KR102556121B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR102556121B1
KR102556121B1 KR1020217040275A KR20217040275A KR102556121B1 KR 102556121 B1 KR102556121 B1 KR 102556121B1 KR 1020217040275 A KR1020217040275 A KR 1020217040275A KR 20217040275 A KR20217040275 A KR 20217040275A KR 102556121 B1 KR102556121 B1 KR 102556121B1
Authority
KR
South Korea
Prior art keywords
semiconductor chip
bonding material
die
semiconductor
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217040275A
Other languages
English (en)
Korean (ko)
Other versions
KR20220006598A (ko
Inventor
도모유키 아사다
에리 후쿠다
다이스케 츠나미
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20220006598A publication Critical patent/KR20220006598A/ko
Application granted granted Critical
Publication of KR102556121B1 publication Critical patent/KR102556121B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H01L24/83
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H01L2224/83385
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07351Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/331Shapes of die-attach connectors
    • H10W72/332Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/922Bond pads being integral with underlying chip-level interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/934Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020217040275A 2019-08-27 2019-08-27 반도체 장치 Active KR102556121B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/033462 WO2021038712A1 (ja) 2019-08-27 2019-08-27 半導体装置および半導体チップ

Publications (2)

Publication Number Publication Date
KR20220006598A KR20220006598A (ko) 2022-01-17
KR102556121B1 true KR102556121B1 (ko) 2023-07-14

Family

ID=74683908

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217040275A Active KR102556121B1 (ko) 2019-08-27 2019-08-27 반도체 장치

Country Status (7)

Country Link
US (1) US12113040B2 (https=)
JP (1) JP7173361B2 (https=)
KR (1) KR102556121B1 (https=)
CN (1) CN114270482B (https=)
DE (1) DE112019007675T5 (https=)
TW (1) TWI760771B (https=)
WO (1) WO2021038712A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353740A (ja) 2004-06-09 2005-12-22 Toshiba Corp 半導体素子及び半導体装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2587081B1 (fr) * 1985-09-11 1988-04-15 Bp Chimie Sa Dispositif doseur de type rotatif permettant de delivrer des substances granulaires
US4956694A (en) * 1988-11-04 1990-09-11 Dense-Pac Microsystems, Inc. Integrated circuit chip stacking
JPH0550731U (ja) * 1991-12-05 1993-07-02 オリジン電気株式会社 絶縁基板,それを用いた半導体装置および回路装置
JPH06260723A (ja) * 1993-03-03 1994-09-16 Mitsubishi Electric Corp 半導体レーザ装置
US5891761A (en) * 1994-06-23 1999-04-06 Cubic Memory, Inc. Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform
JP2853700B2 (ja) * 1997-03-12 1999-02-03 日本電気株式会社 半導体装置
JP2001345542A (ja) 2000-05-31 2001-12-14 Kyocera Corp 電子部品の実装構造
JP3890909B2 (ja) 2001-03-19 2007-03-07 カシオ計算機株式会社 電子部品およびその接合方法
SG111069A1 (en) * 2002-06-18 2005-05-30 Micron Technology Inc Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
SG107595A1 (en) * 2002-06-18 2004-12-29 Micron Technology Inc Semiconductor devices and semiconductor device components with peripherally located, castellated contacts, assembles and packages including such semiconductor devices or packages and associated methods
US6855572B2 (en) * 2002-08-28 2005-02-15 Micron Technology, Inc. Castellation wafer level packaging of integrated circuit chips
TWI442535B (zh) * 2008-05-23 2014-06-21 精材科技股份有限公司 電子元件封裝體及其製作方法
JP2010021251A (ja) 2008-07-09 2010-01-28 Panasonic Corp 半導体装置及びその製造方法
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
US8053898B2 (en) * 2009-10-05 2011-11-08 Samsung Electronics Co., Ltd. Connection for off-chip electrostatic discharge protection
KR101697573B1 (ko) * 2010-11-29 2017-01-19 삼성전자 주식회사 반도체 장치, 그 제조 방법, 및 상기 반도체 장치를 포함하는 반도체 패키지
US9768223B2 (en) * 2011-12-21 2017-09-19 Xintec Inc. Electronics device package and fabrication method thereof
US20140048824A1 (en) * 2012-08-15 2014-02-20 Epistar Corporation Light-emitting device
JP2014160736A (ja) * 2013-02-19 2014-09-04 Toshiba Corp 半導体発光装置及び発光装置
US9117804B2 (en) * 2013-09-13 2015-08-25 United Microelectronics Corporation Interposer structure and manufacturing method thereof
CN105934491B (zh) * 2014-01-29 2018-04-24 日立化成株式会社 粘接剂组合物、使用了粘接剂组合物的半导体装置的制造方法、以及固体摄像元件
JP6801648B2 (ja) * 2015-05-25 2020-12-16 コニカミノルタ株式会社 ポリイミドフィルム、ポリイミドフィルムの製造方法、フレキシブルプリント基板、フレキシブルディスプレイ用基板、フレキシブルディスプレイ用前面板、led照明装置及び有機エレクトロルミネッセンス表示装置
JP2017050489A (ja) * 2015-09-04 2017-03-09 株式会社東芝 半導体パッケージおよび半導体パッケージの製造方法
TWI696300B (zh) * 2016-03-15 2020-06-11 晶元光電股份有限公司 半導體裝置及其製造方法
WO2018117111A1 (ja) * 2016-12-21 2018-06-28 大日本印刷株式会社 貫通電極基板、半導体装置及び貫通電極基板の製造方法
TWI610413B (zh) * 2017-03-15 2018-01-01 南茂科技股份有限公司 半導體封裝結構、半導體晶圓及半導體晶片
JP2018046289A (ja) 2017-11-21 2018-03-22 エイブリック株式会社 半導体装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353740A (ja) 2004-06-09 2005-12-22 Toshiba Corp 半導体素子及び半導体装置

Also Published As

Publication number Publication date
US12113040B2 (en) 2024-10-08
US20220223558A1 (en) 2022-07-14
CN114270482B (zh) 2024-11-29
JP7173361B2 (ja) 2022-11-16
WO2021038712A1 (ja) 2021-03-04
KR20220006598A (ko) 2022-01-17
DE112019007675T5 (de) 2022-06-15
JPWO2021038712A1 (https=) 2021-03-04
CN114270482A (zh) 2022-04-01
TWI760771B (zh) 2022-04-11
TW202123389A (zh) 2021-06-16

Similar Documents

Publication Publication Date Title
US6958543B2 (en) Semiconductor equipment with lateral and vertical MOS regions
US20150214138A1 (en) Semiconductor device
KR20130083361A (ko) 기판 관통 전극을 갖는 반도체 장치
JP2004134762A (ja) 半導体装置
US20150270240A1 (en) Power semiconductor device
JP2002141463A (ja) 半導体モジュール
KR102638477B1 (ko) 반도체 패키지 및 그 제조 방법
US9991183B2 (en) Semiconductor component having inner and outer semiconductor component housings
JP2017038019A (ja) 半導体装置
US9601573B2 (en) Semiconductor device for reducing propagation time of gate input signals
JP2012064855A (ja) 半導体装置
KR102556121B1 (ko) 반도체 장치
JP7055534B2 (ja) 半導体装置の製造方法
JP4687066B2 (ja) パワーic
US9601572B2 (en) Semiconductor device for reducing gate wiring length
US20240038651A1 (en) Circuit board arrangement
JP7274954B2 (ja) 半導体装置
JP5540808B2 (ja) 半導体ウェハ
JP2008258578A (ja) 半導体装置
KR20170085055A (ko) 광전 반도체 소자 및 광전 반도체 소자를 포함하는 장치
JP2011108800A (ja) 横型igbt及び横型igbtの製造方法
WO2023136074A1 (ja) 半導体装置
JP3918748B2 (ja) 半導体装置
CN103972206A (zh) 半导体装置
JP2022188994A (ja) 半導体装置

Legal Events

Date Code Title Description
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000