KR102503687B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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KR102503687B1
KR102503687B1 KR1020227005196A KR20227005196A KR102503687B1 KR 102503687 B1 KR102503687 B1 KR 102503687B1 KR 1020227005196 A KR1020227005196 A KR 1020227005196A KR 20227005196 A KR20227005196 A KR 20227005196A KR 102503687 B1 KR102503687 B1 KR 102503687B1
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transistor
oxide semiconductor
layer
source
drain
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KR20220025274A (ko
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요시아끼 오이까와
겐이찌 오까자끼
호따까 마루야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L27/1214—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L29/7869—
    • H01L29/78696—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Shift Register Type Memory (AREA)
  • Formation Of Insulating Films (AREA)
  • Dram (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020227005196A 2009-07-03 2010-06-09 반도체 장치의 제작 방법 Active KR102503687B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2009-159065 2009-07-03
JP2009159065 2009-07-03
KR1020217007220A KR102365458B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
PCT/JP2010/060150 WO2011001822A1 (en) 2009-07-03 2010-06-09 Method for manufacturing semiconductor device

Related Parent Applications (1)

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KR1020217007220A Division KR102365458B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법

Publications (2)

Publication Number Publication Date
KR20220025274A KR20220025274A (ko) 2022-03-03
KR102503687B1 true KR102503687B1 (ko) 2023-02-27

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KR1020177030034A Ceased KR20170119742A (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020127003001A Active KR102096109B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020157010875A Active KR101610606B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020207011990A Active KR102228220B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020197000820A Active KR102106460B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020227005196A Active KR102503687B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020217007220A Active KR102365458B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법

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KR1020177030034A Ceased KR20170119742A (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020127003001A Active KR102096109B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020157010875A Active KR101610606B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020207011990A Active KR102228220B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법
KR1020197000820A Active KR102106460B1 (ko) 2009-07-03 2010-06-09 반도체 장치의 제작 방법

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US (3) US8637347B2 (enExample)
EP (1) EP2449593B1 (enExample)
JP (10) JP4999968B2 (enExample)
KR (7) KR20170119742A (enExample)
CN (1) CN102473729B (enExample)
TW (5) TWI594330B (enExample)
WO (1) WO2011001822A1 (enExample)

Families Citing this family (61)

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KR102011616B1 (ko) 2009-06-30 2019-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101968855B1 (ko) 2009-06-30 2019-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101810699B1 (ko) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
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CN107690696A (zh) * 2015-06-30 2018-02-13 硅显示技术有限公司 氧化物半导体薄膜晶体管及其制造方法
KR102343573B1 (ko) * 2017-05-26 2021-12-28 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
KR20220034280A (ko) 2020-09-10 2022-03-18 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
WO2024201685A1 (ja) * 2023-03-28 2024-10-03 シャープディスプレイテクノロジー株式会社 自発光型表示装置および自発光型表示装置の製造方法
TWI841366B (zh) * 2023-04-28 2024-05-01 國立中興大學 雙波段薄膜電晶體檢光器
WO2025069400A1 (ja) * 2023-09-29 2025-04-03 株式会社日立ハイテク 電気特性評価方法、電気特性評価装置、電気特性評価システム

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