WO2021038712A1 - 半導体装置および半導体チップ - Google Patents

半導体装置および半導体チップ Download PDF

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Publication number
WO2021038712A1
WO2021038712A1 PCT/JP2019/033462 JP2019033462W WO2021038712A1 WO 2021038712 A1 WO2021038712 A1 WO 2021038712A1 JP 2019033462 W JP2019033462 W JP 2019033462W WO 2021038712 A1 WO2021038712 A1 WO 2021038712A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor chip
back surface
semiconductor
die bond
bond material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/033462
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English (en)
French (fr)
Japanese (ja)
Inventor
智之 浅田
絵理 福田
大介 津波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2021541834A priority Critical patent/JP7173361B2/ja
Priority to PCT/JP2019/033462 priority patent/WO2021038712A1/ja
Priority to US17/607,359 priority patent/US12113040B2/en
Priority to KR1020217040275A priority patent/KR102556121B1/ko
Priority to CN201980099596.6A priority patent/CN114270482B/zh
Priority to DE112019007675.2T priority patent/DE112019007675T5/de
Priority to TW109120036A priority patent/TWI760771B/zh
Publication of WO2021038712A1 publication Critical patent/WO2021038712A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/332—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present invention relates to semiconductor devices and semiconductor chips.
  • Patent Document 1 discloses a semiconductor device including a semiconductor chip, a die pad that supports the semiconductor chip, and an adhesive that adheres the semiconductor chip to the die pad. By providing the uneven side surface at the lower part of the side surface of the semiconductor chip, the adhesive crawls up well at the time of die bonding, and even a small semiconductor chip can improve the adhesion to the die pad.
  • the die-bonding material for joining the semiconductor chip to the heat sink or the like is spread over the entire back surface of the chip.
  • the die bond material may crawl up to the top surface of the semiconductor chip. In this case, the die bond material may reach the electrodes formed on the upper surface of the semiconductor chip. This causes a problem that the electrode conducts with the heat sink via the die bond material.
  • the coating amount of the die bond material is reduced in order to suppress the creeping up of the die bond material, the die bond material is less likely to protrude from the semiconductor chip. As a result, it may not be possible to visually confirm whether or not the die-bonding material has spread over the entire back surface of the semiconductor chip.
  • the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor device and a semiconductor chip that make it easy to confirm the range in which the die bond material is spread.
  • the semiconductor device includes a support, a semiconductor chip provided on the support, and a die-bonding material for joining the back surface of the semiconductor chip and the support.
  • a plurality of notches are formed at the corners formed by the back surface of the semiconductor chip and the side surface connected to the back surface, and the die bond material is integrally provided over the plurality of notches.
  • the semiconductor device includes a support, a semiconductor chip provided on the support, and a die-bonding material for joining the back surface of the semiconductor chip and the support, and the semiconductor.
  • the chip has a transparent or translucent semiconductor substrate provided on the support, and a plurality of recesses are formed on the outer peripheral portion of the back surface of the semiconductor substrate facing the support, and the die bond material is formed. Is integrally provided over the plurality of recesses.
  • the semiconductor device includes a support, a semiconductor chip provided on the support, and a die bond material for joining the back surface of the semiconductor chip and the support.
  • the semiconductor chip has a semiconductor substrate provided on the support, and the semiconductor substrate penetrates the outer peripheral portion of the semiconductor substrate from the back surface facing the support to the upper surface facing the back surface.
  • a plurality of recesses are formed, the semiconductor chip has a plurality of conductors embedded in the plurality of recesses from the upper surface side of the semiconductor substrate, and the die bond material is integrally provided over the plurality of recesses. Be done.
  • the semiconductor chip according to the fourth invention of the present application comprises a semiconductor substrate, an electrode provided on the upper surface of the semiconductor substrate, and a back surface conductor provided on the back surface of the semiconductor substrate facing the upper surface.
  • a plurality of first notches are formed at the corners formed by the back surface of the semiconductor substrate and the side surface connected to the back surface, and each of the back surface conductors is connected to the plurality of first notches, and the semiconductor is provided.
  • a plurality of second notches are formed that penetrate from the first surface facing the substrate to the second surface facing the first surface.
  • the state of the die bond material can be confirmed from a plurality of notches formed in the semiconductor chip. Therefore, it is easy to confirm the range in which the die bond material is spread.
  • the die bond material that has penetrated into a plurality of recesses can be confirmed via a transparent or translucent semiconductor substrate. Therefore, it is easy to confirm the range in which the die bond material is spread.
  • the state of the die bond material can be confirmed by checking whether or not the plurality of conductors and the die bond material are conducting. Therefore, it is easy to confirm the range in which the die bond material is spread.
  • the state of the die bond material can be confirmed from the plurality of first notches and the plurality of second notches. Therefore, it is easy to confirm the range in which the die bond material is spread.
  • FIG. It is a perspective view of the semiconductor chip which concerns on Embodiment 1.
  • FIG. It is a top view of the semiconductor chip which concerns on Embodiment 1.
  • FIG. It is a left side view of the semiconductor chip which concerns on Embodiment 1.
  • FIG. It is a front view of the semiconductor chip which concerns on Embodiment 1.
  • FIG. It is a right side view of the semiconductor chip which concerns on Embodiment 1.
  • FIG. It is a bottom view of the semiconductor chip which concerns on Embodiment 1.
  • FIG. It is a figure explaining the manufacturing method of the semiconductor chip which concerns on Embodiment 1.
  • FIG. It is a perspective view of the semiconductor chip which concerns on a comparative example. It is a top view of the semiconductor chip which concerns on a comparative example.
  • FIG. 1 It is a left side view of the semiconductor chip which concerns on a comparative example. It is a front view of the semiconductor chip which concerns on a comparative example. It is a right side view of the semiconductor chip which concerns on a comparative example. It is a bottom view of the semiconductor chip which concerns on a comparative example. It is a top view of the semiconductor device which concerns on a comparative example. It is a front view of the semiconductor device which concerns on a comparative example. It is a top view of the semiconductor device which concerns on other comparative examples. It is a front view of the semiconductor device which concerns on other comparative examples. It is a front view of the semiconductor device which concerns on other comparative examples. It is a front view of the semiconductor device which concerns on other comparative examples. It is a front view of the semiconductor device which concerns on Embodiment 1. FIG. It is an enlarged view of the notch which concerns on Embodiment 1. FIG.
  • FIG. It is an enlarged view of the notch which concerns on Embodiment 1.
  • FIG. It is an enlarged view of the notch which concerns on Embodiment 1.
  • FIG. It is a top view of the semiconductor chip which concerns on Embodiment 2.
  • FIG. It is a left side view of the semiconductor chip which concerns on Embodiment 2.
  • FIG. It is a front view of the semiconductor chip which concerns on Embodiment 2.
  • FIG. It is a right side view of the semiconductor chip which concerns on Embodiment 2.
  • FIG. It is a bottom view of the semiconductor chip which concerns on Embodiment 2.
  • FIG. It is a top view of the semiconductor device which concerns on Embodiment 2.
  • FIG. It is an enlarged view of the notch which concerns on Embodiment 2.
  • FIG. It is a left side view of the semiconductor chip which concerns on Embodiment 2.
  • FIG. It is a front view of the semiconductor chip which concerns on Embodiment 2.
  • FIG. It is a right side view
  • FIG. It is an enlarged view of the notch which concerns on Embodiment 2.
  • FIG. It is an enlarged view of the notch which concerns on Embodiment 2.
  • FIG. It is a top view of the semiconductor chip which concerns on Embodiment 3.
  • FIG. It is a left side view of the semiconductor chip which concerns on Embodiment 3.
  • FIG. It is a front view of the semiconductor chip which concerns on Embodiment 3.
  • FIG. It is a right side view of the semiconductor chip which concerns on Embodiment 3.
  • FIG. It is a bottom view of the semiconductor chip which concerns on Embodiment 3.
  • FIG. It is a top view of the semiconductor device which concerns on Embodiment 3.
  • FIG. It is an enlarged view of the notch which concerns on Embodiment 3.
  • FIG. It is an enlarged view of the notch which concerns on Embodiment 3.
  • FIG. It is a top view of the semiconductor chip which concerns on Embodiment 4.
  • FIG. It is a left side view of the semiconductor chip which concerns on Embodiment 4.
  • FIG. It is a front view of the semiconductor chip which concerns on Embodiment 4.
  • FIG. It is a right side view of the semiconductor chip which concerns on Embodiment 4.
  • FIG. It is a bottom view of the semiconductor chip which concerns on Embodiment 4.
  • FIG. It is sectional drawing of the semiconductor device which concerns on Embodiment 4.
  • FIG. It is a front view of the semiconductor device which concerns on Embodiment 4.
  • FIG. It is an enlarged view of the concave part which concerns on Embodiment 4.
  • FIG. It is an enlarged view of the concave part which concerns on Embodiment 4.
  • FIG. It is an enlarged view of the concave part which concerns on Embodiment 4.
  • FIG. It is a top view of the semiconductor chip which concerns on Embodiment 5. It is a bottom view of the semiconductor chip which concerns on Embodiment 5. It is sectional drawing of the semiconductor chip which concerns on Embodiment 5. It is sectional drawing of the semiconductor device which concerns on Embodiment 5.
  • FIG. It is an enlarged view of the concave part which concerns on Embodiment 5. It is an enlarged view of the concave part which concerns on Embodiment 5. It is an enlarged view of the concave part which concerns on Embodiment 5. It is an enlarged view of the concave part which concerns on Embodiment 5.
  • FIG. 1 is a perspective view of the semiconductor chip 1 according to the first embodiment.
  • FIG. 2A is a plan view of the semiconductor chip 1 according to the first embodiment.
  • FIG. 2B is a left side view of the semiconductor chip 1 according to the first embodiment.
  • FIG. 2C is a front view of the semiconductor chip 1 according to the first embodiment.
  • FIG. 2D is a right side view of the semiconductor chip 1 according to the first embodiment.
  • FIG. 2E is a bottom view of the semiconductor chip 1 according to the first embodiment.
  • the semiconductor chip 1 includes a semiconductor substrate 10.
  • a semiconductor layer is formed on the upper surface side of the semiconductor substrate 10.
  • the semiconductor layer constitutes an active element such as a semiconductor element for power amplification.
  • a circuit element may be formed on the upper surface side of the semiconductor substrate 10.
  • An electrode 20 is provided on the upper surface of the semiconductor substrate 10. The electrode 20 becomes an electrode of an active element or a circuit element.
  • a field effect transistor is formed on the semiconductor chip 1.
  • the semiconductor substrate 10 may be formed of SiC.
  • the active element formed on the semiconductor substrate 10 may be, for example, HEMT (High Electron Mobility Transistor) formed from GaN.
  • the electrode 20 includes a source electrode 21, a gate electrode 22, and a drain electrode 23.
  • a back surface conductor 30 is provided on the back surface, which is the surface facing the upper surface of the semiconductor substrate 10.
  • the back surface conductor 30 covers almost the entire back surface of the semiconductor substrate 10.
  • the back surface conductor 30 is provided at the center of the back surface of the semiconductor substrate 10.
  • the outer peripheral portion of the back surface of the semiconductor substrate 10 is exposed from the back surface conductor 30.
  • the entire back surface of the semiconductor substrate 10 may be covered with the back surface conductor 30.
  • the back surface conductor 30 may be insulated from the electrode 20. Further, the back surface conductor 30 may be electrically connected to the source electrode 21 via a via hole (not shown) formed in the semiconductor substrate 10.
  • a plurality of notches 12a to 12h are formed at the corners formed by the back surface of the semiconductor chip 1 and the side surface connected to the back surface. Each of the plurality of notches 12a to 12h cuts out a part of the back surface side of the side surface of the semiconductor chip 1.
  • Notches 12a to 12c and notches 12e to 12g are formed on the two side surfaces extending in the longitudinal direction of the semiconductor chip 1, respectively.
  • a notch 12d and a notch 12h are formed on the two side surfaces extending in the lateral direction of the semiconductor chip 1, respectively.
  • Each of the notches 12a to 12h is formed from the semiconductor substrate 10 to the back surface conductor 30.
  • a plurality of first notches are formed at the corners formed by the back surface of the semiconductor substrate 10 facing the back surface conductor 30 and the side surface connected to the back surface.
  • a plurality of second notches are formed in the back surface conductor 30. The plurality of second notches penetrate the back surface conductor 30 from the first surface facing the semiconductor substrate 10 to the second surface facing the first surface.
  • Each of the plurality of second notches is connected to the plurality of first notches.
  • FIG. 3 is a diagram illustrating a method for manufacturing the semiconductor chip 1 according to the first embodiment.
  • FIG. 3 shows a method of forming a plurality of notches 12a to 12h.
  • a plurality of digging holes 112a to 112h are formed in the wafer state.
  • the plurality of digging holes 112a to 112h are arranged so as to span the areas of the dicing street 80 and the semiconductor chip 1 for chip separation, respectively.
  • FIG. 4 is a perspective view of the semiconductor chip 1a according to the comparative example.
  • FIG. 5A is a plan view of the semiconductor chip 1a according to the comparative example.
  • FIG. 5B is a left side view of the semiconductor chip 1a according to the comparative example.
  • FIG. 5C is a front view of the semiconductor chip 1a according to the comparative example.
  • FIG. 5D is a right side view of the semiconductor chip 1a according to the comparative example.
  • FIG. 5E is a bottom view of the semiconductor chip 1a according to the comparative example.
  • the semiconductor chip 1a according to the comparative example is different from the semiconductor chip 1 in that the notches 12a to 12h are not provided.
  • FIG. 6A is a plan view of the semiconductor device 2a according to the comparative example.
  • FIG. 6B is a front view of the semiconductor device 2a according to the comparative example.
  • the semiconductor chip 1a is bonded to the upper surface of the support 50 by the die bond material 40.
  • the die bond material 40 is provided on the entire back surface of the semiconductor chip 1a for efficient heat dissipation. In the semiconductor device 2a, whether or not the die bond material 40 is spread over the entire back surface of the semiconductor chip 1a is visually inspected. Whether or not the die-bonding material 40 is appropriately spread is determined by, for example, the size, shape, and the like of the portion of the die-bonding material 40 that protrudes from the semiconductor chip 1a when the semiconductor chip 1a is viewed from the upper surface side.
  • the die bond material 40 may crawl up to the upper surface of the semiconductor chip 1a as shown by the portion surrounded by the broken line 41. Therefore, the electrode 20 and the support 50 may be electrically connected to each other via the die bond material 40.
  • FIG. 7A is a plan view of the semiconductor device 2b according to another comparative example.
  • FIG. 7B is a front view of the semiconductor device 2b according to another comparative example.
  • the amount of the die bond material 40 is smaller than that in the semiconductor device 2a. As a result, the creeping up of the die bond material 40 can be suppressed. However, if the amount of the die-bonding material 40 is reduced, a portion where the die-bonding material 40 does not protrude is likely to be formed on the outer peripheral portion of the semiconductor chip 1a. At this time, it cannot be confirmed from the appearance whether or not the die bond material 40 is spread over the entire back surface of the semiconductor chip 1a.
  • FIG. 8 is a front view of the semiconductor device 2 according to the first embodiment.
  • the semiconductor device 2 includes a support 50, a semiconductor chip 1 provided on the support 50, and a die bond material 40 for joining the back surface of the semiconductor chip 1 and the support 50.
  • the support 50 is, for example, a heat sink.
  • the support 50 may be a substrate or a package.
  • the semiconductor chip 1 is die-bonded to the support 50 by the die-bonding material 40.
  • the die bond material 40 is, for example, a conductive die bond material.
  • the die bond material 40 fills the space between the upper surface of the support 50 and the back surface of the semiconductor chip 1, and fixes the semiconductor chip 1 to the support 50.
  • the die bond material 40 can efficiently exhaust heat or dissipate heat from the active element or circuit element formed on the semiconductor chip 1 to the support 50.
  • FIG. 9 is an enlarged view of the notch 12a according to the first embodiment.
  • FIG. 10 is an enlarged view of the notch 12b according to the first embodiment.
  • FIG. 11 is an enlarged view of the notch 12c according to the first embodiment.
  • 9 to 11 show a state in which the cutouts 12a to 12c and the die bond material 40 are visually observed from the side surface side of the semiconductor chip 1. It can be confirmed whether or not the die bond material 40 extends to the notch in each of the notches 12a to 12h. That is, the amount of the die bond material 40 applied to each of the notches 12a to 12h can be confirmed.
  • the inspection method of the semiconductor device 2 in the present embodiment will be described.
  • the back surface of the semiconductor chip 1 and the support 50 are joined by the die bond material 40.
  • the die bond material 40 is visually confirmed whether or not the die bond material 40 has spread to the notches.
  • the die bond material 40 can be visually recognized from the cutouts 12a and 12b. Therefore, on the back surface of the semiconductor chip 1, it can be confirmed that the die bond material 40 has spread to the notches 12a and 12b.
  • the die bond material 40 cannot be visually recognized from the notch 12c. Therefore, it can be confirmed that the die bond material 40 does not reach the notch 12c on the back surface of the semiconductor chip 1. That is, it can be visually confirmed that the die bond material 40 has not spread to the target range.
  • the target range is the range on the back surface of the semiconductor chip 1 where the die bond material 40 is required to be provided.
  • FIGS. 8 to 11 show an example in which the die bond material 40 is not exposed from the notch 12c for explanation.
  • the die bond material 40 is exposed from all of the plurality of notches 12a to 12h. That is, the die bond material 40 is integrally provided over the plurality of notches 12a to 12h.
  • Each size of the notch 12a to 12h should be set so that it can be confirmed from the appearance whether or not the die bond material 40 has reached the notch.
  • the size of each of the cutouts 12a to 12h is set according to, for example, the magnification of the magnifying glass used for the visual inspection.
  • an example of visually inspecting the appearance is shown. Not limited to this, the visual inspection may be carried out using an imaging device such as a camera.
  • the appearance inspection can be performed even if the die bond material 40 does not protrude from the semiconductor chip 1. Therefore, the coating amount of the die bond material 40 can be suppressed. Therefore, it is possible to prevent the die bond material 40 from creeping up on the upper surface of the semiconductor substrate 10. Therefore, it is possible to prevent the electrode 20 from conducting with the support 50 via the die bond material 40.
  • the die bond material 40 overflows from the notch 12a. However, since the die bond material 40 does not reach the electrode 20 provided on the upper surface of the semiconductor substrate 10, there is no problem.
  • the semiconductor device 2 and the semiconductor chip 1 of the present embodiment it is easy to confirm the range in which the die bond material 40 is spread by the notches 12a to 12h. As a result, it can be surely confirmed whether the die bond material 40 has reached the target range.
  • the semiconductor chip 1 for power amplification that generates a large amount of heat it is particularly important to secure an exhaust heat area. Further, since the electrode 20 can be prevented from coming into contact with the die bond material 40, the reliability of the semiconductor device 2 can be improved. Further, the consumption of the die bond material 40 can be reduced, and the manufacturing cost of the semiconductor device 2 can be reduced.
  • At least one of a plurality of notches 12a to 12h is formed on each side of the back surface of the semiconductor chip 1. That is, at least one of the plurality of first notches is formed on each side of the back surface of the semiconductor substrate 10. Thereby, it can be surely confirmed that the die bond material 40 extends to each side of the back surface of the semiconductor chip 1.
  • the die bond material 40 covers the entire back surface of the semiconductor chip 1.
  • a part of the back surface of the semiconductor chip 1 may be exposed from the die bond material 40. That is, depending on the required heat dissipation performance, the die bond material 40 may not be provided on the entire back surface of the semiconductor chip 1. Further, if sufficient heat dissipation is possible, the back surface conductor 30 may not be provided.
  • each of the plurality of notches 12a to 12h has a semi-elliptical shape when viewed from the direction perpendicular to the side surface or the back surface of the semiconductor substrate 10. Not limited to this, as the shape of the plurality of notches 12a to 12h, any shape that allows the state of the die bond material 40 to be visually confirmed can be adopted.
  • FIG. 12A is a plan view of the semiconductor chip 201 according to the second embodiment.
  • FIG. 12B is a left side view of the semiconductor chip 201 according to the second embodiment.
  • FIG. 12C is a front view of the semiconductor chip 201 according to the second embodiment.
  • FIG. 12D is a right side view of the semiconductor chip 201 according to the second embodiment.
  • FIG. 12E is a bottom view of the semiconductor chip 201 according to the second embodiment.
  • the semiconductor chip 201 of the present embodiment is different from the first embodiment in that notches 212a to 212h are formed instead of the notches 12a to 12h. Other structures are the same as in the first embodiment.
  • Each of the cutouts 212a to 212h penetrates the semiconductor chip 201 from the back surface to the upper surface facing the back surface.
  • the method of forming the notches 212a to 212h is the same as that of the notches 12a to 12h of the first embodiment.
  • a plurality of through holes are formed across the area of the dicing street and the semiconductor chip 201.
  • the plurality of through holes become notches 212a to 212h.
  • FIG. 13 is a plan view of the semiconductor device 202 according to the second embodiment.
  • the semiconductor chip 201 is bonded to the support 50 with a die bond material 40.
  • FIG. 14 is an enlarged view of the notch 212a according to the second embodiment.
  • FIG. 15 is an enlarged view of the notch 212b according to the second embodiment.
  • FIG. 16 is an enlarged view of the notch 212c according to the second embodiment. 14 to 16 show a state in which the cutouts 212a to 212c and the die bond material 40 are visually observed from the upper surface side of the semiconductor chip 201. It can be confirmed whether or not the die bond material 40 extends to the notch in each of the notches 212a to 212h.
  • the die bond material 40 can be visually recognized from the notches 212a and 212b. Therefore, it can be confirmed that the die bond material 40 has spread to the notches 212a and 212b on the back surface of the semiconductor chip 201. On the other hand, as shown in FIG. 16, the die bond material 40 cannot be visually recognized from the notch 212c. Therefore, it can be confirmed that the die bond material 40 does not reach the notch 212c on the back surface of the semiconductor chip 201.
  • FIGS. 13 to 16 show an example in which the die bond material 40 is not exposed from the notch 212c for explanation. Actually, in the good semiconductor device 202, the die bond material 40 is exposed from all of the plurality of notches 212a to 212h.
  • the manufacturing cost of the semiconductor device 202 can be reduced.
  • the die bond material 40 overflows from the notch 212b. Also in this case, it is sufficient that the die bond material 40 does not reach the electrode 20 provided on the upper surface of the semiconductor substrate 10. It can be visually confirmed from the side surface side of the semiconductor chip 201 that the die bond material 40 does not reach the upper surface of the semiconductor substrate 10.
  • the appearance inspection was performed from the upper surface of the semiconductor chip 201.
  • the range in which the die bond material 40 spreads may be determined by an visual inspection from the side surface side of the semiconductor chip 201.
  • Each of the plurality of notches 212a to 212h has a semi-elliptical shape when viewed from the direction perpendicular to the upper surface of the semiconductor substrate 10. Not limited to this, as the shapes of the plurality of notches 212a to 212h, any shape that allows the state of the die bond material 40 to be visually confirmed can be adopted.
  • FIG. 17A is a plan view of the semiconductor chip 301 according to the third embodiment.
  • FIG. 17B is a left side view of the semiconductor chip 301 according to the third embodiment.
  • FIG. 17C is a front view of the semiconductor chip 301 according to the third embodiment.
  • FIG. 17D is a right side view of the semiconductor chip 301 according to the third embodiment.
  • FIG. 17E is a bottom view of the semiconductor chip 301 according to the third embodiment.
  • the semiconductor chip 301 of the present embodiment is different from the first embodiment in that notches 312a to 312d are formed in place of the notches 12a to 12h. Other structures are the same as in the first embodiment.
  • Each of the plurality of notches 312a to 312d penetrates the semiconductor chip 201 from the back surface to the upper surface facing the back surface. Further, the plurality of notches 312a to 312d are formed at all the corners of the back surface of the semiconductor chip 301, respectively. That is, the plurality of notches 312a to 312d are formed at the four corners of the semiconductor chip 301.
  • the method of forming the notches 312a to 312d is the same as that of the notches 12a to 12h of the first embodiment.
  • a plurality of through holes are formed across the region of the dicing street and the semiconductor chip 301.
  • the plurality of through holes become notches 312a to 312d.
  • FIG. 18 is a plan view of the semiconductor device 302 according to the third embodiment.
  • the semiconductor chip 301 is bonded to the support 50 with a die bond material 40.
  • FIG. 19 is an enlarged view of the notch 312a according to the third embodiment.
  • FIG. 20 is an enlarged view of the notch 312b according to the third embodiment. 19 and 20 show the notches 312a and 312b and the die bond material 40 as viewed from the upper surface side of the semiconductor chip 301. In each of the notches 312a to 312d, it can be confirmed whether or not the die bond material 40 extends to the notches.
  • the die bond material 40 can be visually recognized from the notch 312a. Therefore, on the back surface of the semiconductor chip 301, it can be confirmed that the die bond material 40 has spread to the notch 312a. On the other hand, as shown in FIG. 20, the die bond material 40 cannot be seen from the notch 312b. Therefore, it can be confirmed that the die bond material 40 does not reach the notch 312b on the back surface of the semiconductor chip 301.
  • FIGS. 18 to 20 show an example in which the die bond material 40 is not exposed from the notch 312b. Actually, in the good semiconductor device 302, the die bond material 40 is exposed from all of the plurality of notches 312a to 312d.
  • the present embodiment it is easy to confirm the range in which the die bond material 40 is spread by the notches 312a to 312d. Further, also in the present embodiment, the appearance inspection can be performed even if the die bond material 40 does not protrude from the semiconductor chip 301. Therefore, the coating amount of the die bond material 40 can be suppressed, and the die bond material 40 can be prevented from creeping up on the upper surface of the semiconductor substrate 10. Therefore, the reliability of the semiconductor device 302 can be improved. Further, the consumption of the die bond material 40 can be reduced, and the manufacturing cost of the semiconductor device 302 can be reduced.
  • the die bond material 40 overflows from the notch 312a. Also in this case, it is sufficient that the die bond material 40 does not reach the electrode 20 provided on the upper surface of the semiconductor substrate 10. It can be visually confirmed from the side surface side of the semiconductor chip 301 that the die bond material 40 does not reach the upper surface of the semiconductor substrate 10.
  • Each of the plurality of notches 312a to 312d is fan-shaped when viewed from the direction perpendicular to the upper surface of the semiconductor substrate 10. Not limited to this, as the shapes of the plurality of notches 312a to 312d, any shape that allows the state of the die bond material 40 to be visually confirmed can be adopted.
  • FIG. 21A is a plan view of the semiconductor chip 401 according to the fourth embodiment.
  • FIG. 21B is a left side view of the semiconductor chip 401 according to the fourth embodiment.
  • FIG. 21C is a front view of the semiconductor chip 401 according to the fourth embodiment.
  • FIG. 21D is a right side view of the semiconductor chip 401 according to the fourth embodiment.
  • FIG. 21E is a bottom view of the semiconductor chip 401 according to the fourth embodiment.
  • the semiconductor chip 401 of the present embodiment has a transparent or translucent semiconductor substrate 410 instead of the semiconductor substrate 10.
  • the semiconductor substrate 410 is, for example, a SiC substrate.
  • a plurality of recesses 412a to 412f are formed on the outer peripheral portion of the semiconductor substrate 410 instead of the plurality of notches 12a to 12h.
  • Each of the plurality of recesses 412a to 412f penetrates the semiconductor chip 401 from the back surface to the top surface.
  • the recesses 412a to 412f are formed outside the electrode 20.
  • Other structures are the same as in the first embodiment.
  • FIG. 22 is a cross-sectional view of the semiconductor device 402 according to the fourth embodiment.
  • the semiconductor chip 401 is bonded to the support 50 with a die bond material 40.
  • the semiconductor substrate 410 is provided on the support 50.
  • a back surface conductor 30 and a die bond material 40 are provided between the semiconductor substrate 410 and the support 50.
  • a semiconductor layer 414 is provided on the upper surface side of the semiconductor substrate 410.
  • a via hole 416 is formed in the semiconductor substrate 410. The via hole 416 penetrates the semiconductor substrate 410 from the upper surface to the back surface.
  • the side surface of the semiconductor substrate 410 forming the via hole 416 is covered with plated wiring.
  • the plated wiring and the back surface conductor 30 are connected. Further, the plated wiring and the source electrode 21 are in contact with each other on the semiconductor substrate 410. As a result, the source electrode 21 is electrically connected to the support 50 via the plated electrode, the back surface conductor 30, and the die bond material 40. Therefore, the source electrode 21, the plating electrode, the back surface conductor 30, the die bond material 40, and the support 50 have the same potential.
  • the recess 412 shown in FIG. 22 is any of the recesses 412a to 412f. No plating electrode is provided on the side surface of the semiconductor substrate 410 forming the recess 412. Therefore, it is possible to visually confirm whether or not the die bond material has penetrated into the recess 412 via the transparent or translucent semiconductor substrate 410.
  • FIG. 23 is a front view of the semiconductor device 402 according to the fourth embodiment.
  • FIG. 24 is an enlarged view of the recess 412a according to the fourth embodiment.
  • FIG. 25 is an enlarged view of the recess 412b according to the fourth embodiment.
  • FIG. 26 is an enlarged view of the recess 412c according to the fourth embodiment.
  • FIGS. 24 to 26 show a state in which the recesses 412a to 412c and the die bond material 40 are visually observed through the semiconductor substrate 410.
  • FIGS. 24 to 26 show a state in which the semiconductor chip 401 is viewed from, for example, a direction perpendicular to the side surface. It can be confirmed whether or not the die bond material 40 has entered the recesses in each of the recesses 412a to 412f.
  • the die bond material 40 that has entered the recesses 412a and 412b can be seen through the semiconductor substrate 410. Therefore, on the back surface of the semiconductor chip 401, it can be confirmed that the die bond material 40 has spread to the recesses 412a and 412b. On the other hand, as shown in FIG. 26, the die bond material 40 cannot be visually recognized in the recess 412c. Therefore, on the back surface of the semiconductor chip 401, it can be confirmed that the die bond material 40 does not reach the recess 412c.
  • FIGS. 23 to 26 show an example in which the die bond material 40 does not invade the recess 412c for explanation.
  • the die bond material 40 has penetrated into each of the plurality of recesses 412a to 412f.
  • the die bond material 40 is integrally provided over a plurality of recesses 412a to 412f.
  • the present embodiment it is easy to confirm the range in which the die bond material 40 is spread by the transparent or translucent semiconductor substrate 410 and the recesses 412a to 412f. Further, the appearance inspection can be performed even if the die bond material 40 does not protrude from the semiconductor chip 401. Therefore, the coating amount of the die bond material 40 can be suppressed, and the die bond material 40 can be prevented from creeping up on the upper surface of the semiconductor substrate 410. Therefore, the reliability of the semiconductor device 402 can be improved. Further, the consumption of the die bond material 40 can be reduced, and the manufacturing cost of the semiconductor device 402 can be reduced.
  • the recesses 412a to 412c extend along one long side of the semiconductor substrate 410. Further, the recesses 412d to 412f extend along the other long side of the semiconductor substrate 410. Further, the recesses 412a and 412d extend along one short side of the semiconductor substrate 410. Further, the recesses 412c and 412f extend along the other short side of the semiconductor substrate 410. In this way, at least one of the plurality of recesses 412a to 412f is formed along each side of the back surface of the semiconductor substrate 410. As a result, it can be confirmed that the die bond material 40 extends to each side of the back surface of the semiconductor chip 401.
  • the plurality of recesses 412a, 412c, 412d, and 412f are formed at all the corners of the back surface of the semiconductor substrate 410 facing the support 50, respectively. As a result, it can be confirmed that the die bond material 40 extends to the four corners of the back surface of the semiconductor chip 401.
  • the arrangement, number, and shape of the plurality of recesses 412a to 412f may be changed depending on the shape of the semiconductor chip 401, the range in which the die bond material 40 is provided, and the like.
  • the plurality of recesses 412a to 412f do not have to penetrate the semiconductor substrate 410.
  • the plurality of recesses 412a to 412f may be formed on the outer peripheral portion of the back surface of the semiconductor substrate 410.
  • the semiconductor substrate 410 may be formed of a material that can be transparently confirmed whether or not the die bond material 40 has invaded the recesses 412a to 412f.
  • FIG. 27A is a plan view of the semiconductor chip 501 according to the fifth embodiment.
  • FIG. 27B is a bottom view of the semiconductor chip 501 according to the fifth embodiment.
  • FIG. 28 is a cross-sectional view of the semiconductor chip 501 according to the fifth embodiment.
  • FIG. 28 is a cross-sectional view obtained by cutting FIG. 27A along a straight line AB.
  • a plurality of recesses 412a to 412f are formed on the outer peripheral portion of the semiconductor substrate 410 so as to penetrate the semiconductor substrate 410 from the back surface to the upper surface facing the back surface.
  • the semiconductor chip 501 has a plurality of conductors 560a to 560f embedded in the plurality of recesses 412a to 412f from the upper surface side of the semiconductor substrate 410, respectively.
  • the lower ends of the plurality of conductors 560a to 560f are provided between the upper surface and the back surface of the semiconductor substrate 410, respectively.
  • the lower ends of the plurality of conductors 560a to 560f are separated from the back surface of the semiconductor substrate 410.
  • each of the plurality of conductors 560a to 560f is separated from the electrode 20 of the semiconductor chip 501.
  • the conductor 560a has a main portion 561a provided inside the recess 412a and a wide portion 562a provided on the upper surface of the semiconductor substrate 410.
  • the wide portion 562a is wider than the recess 412a. The same applies to the conductors 560b to 560f.
  • FIG. 29 is a cross-sectional view of the semiconductor device 502 according to the fifth embodiment.
  • the semiconductor chip 501 is bonded to the support 50 with the die bond material 40.
  • FIG. 30 is an enlarged view of the recess 412a according to the fifth embodiment.
  • FIG. 31 is an enlarged view of the recess 412b according to the fifth embodiment.
  • FIG. 32 is an enlarged view of the recess 412c according to the fifth embodiment.
  • the presence or absence of the die bond material 40 that has entered the recesses 412a to 412f can be visually confirmed from the side surface side of the semiconductor chip 501. Therefore, the same effect as that of the fourth embodiment can be obtained.
  • the conductors 560a and 560b are in contact with the die bond material 40, respectively. Therefore, the conductors 560a and 560b are conductive with the support 50.
  • the conductor 560c is not in contact with the die bond material 40. Therefore, the conductor 560c is not conductive with the support 50.
  • the die bond material 40 has spread to the target range on the back surface of the semiconductor chip 501 depending on the presence or absence of continuity between the conductors 560a to 560f and the support 50.
  • FIGS. 29 to 32 show an example in which the conductor 560c and the die bond material 40 are not in contact with each other for explanation.
  • each of the plurality of conductors 560a to 560f is in contact with the die bond material 40.
  • the die bond material 40 is integrally provided over a plurality of recesses 412a to 412f.
  • the coating state of the die bond material 40 can be confirmed by a continuity inspection. Therefore, the visual confirmation process can be reduced.
  • the semiconductor substrate 410 may not be transparent or translucent. Further, the range in which the die bond material 40 spreads may be confirmed by combining the continuity inspection and the appearance inspection.
  • the continuity inspection can be easily performed.

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  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PCT/JP2019/033462 2019-08-27 2019-08-27 半導体装置および半導体チップ Ceased WO2021038712A1 (ja)

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JP2021541834A JP7173361B2 (ja) 2019-08-27 2019-08-27 半導体装置
PCT/JP2019/033462 WO2021038712A1 (ja) 2019-08-27 2019-08-27 半導体装置および半導体チップ
US17/607,359 US12113040B2 (en) 2019-08-27 2019-08-27 Semiconductor device
KR1020217040275A KR102556121B1 (ko) 2019-08-27 2019-08-27 반도체 장치
CN201980099596.6A CN114270482B (zh) 2019-08-27 2019-08-27 半导体装置
DE112019007675.2T DE112019007675T5 (de) 2019-08-27 2019-08-27 Halbleitervorrichtung und Halbleiter-Chip
TW109120036A TWI760771B (zh) 2019-08-27 2020-06-15 半導體裝置

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CN114270482B (zh) 2024-11-29
JP7173361B2 (ja) 2022-11-16
KR20220006598A (ko) 2022-01-17
DE112019007675T5 (de) 2022-06-15
JPWO2021038712A1 (https=) 2021-03-04
CN114270482A (zh) 2022-04-01
KR102556121B1 (ko) 2023-07-14
TWI760771B (zh) 2022-04-11
TW202123389A (zh) 2021-06-16

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