KR102526635B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102526635B1
KR102526635B1 KR1020227012786A KR20227012786A KR102526635B1 KR 102526635 B1 KR102526635 B1 KR 102526635B1 KR 1020227012786 A KR1020227012786 A KR 1020227012786A KR 20227012786 A KR20227012786 A KR 20227012786A KR 102526635 B1 KR102526635 B1 KR 102526635B1
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South Korea
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oxide semiconductor
semiconductor layer
transistor
layer
electrode layer
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Korean (ko)
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KR20220053052A (ko
Inventor
다이스케 마츠바야시
사토시 시노하라
와타루 세키네
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H01L29/78612—
    • H01L29/78696—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
KR1020227012786A 2012-11-30 2013-11-19 반도체 장치 Active KR102526635B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237013844A KR102720789B1 (ko) 2012-11-30 2013-11-19 반도체 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012261795 2012-11-30
JPJP-P-2012-261795 2012-11-30
KR1020217009894A KR102389073B1 (ko) 2012-11-30 2013-11-19 반도체 장치
PCT/JP2013/081577 WO2014084152A1 (en) 2012-11-30 2013-11-19 Semiconductor device

Related Parent Applications (1)

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KR1020217009894A Division KR102389073B1 (ko) 2012-11-30 2013-11-19 반도체 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020237013844A Division KR102720789B1 (ko) 2012-11-30 2013-11-19 반도체 장치

Publications (2)

Publication Number Publication Date
KR20220053052A KR20220053052A (ko) 2022-04-28
KR102526635B1 true KR102526635B1 (ko) 2023-04-26

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Family Applications (6)

Application Number Title Priority Date Filing Date
KR1020247034716A Active KR102841348B1 (ko) 2012-11-30 2013-11-19 반도체 장치
KR1020237013844A Active KR102720789B1 (ko) 2012-11-30 2013-11-19 반도체 장치
KR1020157016783A Expired - Fee Related KR102248765B1 (ko) 2012-11-30 2013-11-19 반도체 장치
KR1020217009894A Active KR102389073B1 (ko) 2012-11-30 2013-11-19 반도체 장치
KR1020227012786A Active KR102526635B1 (ko) 2012-11-30 2013-11-19 반도체 장치
KR1020257025308A Pending KR20250117485A (ko) 2012-11-30 2013-11-19 반도체 장치

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Application Number Title Priority Date Filing Date
KR1020247034716A Active KR102841348B1 (ko) 2012-11-30 2013-11-19 반도체 장치
KR1020237013844A Active KR102720789B1 (ko) 2012-11-30 2013-11-19 반도체 장치
KR1020157016783A Expired - Fee Related KR102248765B1 (ko) 2012-11-30 2013-11-19 반도체 장치
KR1020217009894A Active KR102389073B1 (ko) 2012-11-30 2013-11-19 반도체 장치

Family Applications After (1)

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KR1020257025308A Pending KR20250117485A (ko) 2012-11-30 2013-11-19 반도체 장치

Country Status (6)

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US (2) US9252283B2 (enExample)
JP (6) JP6340190B2 (enExample)
KR (6) KR102841348B1 (enExample)
CN (3) CN116207143A (enExample)
TW (2) TWI632641B (enExample)
WO (1) WO2014084152A1 (enExample)

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KR102207028B1 (ko) 2012-12-03 2021-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102234236B1 (ko) 2013-09-13 2021-04-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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