TWI760771B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI760771B
TWI760771B TW109120036A TW109120036A TWI760771B TW I760771 B TWI760771 B TW I760771B TW 109120036 A TW109120036 A TW 109120036A TW 109120036 A TW109120036 A TW 109120036A TW I760771 B TWI760771 B TW I760771B
Authority
TW
Taiwan
Prior art keywords
bonding material
semiconductor wafer
die bonding
semiconductor
back surface
Prior art date
Application number
TW109120036A
Other languages
English (en)
Chinese (zh)
Other versions
TW202123389A (zh
Inventor
浅田智之
福田絵理
津波大介
Original Assignee
日商三菱電機股份有限公司
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Publication date
Application filed by 日商三菱電機股份有限公司 filed Critical 日商三菱電機股份有限公司
Publication of TW202123389A publication Critical patent/TW202123389A/zh
Application granted granted Critical
Publication of TWI760771B publication Critical patent/TWI760771B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/332—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW109120036A 2019-08-27 2020-06-15 半導體裝置 TWI760771B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2019/033462 2019-08-27
PCT/JP2019/033462 WO2021038712A1 (ja) 2019-08-27 2019-08-27 半導体装置および半導体チップ

Publications (2)

Publication Number Publication Date
TW202123389A TW202123389A (zh) 2021-06-16
TWI760771B true TWI760771B (zh) 2022-04-11

Family

ID=74683908

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109120036A TWI760771B (zh) 2019-08-27 2020-06-15 半導體裝置

Country Status (7)

Country Link
US (1) US12113040B2 (https=)
JP (1) JP7173361B2 (https=)
KR (1) KR102556121B1 (https=)
CN (1) CN114270482B (https=)
DE (1) DE112019007675T5 (https=)
TW (1) TWI760771B (https=)
WO (1) WO2021038712A1 (https=)

Citations (10)

* Cited by examiner, † Cited by third party
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JP2005353740A (ja) * 2004-06-09 2005-12-22 Toshiba Corp 半導体素子及び半導体装置
TW200950046A (en) * 2008-05-23 2009-12-01 Xintec Inc Electronics device package and fabrication method thereof
TW201327732A (zh) * 2011-12-21 2013-07-01 精材科技股份有限公司 晶片封裝體及其製作方法
TW201407825A (zh) * 2012-08-15 2014-02-16 晶元光電股份有限公司 發光元件
TW201421740A (zh) * 2008-12-12 2014-06-01 東芝股份有限公司 發光元件以及其製造方法
TW201434184A (zh) * 2013-02-19 2014-09-01 東芝股份有限公司 半導體發光裝置及發光裝置
TW201538655A (zh) * 2014-01-29 2015-10-16 日立化成股份有限公司 黏著劑組成物、使用黏著劑組成物之半導體裝置的製造方法、及固態成像元件
TW201714922A (zh) * 2015-05-25 2017-05-01 Konica Minolta Inc 聚醯亞胺薄膜、聚醯亞胺薄膜之製造方法、可撓性印刷基板、可撓性顯示器用基板、可撓性顯示器用前面板、ｌｅｄ照明裝置及有機電致發光顯示裝置
TW201733165A (zh) * 2016-03-15 2017-09-16 晶元光電股份有限公司 半導體裝置及其製造方法
TW201841309A (zh) * 2016-12-21 2018-11-16 日商大日本印刷股份有限公司 貫通電極基板、半導體裝置及貫通電極基板之製造方法

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FR2587081B1 (fr) * 1985-09-11 1988-04-15 Bp Chimie Sa Dispositif doseur de type rotatif permettant de delivrer des substances granulaires
US4956694A (en) * 1988-11-04 1990-09-11 Dense-Pac Microsystems, Inc. Integrated circuit chip stacking
JPH0550731U (ja) * 1991-12-05 1993-07-02 オリジン電気株式会社 絶縁基板，それを用いた半導体装置および回路装置
JPH06260723A (ja) * 1993-03-03 1994-09-16 Mitsubishi Electric Corp 半導体レーザ装置
US5891761A (en) * 1994-06-23 1999-04-06 Cubic Memory, Inc. Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform
JP2853700B2 (ja) * 1997-03-12 1999-02-03 日本電気株式会社 半導体装置
JP2001345542A (ja) 2000-05-31 2001-12-14 Kyocera Corp 電子部品の実装構造
JP3890909B2 (ja) 2001-03-19 2007-03-07 カシオ計算機株式会社 電子部品およびその接合方法
SG111069A1 (en) * 2002-06-18 2005-05-30 Micron Technology Inc Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
SG107595A1 (en) * 2002-06-18 2004-12-29 Micron Technology Inc Semiconductor devices and semiconductor device components with peripherally located, castellated contacts, assembles and packages including such semiconductor devices or packages and associated methods
US6855572B2 (en) * 2002-08-28 2005-02-15 Micron Technology, Inc. Castellation wafer level packaging of integrated circuit chips
JP2010021251A (ja) 2008-07-09 2010-01-28 Panasonic Corp 半導体装置及びその製造方法
US8053898B2 (en) * 2009-10-05 2011-11-08 Samsung Electronics Co., Ltd. Connection for off-chip electrostatic discharge protection
KR101697573B1 (ko) * 2010-11-29 2017-01-19 삼성전자 주식회사 반도체 장치, 그 제조 방법, 및 상기 반도체 장치를 포함하는 반도체 패키지
US9117804B2 (en) * 2013-09-13 2015-08-25 United Microelectronics Corporation Interposer structure and manufacturing method thereof
JP2017050489A (ja) * 2015-09-04 2017-03-09 株式会社東芝 半導体パッケージおよび半導体パッケージの製造方法
TWI610413B (zh) * 2017-03-15 2018-01-01 南茂科技股份有限公司 半導體封裝結構、半導體晶圓及半導體晶片
JP2018046289A (ja) 2017-11-21 2018-03-22 エイブリック株式会社 半導体装置およびその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353740A (ja) * 2004-06-09 2005-12-22 Toshiba Corp 半導体素子及び半導体装置
TW200950046A (en) * 2008-05-23 2009-12-01 Xintec Inc Electronics device package and fabrication method thereof
TW201421740A (zh) * 2008-12-12 2014-06-01 東芝股份有限公司 發光元件以及其製造方法
TW201327732A (zh) * 2011-12-21 2013-07-01 精材科技股份有限公司 晶片封裝體及其製作方法
TW201407825A (zh) * 2012-08-15 2014-02-16 晶元光電股份有限公司 發光元件
TW201434184A (zh) * 2013-02-19 2014-09-01 東芝股份有限公司 半導體發光裝置及發光裝置
TW201538655A (zh) * 2014-01-29 2015-10-16 日立化成股份有限公司 黏著劑組成物、使用黏著劑組成物之半導體裝置的製造方法、及固態成像元件
TW201714922A (zh) * 2015-05-25 2017-05-01 Konica Minolta Inc 聚醯亞胺薄膜、聚醯亞胺薄膜之製造方法、可撓性印刷基板、可撓性顯示器用基板、可撓性顯示器用前面板、ｌｅｄ照明裝置及有機電致發光顯示裝置
TW201733165A (zh) * 2016-03-15 2017-09-16 晶元光電股份有限公司 半導體裝置及其製造方法
TW201841309A (zh) * 2016-12-21 2018-11-16 日商大日本印刷股份有限公司 貫通電極基板、半導體裝置及貫通電極基板之製造方法

Also Published As

Publication number Publication date
US12113040B2 (en) 2024-10-08
US20220223558A1 (en) 2022-07-14
CN114270482B (zh) 2024-11-29
JP7173361B2 (ja) 2022-11-16
WO2021038712A1 (ja) 2021-03-04
KR20220006598A (ko) 2022-01-17
DE112019007675T5 (de) 2022-06-15
JPWO2021038712A1 (https=) 2021-03-04
CN114270482A (zh) 2022-04-01
KR102556121B1 (ko) 2023-07-14
TW202123389A (zh) 2021-06-16

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