KR102242288B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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KR102242288B1
KR102242288B1 KR1020140005242A KR20140005242A KR102242288B1 KR 102242288 B1 KR102242288 B1 KR 102242288B1 KR 1020140005242 A KR1020140005242 A KR 1020140005242A KR 20140005242 A KR20140005242 A KR 20140005242A KR 102242288 B1 KR102242288 B1 KR 102242288B1
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South Korea
Prior art keywords
film
oxide
oxide semiconductor
insulating film
forming
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Expired - Fee Related
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Korean (ko)
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KR20140094448A (ko
Inventor
준이치 코에주카
유키노리 시마
스즈노스케 히라이시
켄이치 오카자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020140005242A 2013-01-21 2014-01-15 반도체 장치의 제작 방법 Expired - Fee Related KR102242288B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210047965A KR102391366B1 (ko) 2013-01-21 2021-04-13 반도체 장치의 제작 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013008628 2013-01-21
JPJP-P-2013-008628 2013-01-21
JPJP-P-2013-053192 2013-03-15
JP2013053192 2013-03-15

Related Child Applications (1)

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Publications (2)

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KR20140094448A KR20140094448A (ko) 2014-07-30
KR102242288B1 true KR102242288B1 (ko) 2021-04-19

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KR1020140005242A Expired - Fee Related KR102242288B1 (ko) 2013-01-21 2014-01-15 반도체 장치의 제작 방법
KR1020210047965A Active KR102391366B1 (ko) 2013-01-21 2021-04-13 반도체 장치의 제작 방법
KR1020220049564A Active KR102683722B1 (ko) 2013-01-21 2022-04-21 반도체 장치의 제작 방법

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KR1020220049564A Active KR102683722B1 (ko) 2013-01-21 2022-04-21 반도체 장치의 제작 방법

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US (6) US9768314B2 (enExample)
JP (7) JP6371061B2 (enExample)
KR (3) KR102242288B1 (enExample)
TW (1) TWI614813B (enExample)

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KR102456654B1 (ko) 2014-11-26 2022-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
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WO2016125051A1 (en) 2015-02-04 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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US10002970B2 (en) 2015-04-30 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, or display device including the same
JP6434617B2 (ja) * 2015-05-22 2018-12-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびそれを用いたプラズマ処理方法
JP2017049762A (ja) 2015-09-01 2017-03-09 株式会社東芝 システム及び方法
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6878820B2 (ja) * 2015-11-17 2021-06-02 株式会社リコー 電界効果型トランジスタ、表示素子、表示装置、システム、及び電界効果型トランジスタの製造方法
CN108352410B (zh) * 2015-11-25 2021-06-29 株式会社爱发科 薄膜晶体管、氧化物半导体膜以及溅射靶材
JP6548586B2 (ja) 2016-02-03 2019-07-24 東京エレクトロン株式会社 成膜方法
JP6584347B2 (ja) * 2016-03-02 2019-10-02 東京エレクトロン株式会社 成膜方法
US11302717B2 (en) 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
US20170301699A1 (en) * 2016-04-13 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
FR3050338B1 (fr) * 2016-04-15 2023-01-06 Enerbee Generateur d'electricite comprenant un convertisseur magneto-electrique et procede de fabrication associe
JP6733516B2 (ja) 2016-11-21 2020-08-05 東京エレクトロン株式会社 半導体装置の製造方法
KR102638779B1 (ko) * 2017-01-03 2024-02-22 삼성전자주식회사 이미지 센서
WO2018146569A1 (ja) * 2017-02-07 2018-08-16 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
TWI778959B (zh) 2017-03-03 2022-10-01 日商半導體能源硏究所股份有限公司 半導體裝置及半導體裝置的製造方法
CN107172337B (zh) * 2017-06-29 2019-08-27 京东方科技集团股份有限公司 一种智能画框及其中的图像采集装置的切换方法
JP2018045707A (ja) * 2017-11-27 2018-03-22 株式会社東芝 システム、方法及びセンサ装置
KR20230164225A (ko) * 2018-02-01 2023-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
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