KR20010085636A - 반도체 제조 방법 및 반도체 제조 장치 - Google Patents
반도체 제조 방법 및 반도체 제조 장치 Download PDFInfo
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- KR20010085636A KR20010085636A KR1020010009843A KR20010009843A KR20010085636A KR 20010085636 A KR20010085636 A KR 20010085636A KR 1020010009843 A KR1020010009843 A KR 1020010009843A KR 20010009843 A KR20010009843 A KR 20010009843A KR 20010085636 A KR20010085636 A KR 20010085636A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 162
- 230000008569 process Effects 0.000 claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 238000006243 chemical reaction Methods 0.000 claims abstract description 86
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 64
- 238000012546 transfer Methods 0.000 claims description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- 238000010438 heat treatment Methods 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 15
- 238000010926 purge Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 210000005056 cell body Anatomy 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000000862 absorption spectrum Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 239000013307 optical fiber Substances 0.000 claims 2
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 16
- 239000007789 gas Substances 0.000 description 138
- 238000005070 sampling Methods 0.000 description 29
- 238000011109 contamination Methods 0.000 description 16
- 210000004027 cell Anatomy 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 13
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 13
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 13
- 239000010408 film Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004445 quantitative analysis Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 description 1
- -1 H 2 Chemical compound 0.000 description 1
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
- Y10S438/908—Utilizing cluster apparatus
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- Power Engineering (AREA)
Abstract
Description
Claims (15)
- 기판(W)이 내부에 설치된 반응실(1) 내에 반응성 가스를 흘려보내어 기판(W)과 반응성 가스를 반응시키는 반응성 가스 처리를 행하는 반도체 제조 방법으로서,상기 기판(W)을 설치한 상태에서 상기 반응실(1) 내 또는 상기 반응실(1)의 가스 배기계 내의 수분 농도를 계측하고, 상기 수분 농도에 기초하여 반응성 가스 처리의 조건을 조정하는 것을 특징으로 하는 반도체 제조 방법.
- 제1항에 있어서, 상기 반응성 가스 처리의 조건은 상기 반응실(1) 내에 반응성 가스를 유입시키기 전에 행하는 상기 기판(W)의 가열 조건을 포함하는 것을 특징으로 하는 반도체 제조 방법.
- 제2항에 있어서, 상기 가열 조건은 상기 기판(W)의 가열 온도, 기판(W)의 가열 시간 또는 퍼지 가스의 유량 중 적어도 하나인 것을 특징으로 하는 반도체 제조 방법.
- 제1항에 있어서, 상기 반응성 가스 처리의 조건은 상기 기판(W)의 가열 온도, 상기 반응성 가스의 유량, 상기 반응성 가스의 혼합비 또는 상기 반응실(1) 내의 압력 중 적어도 하나인 것을 특징으로 하는 반도체 제조 방법.
- 제1항에 있어서, 표면의 적어도 일부에 산화실리콘(31)이 형성되어 있는 상기 기판(W)에 대하여 상기 반응성 가스 처리를 행하는 것을 특징으로 하는 반도체 제조 방법.
- 제5항에 있어서, 상기 기판(W)은 실리콘 기판이고,상기 반응성 가스 처리는 상기 기판(W)의 표면 중 실리콘이 노출된 영역에 선택적으로 반도체층을 성장시키는 처리인 것을 특징으로 하는 반도체 제조 방법.
- 기판(W)을 기판 반송계(2, 3)에 의해 상기 기판 반송계 내의 밀폐 공간으로부터 반응실(1) 내로 반입했을 때 또는 반응실(1) 내로부터 상기 밀폐 공간으로 반출했을 때, 상기 반응실(1) 내에 반응성 가스를 흘려보내어 반응실(1) 내에서 반응성 가스를 반응시키는 반응성 가스 처리를 행하는 반도체 제조 방법으로서,상기 밀폐 공간에 접속된 제1 수분계(6)에 의해 상기 밀폐 공간 내의 수분 농도를 계측한 후에, 상기 기판(W)을 상기 기판 반송계(2, 3)로 상기 반입 또는 상기 반출을 행하는 기판 반송 공정과,상기 기판 반송 공정 후에, 상기 반응실(1)에 접속된 제2 수분계(5)로 반응실(1) 내의 수분 농도를 계측하면서 상기 반응성 가스 처리를 행하는 가스 처리 공정을 구비하고 있는 것을 특징으로 하는 반도체 제조 방법.
- 제7항에 있어서, 상기 기판 반송 공정은 상기 밀폐 공간 내의 수분 농도가제1 기정치보다 낮은 것을 확인한 후에 상기 기판(W)을 상기 밀폐 공간으로부터 상기 반응실(1) 내로 반입 또는 반응실(1) 내로부터 상기 밀폐 공간으로 반출하고,상기 가스 처리 공정은 상기 반응실(1) 내의 수분 농도가 제2 기정치보다 낮은 것을 확인한 후에 상기 반응성 가스 처리를 개시하는 것을 특징으로 하는 반도체 제조 방법.
- 제8항에 있어서, 적어도 상기 제2 기정치를 1 ppm 미만으로 하는 것을 특징으로 하는 반도체 제조 방법.
- 제7항에 있어서, 상기 제1 수분계(6) 또는 상기 제2 수분계(5)의 적어도 한 쪽은 상기 밀폐 공간 또는 상기 반응실(1)에 접속된 관형 셀 본체(19) 내에 레이저광을 입사시켜 투과한 레이저광의 흡수 스펙트럼을 측정하는 레이저 수분계(10)인 것을 특징으로 하는 반도체 제조 방법.
- 기판(W)을 기판 반송계(2, 3)에 의해 상기 기판 반송계 내의 밀폐 공간으로부터 반응실(1) 내로 반입했을 때 또는 반응실(1) 내로부터 상기 밀폐 공간으로 반출했을 때, 상기 반응실(1) 내에 반응성 가스를 흘려보내어 반응실(1) 내에서 반응성 가스를 반응시키는 반응성 가스 처리를 행하는 반도체 제조 장치로서,상기 기판 반송계의 밀폐 공간 내의 수분 농도를 계측하는 제1 수분계(6)와,상기 반응실(1) 내의 수분 농도를 계측하는 제2 수분계(5)를 구비하고 있는것을 특징으로 하는 반도체 제조 장치.
- 제11항에 있어서, 복수의 반응실(1)을 구비하고,상기 제1 수분계(6)는 상기 반응실(1)마다 수분 농도를 계측 가능하게 설치되어 있는 것을 특징으로 하는 반도체 제조 장치.
- 제12항에 있어서, 상기 제1 수분계(6)에 접속하는 대상을 임의의 상기 반응실(1)로 절환 가능한 절환 기구(9d)를 구비하고 있는 것을 특징으로 하는 반도체 제조 장치.
- 제11항에 있어서, 상기 제1 수분계(6) 및 상기 제2 수분계(5)는 동일한 수분계이고,상기 수분계에 접속되는 대상을 상기 밀폐 공간 또는 상기 반응실(1)로 절환 가능한 절환 기구(9d)를 구비하고 있는 것을 특징으로 하는 반도체 제조 장치.
- 제11항에 있어서, 상기 제1 수분계(6) 또는 상기 제2 수분계(5)의 적어도 한 쪽은 상기 밀폐 공간 또는 상기 반응실(1)에 접속된 관형 셀 본체(19) 내에 레이저광을 입사시켜 투과한 레이저광의 흡수 스펙트럼을 측정하는 레이저 수분계(10)인 것을 특징으로 하는 반도체 제조 장치.
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JPH11183366A (ja) | 1997-12-25 | 1999-07-09 | Nippon Sanso Kk | 分光分析用測定セル |
JPH11354516A (ja) * | 1998-06-08 | 1999-12-24 | Sony Corp | シリコン酸化膜形成装置及びシリコン酸化膜形成方法 |
JP2000097890A (ja) * | 1998-09-21 | 2000-04-07 | Sony Corp | ガス中の水分量測定装置およびクライオポンプ再生終了時の検知方法 |
JP4319723B2 (ja) | 1999-01-25 | 2009-08-26 | 株式会社アルバック | エピタキシャル成長方法 |
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2001
- 2001-02-12 TW TW090103004A patent/TW476996B/zh not_active IP Right Cessation
- 2001-02-27 KR KR1020010009843A patent/KR100773636B1/ko active IP Right Grant
- 2001-02-27 US US09/793,124 patent/US6776805B2/en not_active Expired - Lifetime
- 2001-02-28 DE DE10109507A patent/DE10109507B4/de not_active Expired - Fee Related
- 2001-02-28 CN CNB011162333A patent/CN1183578C/zh not_active Expired - Fee Related
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2002
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Also Published As
Publication number | Publication date |
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KR100773636B1 (ko) | 2007-11-05 |
DE10109507A1 (de) | 2001-09-13 |
US6794204B2 (en) | 2004-09-21 |
US20040092043A1 (en) | 2004-05-13 |
DE10109507B4 (de) | 2011-11-17 |
CN1312585A (zh) | 2001-09-12 |
US7033843B2 (en) | 2006-04-25 |
TW476996B (en) | 2002-02-21 |
US6776805B2 (en) | 2004-08-17 |
US20030022469A1 (en) | 2003-01-30 |
CN1183578C (zh) | 2005-01-05 |
US20010019900A1 (en) | 2001-09-06 |
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