JP4963021B2 - 半導体構造 - Google Patents
半導体構造 Download PDFInfo
- Publication number
- JP4963021B2 JP4963021B2 JP2005257580A JP2005257580A JP4963021B2 JP 4963021 B2 JP4963021 B2 JP 4963021B2 JP 2005257580 A JP2005257580 A JP 2005257580A JP 2005257580 A JP2005257580 A JP 2005257580A JP 4963021 B2 JP4963021 B2 JP 4963021B2
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- Prior art keywords
- amorphous
- semiconductor
- electrode layer
- film
- metal
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 81
- 239000002184 metal Substances 0.000 claims description 80
- 238000000151 deposition Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 38
- 230000008021 deposition Effects 0.000 claims description 33
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- 239000002245 particle Substances 0.000 claims description 15
- 238000002425 crystallisation Methods 0.000 claims description 14
- 230000008025 crystallization Effects 0.000 claims description 14
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 118
- 239000010408 film Substances 0.000 description 110
- 239000010409 thin film Substances 0.000 description 53
- 239000012535 impurity Substances 0.000 description 39
- 239000013078 crystal Substances 0.000 description 35
- 238000009792 diffusion process Methods 0.000 description 30
- 229910052710 silicon Inorganic materials 0.000 description 26
- 238000004544 sputter deposition Methods 0.000 description 21
- 230000006870 function Effects 0.000 description 20
- 239000010949 copper Substances 0.000 description 19
- 239000007789 gas Substances 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 16
- 229910052718 tin Inorganic materials 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 150000002739 metals Chemical class 0.000 description 15
- 229910052715 tantalum Inorganic materials 0.000 description 15
- 229910052719 titanium Inorganic materials 0.000 description 15
- 239000010936 titanium Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052735 hafnium Inorganic materials 0.000 description 14
- 239000005300 metallic glass Substances 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910052726 zirconium Inorganic materials 0.000 description 14
- -1 and further Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 238000002156 mixing Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 5
- 229910052688 Gadolinium Inorganic materials 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 239000005083 Zinc sulfide Substances 0.000 description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 5
- 238000005280 amorphization Methods 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 5
- 229910001195 gallium oxide Inorganic materials 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 230000001771 impaired effect Effects 0.000 description 5
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 229910052746 lanthanum Inorganic materials 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 150000001247 metal acetylides Chemical class 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052758 niobium Inorganic materials 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 5
- 150000004763 sulfides Chemical class 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 229910052720 vanadium Inorganic materials 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 4
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- 229910052707 ruthenium Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
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- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910018514 Al—O—N Inorganic materials 0.000 description 2
- 229910006360 Si—O—N Inorganic materials 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
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- 229910021529 ammonia Inorganic materials 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/406—Oxides of iron group metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Description
それは、熱力学的に最安定な構造である結晶となる前に動力学的に準安定な構造を凍結することが重要である。すなわち、成長表面上に供給された電極材料原子(分子)が表面拡散を繰り返しながら安定な構造体である結晶構造のサイトに配列し安定化する前に、新たな材料原子(分子)によって押さえ込まれ、凍結されるような環境とすることが重要である。そのためには、成長表面上の拡散種の拡散距離を抑制し、安定なサイトへ到達することを抑制することが望ましい。そこで、本願発明においては、以下のような手段によってアモルファス金属を得た。
金属原料として有機金属であるRu(EtCp)2を、反応性酸化ガスとしてオゾン含有酸素ガスを用いた。なお、運動エネルギーの低い金属原料ガスとしてRu(EtCp)2を用いているが、他の有機金属、すなわちCp系やCOD系の他の環状有機物の配位した有機金属でもよいし、βジケトン系有機金属、高蒸気圧のハロゲン化物や酸化物すなわちRuF6やRuO4を用いてもよい。また、カルボニル系の有機金属を用いてもよい。すなわち、イオン種であったり高運動エネルギー粒子の状態でなければ、どのような態様であってもよい。また同様に運動エネルギーの低い反応性酸化ガスとしてオゾン含有酸素ガスを用いているが、イオン種であったり高運動エネルギー粒子の状態でなければどのような反応性酸化ガスでもよい。すなわち、原子状酸素や酸化窒素、二酸化窒素または、これらの反応性酸化ガスを紫外光で励起した励起種であってもよい。
なお、原子間力顕微鏡で表面モフォロジーを測定したところ、約5nmの熱酸化SiO2を形成したSi基板上に堆積した薄膜でRms=0.90 nmが、約4nmのLa2O3を堆積したSi基板上に堆積した薄膜でRms=0.51 nmが得られた。ここで、Rmsとは、Root Mean Square の略であり、平均値からの2乗の平均の平方根である。
以上の結果より、アモルファスRu酸化物は、仕事関数φ=5.0〜5.3eVの値を持ち、抵抗率は、1mΩcm以下、表面荒さ1nmを有するpチャンネル用電極として有望な材料であることが明らかになった。Ru金属の仕事関数は4.7eVと知られていることから、本アモルファスRu酸化物薄膜の酸素濃度制御をより精緻に行うことにより4.7〜5.3eVの範囲内で仕事関数を制御し、トランジスタの閾値をより詳細に制御できる可能性がある。
なお、本発明は上記実施形態に限定されるものではなく、その要旨を逸脱しない範囲で、種々変形して実施することが可能である。すなわち、上記作製例はアモルファス酸化物金属の場合について記述しているが、窒化物、硫化物、炭化物、珪化物、ホウ化物、リン化物であってもよい。例えば窒化物である場合、低運動エネルギー反応性窒化ガスとして、アンモニアや原子状窒素を用いることができる。
めっきにより銅配線の埋め込みを行いCMPで平坦化してさらなる積層配線の工程へと進む(図10(f))。
Claims (4)
- 半導体、該半導体を覆う誘電体層及び該誘電体層を覆う電極層から成る半導体構造体において、
該電極層は、表面荒さが1nm以下で抵抗率が70μΩcm以上1mΩcm以下のアモルファス構造のRu酸化物であり、該アモルファス構造は、MOCVD法又は原子層堆積法により活性粒子を用いて形成されたものであり、
前記半導体は、基板に起立した構造をとり、前記誘電体層及び前記電極層は、該半導体の少なくとも1つの側面を被覆しており、
前記電極層の一部又は全てが、基板に対して70度以上90度以下の角度で起立している側面を被覆する構造をとり、該側面の上部を被覆する電極層の厚みと該側面の下部を被覆する電極層の厚みとの比が0.9〜1.2の範囲であることを特徴とする半導体構造体。 - 前記電極層は、アモルファス構造又はアモルファス構造及び多結晶構造の積層構造から成り、該アモルファス構造の電極層は、絶縁性誘電体層と接した構造であり、該アモルファス構造の電極層の厚みは、4nm以上150nm以下であることを特徴とする請求項1に記載の半導体構造体。
- 前記電極層のアモルファス構造は、炭素を0.001%以上5%以下含有することを特徴とする請求項1又は2に記載の半導体構造体。
- 請求項1記載の半導体構造体の作製方法であって、
運動エネルギーの低い金属原料ガス及び運動エネルギーの低い反応性酸化ガス又は反応性窒化ガスを10-1Torr以上760Torr以下の圧力で結晶化温度以下の低基板温度に設定された基板上に結晶化が起こらない高堆積速度、結晶化が起こらない膜厚で供給することにより前記アモルファス構造を形成することを特徴とする半導体構造体の作製方法。
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2005
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2006
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US20090134465A1 (en) | 2009-05-28 |
JP2007073663A (ja) | 2007-03-22 |
US8089117B2 (en) | 2012-01-03 |
WO2007029482A1 (ja) | 2007-03-15 |
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