KR20000005908A - 반도체디바이스 - Google Patents
반도체디바이스 Download PDFInfo
- Publication number
- KR20000005908A KR20000005908A KR1019990020594A KR19990020594A KR20000005908A KR 20000005908 A KR20000005908 A KR 20000005908A KR 1019990020594 A KR1019990020594 A KR 1019990020594A KR 19990020594 A KR19990020594 A KR 19990020594A KR 20000005908 A KR20000005908 A KR 20000005908A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- buffer layer
- buffer
- indium
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000872 buffer Substances 0.000 title claims abstract description 173
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 70
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 42
- 238000000407 epitaxy Methods 0.000 title abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- -1 nitride compound Chemical class 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 29
- 229910002601 GaN Inorganic materials 0.000 claims description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 abstract description 27
- 230000006911 nucleation Effects 0.000 abstract description 23
- 238000010899 nucleation Methods 0.000 abstract description 23
- 238000005336 cracking Methods 0.000 abstract description 16
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 275
- 239000000463 material Substances 0.000 description 36
- 238000004519 manufacturing process Methods 0.000 description 32
- 239000010408 film Substances 0.000 description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 125000004429 atom Chemical group 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 230000008859 change Effects 0.000 description 10
- 239000012528 membrane Substances 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000000543 intermediate Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
Landscapes
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9272898A | 1998-06-05 | 1998-06-05 | |
| US09/092,728 | 1998-06-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000005908A true KR20000005908A (ko) | 2000-01-25 |
Family
ID=22234815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990020594A Withdrawn KR20000005908A (ko) | 1998-06-05 | 1999-06-04 | 반도체디바이스 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2000036620A (enExample) |
| KR (1) | KR20000005908A (enExample) |
| DE (1) | DE19905517B4 (enExample) |
| GB (1) | GB2338107A (enExample) |
| TW (1) | TW398084B (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100508141B1 (ko) * | 2001-02-27 | 2005-08-11 | 니뽄 가이시 가부시키가이샤 | 질화물막의 제조방법 |
| KR100821220B1 (ko) * | 2006-06-29 | 2008-04-10 | 서울옵토디바이스주식회사 | 다층의 버퍼층을 가지는 질화물 반도체 발광 소자 및 그제조방법 |
| US7875910B2 (en) | 2003-03-03 | 2011-01-25 | Cree, Inc. | Integrated nitride and silicon carbide-based devices |
| US7898047B2 (en) | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
| KR101117484B1 (ko) * | 2009-12-31 | 2012-02-29 | 우리엘에스티 주식회사 | 반도체 발광소자 |
| KR101421410B1 (ko) * | 2006-12-22 | 2014-07-22 | 코닌클리케 필립스 엔.브이. | 변형률을 감소시키는 템플릿 상에 성장된 ⅲ-질화물 발광 장치 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9826517D0 (en) * | 1998-12-02 | 1999-01-27 | Arima Optoelectronics Corp | Semiconductor devices |
| JP3636976B2 (ja) * | 2000-03-17 | 2005-04-06 | 日本電気株式会社 | 窒化物半導体素子およびその製造方法 |
| US6495894B2 (en) * | 2000-05-22 | 2002-12-17 | Ngk Insulators, Ltd. | Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate |
| US6635904B2 (en) * | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
| US6489636B1 (en) | 2001-03-29 | 2002-12-03 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
| JP4088111B2 (ja) * | 2002-06-28 | 2008-05-21 | 日立電線株式会社 | 多孔質基板とその製造方法、ＧａＮ系半導体積層基板とその製造方法 |
| DE10245631B4 (de) | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
| JP5159040B2 (ja) | 2005-03-31 | 2013-03-06 | 株式会社光波 | 低温成長バッファ層の形成方法および発光素子の製造方法 |
| US7534638B2 (en) | 2006-12-22 | 2009-05-19 | Philips Lumiled Lighting Co., Llc | III-nitride light emitting devices grown on templates to reduce strain |
| US7547908B2 (en) | 2006-12-22 | 2009-06-16 | Philips Lumilieds Lighting Co, Llc | III-nitride light emitting devices grown on templates to reduce strain |
| TWI398016B (zh) * | 2007-02-07 | 2013-06-01 | Advanced Optoelectronic Tech | 具三族氮化合物半導體緩衝層之光電半導體元件及其製造方法 |
| JP2009026956A (ja) * | 2007-07-19 | 2009-02-05 | Sumitomo Electric Ind Ltd | 発光素子、発光素子のための基板生産物、および発光素子を作製する方法 |
| DE102008019268A1 (de) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| US8183577B2 (en) | 2009-06-30 | 2012-05-22 | Koninklijke Philips Electronics N.V. | Controlling pit formation in a III-nitride device |
| JP5731785B2 (ja) * | 2010-09-30 | 2015-06-10 | スタンレー電気株式会社 | 積層半導体および積層半導体の製造方法 |
| CN103700743A (zh) * | 2012-09-28 | 2014-04-02 | 江苏汉莱科技有限公司 | 一种发光二极管及其缓冲层的制备方法 |
| DE102012109460B4 (de) | 2012-10-04 | 2024-03-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display |
| US9159788B2 (en) | 2013-12-31 | 2015-10-13 | Industrial Technology Research Institute | Nitride semiconductor structure |
| CN105428482B (zh) * | 2015-12-30 | 2018-09-11 | 厦门市三安光电科技有限公司 | 一种led外延结构及制作方法 |
| DE102016120335A1 (de) * | 2016-10-25 | 2018-04-26 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge und Verfahren zur Herstellung einer Halbleiterschichtenfolge |
| DE102017101333B4 (de) | 2017-01-24 | 2023-07-27 | X-Fab Semiconductor Foundries Gmbh | Halbleiter und verfahren zur herstellung eines halbleiters |
| TWI671801B (zh) * | 2018-08-01 | 2019-09-11 | 環球晶圓股份有限公司 | 磊晶結構 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3352712B2 (ja) * | 1991-12-18 | 2002-12-03 | 浩 天野 | 窒化ガリウム系半導体素子及びその製造方法 |
| JPH06164055A (ja) * | 1992-11-25 | 1994-06-10 | Asahi Chem Ind Co Ltd | 量子井戸型半導体レーザ |
| US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
| US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
| JPH08116091A (ja) * | 1994-08-26 | 1996-05-07 | Rohm Co Ltd | 半導体発光素子およびその製法 |
| JPH0897469A (ja) * | 1994-09-29 | 1996-04-12 | Rohm Co Ltd | 半導体発光素子 |
| JPH08125223A (ja) * | 1994-10-25 | 1996-05-17 | Toyoda Gosei Co Ltd | ３族窒化物半導体発光素子及びその製造方法 |
| US5661074A (en) * | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
| JPH08264833A (ja) * | 1995-03-10 | 1996-10-11 | Hewlett Packard Co <Hp> | 発光ダイオード |
| JPH08288552A (ja) * | 1995-04-19 | 1996-11-01 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子及びその製造方法 |
| US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
| JP2839077B2 (ja) * | 1995-06-15 | 1998-12-16 | 日本電気株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| US5798537A (en) * | 1995-08-31 | 1998-08-25 | Kabushiki Kaisha Toshiba | Blue light-emitting device |
| US5789265A (en) * | 1995-08-31 | 1998-08-04 | Kabushiki Kaisha Toshiba | Method of manufacturing blue light-emitting device by using BCL3 and CL2 |
| JP3712770B2 (ja) * | 1996-01-19 | 2005-11-02 | 豊田合成株式会社 | ３族窒化物半導体の製造方法及び半導体素子 |
| JP3879173B2 (ja) * | 1996-03-25 | 2007-02-07 | 住友電気工業株式会社 | 化合物半導体気相成長方法 |
| US5729029A (en) * | 1996-09-06 | 1998-03-17 | Hewlett-Packard Company | Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices |
| JPH10107316A (ja) * | 1996-10-01 | 1998-04-24 | Toyoda Gosei Co Ltd | ３族窒化物半導体発光素子 |
| JPH10214999A (ja) * | 1997-01-30 | 1998-08-11 | Toyota Central Res & Dev Lab Inc | Ｉｉｉ−ｖ族窒化物半導体素子 |
| JPH10294531A (ja) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | 窒化物化合物半導体発光素子 |
| JP3653950B2 (ja) * | 1997-05-21 | 2005-06-02 | 松下電器産業株式会社 | 窒化ガリウム系化合物半導体発光素子および窒化ガリウム系化合物半導体薄膜の製造方法 |
| JP3991393B2 (ja) * | 1997-06-11 | 2007-10-17 | 住友電気工業株式会社 | 化合物半導体の製造装置 |
| JP3147821B2 (ja) * | 1997-06-13 | 2001-03-19 | 日本電気株式会社 | 窒化物系化合物半導体およびその結晶成長方法および窒化ガリウム系発光素子 |
| JPH11121800A (ja) * | 1997-10-09 | 1999-04-30 | Fuji Electric Co Ltd | Ｉｉｉ 族窒化物半導体素子およびその製造方法 |
| JP3500281B2 (ja) * | 1997-11-05 | 2004-02-23 | 株式会社東芝 | 窒化ガリウム系半導体素子およびその製造方法 |
| JP3080155B2 (ja) * | 1997-11-05 | 2000-08-21 | サンケン電気株式会社 | 窒化ガリウム半導体層を有する半導体装置及びその製造方法 |
| JPH11186602A (ja) * | 1997-12-24 | 1999-07-09 | Toshiba Corp | 発光素子および結晶成長方法 |
| JPH11219904A (ja) * | 1998-01-30 | 1999-08-10 | Stanley Electric Co Ltd | 化合物半導体基板、その製造方法および化合物半導体発光素子 |
-
1998
- 1998-12-31 TW TW087122019A patent/TW398084B/zh not_active IP Right Cessation
-
1999
- 1999-02-10 DE DE19905517A patent/DE19905517B4/de not_active Expired - Lifetime
- 1999-05-17 GB GB9911467A patent/GB2338107A/en not_active Withdrawn
- 1999-05-28 JP JP14925999A patent/JP2000036620A/ja active Pending
- 1999-06-04 KR KR1019990020594A patent/KR20000005908A/ko not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100508141B1 (ko) * | 2001-02-27 | 2005-08-11 | 니뽄 가이시 가부시키가이샤 | 질화물막의 제조방법 |
| US7875910B2 (en) | 2003-03-03 | 2011-01-25 | Cree, Inc. | Integrated nitride and silicon carbide-based devices |
| US7898047B2 (en) | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
| KR101065096B1 (ko) * | 2003-03-03 | 2011-09-16 | 크리 인코포레이티드 | 집적 질화물계 음파 소자 및 집적 질화물계 음파 소자의제조 방법 |
| US8035111B2 (en) | 2003-03-03 | 2011-10-11 | Cree, Inc. | Integrated nitride and silicon carbide-based devices |
| US8502235B2 (en) | 2003-03-03 | 2013-08-06 | Cree, Inc. | Integrated nitride and silicon carbide-based devices |
| KR100821220B1 (ko) * | 2006-06-29 | 2008-04-10 | 서울옵토디바이스주식회사 | 다층의 버퍼층을 가지는 질화물 반도체 발광 소자 및 그제조방법 |
| KR101421410B1 (ko) * | 2006-12-22 | 2014-07-22 | 코닌클리케 필립스 엔.브이. | 변형률을 감소시키는 템플릿 상에 성장된 ⅲ-질화물 발광 장치 |
| KR101117484B1 (ko) * | 2009-12-31 | 2012-02-29 | 우리엘에스티 주식회사 | 반도체 발광소자 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19905517A1 (de) | 1999-12-09 |
| TW398084B (en) | 2000-07-11 |
| GB2338107A (en) | 1999-12-08 |
| DE19905517B4 (de) | 2011-02-03 |
| JP2000036620A (ja) | 2000-02-02 |
| GB9911467D0 (en) | 1999-07-14 |
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