KR20020001073A - Ald 박막증착장치 및 증착방법 - Google Patents
Ald 박막증착장치 및 증착방법 Download PDFInfo
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Abstract
Description
Claims (27)
- 웨이퍼가 내장되어 증착되는 반응용기(100)와;제1반응가스를 상기 반응용기(100)로 공급하기 위한 제1반응가스공급부(210)와;제2반응가스를 상기 반응용기(100)로 공급하기 위한 제2반응가스공급부(230)와;상기 제1반응가스공급부(210)와 상기 반응용기(100)를 연결하는 제1반응가스공급라인(220)과;상기 제2반응가스공급부(230)와 상기 반응용기(100)를 연결하는 제2반응가스공급라인(240)과;불활성가스공급원(250)으로부터 공급되는 불활성가스를 상기 제1반응가스공급라인(220)으로 공급하는 제1불활성가스공급라인(260)과;불활성가스공급원(250)으로부터 공급되는 불활성가스를 상기 제2반응가스공급라인(240)으로 공급하는 제2불활성가스공급라인(270)과;상기 반응용기(100)의 가스를 외부로 배출하는 배기라인(400);을 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제1항에 있어서,상기 제1반응가스공급부(210)는, 제1반응원료를 가스화하는 버블러(211)와, 흐르는 제1반응가스의 흐름량을 제어하는 제1반응가스흐름량제어기(212)와, 상기 버블러(211)와 상기 제1반응가스흐름량제어기(212) 사이에 설치되어 제1반응가스의 흐름을 개폐하는 제1밸브(V1)를 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제2항에 있어서,상기 제1반응가스공급라인(220)에 설치되어, 상기 제1반응가스흐름량제어기(212)에 제어된 제1반응가스의 흐름을 개폐시키는제3밸브(V3)를 더 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제1항에 있어서,상기 제2반응가스공급부(230)는, 제2반응가스의 흐름을 개폐시키는 제4밸브(V4)와, 상기 제4밸브(V4)를 통과한 제2반응가스의 흐름량을 제어하는 제2반응가스흐름량제어기(232)를 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제4항에 있어서,상기 제2반응가스공급라인(240)에 설치되어, 상기 제2반응가스흐름량제어기(232)에 제어된 제2반응가스의 흐름을 개폐시키는 제5밸브(V5)를 더 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제1항에 있어서,상기 제1불활성가스공급라인(260)에는, 공급되는 불활성가스의 흐름을 개폐시키는 제6밸브(V6)와, 상기 제6밸브(V6)를 통과한 불활성가스의 흐름량을 제어하는 제1불활성가스흐름량제어기(262)와, 제1불활성가스흐름량제어기(262)에 제어된 불활성가스의 흐름을 개폐시키는 제7밸브(V7)가 설치된 것을 특징으로 하는 ALD 박막증착장치.
- 제1항에 있어서,상기 제2불활성가스공급라인(270)에는, 공급되는 불활성가스의 흐름을 개폐시키는 제8밸브(V8)와, 상기 제8밸브(V8)를 통과한 불활성가스의 흐름량을 제어하는 제2불활성가스흐름량제어기(272)와, 상기 제2불활성가스흐름량제어기(272)에 제어된 불활성가스의 흐름을 개폐시키는 제9밸브(V9)가 설치된 것을 특징으로 하는 ALD 박막증착장치.
- 제1항에 있어서,상기 제1반응가스 및/또는 불활성가스를 상기 반응용기(100)를 거치지 않고 곧바로 상기 배기라인(400)으로 흐르게 하기 위한 것으로서, 제1반응가스의 흐름을 개폐시키는 제10밸브(V10)와 불활성가스의 흐름을 개폐시키는 제11밸브(V11)를 가지는 제1바이패스라인(280)과;상기 제2반응가스 및/또는 불활성가스를 상기 반응용기(100)를 거치지 않고 곧바로 상기 배기라인(400)으로 흐르게 하기 위한 것으로서, 제2반응가스의 흐름을 개폐시키는 제12밸브(V12)와 불활성가스의 흐름을 개폐시키는 제13밸브(V13)를 가지는 제2바이패스라인(290)을 더 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제1항에 있어서,라인에 잔존하는 가스 및/또는 오염원을 배기하기 위한 것으로서, 상기 제1반응가스공급부(210), 제2반응가스공급부(230), 제1불활성가스공급라인(260), 제2불활성가스공급라인(270), 제1바이패스라인(280), 제2바이패스라인(290),배기라인(400)과 유기적으로 연결된 별도의 불활성가스공급라인(320)을 더 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제1항에 있어서,상기 제1반응가스는 TiCl4또는 Ta 원소를 포함하는 화합물가스이고, 제2반응가스는 NH3인 것을 특징으로 하는 ALD 박막증착장치.
- 제1항에 있어서,상기 제1반응가스공급부(510)는, 제1반응가스의 흐름을 개폐시키는 제31밸브(V31)와, 상기 제31밸브(V31)를 통과한 제1반응가스의 흐름량을 제어하는 제1반응가스흐름량제어기(512)를 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제11항에 있어서,상기 제1반응가스는 WF6이고, 제2반응가스는 NH3인 것을 특징으로 하는 ALD 박막증착장치.
- 제1항에 있어서,제3반응가스를 상기 제2반응가스공급라인(240)으로 공급하는 제3반응가스공급부(620)와;제4반응가스를 제2반응가스공급라인(240)으로 공급하는 것으로서, 제4반응가스의 흐름을 개폐시키는 제32밸브(V32)와, 상기 제32밸브(V32)를 통과한 제4반응가스의 흐름량을 제어하는 제4반응가스흐름량제어기(612)와, 상기 제4반응가스흐름량제어기(612)에 제어된 제4반응가스의 흐름을 개폐시키는 제33밸브(V33)를 가지는 제4반응가스공급부(610);를 더 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제13항에 있어서,상기 제3반응가스공급부(620)는, 제3반응원료를 가스화하는 버블러(621)와, 흐르는 제3반응가스의 흐름량을 제어하는 제3반응가스흐름량제어기(622)와, 상기 버블러(621)와 상기 제3반응가스흐름량제어기(622) 사이에 설치되어 제2반응가스의 흐름을 개폐하는 제34밸브(V34)와, 상기 제2반응가스공급라인(240)으로 상기 제2반응가스흐름량제어기(622)에 제어된 제1반응가스의 흐름을 개폐시키는 제35밸브(V35)를 더 포함하는 것을 특징으로 하는 ALD 박막증착장치.
- 제14항에 있어서,상기 제1반응가스는 Ti, Ta 전이금속 원소를 포함하는 화합물 가스이고, 제2반응가스는 NH3인 것을 특징으로 하는 ALD 박막증착장치.
- 제14항에 있어서,상기 제3반응가스는 TMA(TriMethylAluminum) 이고, 제4반응가스는 H2인 것을 특징으로 하는 ALD 박막증착장치.
- 웨이퍼가 내장되어 증착되는 반응용기(100)와, 제1반응가스를 상기 반응용기(100)로 공급하기 위한 제1반응가스공급부(210)와, 상기 제1반응가스공급부(210)와 상기 반응용기(100)를 연결하는 제1반응가스공급라인(220)과, 제2반응가스를 상기 반응용기(100)로 공급하기 위한 제2반응가스공급부(230)와, 상기 제2반응가스공급부(230)와 상기 반응용기(100)를 연결하는 제2반응가스공급라인(240)과, 유량제어된 불활성가스를 상기 제1반응가스공급라인(220)으로 공급하는 제1불활성가스공급라인(260)과, 유량제어된 불활성가스를 상기 제2반응가스공급라인(240)으로 공급하는 제2불활성가스공급라인(270)과, 반응용기(100)의 가스를 외부로 배출하는 배기라인(400);를 포함하는 박막증착장치에 적용하는 것으로서,유량제어된 제1반응가스와 유량제어된 불활성가스를 혼합하여 상기 반응용기(100) 내의 웨이퍼 상부 표면으로 공급하고, 유량제어된 제2반응가스와 유량제어된 불활성가스를 혼합하여 상기 반응용기(100) 내의 웨이퍼(w)의 외주측으로 공급하는 것을 특징으로 하는 ALD 박막증착방법.
- 제17항에 있어서,상기 제1반응가스로 Cl 원소를 포함한 화합물가스를 사용하고 상기 제2반응가스를 NH3로 사용할 경우에, 박막증착공정시 파티클의 생성을 방지하기 위한 것으로서, 초기 제1반응가스를 상기 반응용기(100)로 유입시키기 수초전에 상기 NH3가스를 반응용기(100) 내부로 유입시키는 파티클생성방지단계를 포함하는 것을 특징으로 하는 ALD 박막증착방법.
- 제17항에 있어서,상기 반응용기(100)로 상기 제1반응가스와 불활성가스를 혼합하여 유입시키다 상기 제1반응가스를 소정시간동안 배제시키는 제1단계 동작과, 상기 반응용기(100)로 상기 제2반응가스와 불활성가스를 유입시키다 상기 제2반응가스를 소정시간 배제시키는 제2단계 동작을 번갈아 반복적으로 수행하는 것을 특징으로 하는 ALD 박막증착방법.
- 제19항에 있어서,상기 제1반응가스로 Ti, Ta, W 전이금속 원소를 포함하는 화합물 가스를 사용하고 제2반응가스로 NH3가스를 사용할 경우에,박막증착공정시, 상기 웨이퍼(w)의 온도를 400℃ ∼ 600 ℃ 범위로 유지시키고, 상기 반응용기(100)로 연결되는 라인의 온도를 40℃ ∼ 200 ℃ 범위에서 유지시키는 것을 특징으로 하는 ALD 박막증착방법.
- 제20항에 있어서,유량제어되는 제1반응가스의 흐름량은 1SCCM 이상, 상기 제1반응가스와 혼합되는 불활성가스의 유량제어된 흐름량은 50 SCCM 이상, 유량제어되는 NH3의 흐름량은 50SCCM 이상, 상기 NH3가스와 혼합되는 불활성가스의 유량제어된 흐름량은 60SCCM 이상인 것을 특징으로 하는 ALD 박막증착방법.
- 제17항에 있어서,상기 제1반응가스로 Cl 원소를 포함한 화합물가스를 사용할 경우 증착되는 웨이퍼(w) 상의 박막에서 Cl 을 제거하기 위하여,반응용기(100)로 불활성가스와 NH3가스만을 유입시키는 Cl 제거단계를 더 포함하는 것을 특징으로 하는 ALD 박막증착방법
- 제21항에 있어서,상기 제1,2반응가스 및/또는 불활성가스가 반응용기(100) 내부로 유입될 때, 상기 반응용기(100) 내의 압력이 1torr ∼ 10 torr 범위에 있는 것을 특징으로 하는 ALD 박막증착방법.
- 제19항에 있어서,상기 제1반응가스로 TiCl4를 사용하고 제2반응가스로 NH3가스를 사용할 경우,상기 TiCl4가스의 배재 이후에 상기 NH3가스를 유입시키기 까지는 적어도 1초 이상의 시간간격을 두는 것을 특징으로 하는 ALD 박막증착방법.
- 제24항에 있어서,상기 TiCl4가스와 불활성가스를 반응용기(100) 내부로 유입시키는 시간과, 그 다음 반응용기(100)로의 NH3가스 유입전까지 상기 TiCl4가스를 배재하는 시간의 비는 1 : 1.2 이상으로 하는 것을 특징으로 하는 ALD 박막증착방법.
- 제25항에 있어서,상기 제1불활성가스공급라인(260)을 통하여 유입되는 불활성가스의 유량값과, 상기 제2불활성가스공급라인(270)을 통하여 유입되는 불활성가스의 유량값의 비를 1 : 1.2 이상으로 하여, 확산성이 강한 TiCl4가스가 상기 제2반응가스공급라인(240)을 경유하여 역류하지 못하도록 하는 것을 특징으로 하는 ALD 박막증착방법.
- 제17항에 있어서,상기 제1반응가스공급부(210)가 제1반응원료를 가스화하는 버블러(211)와, 흐르는 제1반응가스의 흐름량을 제어하는 제1반응가스흐름량제어기(212)와, 상기버블러(211)와 상기 제1반응가스흐름량제어기(212) 사이에 설치되어 제1반응가스의 흐름을 개폐하는 제1,2밸브(V1,V2)를 포함하고,상기 제1반응가스공급라인(220)이 상기 제1반응가스흐름량제어기(212)에 제어된 제1반응가스의 흐름을 개폐시키는 제3밸브(V3)를 포함할 경우에,상기 제1,2밸브(V1,V2)를 열어서 상기 제1반응가스를 상기 제1반응가스흐름량제어기(212)를 경유시켜 제3밸브(V3)까지 소정시간동안 채운후, 제3밸브(V3)를 열어 제1반응가스를 반응용기(100)로 보낼 때 상기 제2밸브(V2)를 닫는 것을 특징으로 하는 ALD 박막증착방법.
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KR100399067B1 (ko) * | 2000-12-30 | 2003-09-26 | 주식회사 하이닉스반도체 | 원자층 증착 장치 |
KR100496903B1 (ko) * | 2002-10-12 | 2005-06-28 | 주식회사 아이피에스 | Ald 박막증착장치 및 그를 이용한 박막증착방법 |
KR100496906B1 (ko) * | 2002-10-21 | 2005-06-28 | 주식회사 아이피에스 | Ald 박막증착장치 |
KR100632037B1 (ko) * | 2004-09-09 | 2006-10-04 | 동부일렉트로닉스 주식회사 | 화학기상증착장비의 가스분배방법 |
KR101039382B1 (ko) * | 2010-07-02 | 2011-06-08 | (주)대성에너지오 | 흡입수단을 구비한 스캐너 |
Also Published As
Publication number | Publication date |
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US6573184B2 (en) | 2003-06-03 |
EP1167569B1 (en) | 2007-07-18 |
DE60129380D1 (de) | 2007-08-30 |
TW531796B (en) | 2003-05-11 |
KR100332313B1 (ko) | 2002-04-12 |
DE60129380T2 (de) | 2008-04-10 |
ATE367458T1 (de) | 2007-08-15 |
US6579372B2 (en) | 2003-06-17 |
JP2002069651A (ja) | 2002-03-08 |
US20020052097A1 (en) | 2002-05-02 |
EP1167569A1 (en) | 2002-01-02 |
JP3631984B2 (ja) | 2005-03-23 |
SG90250A1 (en) | 2002-07-23 |
US20020094689A1 (en) | 2002-07-18 |
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