KR20050013597A - 진공 처리 시스템용 전달 챔버 - Google Patents
진공 처리 시스템용 전달 챔버Info
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- KR20050013597A KR20050013597A KR10-2004-7020838A KR20047020838A KR20050013597A KR 20050013597 A KR20050013597 A KR 20050013597A KR 20047020838 A KR20047020838 A KR 20047020838A KR 20050013597 A KR20050013597 A KR 20050013597A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
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- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (29)
- 전달 챔버로서,적어도 하나의 처리 챔버 및 적어도 하나의 로드 록 챔버에 결합하고 적어도 하나의 처리 챔버 및 적어도 하나의 로드 록 챔버 사이에서 기판을 전달하기 위하여 제공된 적어도 일부의 로보트를 하우징하기 위하여 제공된 측벽들을 가진 메인 몸체;전달 챔버의 메인 몸체의 상부 부분에 결합하여 밀봉하도록 제공된 뚜껑; 및전달 챔버의 메인 몸체의 바닥 부분에 결합하여 밀봉하도록 제공된 돔 모양 바닥을 포함하는 전달 챔버.
- 제 1 항에 있어서, 상기 메인 몸체는 적어도 하나의 로드 록 챔버 및 처리 챔버에 결합하도록 각각 제공된 다수의 편평한 영역들을 가진 원통형 내부 벽 및 외부 벽을 포함하는 것을 특징으로 하는 전달 챔버.
- 제 2 항에 있어서, 상기 메인 몸체는 단일 재료 부분으로 가공되는 것을 특징으로 하는 전달 챔버.
- 제 3 항에 있어서, 상기 메인 몸체는 알루미늄을 포함하는 것을 특징으로 하는 전달 챔버.
- 제 4 항에 있어서, 상기 메인 몸체의 측벽들은 약 2 인치의 최대 두께를 가지는 것을 특징으로 하는 전달 챔버.
- 제 1 항에 있어서, 상기 뚜껑은 실질적으로 편평한 것을 특징으로 하는 전달 챔버.
- 제 1 항에 있어서, 상기 뚜껑운 돔 모양인 것을 특징으로 하는 전달 챔버.
- 제 1 항에 있어서, 상기 돔 모양 바닥은 단일 재료 부분으로 가공되는 것을 특징으로 하는 전달 챔버.
- 제 8 항에 있어서, 상기 돔 모양 바닥은 스테인레스 스틸을 포함하는 것을 특징으로 하는 전달 챔버.
- 제 9 항에 있어서, 상기 돔 모양 바닥은 약 0.625 인치의 최소 두께를 가지는 것을 특징으로 하는 전달 챔버.
- 제 1 항에 있어서, 상기 돔 모양 바닥은 뚜껑 및 상기 돔 모양 바닥의 중앙 부분 사이의 수직 거리가 뚜껑 및 돔 모양 바닥의 외부 에지 사이의 수직 거리보다더 크도록 오목 구조를 가지는 것을 특징으로 하는 전달 챔버.
- 진공 처리 시스템으로서,적어도 하나의 처리 챔버 및 적어도 하나의 로드록 챔버에 결합하고 적어도 하나의 처리 챔버 및 적어도 하나의 로드 록 챔버 사이에서 기판을 전달하기 위하여 제공된 로보트의 적어도 일부를 하우징하기 위하여 제공된 측벽들을 가진 메인 몸체,전달 챔버의 메인 몸체의 상부에 결합하여 밀봉하기 위하여 제공된 뚜껑, 및전달 챔버의 메인 몸체의 바닥 부분에 결합하여 밀봉하기 위하여 제공된 돔 모양 바닥을 포함하는 전달 챔버;상기 전달 챔버의 메인 몸체에 결합된 적어도 하나의 처리 챔버;상기 전달 챔버의 메인 몸체에 결합된 적어도 하나의 로드 록 챔버; 및돔 모양 바닥을 통하여 전달 챔버로 적어도 부분적으로 연장하는 로보트를 포함하고,상기 로보트는 전달 챔버를 통하여 적어도 하나의 처리 챔버 및 적어도 하나의 로드 록 챔버 사이에서 기판을 전달하기 위하여 제공되는 진공 처리 시스템.
- 제 12 항에 있어서, 상기 메인 몸체는 적어도 하나의 로드 록 챔버 및 처리 챔버에 각각 결합하기 위하여 제공된 다수의 편평한 영역들을 가진 원통형 내부 벽및 외부 벽을 포함하는 것을 특징으로 하는 진공 처리 시스템.
- 제 13 항에 있어서, 상기 전달 챔버의 메인 몸체는 단일 재료부로 가공되는 것을 특징으로 하는 진공 처리 시스템.
- 제 14 항에 있어서, 상기 전달 챔버의 메인 몸체는 알루미늄을 포함하는 것을 특징으로 하는 진공 처리 시스템.
- 제 15 항에 있어서, 상기 전달 챔버의 메인 몸체의 측벽들은 약 2 인치의 최소 두께를 가지는 것을 특징으로 하는 진공 처리 시스템.
- 제 12 항에 있어서, 상기 전달 챔버의 뚜껑은 실질적으로 편평한 것을 특징으로 하는 진공 처리 시스템.
- 제 12 항에 있어서, 상기 전달 챔버의 뚜껑은 돔 모양인 것을 특징으로 하는 진공 처리 시스템.
- 제 12 항에 있어서, 상기 전달 챔버의 돔 모양 바닥은 단일 재료부로 가공되는 것을 특징으로 하는 진공 처리 시스템.
- 제 19 항에 있어서, 상기 전달 챔버의 돔 모양 바닥은 스테인레스 스틸을 포함하는 것을 특징으로 하는 진공 처리 시스템.
- 제 20 항에 있어서, 상기 전달 챔버의 돔 모양 바닥은 약 0.625 인치의 최소 두께를 가지는 것을 특징으로 하는 진공 처리 시스템.
- 제 12 항에 있어서, 상기 전달 챔버의 돔 모양 바닥은 오목 구조를 가져서, 전달 챔버의 뚜껑 및 돔 모양 바닥의 중앙 부분 사이의 수직 거리는 상기 뚜껑 및 돔 모양 바닥의 외부 에지 사이의 수직 거리보다 큰 것을 특징으로 하는 진공 처리 시스템.
- 적어도 하나의 처리 챔버에 적어도 하나의 로드 록 챔버를 결합하기 위하여 제공된 전달 챔버에 대한 돔 모양 바닥을 형성하기 위한 방법으로서,재료를 선택하는 단계; 및상기 재료로부터 돔 모양 바닥을 형성하는 단계를 포함하고, 상기 돔 모양 바닥은 저달 챔버의 메인 몸체의 바닥 부분과 밀봉을 형성하도록 구성되고 상기 바닥 부분에 일치하는 크기의 외부 직경과, 상기 전달 챔버에 결합된 적어도 하나의 로드 록 챔버 및 적어도 하나의 처리 챔버 사이에서 기판들을 전달하기 위하여 제공된 로보트의 적어도 일부를 수용하는 크기의 직경을 가진 구멍을 가지는 돔 모양 바닥 형성 방법.
- 제 23 항에 있어서, 상기 재료는 스테인레스 스틸인 것을 특징으로 하는 돔 모양 바닥 형성 방법.
- 전달 챔버로서,적어도 하나의 처리 챔버 및 적어도 하나의 로드 록 챔버에 결합하고 적어도 하나의 처리 챔버 및 적어도 하나의 로드 록 챔버 사이에서 기판을 전달하기 위하여 제공된 로보트의 적어도 일부를 하우징하기 위해 제공된 측벽들을 가진 메인 몸체;상기 전달 챔버의 메인 몸체의 상부 일부에 결합하여 밀봉하기 위하여 제공된 뚜껑; 및상기 전달 챔버의 메인 몸체의 바닥 부분에 결합하고 밀봉하기 위하여 제공된 돔 모양 바닥을 포함하고,상기 돔 모양 바닥은,전달 챔버내에 배치된 로보트 아암의 적어도 일부를 수용하도록 제공된 높이를 가진 원통형 영역; 및돔 모양 영역을 포함하고, 상기 돔 모양 영역은,제 1 곡률 반경을 가진 제 1 반경 부분, 및제 1 반경 부분 및 원통형 영역 사이에서 연장하고 제 1 곡률 반경 미만의 제 2 곡률 반경을 가진 제 2 반경 부분을 가지는 것을 특징으로 하는돔 모양 바닥 형성 방법.
- 제 25 항에 있어서, 상기 제 1 곡률 반경은 메인 몸체의 반경보다 큰 것을 특징으로 하는 돔 모양 바닥 형성 방법.
- 제 26 항에 있어서, 상기 제 1 곡률 반경은 메인 몸체 직경의 약 1.5 배인 것을 특징으로 하는 돔 모양 바닥 형성 방법.
- 제 25 항에 있어서, 상기 제 2 곡률 반경은 돔 모양 영역 두께의 약 5-20 배인 것을 특징으로 하는 돔 모양 바닥 형성 방법.
- 적어도 하나의 처리 챔버에 적어도 하나의 로드 록 챔버를 결합하기 위하여 제공된 전달 챔버에 대한 돔 모양 바닥을 형성하는 방법으로서,재료를 선택하는 단계; 및상기 재료로 돔 모양 바닥을 형성하는 단계를 포함하고, 상기 돔 모양 바닥은,상기 전달 챔버내에 배치된 로보트 아암의 적어도 일부를 수용하기 위하여 제공된 높이를 가진 원통형 영역; 및돔 모양 영역을 가지며, 상기 돔 모양 영역은,제 1 곡률 반경을 가진 제 1 반경 부분; 및제 1 반경 부분 및 원통형 영역 사이로 연장하고 상기 제 1 곡률 반경 미만의 제 2 곡률 반경을 가진 제 2 반경 부분을 가지는 돔 모양 바닥 형성 방법.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39062902P | 2002-06-21 | 2002-06-21 | |
US60/390,629 | 2002-06-21 | ||
US39257802P | 2002-06-28 | 2002-06-28 | |
US60/392,578 | 2002-06-28 | ||
PCT/US2003/019413 WO2004001817A1 (en) | 2002-06-21 | 2003-06-20 | Transfer chamber for vacuum processing system |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050013597A true KR20050013597A (ko) | 2005-02-04 |
KR100682209B1 KR100682209B1 (ko) | 2007-02-12 |
Family
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-
2003
- 2003-06-20 AU AU2003245592A patent/AU2003245592A1/en not_active Abandoned
- 2003-06-20 TW TW092116901A patent/TWI294155B/zh not_active IP Right Cessation
- 2003-06-20 US US10/601,185 patent/US7018517B2/en not_active Expired - Lifetime
- 2003-06-20 EP EP03739220A patent/EP1523761A1/en not_active Withdrawn
- 2003-06-20 WO PCT/US2003/019413 patent/WO2004001817A1/en active Application Filing
- 2003-06-20 JP JP2004515976A patent/JP4619116B2/ja not_active Expired - Fee Related
- 2003-06-20 CN CNB038195593A patent/CN100423179C/zh not_active Expired - Fee Related
- 2003-06-20 KR KR1020047020838A patent/KR100682209B1/ko active IP Right Grant
-
2006
- 2006-03-21 US US11/386,257 patent/US8033772B2/en not_active Expired - Fee Related
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2010
- 2010-09-02 JP JP2010196861A patent/JP5204821B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2011018923A (ja) | 2011-01-27 |
WO2004001817A1 (en) | 2003-12-31 |
CN1675742A (zh) | 2005-09-28 |
KR100682209B1 (ko) | 2007-02-12 |
JP4619116B2 (ja) | 2011-01-26 |
JP5204821B2 (ja) | 2013-06-05 |
WO2004001817A9 (en) | 2004-07-01 |
CN100423179C (zh) | 2008-10-01 |
JP2005531149A (ja) | 2005-10-13 |
EP1523761A1 (en) | 2005-04-20 |
US20040055537A1 (en) | 2004-03-25 |
US7018517B2 (en) | 2006-03-28 |
US8033772B2 (en) | 2011-10-11 |
US20060157340A1 (en) | 2006-07-20 |
TW200403794A (en) | 2004-03-01 |
AU2003245592A1 (en) | 2004-01-06 |
TWI294155B (en) | 2008-03-01 |
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