KR102226985B1 - 산화물 반도체 기판 및 쇼트키 배리어 다이오드 - Google Patents

산화물 반도체 기판 및 쇼트키 배리어 다이오드 Download PDF

Info

Publication number
KR102226985B1
KR102226985B1 KR1020167004121A KR20167004121A KR102226985B1 KR 102226985 B1 KR102226985 B1 KR 102226985B1 KR 1020167004121 A KR1020167004121 A KR 1020167004121A KR 20167004121 A KR20167004121 A KR 20167004121A KR 102226985 B1 KR102226985 B1 KR 102226985B1
Authority
KR
South Korea
Prior art keywords
oxide semiconductor
delete delete
barrier diode
semiconductor layer
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167004121A
Other languages
English (en)
Korean (ko)
Other versions
KR20160043967A (ko
Inventor
시게카즈 도마이
마사토시 시바타
에미 가와시마
고키 야노
히로미 하야사카
Original Assignee
이데미쓰 고산 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데미쓰 고산 가부시키가이샤 filed Critical 이데미쓰 고산 가부시키가이샤
Publication of KR20160043967A publication Critical patent/KR20160043967A/ko
Application granted granted Critical
Publication of KR102226985B1 publication Critical patent/KR102226985B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L29/872—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H01L29/26—
    • H01L29/435—
    • H01L29/47—
    • H01L29/517—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020167004121A 2013-08-19 2014-08-08 산화물 반도체 기판 및 쇼트키 배리어 다이오드 Active KR102226985B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-169966 2013-08-19
JP2013169966 2013-08-19
PCT/JP2014/004153 WO2015025499A1 (ja) 2013-08-19 2014-08-08 酸化物半導体基板及びショットキーバリアダイオード

Publications (2)

Publication Number Publication Date
KR20160043967A KR20160043967A (ko) 2016-04-22
KR102226985B1 true KR102226985B1 (ko) 2021-03-11

Family

ID=52483294

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167004121A Active KR102226985B1 (ko) 2013-08-19 2014-08-08 산화물 반도체 기판 및 쇼트키 배리어 다이오드

Country Status (6)

Country Link
US (2) US9691910B2 (enExample)
JP (3) JPWO2015025499A1 (enExample)
KR (1) KR102226985B1 (enExample)
CN (2) CN105453272B (enExample)
TW (1) TWI615984B (enExample)
WO (1) WO2015025499A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6975530B2 (ja) * 2015-12-25 2021-12-01 出光興産株式会社 半導体素子及びそれを用いた電気機器
WO2017110940A1 (ja) * 2015-12-25 2017-06-29 出光興産株式会社 半導体素子及びそれを用いた電気機器
KR102531224B1 (ko) * 2015-12-25 2023-05-10 이데미쓰 고산 가부시키가이샤 적층체
KR102382656B1 (ko) * 2015-12-25 2022-04-04 이데미쓰 고산 가부시키가이샤 적층체
CN107039439B (zh) 2016-02-04 2020-03-10 中芯国际集成电路制造(上海)有限公司 存储器及其形成方法
JP6770331B2 (ja) * 2016-05-02 2020-10-14 ローム株式会社 電子部品およびその製造方法
US20180097073A1 (en) * 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
CN109863607A (zh) 2016-10-11 2019-06-07 出光兴产株式会社 结构物、该结构物的制造方法、半导体元件以及电子电路
JP2018137394A (ja) * 2017-02-23 2018-08-30 トヨタ自動車株式会社 半導体装置の製造方法
US11450774B2 (en) * 2017-07-08 2022-09-20 Flosfia Inc. Semiconductor device including two or more adjustment regions
JP6977465B2 (ja) * 2017-10-06 2021-12-08 株式会社デンソー 半導体装置の製造方法
GB2569196B (en) 2017-12-11 2022-04-20 Pragmatic Printing Ltd Schottky diode
US11917919B2 (en) * 2019-12-13 2024-02-27 Denso Corporation Electret
JP7638125B2 (ja) 2021-03-25 2025-03-03 エヌ・ティ・ティ・コミュニケーションズ株式会社 医療システム及びコンピュータープログラム
CN117954504A (zh) * 2022-10-19 2024-04-30 广州华瑞升阳投资有限公司 一种肖特基势垒二极管

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021689A (ja) * 2006-07-11 2008-01-31 Fuji Electric Device Technology Co Ltd 半導体装置
WO2008096768A1 (ja) * 2007-02-09 2008-08-14 Idemitsu Kosan Co., Ltd. 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ基板及び画像表示装置と、画像表示装置と、半導体デバイス
JP2009194225A (ja) 2008-02-15 2009-08-27 Sumitomo Electric Ind Ltd ショットキバリアダイオード、及びショットキバリアダイオードを作製する方法
JP2010182852A (ja) * 2009-02-05 2010-08-19 Konica Minolta Holdings Inc 金属酸化物半導体、その製造方法及び薄膜トランジスタ
JP2010263195A (ja) 2009-04-10 2010-11-18 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2012138552A (ja) 2010-12-28 2012-07-19 Taiyo Yuden Co Ltd ショットキーダイオードおよびその製造方法
JP2013102189A (ja) 2009-11-28 2013-05-23 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358782A (en) * 1980-01-17 1982-11-09 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor device
US4782302A (en) * 1986-10-31 1988-11-01 The United States Of America As Represented By The United States Department Of Energy Detector and energy analyzer for energetic-hydrogen in beams and plasmas
JP2702279B2 (ja) * 1990-11-30 1998-01-21 新コスモス電機株式会社 ガス検知素子
JPH0536975A (ja) 1991-03-07 1993-02-12 Sumitomo Metal Ind Ltd シヨツトキーバリアダイオード素子
JPH04302173A (ja) * 1991-03-29 1992-10-26 Japan Synthetic Rubber Co Ltd 薄膜ダイオード
JPH0897441A (ja) 1994-09-26 1996-04-12 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
US20020179957A1 (en) * 2001-05-29 2002-12-05 Motorola, Inc. Structure and method for fabricating high Q varactor diodes
JP2004022878A (ja) 2002-06-18 2004-01-22 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2005072367A (ja) * 2003-08-26 2005-03-17 Nippon Oil Corp 光電変換素子
JP5053537B2 (ja) * 2004-11-10 2012-10-17 キヤノン株式会社 非晶質酸化物を利用した半導体デバイス
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
EP2453480A2 (en) * 2004-11-10 2012-05-16 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US20090090914A1 (en) * 2005-11-18 2009-04-09 Koki Yano Semiconductor thin film, method for producing the same, and thin film transistor
KR100723420B1 (ko) * 2006-02-20 2007-05-30 삼성전자주식회사 비정질 합금 산화층을 포함하는 비휘발성 메모리 소자
JP2007243080A (ja) * 2006-03-13 2007-09-20 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
US7389675B1 (en) * 2006-05-12 2008-06-24 The United States Of America As Represented By The National Aeronautics And Space Administration Miniaturized metal (metal alloy)/ PdOx/SiC hydrogen and hydrocarbon gas sensors
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP5261923B2 (ja) * 2006-10-17 2013-08-14 サンケン電気株式会社 化合物半導体素子
JP4362635B2 (ja) * 2007-02-02 2009-11-11 ローム株式会社 ＺｎＯ系半導体素子
WO2008136505A1 (ja) 2007-05-08 2008-11-13 Idemitsu Kosan Co., Ltd. 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法
JPWO2009034953A1 (ja) * 2007-09-10 2010-12-24 出光興産株式会社 薄膜トランジスタ
JP2009164237A (ja) 2007-12-28 2009-07-23 Panasonic Corp ショットキーバリアダイオード
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
JP5382763B2 (ja) 2008-04-09 2014-01-08 独立行政法人産業技術総合研究所 半導体素子及びその製造方法と、該半導体素子を備えた電子デバイス
JP5198146B2 (ja) * 2008-05-22 2013-05-15 株式会社東芝 不揮発性記憶装置
JP2010040552A (ja) * 2008-07-31 2010-02-18 Idemitsu Kosan Co Ltd 薄膜トランジスタ及びその製造方法
JP4803241B2 (ja) * 2008-11-27 2011-10-26 三菱電機株式会社 半導体モジュール
JP5606682B2 (ja) * 2009-01-29 2014-10-15 富士フイルム株式会社 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法
US8461582B2 (en) * 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5453867B2 (ja) * 2009-03-24 2014-03-26 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法
WO2010147073A1 (ja) 2009-06-15 2010-12-23 株式会社村田製作所 抵抗スイッチング・メモリー素子
JP2011029238A (ja) * 2009-07-21 2011-02-10 Fujifilm Corp 結晶性ホモロガス化合物層を含む積層体の製造方法及び電界効果型トランジスタ
WO2011052437A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
CN104992962B (zh) * 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011099336A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101636998B1 (ko) * 2010-02-12 2016-07-08 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
JP5780902B2 (ja) * 2010-10-12 2015-09-16 出光興産株式会社 半導体薄膜、薄膜トランジスタ及びその製造方法
US20130320326A1 (en) * 2011-02-18 2013-12-05 Idemitsu Kosan Co., Ltd. Insulating material forming composition for electronic devices, insulating material for electronic devices, electronic devices and thin film transistor
JP5800291B2 (ja) * 2011-04-13 2015-10-28 ローム株式会社 ＺｎＯ系半導体素子およびその製造方法
US8546879B2 (en) 2011-08-18 2013-10-01 Monolithic Power Systems, Inc. High density lateral DMOS with recessed source contact
JP5894393B2 (ja) * 2011-08-19 2016-03-30 出光興産株式会社 酸化物粒子分散液
JP5866727B2 (ja) * 2011-09-08 2016-02-17 株式会社タムラ製作所 β−Ｇａ２Ｏ３単結晶膜の製造方法及び結晶積層構造体
US8902082B2 (en) 2011-10-11 2014-12-02 Bruce B. Roesner Communicating statuses of vehicles
CN102332474A (zh) * 2011-10-18 2012-01-25 北京工业大学 一种铟镓锌氧化物肖特基二极管器件及其制备方法
JP2013102081A (ja) * 2011-11-09 2013-05-23 Tamura Seisakusho Co Ltd ショットキーバリアダイオード
JP5984505B2 (ja) * 2012-05-22 2016-09-06 株式会社日立製作所 半導体ガスセンサおよびその製造方法
CN103426910B (zh) * 2012-05-24 2016-01-20 杰力科技股份有限公司 功率半导体元件及其边缘终端结构
US8952470B2 (en) * 2012-09-10 2015-02-10 James John Lupino Low cost high density nonvolatile memory array device employing thin film transistors and back to back Schottky diodes
JP5777586B2 (ja) * 2012-09-20 2015-09-09 株式会社東芝 半導体装置及びその製造方法
JP6071569B2 (ja) * 2013-01-17 2017-02-01 キヤノン株式会社 有機発光素子
JP6222931B2 (ja) * 2013-01-21 2017-11-01 キヤノン株式会社 有機発光素子
JP6581765B2 (ja) * 2013-10-02 2019-09-25 株式会社半導体エネルギー研究所 ブートストラップ回路、およびブートストラップ回路を有する半導体装置
US9300292B2 (en) * 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
JP6541360B2 (ja) * 2014-02-07 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
US9842842B2 (en) * 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
JP6587497B2 (ja) * 2014-10-31 2019-10-09 株式会社半導体エネルギー研究所 半導体装置
TWI662792B (zh) * 2015-01-29 2019-06-11 日商半導體能源研究所股份有限公司 半導體裝置、電子組件及電子裝置
WO2016128853A1 (en) * 2015-02-09 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9489988B2 (en) * 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021689A (ja) * 2006-07-11 2008-01-31 Fuji Electric Device Technology Co Ltd 半導体装置
WO2008096768A1 (ja) * 2007-02-09 2008-08-14 Idemitsu Kosan Co., Ltd. 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ基板及び画像表示装置と、画像表示装置と、半導体デバイス
JP2009194225A (ja) 2008-02-15 2009-08-27 Sumitomo Electric Ind Ltd ショットキバリアダイオード、及びショットキバリアダイオードを作製する方法
JP2010182852A (ja) * 2009-02-05 2010-08-19 Konica Minolta Holdings Inc 金属酸化物半導体、その製造方法及び薄膜トランジスタ
JP2010263195A (ja) 2009-04-10 2010-11-18 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2013102189A (ja) 2009-11-28 2013-05-23 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2012138552A (ja) 2010-12-28 2012-07-19 Taiyo Yuden Co Ltd ショットキーダイオードおよびその製造方法

Also Published As

Publication number Publication date
US9691910B2 (en) 2017-06-27
CN105453272B (zh) 2020-08-21
CN105453272A (zh) 2016-03-30
JP6989545B2 (ja) 2022-01-05
TW201515242A (zh) 2015-04-16
WO2015025499A1 (ja) 2015-02-26
US11769840B2 (en) 2023-09-26
US20160197202A1 (en) 2016-07-07
TWI615984B (zh) 2018-02-21
JPWO2015025499A1 (ja) 2017-03-02
JP2019080084A (ja) 2019-05-23
JP2021052203A (ja) 2021-04-01
KR20160043967A (ko) 2016-04-22
CN111668315B (zh) 2023-09-12
US20170263786A1 (en) 2017-09-14
CN111668315A (zh) 2020-09-15
JP7084465B2 (ja) 2022-06-14

Similar Documents

Publication Publication Date Title
JP7084465B2 (ja) 酸化物半導体基板及びショットキーバリアダイオード
KR102267094B1 (ko) 산화물 반도체 기판 및 쇼트키 배리어 다이오드
TWI731844B (zh) 積層體
KR102413244B1 (ko) 구조물, 그 제조 방법, 반도체 소자 및 전자 회로
KR101803553B1 (ko) 반도체 장치 및 그 제작 방법
JP2021141337A (ja) 積層体
CN108369964A (zh) 层叠体
TWI728165B (zh) 三族氮化物高速電子遷移率場效應電晶體元件

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20160217

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190726

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200727

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20210126

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210308

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210308

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240220

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20250204

Start annual number: 5

End annual number: 5