP접합을 형성하는 전자도너층을 포함하고,상기 양극의 상기 n-형 유기물층의 LUMO 에너지 준위와 상기 양극의 상기 도전층의 페르미 에너지 준위의 에너지 차이가 약 2eV 이하이고; 및상기 양극의 상기 n-형 유기물층의 상기 LUMO 에너지 준위와 상기 p-형 유기물층의 HOMO 에너지 준위의 에너지 차이가 약 1eV 이하인 것을 특징으로 하는 유기 태양 전지.
- 제20항에 있어서, 상기 음극과 상기 전자 도너층의 사이에 위치하는 전자 억셉터층을 더 포함하는 것을 특징으로 하는 유기 태양 전지.
- 제20항에 있어서, 상기 양극의 도전층과 상기 음극은 동일한 물질로 형성된 것을 특징으로 하는 유기 태양 전지.
- 제20항에 있어서, 상기 양극의 상기 n-형 유기물층은 2,3,5,6-테트라플루오로-7,7,8,8-테트라시아노퀴노디메탄(F4TCNQ), 불소-치환된 3,4,9,10-페릴렌테트라카르복실릭 디안하이드라이드(PTCDA), 시아노-치환된 PTCDA, 나프탈렌테트라카르복실릭 디안하이드라이드(NTCDA), 불소-치환된 NTCDA, 시아노-치환된 NTCDA 또는 헥사니트릴 헥사아자트리페닐렌(HAT)을 포함하는 것을 특징으로 하는 유기 태양 전지.
- 소스 전극;드레인 전극게이트 전극; 및상기 게이트 전극위에 위치하는 절연층;상기 절연층위에 위치하는 p-형 유기물층; 및상기 소스 전극 또는 상기 드레인 전극과 상기 p-형 유기물층의 사이에 위치하는 n-형 유기물층으로서, 상기 n-형 유기물층과 상기 p-형 유기물층의 사이에서 NP접합을 형성하는 n-형 유기물층을 포함하고,상기 n-형 유기물층의 LUMO 에너지 준위와 상기 소스 전극 또는 상기 드레인 전극의 페르미 에너지 준위의 에너지 차이가 약 2eV 이하이고; 및상기 n-형 유기물층의 상기 LUMO 에너지 준위와 상기 p-형 유기물층의 HOMO 에너지 준위의 에너지 차이가 약 1eV 이하인 것을 특징으로 하는 유기 트랜지스터.
- 제20항에 있어서, 상기 n-형 유기물층은 2,3,5,6-테트라플루오로-7,7,8,8-테트라시아노퀴노디메탄(F4TCNQ), 불소-치환된 3,4,9,10-페릴렌테트라카르복실릭 디안하이드라이드(PTCDA), 시아노-치환된 PTCDA, 나프탈렌테트라카르복실릭 디안하이드라이드(NTCDA), 불소-치환된 NTCDA, 시아노-치환된 NTCDA 또는 헥사니트릴 헥사아자트리페닐렌(HAT)을 포함하는 것을 특징으로 하는 유기 트랜지스터.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20040033045 | 2004-05-11 | ||
KR1020040033045 | 2004-05-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060047778A true KR20060047778A (ko) | 2006-05-18 |
KR100690348B1 KR100690348B1 (ko) | 2007-03-09 |
Family
ID=35309786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050039489A KR100690348B1 (ko) | 2004-05-11 | 2005-05-11 | 유기 전기 소자 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7365360B2 (ko) |
EP (1) | EP1745519B1 (ko) |
JP (2) | JP5064034B2 (ko) |
KR (1) | KR100690348B1 (ko) |
CN (1) | CN100508238C (ko) |
TW (1) | TWI265753B (ko) |
WO (1) | WO2005109542A1 (ko) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100377321B1 (ko) | 1999-12-31 | 2003-03-26 | 주식회사 엘지화학 | 피-형 반도체 성질을 갖는 유기 화합물을 포함하는 전기소자 |
US7560175B2 (en) | 1999-12-31 | 2009-07-14 | Lg Chem, Ltd. | Electroluminescent devices with low work function anode |
KR100721656B1 (ko) | 2005-11-01 | 2007-05-23 | 주식회사 엘지화학 | 유기 전기 소자 |
US20060289882A1 (en) * | 2004-07-30 | 2006-12-28 | Kazuki Nishimura | Organic electroluminescent element and organic electroluminescent display device |
DE112005002603A5 (de) | 2004-08-13 | 2007-08-09 | Novaled Gmbh | Schichtanordnung für ein Lichtemittierendes Bauelement |
EP1794255B1 (en) | 2004-08-19 | 2016-11-16 | LG Chem, Ltd. | Organic light-emitting device comprising buffer layer and method for fabricating the same |
GB2418062A (en) | 2004-09-03 | 2006-03-15 | Seiko Epson Corp | An organic Field-Effect Transistor with a charge transfer injection layer |
EP1803172B1 (en) | 2004-09-24 | 2017-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP5409854B2 (ja) * | 2004-09-24 | 2014-02-05 | 株式会社半導体エネルギー研究所 | 発光装置 |
DE502005002342D1 (de) | 2005-03-15 | 2008-02-07 | Novaled Ag | Lichtemittierendes Bauelement |
EP2264806B1 (de) | 2005-04-13 | 2019-03-27 | Novaled GmbH | Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen |
JP4785509B2 (ja) * | 2005-11-30 | 2011-10-05 | 三洋電機株式会社 | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
US20070092755A1 (en) * | 2005-10-26 | 2007-04-26 | Eastman Kodak Company | Organic element for low voltage electroluminescent devices |
JP2007123611A (ja) * | 2005-10-28 | 2007-05-17 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
US20070108894A1 (en) * | 2005-11-17 | 2007-05-17 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device |
EP1806795B1 (de) | 2005-12-21 | 2008-07-09 | Novaled AG | Organisches Bauelement |
DE602006001930D1 (de) | 2005-12-23 | 2008-09-04 | Novaled Ag | tur von organischen Schichten |
EP1808909A1 (de) * | 2006-01-11 | 2007-07-18 | Novaled AG | Elekrolumineszente Lichtemissionseinrichtung |
WO2007083918A1 (en) * | 2006-01-18 | 2007-07-26 | Lg Chem. Ltd. | Oled having stacked organic light-emitting units |
CN101401487B (zh) * | 2006-03-07 | 2013-04-24 | Lg化学株式会社 | 有机发光器件及其制备方法 |
CN101400757B (zh) * | 2006-03-14 | 2013-05-15 | Lg化学株式会社 | 具有高效率的有机发光二极管及制备该二极管的方法 |
EP1848049B1 (de) | 2006-04-19 | 2009-12-09 | Novaled AG | Lichtemittierendes Bauelement |
EP2020694A4 (en) | 2006-04-20 | 2009-05-20 | Idemitsu Kosan Co | ORGANIC LIGHTING ELEMENT |
KR101084100B1 (ko) | 2006-06-01 | 2011-11-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광소자 |
US8987589B2 (en) | 2006-07-14 | 2015-03-24 | The Regents Of The University Of Michigan | Architectures and criteria for the design of high efficiency organic photovoltaic cells |
KR101426717B1 (ko) | 2006-12-04 | 2014-08-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치 및 전자 기기 |
US9397308B2 (en) | 2006-12-04 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
JP5249781B2 (ja) * | 2006-12-15 | 2013-07-31 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子用材料及び有機エレクトロルミネッセンス素子 |
JP2010514174A (ja) * | 2006-12-22 | 2010-04-30 | ノヴァレッド・アクチエンゲゼルシャフト | 少なくとも1つの有機層配列を有する電子素子 |
DE102007019260B4 (de) | 2007-04-17 | 2020-01-16 | Novaled Gmbh | Nichtflüchtiges organisches Speicherelement |
US20080278072A1 (en) * | 2007-04-30 | 2008-11-13 | Lg Chem, Ltd. | Organic light emitting device and method of producing the same |
US8044390B2 (en) * | 2007-05-25 | 2011-10-25 | Idemitsu Kosan Co., Ltd. | Material for organic electroluminescent device, organic electroluminescent device, and organic electroluminescent display |
KR20090002787A (ko) * | 2007-07-04 | 2009-01-09 | 삼성전자주식회사 | 트랜지스터 구조를 이용한 발광소자 및 수광소자 |
KR20100031127A (ko) * | 2007-07-11 | 2010-03-19 | 이데미쓰 고산 가부시키가이샤 | 유기 전계 발광 소자용 재료 및 유기 전계 발광 소자 |
JP2009021104A (ja) * | 2007-07-12 | 2009-01-29 | Sumitomo Chemical Co Ltd | 有機発光素子の製造方法 |
EP2045848B1 (en) * | 2007-07-18 | 2017-09-27 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device material and organic electroluminescent device |
JP5328122B2 (ja) * | 2007-08-20 | 2013-10-30 | ローム株式会社 | 有機薄膜トランジスタ |
US8040047B2 (en) * | 2007-10-19 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP5329429B2 (ja) * | 2007-11-30 | 2013-10-30 | 出光興産株式会社 | アザインデノフルオレンジオン誘導体、有機エレクトロルミネッセンス素子用材料及び有機エレクトロルミネッセンス素子 |
EP2224510A1 (en) * | 2007-12-21 | 2010-09-01 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device |
US20090208776A1 (en) * | 2008-02-19 | 2009-08-20 | General Electric Company | Organic optoelectronic device and method for manufacturing the same |
TWI472074B (zh) | 2008-03-17 | 2015-02-01 | Nippon Steel & Sumikin Chem Co | Organic electroluminescent elements |
CN101978784B (zh) * | 2008-03-18 | 2012-12-05 | 株式会社半导体能源研究所 | 发光元件、发光装置及电子装置 |
WO2009116547A1 (en) * | 2008-03-18 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device and electronic device |
TWI478624B (zh) * | 2008-03-27 | 2015-03-21 | Nippon Steel & Sumikin Chem Co | Organic electroluminescent elements |
EP2299786B1 (en) * | 2008-05-16 | 2014-03-26 | LG Chem, Ltd. | Stacked organic light-emitting diode |
JP5551344B2 (ja) * | 2008-05-23 | 2014-07-16 | ローム株式会社 | 有機el素子 |
US8372526B2 (en) | 2008-07-16 | 2013-02-12 | Universal Display Corporation | Intermediate connector for stacked organic light emitting devices |
DE102008036062B4 (de) | 2008-08-04 | 2015-11-12 | Novaled Ag | Organischer Feldeffekt-Transistor |
DE102008036063B4 (de) * | 2008-08-04 | 2017-08-31 | Novaled Gmbh | Organischer Feldeffekt-Transistor |
JP5785090B2 (ja) | 2008-11-19 | 2015-09-24 | ノヴァレッド・アクチエンゲゼルシャフト | キノキサリン化合物及び半導体材料 |
DE102008058230B4 (de) | 2008-11-19 | 2021-01-07 | Novaled Gmbh | Chinoxalinverbindung, organische Leuchtdiode, organischer Dünnfilmtransistor und Solarzelle |
EP2194055B1 (en) | 2008-12-03 | 2012-04-04 | Novaled AG | Bridged pyridoquinazoline or phenanthroline compounds and organic semiconducting material comprising that compound |
EP2371812B1 (en) | 2008-12-03 | 2015-12-02 | Idemitsu Kosan Co., Ltd. | Indenofluorenedione derivative, material for organic electroluminescent element, and organic electroluminescent element |
DE102008061843B4 (de) | 2008-12-15 | 2018-01-18 | Novaled Gmbh | Heterocyclische Verbindungen und deren Verwendung in elektronischen und optoelektronischen Bauelementen |
EP2200407B1 (en) * | 2008-12-17 | 2017-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting element, light emitting device, and electronic device |
TWI528862B (zh) * | 2009-01-21 | 2016-04-01 | 半導體能源研究所股份有限公司 | 發光元件,發光裝置以及電子裝置 |
JP2012521087A (ja) * | 2009-03-17 | 2012-09-10 | エルジー・ケム・リミテッド | 有機発光素子およびその製造方法 |
JP2010244868A (ja) * | 2009-04-07 | 2010-10-28 | Sony Corp | 有機電界発光素子および表示装置 |
EP2246862A1 (en) | 2009-04-27 | 2010-11-03 | Novaled AG | Organic electronic device comprising an organic semiconducting material |
TWI380490B (en) * | 2009-05-05 | 2012-12-21 | Univ Nat Chiao Tung | Organic photosensitive photoelectric device |
WO2011063927A1 (en) | 2009-11-24 | 2011-06-03 | Novaled Ag | Organic electronic device comprising an organic semiconducting material |
KR101036213B1 (ko) * | 2010-01-26 | 2011-05-20 | 광주과학기술원 | 발광소자와 태양전지 성능을 포함하는 전자소자 |
KR101135541B1 (ko) | 2010-04-01 | 2012-04-13 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 |
JP5922654B2 (ja) * | 2011-06-07 | 2016-05-24 | エイソンテクノロジー株式会社 | 有機エレクトロルミネッセント素子 |
ITMI20120284A1 (it) * | 2012-02-27 | 2013-08-28 | E T C Srl | Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita |
TW201341347A (zh) | 2012-03-15 | 2013-10-16 | Novaled Ag | 芳香胺三聯苯化合物及其在有機半導體元件中的應用 |
KR102051338B1 (ko) * | 2012-04-05 | 2019-12-03 | 노발레드 게엠베하 | 유기 전계 효과 트랜지스터 및 이를 제조하기 위한 방법 |
JP5999258B2 (ja) * | 2012-05-09 | 2016-09-28 | エルジー・ケム・リミテッド | 有機電気化学装置およびその製造方法{organicelectrochemicaldevice,andmethodformanufacturingsame} |
US9269919B2 (en) | 2012-05-31 | 2016-02-23 | Lg Chem, Ltd. | Stacked organic light emitting diode |
EP2752903B1 (en) * | 2012-05-31 | 2020-07-01 | LG Display Co., Ltd. | Organic electroluminescent device |
WO2014056565A1 (de) | 2012-10-09 | 2014-04-17 | Merck Patent Gmbh | Elektronische vorrichtung |
CN103022360B (zh) * | 2012-11-20 | 2016-03-02 | 溧阳市生产力促进中心 | 一种高开路电压的光伏电池的制造方法 |
CN103022361B (zh) * | 2012-11-20 | 2015-05-13 | 溧阳市生产力促进中心 | 一种光伏电池的制造方法 |
EP2933851B1 (en) | 2012-12-17 | 2017-05-10 | Nippon Steel & Sumikin Chemical Co., Ltd. | Organic electroluminescent device |
JP6092679B2 (ja) * | 2013-03-26 | 2017-03-08 | 中山 健一 | トランジスタ素子 |
ES2791779T3 (es) * | 2013-04-12 | 2020-11-05 | Univ Michigan Regents | Dispositivos fotosensibles orgánicos con filtros portadores de carga de bloqueo de excitón |
US10276817B2 (en) | 2013-04-12 | 2019-04-30 | University Of Southern California | Stable organic photosensitive devices with exciton-blocking charge carrier filters utilizing high glass transition temperature materials |
KR101563048B1 (ko) * | 2013-05-10 | 2015-10-30 | 주식회사 엘지화학 | 광활성층, 이를 포함하는 유기 태양 전지 및 이의 제조 방법 |
JP6210511B2 (ja) * | 2013-12-12 | 2017-10-11 | 王子ホールディングス株式会社 | 有機薄膜太陽電池、有機薄膜太陽電池用の基板、有機薄膜太陽電池の製造方法および有機薄膜太陽電池用の基板の製造方法 |
JP6331939B2 (ja) * | 2014-10-03 | 2018-05-30 | 東洋インキScホールディングス株式会社 | カラーフィルタ用着色組成物及びカラーフィルタ |
JP6331940B2 (ja) * | 2014-10-03 | 2018-05-30 | 東洋インキScホールディングス株式会社 | カラーフィルタ用着色組成物及びカラーフィルタ |
DE102020135145A1 (de) | 2020-12-30 | 2022-06-30 | Heliatek Gmbh | Solarzellenmodul und photovoltaische Vorrichtung |
CN113013344B (zh) * | 2021-02-24 | 2023-09-29 | 京东方科技集团股份有限公司 | 有机电致发光器件及其制备方法 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05114487A (ja) * | 1991-08-23 | 1993-05-07 | Fuji Electric Co Ltd | 有機薄膜発光素子 |
EP0553950A3 (en) * | 1992-01-07 | 1994-11-23 | Toshiba Kk | Organic electroluminescent device |
JP2885198B2 (ja) * | 1996-09-18 | 1999-04-19 | 日本電気株式会社 | p型電極構造およびそれを有する半導体発光素子 |
JP4085438B2 (ja) * | 1996-10-17 | 2008-05-14 | 松下電器産業株式会社 | 有機薄膜トランジスタ及び液晶素子と有機発光素子 |
US5998803A (en) * | 1997-05-29 | 1999-12-07 | The Trustees Of Princeton University | Organic light emitting device containing a hole injection enhancement layer |
TW382819B (en) | 1997-10-01 | 2000-02-21 | Ibm | Nanoscale mott-transition molecular field effect transistor |
US6420031B1 (en) * | 1997-11-03 | 2002-07-16 | The Trustees Of Princeton University | Highly transparent non-metallic cathodes |
US6316098B1 (en) * | 1998-03-27 | 2001-11-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
US6352777B1 (en) * | 1998-08-19 | 2002-03-05 | The Trustees Of Princeton University | Organic photosensitive optoelectronic devices with transparent electrodes |
JP4198253B2 (ja) | 1999-02-02 | 2008-12-17 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
KR100298899B1 (ko) | 1999-04-08 | 2001-09-22 | 이형도 | 유기발광소자 및 그 제조방법 |
JP2000306676A (ja) | 1999-04-21 | 2000-11-02 | Chemiprokasei Kaisha Ltd | 有機エレクトロルミネッセンス素子 |
US6720572B1 (en) * | 1999-06-25 | 2004-04-13 | The Penn State Research Foundation | Organic light emitters with improved carrier injection |
US6541908B1 (en) * | 1999-09-30 | 2003-04-01 | Rockwell Science Center, Llc | Electronic light emissive displays incorporating transparent and conductive zinc oxide thin film |
JP3571977B2 (ja) * | 1999-11-12 | 2004-09-29 | キヤノン株式会社 | 有機発光素子 |
JP2001176667A (ja) | 1999-12-21 | 2001-06-29 | Toyota Motor Corp | 有機el素子 |
KR20010060821A (ko) | 1999-12-28 | 2001-07-07 | 박종섭 | 유기전계발광표시소자의 구조 |
US7560175B2 (en) | 1999-12-31 | 2009-07-14 | Lg Chem, Ltd. | Electroluminescent devices with low work function anode |
US6953947B2 (en) * | 1999-12-31 | 2005-10-11 | Lg Chem, Ltd. | Organic thin film transistor |
KR100377321B1 (ko) | 1999-12-31 | 2003-03-26 | 주식회사 엘지화학 | 피-형 반도체 성질을 갖는 유기 화합물을 포함하는 전기소자 |
AT410729B (de) * | 2000-04-27 | 2003-07-25 | Qsel Quantum Solar Energy Linz | Photovoltaische zelle mit einer photoaktiven schicht aus zwei molekularen organischen komponenten |
JP2002208486A (ja) * | 2001-01-09 | 2002-07-26 | Canon Inc | 有機電子デバイス |
JP3972588B2 (ja) | 2001-02-26 | 2007-09-05 | 淳二 城戸 | 有機電界発光素子 |
DE10116876B4 (de) * | 2001-04-04 | 2004-09-23 | Infineon Technologies Ag | Verfahren zur Dotierung elektrisch leitfähiger organischer Verbindungen, organischer Feldeffekttransistor sowie Verfahren zu dessen Herstellung |
US6998487B2 (en) | 2001-04-27 | 2006-02-14 | Lg Chem, Ltd. | Double-spiro organic compounds and organic electroluminescent devices using the same |
JP2002322173A (ja) * | 2001-04-27 | 2002-11-08 | Nippon Hoso Kyokai <Nhk> | 有機化合物、半導体装置、有機el素子並びに表示装置 |
US6580027B2 (en) * | 2001-06-11 | 2003-06-17 | Trustees Of Princeton University | Solar cells using fullerenes |
DE10153656A1 (de) * | 2001-10-31 | 2003-05-22 | Infineon Technologies Ag | Verfahren zur Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren durch Aufbringen einer reaktiven, die organische Halbleiterschicht im Kontaktbereich regio-selektiv dotierenden Zwischenschicht |
US7141817B2 (en) * | 2001-11-30 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2003179238A (ja) * | 2001-12-10 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池の製造方法 |
US6815723B2 (en) * | 2001-12-28 | 2004-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor |
KR100691543B1 (ko) | 2002-01-18 | 2007-03-09 | 주식회사 엘지화학 | 새로운 전자 수송용 물질 및 이를 이용한 유기 발광 소자 |
US6872472B2 (en) * | 2002-02-15 | 2005-03-29 | Eastman Kodak Company | Providing an organic electroluminescent device having stacked electroluminescent units |
DE10207859A1 (de) * | 2002-02-20 | 2003-09-04 | Univ Dresden Tech | Dotiertes organisches Halbleitermaterial sowie Verfahren zu dessen Herstellung |
JP3933591B2 (ja) * | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP2004006287A (ja) | 2002-04-12 | 2004-01-08 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子 |
US7485733B2 (en) * | 2002-05-07 | 2009-02-03 | Lg Chem, Ltd. | Organic compounds for electroluminescence and organic electroluminescent devices using the same |
DE10224021B4 (de) * | 2002-05-24 | 2006-06-01 | Novaled Gmbh | Phosphoreszentes lichtemittierendes Bauelement mit organischen Schichten |
EP1383179A2 (en) * | 2002-07-17 | 2004-01-21 | Pioneer Corporation | Organic semiconductor device |
GB0229653D0 (en) * | 2002-12-20 | 2003-01-22 | Cambridge Display Tech Ltd | Electrical connection of optoelectronic devices |
US6995445B2 (en) * | 2003-03-14 | 2006-02-07 | The Trustees Of Princeton University | Thin film organic position sensitive detectors |
DE10326546A1 (de) | 2003-06-12 | 2005-01-05 | Siemens Ag | Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften |
JP2005100741A (ja) | 2003-09-24 | 2005-04-14 | Canon Inc | 発光素子、及びこれを用いた画像表示装置、光源、感光体露光光源 |
JP4243237B2 (ja) * | 2003-11-10 | 2009-03-25 | 淳二 城戸 | 有機素子、有機el素子、有機太陽電池、及び、有機fet構造、並びに、有機素子の製造方法 |
DE10357044A1 (de) | 2003-12-04 | 2005-07-14 | Novaled Gmbh | Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten |
JP2007533073A (ja) | 2004-04-09 | 2007-11-15 | エルジー・ケム・リミテッド | 高効率及び高輝度を有する積層型有機発光素子 |
-
2005
- 2005-05-11 TW TW094115168A patent/TWI265753B/zh active
- 2005-05-11 JP JP2006542511A patent/JP5064034B2/ja active Active
- 2005-05-11 US US11/126,769 patent/US7365360B2/en active Active
- 2005-05-11 KR KR1020050039489A patent/KR100690348B1/ko active IP Right Grant
- 2005-05-11 EP EP05740877.5A patent/EP1745519B1/en active Active
- 2005-05-11 WO PCT/KR2005/001381 patent/WO2005109542A1/en not_active Application Discontinuation
- 2005-05-11 CN CNB2005800015434A patent/CN100508238C/zh active Active
-
2008
- 2008-04-28 US US12/149,179 patent/US7821001B2/en active Active
-
2012
- 2012-01-24 JP JP2012012234A patent/JP2012134159A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US7365360B2 (en) | 2008-04-29 |
WO2005109542A1 (en) | 2005-11-17 |
US20080272369A1 (en) | 2008-11-06 |
CN1906777A (zh) | 2007-01-31 |
CN100508238C (zh) | 2009-07-01 |
EP1745519A4 (en) | 2011-08-24 |
TW200601891A (en) | 2006-01-01 |
TWI265753B (en) | 2006-11-01 |
KR100690348B1 (ko) | 2007-03-09 |
US7821001B2 (en) | 2010-10-26 |
US20050255334A1 (en) | 2005-11-17 |
EP1745519B1 (en) | 2018-07-25 |
JP2007518220A (ja) | 2007-07-05 |
JP2012134159A (ja) | 2012-07-12 |
EP1745519A1 (en) | 2007-01-24 |
JP5064034B2 (ja) | 2012-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100690348B1 (ko) | 유기 전기 소자 | |
KR101003267B1 (ko) | 유기발광소자 및 이의 제조 방법 | |
KR100721656B1 (ko) | 유기 전기 소자 | |
KR100775734B1 (ko) | 유기발광소자 및 이의 제조 방법 | |
KR101065912B1 (ko) | 적층형 유기발광소자 | |
TWI574949B (zh) | 包含多層電洞傳輸層之有機發光裝置以及包含其之有機發光顯示設備 | |
KR101927941B1 (ko) | 다층 구조의 정공수송층을 포함하는 유기 발광 소자 및 이를 포함하는 평판 표시 장치 | |
US9166184B2 (en) | Organic light emitting device having three successive light emitting sub-layers with mixture matrix material for the second light emitting sub-layer and method of preparing same and display device thereof | |
KR101688317B1 (ko) | 저전압 구동 유기발광소자 및 이의 제조 방법 | |
KR101973287B1 (ko) | 복합체를 포함하는 정공 수송층을 구비하는 유기 발광 소자 | |
WO2013174104A1 (zh) | 有机电致发光器件及其制备方法 | |
KR100759548B1 (ko) | 유기 전계 발광 소자 | |
EP3435437A1 (en) | Organic light-emitting element | |
CN114050221A (zh) | 一种基于多元界面激基复合物的有机电致发光器件 | |
CN104183713A (zh) | 顶发射有机电致发光器件及其制备方法 | |
CN104183719A (zh) | 倒置有机电致发光器件及其制备方法 | |
CN114613927A (zh) | 一种电荷产生层、电致发光器件及其制备方法 | |
Mathai et al. | High-efficiency solution processed electrophosphorescent organic light emitting diodes based on a simple bi-layer device architecture | |
Cai | A paper published in Advanced Materials Min Cai, Teng Xiao, Emily Hellerich, Ying Chen, Ruth Shinar and Joseph Shinar |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130111 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140103 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150119 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160216 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170116 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20190114 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20200116 Year of fee payment: 14 |